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Scanning Tunneling Microscopy Studies Of Growth Of Silicon And Germanium On Silicon100
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Book Synopsis Scanning Tunneling Microscopy Studies of Growth of Silicon and Germanium on Silicon(100) by : Fang Wu
Download or read book Scanning Tunneling Microscopy Studies of Growth of Silicon and Germanium on Silicon(100) written by Fang Wu and published by . This book was released on 1996 with total page 540 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scanning Tunneling Microscopy of Silicon(100) 2 X 1 by : Jerome S. Hubacek
Download or read book Scanning Tunneling Microscopy of Silicon(100) 2 X 1 written by Jerome S. Hubacek and published by . This book was released on 1992 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The Si(100) 2 x 1 surface, a technologically important surface in microelectronics and silicon molecular beam epitaxy (MBE), has been studied with the scanning tunneling microscope (STM) to attempt to clear up the controversy that surrounds previous studies of this surface. To this end, an ultra-high vacuum (UHV) STM/surface science system has been designed and constructed to study semiconductor surfaces. Clean Si(100) 2 x 1 surfaces have been prepared and imaged with the STM. Atomic resolution images probing both the filled states and empty states indicate that the surface consists of statically buckled dimer rows. With electronic device dimensions shrinking to smaller and smaller sizes, the Si-SiO$sb2$ interface is becoming increasingly important and, although it is the most popular interface used in the microelectronics industry, little is known about the initial stages of oxidation of the Si(100) surface. Scanning tunneling microscopy has been employed to examine Si(100) 2 x 1 surfaces exposed to molecular oxygen in UHV. Ordered rows of bright and dark spots, rotated 45$spcirc$ from the silicon dimer rows, appear in the STM images, suggesting that the Si(100)-SiO$sb2$ interface may be explained with a $beta$-cristobalite(100) structure rotated by 45$spcirc$ on the Si(100) surface.
Book Synopsis Hot Scanning Tunneling Microscopy by : Christopher Andrew Pearson
Download or read book Hot Scanning Tunneling Microscopy written by Christopher Andrew Pearson and published by . This book was released on 1995 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scanning Tunneling Microscopy of the Oxygenation Reaction on the Silicon (100) Surface by : Barbara Golen
Download or read book Scanning Tunneling Microscopy of the Oxygenation Reaction on the Silicon (100) Surface written by Barbara Golen and published by . This book was released on 1992 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Scanning Tunneling Microscopy written by and published by Academic Press. This book was released on 1993-03-25 with total page 481 pages. Available in PDF, EPUB and Kindle. Book excerpt: Scanning tunneling microscopy (STM) and its extensions have become revolutionary tools in the fields of physics, materials science, chemistry, and biology. These new microscopies have evolved from their beginnings asresearch aids to their current use as commercial tools in the laboratory and on the factory floor. New wonders continue to unfold as STM delivers atomic scale imaging and electrical characterization of the newly emerging nanometer world. This volume in the METHODS OF EXPERIMENTAL PHYSICS Series describes the basics of scanning tunneling microscopy, provides a fundamental theoretical understanding of the technique and a thorough description of the instrumentation, and examines numerous examples and applications. Written by the pioneers of the field, this volume is an essential handbook for researchers and users of STM, as well as a valuable resource for libraries.
