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Rf Switch Design For Reconfigurable Power Amplifiers With High Back Off Efficiency In Nm Cmos Technologies
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Book Synopsis RF Switch Design for Reconfigurable Power Amplifiers with High Back-off Efficiency in Nm-CMOS Technologies by : Jochen Rascher
Download or read book RF Switch Design for Reconfigurable Power Amplifiers with High Back-off Efficiency in Nm-CMOS Technologies written by Jochen Rascher and published by . This book was released on 2015 with total page 162 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Reconfigurable RF Power Amplifiers on Silicon for Wireless Handsets by : Laurent Leyssenne
Download or read book Reconfigurable RF Power Amplifiers on Silicon for Wireless Handsets written by Laurent Leyssenne and published by Springer Science & Business Media. This book was released on 2011-01-11 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reconfigurable RF Power Amplifiers on Silicon for Wireless Handsets is intended to designers and researchers who have to tackle the efficiency/linearity trade-off in modern RF transmitters so as to extend their battery lifetime. High data rate 3G/4G standards feature broad channel bandwidths, high dynamic range and critical envelope variations which generally forces the power amplifier (PA) to operate in a low efficiency “backed-off” regime. Classic efficiency enhancement techniques such as Envelope Elimination and Restoration reveal to be little compliant with handset-dedicated PA implementation due to their channel-bandwidth-limited behavior and their increased die area consumption and/or bill-of-material. The architectural advances that are proposed in this book circumvent these issues since they put the stress on low die-area /low power-consumption control circuitry. The advantages of silicon over III/V technologies are highlighted by several analogue signal processing techniques that can be implemented on-chip with a power amplifier. System-level and transistor-level simulations are combined to illustrate the principles of the proposed power adaptive solutions. Measurement on BICMOS demonstrators allows validating the functionality of dynamic linearity/efficiency management. In Reconfigurable RF Power Amplifiers on Silicon for Wireless Handsets, PA designers will find a review of technologies, architectures and theoretical formalisms (Volterra series...) that are traditionally related to PA design. Specific issues that one encounters in power amplifiers (such as thermal / memory effects, stability, VSWR sensitivity...) and the way of overcoming them are also extensively considered throughout this book.
Author :Paulo Augusto Dal Fabbro Publisher :Springer Science & Business Media ISBN 13 :9048193613 Total Pages :171 pages Book Rating :4.0/5 (481 download)
Book Synopsis Linear CMOS RF Power Amplifiers for Wireless Applications by : Paulo Augusto Dal Fabbro
Download or read book Linear CMOS RF Power Amplifiers for Wireless Applications written by Paulo Augusto Dal Fabbro and published by Springer Science & Business Media. This book was released on 2010-06-22 with total page 171 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in electronics have pushed mankind to create devices, ranging from - credible gadgets to medical equipment to spacecraft instruments. More than that, modern society is getting used to—if not dependent on—the comfort, solutions, and astonishing amount of information brought by these devices. One ?eld that has continuously bene?tted from those advances is the radio frequency integrated c- cuit (RFIC) design, which in its turn has promoted countless bene?ts to the mankind as a payback. Wireless communications is one prominent example of what the - vances in electronics have enabled and their consequences to our daily life. How could anyone back in the eighties think of the possibilities opened by the wireless local area networks (WLANs) that can be found today in a host of places, such as public libraries, coffee shops, trains, to name just a few? How can a youngster, who lives this true WLAN experience nowadays, imagine a world without it? This book dealswith the design oflinearCMOS RF PowerAmpli?ers(PAs). The RF PA is a very important part of the RF transceiver, the device that enables wireless communications. Two important aspects that are key to keep the advances in RF PA design at an accelerate pace are treated: ef?ciency enhancement and frequen- tunable capability. For this purpose, the design of two different integrated circuits realizedina0. 11μmtechnologyispresented,eachoneaddressingadifferentaspect. With respect to ef?ciency enhancement, the design of a dynamic supply RF power ampli?er is treated, making up the material of Chaps. 2 to 4.
Book Synopsis RF CMOS Power Amplifiers: Theory, Design and Implementation by : Mona M. Hella
Download or read book RF CMOS Power Amplifiers: Theory, Design and Implementation written by Mona M. Hella and published by Springer Science & Business Media. This book was released on 2005-12-27 with total page 107 pages. Available in PDF, EPUB and Kindle. Book excerpt: RF CMOS Power Amplifiers: Theory Design and Implementation focuses on the design procedure and the testing issues of CMOS RF power amplifiers. This is the first monograph addressing RF CMOS power amplifier design for emerging wireless standards. The focus on power amplifiers for short is distance wireless personal and local area networks (PAN and LAN), however the design techniques are also applicable to emerging wide area networks (WAN) infrastructure using micro or pico cell networks. The book discusses CMOS power amplifier design principles and theory and describes the architectures and tardeoffs in designing linear and nonlinear power amplifiers. It then details design examples of RF CMOS power amplifiers for short distance wireless applications (e, g., Bluetooth, WLAN) including designs for multi-standard platforms. Design aspects of RF circuits in deep submicron CMOS are also discussed. RF CMOS Power Amplifiers: Theory Design and Implementation serves as a reference for RF IC design engineers and RD and R&D managers in industry, and for graduate students conducting research in wireless semiconductor IC design in general and with CMOS technology in particular.
Book Synopsis Modeling and Design Techniques for RF Power Amplifiers by : Arvind Raghavan
Download or read book Modeling and Design Techniques for RF Power Amplifiers written by Arvind Raghavan and published by John Wiley & Sons. This book was released on 2008-02-04 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: Achieve higher levels of performance, integration, compactness, and cost-effectiveness in the design and modeling of radio-frequency (RF) power amplifiers RF power amplifiers are important components of any wireless transmitter, but are often the limiting factors in achieving better performance and lower cost in a wireless communication system—presenting the RF IC design community with many challenges. The next-generation technological advances presented in this book are the result of cutting-edge research in the area of large-signal device modeling and RF power amplifier design at the Georgia Institute of Technology, and have the potential to significantly address issues of performance and cost-effectiveness in this area. Richly complemented with hundreds of figures and equations, Modeling and Design Techniques for RF Power Amplifiers introduces and explores the most important topics related to RF power amplifier design under one concise cover. With a focus on efficiency enhancement techniques and the latest advances in the field, coverage includes: Device modeling for CAD Empirical modeling of bipolar devices Scalable modeling of RF MOSFETs Power amplifier IC design Power amplifier design in silicon Efficiency enhancement of RF power amplifiers The description of state-of-the-art techniques makes this book a valuable and handy reference for practicing engineers and researchers, while the breadth of coverage makes it an ideal text for graduate- and advanced undergraduate-level courses in the area of RF power amplifier design and modeling.
Book Synopsis Switchmode RF and Microwave Power Amplifiers by : Andrei Grebennikov
Download or read book Switchmode RF and Microwave Power Amplifiers written by Andrei Grebennikov and published by Academic Press. This book was released on 2021-03-19 with total page 840 pages. Available in PDF, EPUB and Kindle. Book excerpt: Switchmode RF and Microwave Power Amplifiers, Third Edition is an essential reference book on developing RF and microwave switchmode power amplifiers. The book combines theoretical discussions with practical examples, allowing readers to design high-efficiency RF and microwave power amplifiers on different types of bipolar and field-effect transistors, design any type of high-efficiency switchmode power amplifiers operating in Class D or E at lower frequencies and in Class E or F and their subclasses at microwave frequencies with specified output power, also providing techniques on how to design multiband and broadband Doherty amplifiers using different bandwidth extension techniques and implementation technologies. This book provides the necessary information to understand the theory and practical implementation of load-network design techniques based on lumped and transmission-line elements. It brings a unique focus on switchmode RF and microwave power amplifiers that are widely used in cellular/wireless, satellite and radar communication systems which offer major power consumption savings. Provides a complete history of high-efficiency Class E and Class F techniques Presents a new chapter on Class E with shunt capacitance and shunt filter to simplify the design of high-efficiency power amplifier with broader frequency bandwidths Covers different Doherty architectures, including integrated and monolithic implementations, which are and will be, used in modern communication systems to save power consumption and to reduce size and costs Includes extended coverage of multiband and broadband Doherty amplifiers with different frequency ranges and output powers using different bandwidth extension techniques Balances theory with practical implementation, avoiding a cookbook approach and enabling engineers to develop better designs, including hybrid, integrated and monolithic implementations
Book Synopsis Switchmode RF Power Amplifiers by : Andrei Grebennikov
Download or read book Switchmode RF Power Amplifiers written by Andrei Grebennikov and published by Newnes. This book was released on 2011-04-01 with total page 443 pages. Available in PDF, EPUB and Kindle. Book excerpt: A majority of people now have a digital mobile device whether it be a cell phone, laptop, or blackberry. Now that we have the mobility we want it to be more versatile and dependable; RF power amplifiers accomplish just that. These amplifiers take a small input and make it stronger and larger creating a wider area of use with a more robust signal. Switching mode RF amplifiers have been theoretically possible for decades, but were largely impractical because they distort analog signals until they are unrecognizable. However, distortion is not an issue with digital signals—like those used by WLANs and digital cell phones—and switching mode RF amplifiers have become a hot area of RF/wireless design. This book explores both the theory behind switching mode RF amplifiers and design techniques for them. *Provides essential design and implementation techniques for use in cma2000, WiMAX, and other digital mobile standards *Both authors have written several articles on the topic and are well known in the industry *Includes specific design equations to greatly simplify the design of switchmode amplifiers
Book Synopsis Design and Control of RF Power Amplifiers by : Alireza Shirvani
Download or read book Design and Control of RF Power Amplifiers written by Alireza Shirvani and published by Springer Science & Business Media. This book was released on 2013-04-18 with total page 157 pages. Available in PDF, EPUB and Kindle. Book excerpt: Design and Control of RF Power Amplifiers investigates various architectures and concepts for the design and control of radio-frequency (RF) power amplifiers. This book covers merits and challenges of integrating RF power amplifiers in various technologies, and introduces a number of RF power amplifier performance metrics. It provides a thorough review of various power amplifier topologies, followed by a description of approaches and architectures for the control and linearization of these amplifiers. A novel parallel amplifier architecture introduced in this book offers a breakthrough solution to enhancing efficiency in systems using power control. Design and Control of RF Power Amplifiers is a valuable resource for designers, researchers and students in the field of RF integrated circuit design. Detailed and thorough coverage of various concepts in RF power amplifier design makes this book an invaluable guide for both beginners and professionals.
Book Synopsis Advanced Techniques in RF Power Amplifier Design by : Steve C. Cripps
Download or read book Advanced Techniques in RF Power Amplifier Design written by Steve C. Cripps and published by Artech House. This book was released on 2002 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: This much-anticipated volume builds on the author's best selling and classic work, RF Power Amplifiers for Wireless Communications (Artech House, 1999), offering experienced engineers a more in-depth understanding of the theory and design of RF power amplifiers. An invaluable reference tool for RF, digital and system level designers, the book includes discussions on the most critical topics for professionals in the field, including envelope power management schemes and linearization.
Book Synopsis Advanced Design Techniques for RF Power Amplifiers by : Anna N. Rudiakova
Download or read book Advanced Design Techniques for RF Power Amplifiers written by Anna N. Rudiakova and published by Springer Science & Business Media. This book was released on 2006-09-09 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced Design Techniques for RF Power Amplifiers provides a deep analysis of theoretical aspects, modelling, and design strategies of RF high-efficiency power amplifiers. The book can be used as a guide by scientists and engineers dealing with the subject and as a text book for graduate and postgraduate students. Although primarily intended for skilled readers, it provides an excellent quick start for beginners.
Book Synopsis Partitioning Design Approach for the Reliable Design of Highly Efficient RF Power Amplifiers by : Roshanak Lehna
Download or read book Partitioning Design Approach for the Reliable Design of Highly Efficient RF Power Amplifiers written by Roshanak Lehna and published by kassel university press GmbH. This book was released on 2017-11-13 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt: The modern wireless communication systems require modulated signals with wide modulation bandwidth. This, in turns, requires signals with very high dynamic range and peak-to-average power ratio (PAPR). This means that the amplifier in the base-station has to work at a power back-off as large as the dynamic range of the signal, so that the amplifier has a high linearity in this region. For the standard single-stage amplifiers, this large power back-off reduces the efficiency dramatically. In this work, a three-way Doherty power amplifier (DPA) aiming at high power efficiency within a dynamic range of 9.5 dB, is designed and fabricated using partitioning design approach. The partitioning design approach decomposes a complex design task into small-sized, well-controllable, and verifiable subcircuits. This advanced straight forward method has shown very promising results. Using this design approach, a three-way DPA has been designed to demonstrate the advantages of this reliable design technique as well. Based on the design of a single-stage power amplifier and proposing a novel output power combiner, a 6 W three-way DPA has been designed which allows the mandatory load modulation principle in three-way DPA structures to be realized with simpler elements, whereas the design of a standard Doherty combiner would have been very challenging and not practical due to the extremely small value of its characteristic line impedance. The proposed combiner is calculated for a three-way DPA with 2-mm AlGaN/GaN-HEMTs. The simulation result shows a very good load modulation for the amplifier, which confirms the theoretical expectation for a three-way DPA. The efficiency of the designed 6 W three-way DPA at large back-off shows very promising values compared to recently reported amplifiers. The measured IMD3 products confirm the good linearity of the amplifier as well. Accordingly, the proposed power combiner and the design strategy are recommended to be used as the preferred option for designing three-way DPA structures with very high output power.
Book Synopsis RF and Microwave Power Amplifier Design, Second Edition by : Andrei Grebennikov
Download or read book RF and Microwave Power Amplifier Design, Second Edition written by Andrei Grebennikov and published by McGraw Hill Professional. This book was released on 2015-02-09 with total page 667 pages. Available in PDF, EPUB and Kindle. Book excerpt: The latest power amp design methods Fully updated to address cutting-edge technologies, the new edition of this practical guide provides comprehensive, state-of-the-art coverage of RF and microwave power amplifier design. The book describes both existing and new schematic configurations, theoretical approaches, circuit simulation results, and implementation techniques. New chapters discuss linearization and efficiency enhancement and high-efficiency Doherty power amplifiers. Featuring a systematic approach, this comprehensive resource bridges the theory and practice of RF and microwave engineering. RF and Microwave Power Amplifier Design, Second Edition, covers: Two-port network parameters and passive elements Nonlinear circuit design methods Nonlinear active device modeling Impedance matching Power transformers, combiners, and couplers Power amplifier design fundamentals High-efficiency power amplifier design Broadband power amplifiers Linearization and efficiency enhancement techniques High-efficiency Doherty power amplifiers
Book Synopsis Design and Analysis of RF-CMOS Switch for Reconfigurable RF Front End by : Iksannurazmi Bambang Soeroso
Download or read book Design and Analysis of RF-CMOS Switch for Reconfigurable RF Front End written by Iksannurazmi Bambang Soeroso and published by . This book was released on 2014 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt: The consumer demands on having multi-functional wireless communication devices have driven current mobile handset to be more complex than it has ever been before. Of interest, radio frequency (RF) front end has evolved to adapt to multi-standards terminals. Therefore, having an RF-CMOS switch that suits this purpose can be considered unprecedented. This work presents the design and analysis of RF-CMOS switch for reconfigurable RF front end. The RF-CMOS switch is based on two typical designs of transmit-receive (T/R) switch mainly single pole single throw (SPST) and single pole double throw (SPDT) topologies. These designs are analyzed based on key figures of merit of T/R switches, namely insertion loss, isolation and power handling capability. In order to determine the switches performance, the simulation for each key figure of merit is done for two specific designs, namely design A and design B. These designs are varied in terms of their transistor widths. The simulation is done using Cadence Virtuoso software tool and utilizing standard 0.35μm CMOS technology. The SPST RF-CMOS switch exhibits insertion loss of 1.155dB while the SPDT RF-CMOS switch exhibits insertion loss of 1.153dB at 2GHz. On the other hand, the isolation for both RF-CMOS switch designs is kept high (>20dB). Nonetheless, the RF-CMOS switch exhibits power handling capability measured by power 1dB compression point (P1dB) of (>20dBm) and third order intercept point (IIP3) of (>26dBm). On top of that, a DC bias condition needed to operate the switch is discussed to determine an optimal bias condition for each RF-CMOS switch design. This work also presents the capability of integrating the RF-CMOS switch with SAW resonator through simulation. Indeed, this simulation demonstrates the application of RF-CMOS switch for reconfigurable RF front end.
Book Synopsis Linear and Switch-Mode RF Power Amplifiers by : Abdullah Eroglu
Download or read book Linear and Switch-Mode RF Power Amplifiers written by Abdullah Eroglu and published by CRC Press. This book was released on 2017-09-06 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt: RF power amplifiers are implemented in communication, semiconductor wafer processing, magnetic resonance imaging (MRI), and radar systems to produce RF signal with the desired characteristics to perform several critical tasks in the entire system. They can be designed to operate in linear or switch-mode, depending on the specific application. This book explores the design and implementation methods for both linear and switch-mode amplifiers with real world engineering problems. The text discusses phased controlled switch-mode amplifiers and distortion and modulation effects in RF amplifiers. It illustrates the interface and integration of components and sub-systems for RF amplifiers. The material is further reinforced with MATLAB design files.
Book Synopsis Introduction to RF Power Amplifier Design and Simulation by : Abdullah Eroglu
Download or read book Introduction to RF Power Amplifier Design and Simulation written by Abdullah Eroglu and published by CRC Press. This book was released on 2018-09-03 with total page 289 pages. Available in PDF, EPUB and Kindle. Book excerpt: Introduction to RF Power Amplifier Design and Simulation fills a gap in the existing literature by providing step-by-step guidance for the design of radio frequency (RF) power amplifiers, from analytical formulation to simulation, implementation, and measurement. Featuring numerous illustrations and examples of real-world engineering applications, this book: Gives an overview of intermodulation and elaborates on the difference between linear and nonlinear amplifiers Describes the high-frequency model and transient characteristics of metal–oxide–semiconductor field-effect transistors Details active device modeling techniques for transistors and parasitic extraction methods for active devices Explores network and scattering parameters, resonators, matching networks, and tools such as the Smith chart Covers power-sensing devices including four-port directional couplers and new types of reflectometers Presents RF filter designs for power amplifiers as well as application examples of special filter types Demonstrates the use of computer-aided design (CAD) tools, implementing systematic design techniques Blending theory with practice, Introduction to RF Power Amplifier Design and Simulation supplies engineers, researchers, and RF/microwave engineering students with a valuable resource for the creation of efficient, better-performing, low-profile, high-power RF amplifiers.
Book Synopsis Design of Linear RF Outphasing Power Amplifiers by : Xuejun Zhang
Download or read book Design of Linear RF Outphasing Power Amplifiers written by Xuejun Zhang and published by Artech House. This book was released on 2003 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt: Describes the outphasing approach to amplifier linearization that uses power-combining techniques to create a linear output waveform from two nonlinear input sources, and presents recent advances in resolving the limitations caused by the strict matching requirements between the two amplifiers and the microwave power wasted in the power-combing network. The authors discuss the linearity performance of outphasing amplifier systems, correction schemes based on training vectors, and power recycling in outphasing amplifiers. Zhang is an engineer with Qualcomm, while Larson and Asbeck are affiliated with the University of California, San Diego. Annotation (c)2003 Book News, Inc., Portland, OR (booknews.com).
Book Synopsis Efficiency Enhancement Techniques for RF and Millimeter Wave Power Amplifiers by : Olumuyiwa Temitope Ogunnika
Download or read book Efficiency Enhancement Techniques for RF and Millimeter Wave Power Amplifiers written by Olumuyiwa Temitope Ogunnika and published by . This book was released on 2012 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power amplifiers are the circuit blocks in wireless transceivers that require the largest power budget because of their relatively low efficiencies. RF designers cannot depend solely on the development better semiconductor devices in advanced deeply scaled process technologies to obtain improved power amplifier performance. The development of new and better circuits, architectures and design methodologies to maximally exploit the available semiconductor devices is very important as well. This thesis investigates a number of techniques that can be used to improve the efficiency of power amplifiers and break the power-frequency tradeoff in power amplifier design. The first technique emphasizes the use of a class E tuned output network as an efficiency enhancement tool for power amplifiers regardless of their bias conditions. A Class E tuned CMOS power amplifier (PA) operating in the 60 GHz band was designed. Design, layout, and parasitic modeling considerations to attain high-efficiency millimeter-wave PA operation are discussed. Both single-ended and differential versions of the single-stage PA were implemented in a 32 nm SOI CMOS process. Peak power added efficiency of 27% (30%), power gain of 8.8 dB (10 dB), and saturated output power > 9 dBm (12.5 dBm) were measured at 60 GHz from the single-ended (differential) PA with 0.9 V supply. The second technique investigated the efficacy of resistance compression networks in an energy recycling network operating at multi-gigahertz frequencies. The resistance compression network reduces the variation in resonant rectifier input impedance seen at the isolation port of an isolating power combiner. The system was operated at 2.14 GHz and was built around Schottky barrier diodes custom fabricated in a 0.13 [mu]m CMOS process. It is the first experimental demonstration that resistance compression networks can be used for energy recycling in multi-gigahertz applications.
