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Recombination And Metastability In Amorphous Silicon And Silicon Germanium Alloys
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Book Synopsis Recombination and Metastability in Amorphous Silicon and Silicon Germanium Alloys by :
Download or read book Recombination and Metastability in Amorphous Silicon and Silicon Germanium Alloys written by and published by . This book was released on 1992 with total page 14 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report describes the first year of a continuing research study to understand how recombination, trapping, and band-mobility modification affecting the electronic properties of amorphous semiconductors can be measured, characterized, and described by an appropriate spectrum of defect states, and how light-induced defects in a-Si:H and native defects in a-SiGe:H affect transport properties in these materials. The objective was to determine how the Staebler-Wronski defects affect the electronic processes in a-Si:H and a-SiGe:H films. To do this, electroluminescence (EL) and forward bias current in p-i-n devices (i-layer thickness> 2?m) were studied both experimentally and theoretically before and after light soaking. A simple picture was developed to compare forward bias current to the EL signal. The result was unexpected: the product of the final current times the rise time was not constant before and after light soaking as expected from the concept of gain band width, but instead changed radically. The rise time tx increased by more than one order of magnitude while the final current I{sub f} did not change significantly with light soaking. On the other hand the I{sub f}tx product did hold close to a constant when only the applied voltage changed.
Book Synopsis Recombination and Metastability in Amorphous Silicon and Silicon Germanium Alloys. Annual Subcontract Report, 1 February 1992--31 January 1993 by :
Download or read book Recombination and Metastability in Amorphous Silicon and Silicon Germanium Alloys. Annual Subcontract Report, 1 February 1992--31 January 1993 written by and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This report describes work during the second year of a continuing research study. The work is designed to help us understand how recombination, trapping, and band-mobility modification affecting the electronic properties of amorphous semiconductors can be measured, characterized, and described by an appropriate spectrum of defect states. We also worked to determine how light-induced defects in a Si:H and native defects in a-Si:H and native defects in a-Si:H and native defects in a SiGe:H affect transport properties in these materials. During this second year, we continued our experiments on electroluminescence (EL) and transient forward bias current, as well as photocurrent before and after light soaking. We started a program to study thin (0.4[mu]m) p-i-n solar cells, and we studied the effect of optical bias on charge transport in a Si:H films. We performed analytical calculations on a model that predicts an exponential energy region for band tails from dilute random charges. We developed a model for the carrier-recombination-lifetime distribution. We solved the equations for H-diffusion including deep trap levels. Lastly, we analyzed simulation data under forward bias in p-i-n devices. The most interesting and important results were obtained on the EL spectra in thin solar cell devices. We found that, at elevated temperatures, thin p-i-n devices displayed primarily defect luminescence (0.8-0.9 eV), while in thick (> 2 [mu]m) devices the luminescence observed was the main band (l.l-1.2 eV). We also found that, in thin cells with buffered layers, p-b-i-n's the main band luminescence was more pronounced than that in simple p-i-n's. For the first time we have distinguished between bulk and junction- controlled recombination.
Book Synopsis Recombination and Metastability in Amorphous Silicon and Silicon Germanium Alloys. Annual Subcontract Report, 1 February 1991--31 January 1992 by :
Download or read book Recombination and Metastability in Amorphous Silicon and Silicon Germanium Alloys. Annual Subcontract Report, 1 February 1991--31 January 1992 written by and published by . This book was released on 1992 with total page 14 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Recombination and Metastability in Amorphous Silicon and Silicon-germanium Alloys. Final Subcontract Report, 1 February 1991--31 January 1994 by :
Download or read book Recombination and Metastability in Amorphous Silicon and Silicon-germanium Alloys. Final Subcontract Report, 1 February 1991--31 January 1994 written by and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Electroluminescence-spectra- and transient-current measurements were taken before and after light-soaking a-Si:H p-i-n structures. For the first time, we were able to distinguish between bulk- and junction-controlled recombination. We found that in buffered p-b-i-n structures, the main-band luminescence was more pronounced than that in simple p-i-n structures. The enhancement of the main-band luminescence relates with an increase of the open-circuit voltage. This is evidence that the recombination takes place near the p-i interface, and the quality of the p-i interface is very important in solar cell performance. We also found that for thick p-i-n cells ([ge]2 [mu]m), the luminescence contains more high-energy photons (1.1--1.2 eV) than does that for thin cells. Furthermore, the high-energy recombination is more efficient in creating metastable defects than is the low-energy recombination. Consequently, the thinner the i-layer, the less the light-induced effects. The results of repetition rate and reverse bias effects on forward-bias current imply that the junctions recover faster than the bulk when subjected to excess carriers caused by the bias. By including the coulomb interaction, we made progress on a microscopic model for radiative recombination.
Book Synopsis Recombination and Metastability in Amorphous Silicon and Silicon Germanium Alloys by : Marvin Silver
Download or read book Recombination and Metastability in Amorphous Silicon and Silicon Germanium Alloys written by Marvin Silver and published by . This book was released on 1993 with total page 15 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Recombination and Metastability in Amorphous Silicon and Silicon Germanium Alloys by : Marvin Silver
Download or read book Recombination and Metastability in Amorphous Silicon and Silicon Germanium Alloys written by Marvin Silver and published by . This book was released on 1992 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report describes the first year of a continuing research study to understand how recombination, trapping, and band-mobility modification affecting the electronic properties of amorphous semiconductors can be measured, characterized, and described by an appropriate spectrum of defect states, and how light-induced defects in a-Si:H and native defects in a-SiGe:H affect transport properties inthese materials. The objective was to determine how the Staebler-Wronski defects affect the electronic processes in a-Si:H and a-SiGe:H films. To do this, electroluminescence (EL) and forward bias current in p-i-n devices (i-layer thickness > 2 um) were studied both experimentally and theoretically before and after light soaking. A simple picture was developed to compare forward bias current tothe EL signal. The result was unexpected: the product of the final current times the rise time was not constant before and after light soaking as expected from the concept of gain band width, but instead changed radically. The rise time tx increased by more than one order of magnitude while the final current It did not change significantly with light soaking. On the other hand, the IfTx productdid hold close to a constant when only the applied voltage changed.
Book Synopsis Electronic Properties and Metastability of Hydrogenated Amorphous Silicon-germanium Alloys with Low Germanium Content by : Kimon Christoph Palinginis
Download or read book Electronic Properties and Metastability of Hydrogenated Amorphous Silicon-germanium Alloys with Low Germanium Content written by Kimon Christoph Palinginis and published by . This book was released on 2000 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 994 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Light-induced, Metastable Defects in Amorphous Silicon-germanium Alloys by : Nadine Wei Wei Wang
Download or read book Light-induced, Metastable Defects in Amorphous Silicon-germanium Alloys written by Nadine Wei Wei Wang and published by . This book was released on 1993 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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Book Synopsis Silicon, Germanium, and Their Alloys by : Gudrun Kissinger
Download or read book Silicon, Germanium, and Their Alloys written by Gudrun Kissinger and published by CRC Press. This book was released on 2014-12-09 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon-germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevic
Book Synopsis Government Reports Annual Index by :
Download or read book Government Reports Annual Index written by and published by . This book was released on 1993 with total page 1452 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Thin-Film Silicon Solar Cells by : Arvind Victor Shah
Download or read book Thin-Film Silicon Solar Cells written by Arvind Victor Shah and published by CRC Press. This book was released on 2010-08-19 with total page 438 pages. Available in PDF, EPUB and Kindle. Book excerpt: Photovoltaic technology has now developed to the extent that it is close to fulfilling the vision of a "solar-energy world," as devices based on this technology are becoming efficient, low-cost and durable. This book provides a comprehensive treatment of thin-film silicon, a prevalent PV material, in terms of its semiconductor nature, startin
Book Synopsis Government Reports Announcements & Index by :
Download or read book Government Reports Announcements & Index written by and published by . This book was released on 1995 with total page 544 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Bandgap Engineering of Amorphous Silicon-germanium Alloys by : Joao Pedro Conde
Download or read book Bandgap Engineering of Amorphous Silicon-germanium Alloys written by Joao Pedro Conde and published by . This book was released on 1989 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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