Book Synopsis Scanning Tunneling Microscopy and Computational Chemistry Studies for Controlled Reactions on Silicon by : Dimitri B. Skliar
Download or read book Scanning Tunneling Microscopy and Computational Chemistry Studies for Controlled Reactions on Silicon written by Dimitri B. Skliar and published by ProQuest. This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The understanding of the chemistry of silicon surfaces has been one of the major contributors in development and improvement of silicon based microelectronic devices in the past several decades. Progressively, the dimensions of devices have reduced by several orders of magnitude, presently at the length scale of few tens of nanometers, and are expected to decrease in size even more. For chemistry based film growth methods such as chemical vapor deposition (CVD) or atomic layer deposition (ALD), control of film structure and composition in this spatial regime requires a very detailed nanoscopic understanding of silicon surface chemistry. A combined experimental and theoretical approach, utilizing ultra high vacuum scanning tunneling microscopy (UHV-STM) and density functional theory (DFT), to understanding the surface chemistry of Si(100) is illustrated in the context of ALD development for high dielectric constant metal oxides. As a first possible route to controllably deposit monolayer thick metal layer, the reaction of the metal-organic molecule with bare silicon surface is considered. The interaction of the protonated b-diketonate ligand, 2,2,6,6-tetramethyl-3,5-heptanedione (dpmH), which is a byproduct of the strontium metal-organic precursor vaporization, with Si(100)-2x1 surface is investigated. Two aspects of the molecule's interactions were addressed: the adsorption at room temperature as well as its thermal decomposition. By combination of the experiments with DFT calculations of adsorbate geometry, STM image simulations, and reaction pathways it was possible to propose unique binding configurations that match the experimentally observed adsorption features. Theoretical analysis of multiple competing reaction pathways showed that hydroxyl dissociation via a 1,7 H-shift mechanism is the dominant adsorption pathway. Several other pathways including [2+4] addition, [2+2] C=O intra-dimer addition, [2+2] C=O intra-dimer addition with OH dissociation on an adjacent dimer, [2+2] C=C intra-dimer addition, and "ene" addition are found to be barrierless with respect to the entrance channel, and have small barriers relative to a hypothesized adsorption precursor intermediate. Pathways involving 1,3 and 1,2 intra-molecular H-shifts are found to be highly activated and are expected to be inaccessible at room temperature. Several state inter-conversions are found to be unlikely as well. These results provide insight to the competitive adsorption pathways for multifunctional molecules on silicon. Investigations of thermally induced decomposition of adsorbed dpmH molecules showed that there are no significant products of desorption of carbon containing fragments of the molecule, i.e. most of the carbon atoms incorporate into the silicon surface causing it to reconstruct to a c(4x4) phase at exposures below ~ 0.15 L. At higher exposures formation of SiC islands is observed. These findings demonstrate that schemes to deposit materials from organometallic compounds containing b-diketone ligands onto clean Si(100)-2x1 surface cannot result in an ordered interfacial structure as carbon incorporation into the substrate is inevitable. An alternative strategy for depositing metal template layer is proposed, where the initial reacting surface will be terminated by water at room temperature. The stability of surface hydroxyl groups and mechanisms of their decomposition in 300-600K temperature range are analyzed. It is found that surface oxidation does not follow first order kinetics with respect to the hydroxyl groups. DFT calculations of oxygen insertion pathways point towards a catalytic effect of the dangling bonds and suggest that in the 500-550K range the insertion events should occur predominantly next to unoccupied surface silicon sites. A model is proposed, where diffusing dangling bonds act as moving catalysts for hydroxyl group decomposition. Kinetic Monte Carlo (kMC) simulations are used to compare the results of this model with experimental data. A strategy to increase hydroxyl group stability is demonstrated where the initial concentration of surface dangling bonds is decreased by water termination at 130K.
Book Synopsis Scanning Tunneling Microscopy of Semiconductor Surfaces by :
Download or read book Scanning Tunneling Microscopy of Semiconductor Surfaces written by and published by . This book was released on 1993 with total page 11 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this final report, we discuss our recent results with the structure of metals on semiconductor surfaces. In particular, we focus our study on the use of surfactants for the epitaxial growth of germanium on silicon. A surfactant, such as tellurium, reduces the interfacial energy between the Si and Ge, as well as their surface free energies to change the growth mode to layer by layer, which is necessary to epitaxial growth. In addition to this summary of technical progress, we summarize some of the important events that took place in the Ginzton Lab during the period covered by this grant. These include the introduction of the force microscope and the transfer of this technology to industrial firms in such a way that instrument's based on the designs developed under this grant are now available in commercial form. Finally, we point out that our work on microfabrication of silicon cantilevers can be extended to the construction of parallel arrays where each cantilever is operated independently. Such an array will enable a large increase in speed for the new form of lithography based on patterning silicon with the E-field on the scanning tip. Such patterning can produce lines with widths less than 0.1 micrometer. This range, beyond the limits of optical lithography, is of crucial importance to the future of silicon microcircuits.
