Radiation Induced Gain Degradation In Lateral Pnp Bjts With Lightly And Heavily Doped Emitters

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Radiation Effects and Soft Errors in Integrated Circuits and Electronic Devices

Author : Dan M. Fleetwood
Publisher : World Scientific
ISBN 13 : 9789812794703
Total Pages : 354 pages
Book Rating : 4.7/5 (947 download)

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Book Synopsis Radiation Effects and Soft Errors in Integrated Circuits and Electronic Devices by : Dan M. Fleetwood

Download or read book Radiation Effects and Soft Errors in Integrated Circuits and Electronic Devices written by Dan M. Fleetwood and published by World Scientific. This book was released on 2004 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metalOCooxideOCosemiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes the background material necessary for understanding radiation effects at a more general level. Contents: Single Event Effects in Avionics and on the Ground (E Normand); Soft Errors in Commercial Integrated Circuits (R C Baumann); System Level Single Event Upset Mitigation Strategies (W F Heidergott); Space Radiation Effects in Optocouplers (R A Reed et al.); The Effects of Space Radiation Exposure on Power MOSFETs: A Review (K Shenai et al.); Total Dose Effects in Linear Bipolar Integrated Circuits (H J Barnaby); Hardness Assurance for Commercial Microelectronics (R L Pease); Switching Oxide Traps (T R Oldham); Online and Realtime Dosimetry Using Optically Stimulated Luminescence (L Dusseau & J Gasiot); and other articles. Readership: Practitioners, researchers, managers and graduate students in electrical and electronic engineering, semiconductor science and technology, and microelectronics."

Radiation Effects in Advanced Semiconductor Materials and Devices

Author : C. Claeys
Publisher : Springer Science & Business Media
ISBN 13 : 3662049740
Total Pages : 424 pages
Book Rating : 4.6/5 (62 download)

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Book Synopsis Radiation Effects in Advanced Semiconductor Materials and Devices by : C. Claeys

Download or read book Radiation Effects in Advanced Semiconductor Materials and Devices written by C. Claeys and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.

RADECS ...

Author :
Publisher :
ISBN 13 :
Total Pages : 646 pages
Book Rating : 4.:/5 (31 download)

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Book Synopsis RADECS ... by :

Download or read book RADECS ... written by and published by . This book was released on 1999 with total page 646 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Workshop Record, 2000 IEEE Radiation Effects Data Workshop

Author : IEEE Nuclear and Plasma Sciences Society
Publisher : IEEE Computer Society Press
ISBN 13 :
Total Pages : 194 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Workshop Record, 2000 IEEE Radiation Effects Data Workshop by : IEEE Nuclear and Plasma Sciences Society

Download or read book Workshop Record, 2000 IEEE Radiation Effects Data Workshop written by IEEE Nuclear and Plasma Sciences Society and published by IEEE Computer Society Press. This book was released on 2000 with total page 194 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Semiconductor Detector Systems

Author : Helmuth Spieler
Publisher : OUP Oxford
ISBN 13 : 0191523658
Total Pages : 513 pages
Book Rating : 4.1/5 (915 download)

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Book Synopsis Semiconductor Detector Systems by : Helmuth Spieler

Download or read book Semiconductor Detector Systems written by Helmuth Spieler and published by OUP Oxford. This book was released on 2005-08-25 with total page 513 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor sensors patterned at the micron scale combined with custom-designed integrated circuits have revolutionized semiconductor radiation detector systems. Designs covering many square meters with millions of signal channels are now commonplace in high-energy physics and the technology is finding its way into many other fields, ranging from astrophysics to experiments at synchrotron light sources and medical imaging. This book is the first to present a comprehensive discussion of the many facets of highly integrated semiconductor detector systems, covering sensors, signal processing, transistors and circuits, low-noise electronics, and radiation effects. The diversity of design approaches is illustrated in a chapter describing systems in high-energy physics, astronomy, and astrophysics. Finally a chapter "Why things don't work" discusses common pitfalls. Profusely illustrated, this book provides a unique reference in a key area of modern science.

Radiation Tolerant Electronics

Author : Paul Leroux
Publisher : MDPI
ISBN 13 : 3039212796
Total Pages : 210 pages
Book Rating : 4.0/5 (392 download)

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Book Synopsis Radiation Tolerant Electronics by : Paul Leroux

Download or read book Radiation Tolerant Electronics written by Paul Leroux and published by MDPI. This book was released on 2019-08-26 with total page 210 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research on radiation-tolerant electronics has increased rapidly over the past few years, resulting in many interesting approaches to modeling radiation effects and designing radiation-hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation-hardened electronics for space applications, high-energy physics experiments such as those on the Large Hadron Collider at CERN, and many terrestrial nuclear applications including nuclear energy and nuclear safety. With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their susceptibility to ionizing radiation has raised many exciting challenges, which are expected to drive research in the coming decade. In this book we highlight recent breakthroughs in the study of radiation effects in advanced semiconductor devices, as well as in high-performance analog, mixed signal, RF, and digital integrated circuits. We also focus on advances in embedded radiation hardening in both FPGA and microcontroller systems and apply radiation-hardened embedded systems for cryptography and image processing, targeting space applications.

Guidance and Control

Author :
Publisher :
ISBN 13 :
Total Pages : 634 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Guidance and Control by :

Download or read book Guidance and Control written by and published by . This book was released on 2005 with total page 634 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Semiconductor Material and Device Characterization

Author : Dieter K. Schroder
Publisher : John Wiley & Sons
ISBN 13 : 0471739065
Total Pages : 800 pages
Book Rating : 4.4/5 (717 download)

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Book Synopsis Semiconductor Material and Device Characterization by : Dieter K. Schroder

Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.

Ionizing Radiation Effects in MOS Oxides

Author : Timothy R. Oldham
Publisher : World Scientific
ISBN 13 : 9789810233266
Total Pages : 192 pages
Book Rating : 4.2/5 (332 download)

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Book Synopsis Ionizing Radiation Effects in MOS Oxides by : Timothy R. Oldham

Download or read book Ionizing Radiation Effects in MOS Oxides written by Timothy R. Oldham and published by World Scientific. This book was released on 1999 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides. The last such guide was Ionizing Radiation Effects in MOS Devices and Circuits, edited by Ma and Dressendorfer and published in 1989. While that book remains an authoritative reference in many areas, there has been a significant amount of more recent work on the nature of the electrically active defects in MOS oxides which are generated by exposure to ionizing radiation. These same defects are also critical in many other areas of oxide reliability research. As a result of this work, the understanding of the basic physical mechanisms has evolved. This book summarizes the new work and integrates it with older work to form a coherent, unified picture. It is aimed primarily at specialists working on radiation effects and oxide reliability.

Current Sources and Voltage References

Author : Linden T. Harrison
Publisher : Elsevier
ISBN 13 : 0080455557
Total Pages : 603 pages
Book Rating : 4.0/5 (84 download)

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Book Synopsis Current Sources and Voltage References by : Linden T. Harrison

Download or read book Current Sources and Voltage References written by Linden T. Harrison and published by Elsevier. This book was released on 2005-08-22 with total page 603 pages. Available in PDF, EPUB and Kindle. Book excerpt: Current Sources and Voltage References provides fixed, well-regulated levels of current or voltage within a circuit. These are two of the most important "building blocks " of analog circuits, and are typically used in creating most analog IC designs. Part 1 shows the reader how current sources are created, how they can be optimized, and how they can be utilized by the OEM circuit designer. The book serves as a "must-have reference for the successful development of precision circuit applications. It shows practical examples using either BJTs, FETs, precision op amps, or even matched CMOS arrays being used to create highly accurate current source designs, ranging from nanoAmps to Amps. In each chapter the most important characteristics of the particular semiconductor type being studied are carefully reviewed. This not only serves as a helpful refresher for experienced engineers, but also as a good foundation for all EE student coursework, and includes device models and relevant equations.Part 2 focuses on semiconductor voltage references, from their design to their various practical enhancements. It ranges from the simple Zener diode to today's most advanced topologies, including Analog Devices' XFET® and Intersil's FGATM (invented while this book was being written). Over 300 applications and circuit diagrams are shown throughout this easy-to-read, practical reference book.* Discusses how to design low-noise, precision current sources using matched transistor pairs.* Explains the design of high power current sources with power MOSFETs* Gives proven techniques to reduce drift and improve accuracy in voltage references.

BiCMOS Technology and Applications

Author : Antonio R. Alvarez
Publisher : Springer Science & Business Media
ISBN 13 : 9780792393849
Total Pages : 430 pages
Book Rating : 4.3/5 (938 download)

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Book Synopsis BiCMOS Technology and Applications by : Antonio R. Alvarez

Download or read book BiCMOS Technology and Applications written by Antonio R. Alvarez and published by Springer Science & Business Media. This book was released on 1993-09-30 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt: BiCMOS Technology and Applications, Second Edition provides a synthesis of available knowledge about the combination of bipolar and MOS transistors in a common integrated circuit - BiCMOS. In this new edition all chapters have been updated and completely new chapters on emerging topics have been added. In addition, BiCMOS Technology and Applications, Second Edition provides the reader with a knowledge of either CMOS or Bipolar technology/design a reference with which they can make educated decisions regarding the viability of BiCMOS in their own application. BiCMOS Technology and Applications, Second Edition is vital reading for practicing integrated circuit engineers as well as technical managers trying to evaluate business issues related to BiCMOS. As a textbook, this book is also appropriate at the graduate level for a special topics course in BiCMOS. A general knowledge in device physics, processing and circuit design is assumed. Given the division of the book, it lends itself well to a two-part course; one on technology and one on design. This will provide advanced students with a good understanding of tradeoffs between bipolar and MOS devices and circuits.

Fundamentals of Modern VLSI Devices

Author : Yuan Taur
Publisher : Cambridge University Press
ISBN 13 : 9781107635715
Total Pages : 0 pages
Book Rating : 4.6/5 (357 download)

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Book Synopsis Fundamentals of Modern VLSI Devices by : Yuan Taur

Download or read book Fundamentals of Modern VLSI Devices written by Yuan Taur and published by Cambridge University Press. This book was released on 2013-05-02 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.

Modern Power Devices

Author : B. Jayant Baliga
Publisher : Wiley-Interscience
ISBN 13 :
Total Pages : 504 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Modern Power Devices by : B. Jayant Baliga

Download or read book Modern Power Devices written by B. Jayant Baliga and published by Wiley-Interscience. This book was released on 1987-03-10 with total page 504 pages. Available in PDF, EPUB and Kindle. Book excerpt: Written in a tutorial form, the text supplies in-depth the physics, design, and fabrication technology for power devices. Each chapter includes a discussion of the basic concepts of device operation and their electrical characteristics, a detailed analysis of the device physics, and the technology of fabrication. Extensive analytical solutions are used to enable the reader to obtain an understanding of the physics.

Silicon-germanium Heterojunction Bipolar Transistors

Author : John D. Cressler
Publisher : Artech House
ISBN 13 : 9781580535991
Total Pages : 592 pages
Book Rating : 4.5/5 (359 download)

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Book Synopsis Silicon-germanium Heterojunction Bipolar Transistors by : John D. Cressler

Download or read book Silicon-germanium Heterojunction Bipolar Transistors written by John D. Cressler and published by Artech House. This book was released on 2003 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt: This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT.

Principles of Transistor Circuits

Author : S W Amos
Publisher : Elsevier
ISBN 13 : 1483293904
Total Pages : 401 pages
Book Rating : 4.4/5 (832 download)

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Book Synopsis Principles of Transistor Circuits by : S W Amos

Download or read book Principles of Transistor Circuits written by S W Amos and published by Elsevier. This book was released on 2013-10-22 with total page 401 pages. Available in PDF, EPUB and Kindle. Book excerpt: For over thirty years, Stan Amos has provided students and practitioners with a text they could rely on to keep them at the forefront of transistor circuit design. This seminal work has now been presented in a clear new format and completely updated to include the latest equipment such as laser diodes, Trapatt diodes, optocouplers and GaAs transistors, and the most recent line output stages and switch-mode power supplies.Although integrated circuits have widespread application, the role of discrete transistors is undiminished, both as important building blocks which students must understand and as practical solutions to design problems, especially where appreciable power output or high voltage is required. New circuit techniques covered for the first time in this edition include current-dumping amplifiers, bridge output stages, dielectric resonator oscillators, crowbar protection circuits, thyristor field timebases, low-noise blocks and SHF amplifiers in satellite receivers, video clamps, picture enhancement circuits, motor drive circuits in video recorders and camcorders, and UHF modulators. The plan of the book remains the same: semiconductor physics is introduced, followed by details of the design of transistors, amplifiers, receivers, oscillators and generators. Appendices provide information on transistor manufacture and parameters, and a new appendix on transistor letter symbols has been included.

Science Abstracts

Author :
Publisher :
ISBN 13 :
Total Pages : 980 pages
Book Rating : 4.3/5 (243 download)

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Book Synopsis Science Abstracts by :

Download or read book Science Abstracts written by and published by . This book was released on 1993 with total page 980 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Broadband Circuits for Optical Fiber Communication

Author : Eduard Säckinger
Publisher : John Wiley & Sons
ISBN 13 : 0471726397
Total Pages : 454 pages
Book Rating : 4.4/5 (717 download)

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Book Synopsis Broadband Circuits for Optical Fiber Communication by : Eduard Säckinger

Download or read book Broadband Circuits for Optical Fiber Communication written by Eduard Säckinger and published by John Wiley & Sons. This book was released on 2005-05-27 with total page 454 pages. Available in PDF, EPUB and Kindle. Book excerpt: An expert guide to the new and emerging field of broadband circuits for optical fiber communication This exciting publication makes it easy for readers to enter into and deepen their knowledge of the new and emerging field of broadband circuits for optical fiber communication. The author's selection and organization of material have been developed, tested, and refined from his many industry courses and seminars. Five types of broadband circuits are discussed in detail: * Transimpedance amplifiers * Limiting amplifiers * Automatic gain control (AGC) amplifiers * Lasers drivers * Modulator drivers Essential background on optical fiber, photodetectors, lasers, modulators, and receiver theory is presented to help readers understand the system environment in which these broadband circuits operate. For each circuit type, the main specifications and their impact on system performance are explained and illustrated with numerical values. Next, the circuit concepts are discussed and illustrated with practical implementations. A broad range of circuits in MESFET, HFET, BJT, HBT, BiCMOS, and CMOS technologies is covered. Emphasis is on circuits for digital, continuous-mode transmission in the 2.5 to 40 Gb/s range, typically used in SONET, SDH, and Gigabit Ethernet applications. Burst-mode circuits for passive optical networks (PON) and analog circuits for hybrid fiber-coax (HFC) cable-TV applications also are discussed. Learning aids are provided throughout the text to help readers grasp and apply difficult concepts and techniques, including: * Chapter summaries that highlight the key points * Problem-and-answer sections to help readers apply their new knowledge * Research directions that point to exciting new technological breakthroughs on the horizon * Product examples that show the performance of actual broadband circuits * Appendices that cover eye diagrams, differential circuits, S parameters, transistors, and technologies * A bibliography that leads readers to more complete and in-depth treatment of specialized topics This is a superior learning tool for upper-level undergraduates and graduate-level students in circuit design and optical fiber communication. Unlike other texts that concentrate on analog circuits in general or mostly on optics, this text provides balanced coverage of electronic, optic, and system issues. Professionals in the fiber optic industry will find it an excellent reference, incorporating the latest technology and discoveries in the industry.