Book Synopsis Development of an Ultra High Vacuum Scanning Tunneling Microscope by : Marc Fouchier
Download or read book Development of an Ultra High Vacuum Scanning Tunneling Microscope written by Marc Fouchier and published by . This book was released on 2000 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scanning Tunneling Microscopy Studies of Light-emitting Porous Silicon and Construction of a Special-purpose Tunneling Microscope by : Marian Enachescu
Download or read book Scanning Tunneling Microscopy Studies of Light-emitting Porous Silicon and Construction of a Special-purpose Tunneling Microscope written by Marian Enachescu and published by . This book was released on 1994 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scanning Tunneling Microscopy and Its Application by : Chunli Bai
Download or read book Scanning Tunneling Microscopy and Its Application written by Chunli Bai and published by Springer Science & Business Media. This book was released on 2000-08-10 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents a unified view of the rapidly growing field of scanning tunneling microscopy and its many derivatives. After examining novel scanning-probe techniques and the instrumentation and methods, the book provides detailed accounts of STM applications. It examines limitations of the present-day investigations and provides insight into further trends. "I strongly recommend that Professor Bai's book be a part of any library that serves surface scientists, biochemists, biophysicists, material scientists, and students of any science or engineering field...There is no doubt that this is one of the better (most thoughtful) texts." Journal of the American Chemical Society (Review of 1/e)
Author :Hans-Joachim Güntherodt Publisher :Springer Science & Business Media ISBN 13 :3642973434 Total Pages :252 pages Book Rating :4.6/5 (429 download)
Book Synopsis Scanning Tunneling Microscopy I by : Hans-Joachim Güntherodt
Download or read book Scanning Tunneling Microscopy I written by Hans-Joachim Güntherodt and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 252 pages. Available in PDF, EPUB and Kindle. Book excerpt: Scanning Tunneling Microscopy I provides a unique introduction to a novel and fascinating technique that produces beautiful images of nature on an atomic scale. It is the first of three volumes that together offer a comprehensive treatment of scanning tunneling microscopy, its diverse applications, and its theoretical treatment. In this volume the reader will find a detailed description of the technique itself and of its applications to metals, semiconductors, layered materials, adsorbed molecules and superconductors. In addition to the many representative results reviewed, extensive references to original work will help to make accessible the vast body of knowledge already accumulated in this field.
Book Synopsis Physics At Surfaces And Interfaces, Proceedings Of The International Conference by : Bhupendra N Dev
Download or read book Physics At Surfaces And Interfaces, Proceedings Of The International Conference written by Bhupendra N Dev and published by World Scientific. This book was released on 2003-08-05 with total page 199 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains articles in several areas involving a dominant role of surfaces and interfaces. It is divided into four sections. The first section deals with theoretical and experimental aspects of the structure and morphology of clean surfaces and adsorbed layers on surfaces. The next section concerns growth on surfaces leading to semiconductor devices with quantum well, quantum wire and quantum dot structures; also deals with spin transport in 2DEG. Section 3 is on layered synthetic microstructures (LSMs). Analysis of interface roughness and layer composition of LSMs by X-ray techniques, fabrication of hard X-ray telescopes with LSMs, and diffusion across interfaces of LSMs are discussed here. The last section contains articles dealing with semiconductor surfaces exposed to ion beams and ion-irradiated semiconductor multilayers.
Download or read book Chemical Abstracts written by and published by . This book was released on 1991 with total page 2682 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scanning Tunneling Microscopy of Metal Growth and Reconstruction on Si(100) and Si(111) by : Alison A. Baski
Download or read book Scanning Tunneling Microscopy of Metal Growth and Reconstruction on Si(100) and Si(111) written by Alison A. Baski and published by . This book was released on 1991 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Quantitative Electron Microscopy Studies of Silicon Germanium/silicon(001). by :
Download or read book Quantitative Electron Microscopy Studies of Silicon Germanium/silicon(001). written by and published by . This book was released on 2000 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scanning Transmission Electron Microscopy Studies of Silicon and Epitaxial Growth of Gold and Silver on H-terminated Silicon by : Peirong Xu
Download or read book Scanning Transmission Electron Microscopy Studies of Silicon and Epitaxial Growth of Gold and Silver on H-terminated Silicon written by Peirong Xu and published by . This book was released on 1991 with total page 504 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scanning Tunneling Microscopy Studies of Surface Kinetic Processes at the Atomic Level by : Yuan-Wu Mo
Download or read book Scanning Tunneling Microscopy Studies of Surface Kinetic Processes at the Atomic Level written by Yuan-Wu Mo and published by . This book was released on 1991 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: