Quantum Capacitance In Quantized Transistors

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Quantum Capacitance In Quantized Transistors

Author : Kamakhya Prasad Ghatak
Publisher : World Scientific
ISBN 13 : 9811279411
Total Pages : 886 pages
Book Rating : 4.8/5 (112 download)

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Book Synopsis Quantum Capacitance In Quantized Transistors by : Kamakhya Prasad Ghatak

Download or read book Quantum Capacitance In Quantized Transistors written by Kamakhya Prasad Ghatak and published by World Scientific. This book was released on 2024-02-06 with total page 886 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, there has been considerable interest in studying the quantum capacitance (QC) in 2D quantum MOSFETs (QMOSFET) and 1D Nano Wire FET (NWFET) devices of various technologically important materials which find extensive applications in many directions in low dimensional electronics. The 2D and 1D electron statistics in inversion layers of MOSFETs can rather easily be varied by changing the gate voltage which, in turn, brings a change of the surface electric field, the QC depends on the gate-voltage. This first-of-its-kind book deals solely with the QC in 2D MOSFETs of non-linear optical, ternary, quaternary, III-V compounds, II-VI, IV-VI, stressed Kane type, Ge, GaP, Bismuth telluride, Gallium Antimonide and their 1D NWFETs counter parts. The influence of quantizing magnetic field, crossed electric and magnetic fields, parallel magnetic field, have also been considered on the QC of the said devices of the aforementioned materials. The influences of strong light waves and ultra-strong electric field present in nano-devices have also been considered. The accumulation layers of the quantum effect devices of the said materials have also been discussed in detail by formulating the respective dispersion relations of the heavily doped compounds. The QC in 1D MOSFET of the said materials have also been investigated in this context on the basis of newly formulated electron energy spectra in all the cases. The QC in quantum well transistors and magneto quantum well transistors together with CNTFETs have been formulated and discussed in detail along with I-V equations of ballistic QWFETs and NWFETs together with their heavily doped counter parts under different external physical conditions. In this context, experimental determinations are suggested of the Einstein relation for the Diffusivity-Mobility ratio, the Debye screening length, Elastic Constants and the content of this book finds twenty-two different applications in the arena of nanoscience and nanotechnology.This book contains hundred open research problems which form the integral part of the text and are useful for both PhD aspirants and researchers.

Fundamentals of Nanoscaled Field Effect Transistors

Author : Amit Chaudhry
Publisher : Springer Science & Business Media
ISBN 13 : 1461468221
Total Pages : 211 pages
Book Rating : 4.4/5 (614 download)

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Book Synopsis Fundamentals of Nanoscaled Field Effect Transistors by : Amit Chaudhry

Download or read book Fundamentals of Nanoscaled Field Effect Transistors written by Amit Chaudhry and published by Springer Science & Business Media. This book was released on 2013-04-23 with total page 211 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.

Field Effect Transistors, A Comprehensive Overview

Author : Pouya Valizadeh
Publisher : John Wiley & Sons
ISBN 13 : 1119155495
Total Pages : 471 pages
Book Rating : 4.1/5 (191 download)

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Book Synopsis Field Effect Transistors, A Comprehensive Overview by : Pouya Valizadeh

Download or read book Field Effect Transistors, A Comprehensive Overview written by Pouya Valizadeh and published by John Wiley & Sons. This book was released on 2016-02-23 with total page 471 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses modern-day Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and future trends of transistor devices. This book provides an overview of Field Effect Transistors (FETs) by discussing the basic principles of FETs and exploring the latest technological developments in the field. It covers and connects a wide spectrum of topics related to semiconductor device physics, physics of transistors, and advanced transistor concepts. This book contains six chapters. Chapter 1 discusses electronic materials and charge. Chapter 2 examines junctions, discusses contacts under thermal-equilibrium, metal-semiconductor contacts, and metal-insulator-semiconductor systems. Chapter 3 covers traditional planar Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). Chapter 4 describes scaling-driving technological variations and novel dimensions of MOSFETs. Chapter 5 analyzes Heterojunction Field Effect Transistors (FETs) and also discusses the challenges and rewards of heteroepitaxy. Finally, Chapter 6 examines FETs at molecular scales. Links the discussion of contemporary transistor devices to physical processes Material has been class-tested in undergraduate and graduate courses on the design of integrated circuit components taught by the author Contains examples and end-of-chapter problems Field Effect Transistors, A Comprehensive Overview: From Basic Concepts to Novel Technologies is a reference for senior undergraduate / graduate students and professional engineers needing insight into physics of operation of modern FETs. Pouya Valizadeh is Associate Professor in the Department of Electrical and Computer Engineering at Concordia University in Quebec, Canada. He received B.S. and M.S. degrees with honors from the University of Tehran and Ph.D. degree from The University of Michigan (Ann Arbor) all in Electrical Engineering in 1997, 1999, and 2005, respectively. Over the past decade, Dr. Valizadeh has taught numerous sections of five different courses covering topics such as semiconductor process technology, semiconductor materials and their properties, advanced solid state devices, transistor design for modern CMOS technology, and high speed transistors.

Quantum Physics of Semiconductor Materials and Devices

Author : Debdeep Jena
Publisher : Oxford University Press
ISBN 13 : 0192598929
Total Pages : 896 pages
Book Rating : 4.1/5 (925 download)

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Book Synopsis Quantum Physics of Semiconductor Materials and Devices by : Debdeep Jena

Download or read book Quantum Physics of Semiconductor Materials and Devices written by Debdeep Jena and published by Oxford University Press. This book was released on 2022-05-26 with total page 896 pages. Available in PDF, EPUB and Kindle. Book excerpt: ”Quantum Phenomena do not occur in a Hilbert space. They occur in a laboratory”. - Asher Peres Semiconductor physics is a laboratory to learn and discover the concepts of quantum mechanics and thermodynamics, condensed matter physics, and materials science, and the payoffs are almost immediate in the form of useful semiconductor devices. Debdeep Jena has had the opportunity to work on both sides of the fence - on the fundamental materials science and quantum physics of semiconductors, and in their applications in semiconductor electronic and photonic devices. In Quantum Physics of Semiconductors and Nanostructures, Jena uses this experience to make each topic as tangible and accessible as possible to students at all levels. Consider the simplest physical processes that occur in semiconductors: electron or hole transport in bands and over barriers, collision of electrons with the atoms in the crystal, or when electrons and holes annihilate each other to produce a photon. The correct explanation of these processes require a quantum mechanical treatment. Any shortcuts lead to misconceptions that can take years to dispel, and sometimes become roadblocks towards a deeper understanding and appreciation of the richness of the subject. A typical introductory course on semiconductor physics would then require prerequisites of quantum mechanics, statistical physics and thermodynamics, materials science, and electromagnetism. Rarely would a student have all this background when (s)he takes a course of this nature in most universities. Jena's work fills in these gaps and gives students the background and deeper understanding of the quantum physics of semiconductors and nanostructures.

Emerging Trends in Terahertz Solid-State Physics and Devices

Author : Arindam Biswas
Publisher : Springer Nature
ISBN 13 : 9811532354
Total Pages : 210 pages
Book Rating : 4.8/5 (115 download)

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Book Synopsis Emerging Trends in Terahertz Solid-State Physics and Devices by : Arindam Biswas

Download or read book Emerging Trends in Terahertz Solid-State Physics and Devices written by Arindam Biswas and published by Springer Nature. This book was released on 2020-03-20 with total page 210 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book highlights recent advances and applications in terahertz (THz) technology, addressing advanced topics such as THz biomedical imaging, pattern recognition and tomographic reconstruction for THz biomedical imaging by machine learning and artificial intelligence, THz imaging radars for autonomous vehicle applications, and THz imaging systems for security and surveillance. It also discusses theoretical, experimental, established and validated empirical work on these topics.

Quantum Mechanics

Author : David Ferry
Publisher : CRC Press
ISBN 13 : 142003362X
Total Pages : 357 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis Quantum Mechanics by : David Ferry

Download or read book Quantum Mechanics written by David Ferry and published by CRC Press. This book was released on 2001-01-01 with total page 357 pages. Available in PDF, EPUB and Kindle. Book excerpt: This superior resource, whether used in the classroom or for self-study, provides a complete grounding in quantum mechanics for those looking to deepen their understanding of semiconductor device physics and electrical engineering. It provides the necessary background to quantum theory for those starting work on micro- and nanoelectronic structures and will continue to provide use as a reference for those going on to work with semiconductors and lasers.

Nanoscale Device Physics

Author : Sandip Tiwari
Publisher : Oxford University Press
ISBN 13 : 0191078042
Total Pages : 682 pages
Book Rating : 4.1/5 (91 download)

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Book Synopsis Nanoscale Device Physics by : Sandip Tiwari

Download or read book Nanoscale Device Physics written by Sandip Tiwari and published by Oxford University Press. This book was released on 2017-03-31 with total page 682 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoscale devices differ from larger microscale devices because they depend on the physical phenomena and effects that are central to their operation. This textbook illuminates the behavior of nanoscale devices by connecting them to the electronic, as well as magnetic, optical and mechanical properties, which fundamentally affect nanoscale devices in fascinating ways. Their small size means that an understanding of the phenomena measured is even more important, as their effects are so dominant and the changes in scale of underlying energetics and response are significant. Examples of these include classical effects such as single electron effects, quantum effects such as the states accessible as well as their properties; ensemble effects ranging from consequences of the laws of numbers to changes in properties arising from different magnitudes of the interactions, and others. These interactions, with the limits on size, make their physical behavior interesting, important and useful. The collection of four textbooks in the Electroscience Series culminates in a comprehensive understanding of nanoscale devices — electronic, magnetic, mechanical and optical — in the 4th volume. The series builds up to this last subject with volumes devoted to underlying semiconductor and solid-state physics.

Toward Quantum FinFET

Author : Weihua Han
Publisher : Springer Science & Business Media
ISBN 13 : 3319020218
Total Pages : 369 pages
Book Rating : 4.3/5 (19 download)

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Book Synopsis Toward Quantum FinFET by : Weihua Han

Download or read book Toward Quantum FinFET written by Weihua Han and published by Springer Science & Business Media. This book was released on 2013-11-23 with total page 369 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reviews a range of quantum phenomena in novel nanoscale transistors called FinFETs, including quantized conductance of 1D transport, single electron effect, tunneling transport, etc. The goal is to create a fundamental bridge between quantum FinFET and nanotechnology to stimulate readers' interest in developing new types of semiconductor technology. Although the rapid development of micro-nano fabrication is driving the MOSFET downscaling trend that is evolving from planar channel to nonplanar FinFET, silicon-based CMOS technology is expected to face fundamental limits in the near future. Therefore, new types of nanoscale devices are being investigated aggressively to take advantage of the quantum effect in carrier transport. The quantum confinement effect of FinFET at room temperatures was reported following the breakthrough to sub-10nm scale technology in silicon nanowires. With chapters written by leading scientists throughout the world, Toward Quantum FinFET provides a comprehensive introduction to the field as well as a platform for knowledge sharing and dissemination of the latest advances. As a roadmap to guide further research in an area of increasing importance for the future development of materials science, nanofabrication technology, and nano-electronic devices, the book can be recommended for Physics, Electrical Engineering, and Materials Science departments, and as a reference on micro-nano electronic science and device design. Offers comprehensive coverage of novel nanoscale transistors with quantum confinement effect Provides the keys to understanding the emerging area of the quantum FinFET Written by leading experts in each research area Describes a key enabling technology for research and development of nanofabrication and nanoelectronic devices

Nanowire Transistors

Author : Jean-Pierre Colinge
Publisher : Cambridge University Press
ISBN 13 : 1107052408
Total Pages : 269 pages
Book Rating : 4.1/5 (7 download)

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Book Synopsis Nanowire Transistors by : Jean-Pierre Colinge

Download or read book Nanowire Transistors written by Jean-Pierre Colinge and published by Cambridge University Press. This book was released on 2016-04-21 with total page 269 pages. Available in PDF, EPUB and Kindle. Book excerpt: A self-contained and up-to-date account of the current developments in the physics and technology of nanowire semiconductor devices.

Nanoelectronics and Information Technology

Author : Rainer Waser
Publisher : John Wiley & Sons
ISBN 13 : 3527409270
Total Pages : 1041 pages
Book Rating : 4.5/5 (274 download)

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Book Synopsis Nanoelectronics and Information Technology by : Rainer Waser

Download or read book Nanoelectronics and Information Technology written by Rainer Waser and published by John Wiley & Sons. This book was released on 2012-05-29 with total page 1041 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fachlich auf höchstem Niveau, visuell überzeugend und durchgängig farbig illustriert: Das ist die neue Auflage der praxisbewährten Einführung in spezialisierte elektronische Materialien und Bauelemente aus der Informationstechnologie. Über ein Drittel des Inhalts ist neu, alle anderen Beiträge wurden gründlich überarbeitet und aktualisiert.

Fundamentals of Tunnel Field-Effect Transistors

Author : Sneh Saurabh
Publisher : CRC Press
ISBN 13 : 9781498767132
Total Pages : 0 pages
Book Rating : 4.7/5 (671 download)

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Book Synopsis Fundamentals of Tunnel Field-Effect Transistors by : Sneh Saurabh

Download or read book Fundamentals of Tunnel Field-Effect Transistors written by Sneh Saurabh and published by CRC Press. This book was released on 2016-10-18 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: 6.3.2 Quantum Capacitance

Negative Capacitance Field Effect Transistors

Author : Young Suh Song
Publisher : CRC Press
ISBN 13 : 1000933334
Total Pages : 167 pages
Book Rating : 4.0/5 (9 download)

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Book Synopsis Negative Capacitance Field Effect Transistors by : Young Suh Song

Download or read book Negative Capacitance Field Effect Transistors written by Young Suh Song and published by CRC Press. This book was released on 2023-10-31 with total page 167 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book aims to provide information in the ever-growing field of low-power electronic devices and their applications in portable devices, wireless communication, sensor, and circuit domains. Negative Capacitance Field Effect Transistors: Physics, Design, Modeling and Applications discusses low-power semiconductor technology and addresses state-of-the-art techniques such as negative capacitance field effect transistors and tunnel field effect transistors. The book is split into three parts. The first part discusses the foundations of low-power electronics, including the challenges and demands and concepts such as subthreshold swing. The second part discusses the basic operations of negative capacitance field effect transistors (NCFETs) and tunnel field effect transistors (TFETs). The third part covers industrial applications including cryogenics and biosensors with NC-FET. This book is designed to be a one-stop guide for students and academic researchers, to understand recent trends in the IT industry and semiconductor industry. It will also be of interest to researchers in the field of nanodevices such as NC-FET, FinFET, tunnel FET, and device–circuit codesign.

Microelectronics Technology and Devices, SBMICRO 2002

Author : Electrochemical Society. Electronics Division
Publisher : The Electrochemical Society
ISBN 13 : 9781566773287
Total Pages : 506 pages
Book Rating : 4.7/5 (732 download)

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Book Synopsis Microelectronics Technology and Devices, SBMICRO 2002 by : Electrochemical Society. Electronics Division

Download or read book Microelectronics Technology and Devices, SBMICRO 2002 written by Electrochemical Society. Electronics Division and published by The Electrochemical Society. This book was released on 2002 with total page 506 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Quantum Mechanics

Author : David K. Ferry
Publisher : CRC Press
ISBN 13 :
Total Pages : 308 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Quantum Mechanics by : David K. Ferry

Download or read book Quantum Mechanics written by David K. Ferry and published by CRC Press. This book was released on 1995-01-13 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt: Quantum Mechanics: An Introduction for Device Physicists and Electrical Engineers addresses the theoretical basics for a group previously poorly catered for. It presents topics of relevance with due importance in a logical order. It is intended for graduate students who have taken a course in (semiconductor) materials and who have studied linear vector spaces and electromagnetic field theory.

Topics In Nanoscience - Part I: Basic Views, Complex Nanosystems: Typical Results And Future

Author : Wolfram Schommers
Publisher : World Scientific
ISBN 13 : 9811243875
Total Pages : 466 pages
Book Rating : 4.8/5 (112 download)

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Book Synopsis Topics In Nanoscience - Part I: Basic Views, Complex Nanosystems: Typical Results And Future by : Wolfram Schommers

Download or read book Topics In Nanoscience - Part I: Basic Views, Complex Nanosystems: Typical Results And Future written by Wolfram Schommers and published by World Scientific. This book was released on 2021-12-17 with total page 466 pages. Available in PDF, EPUB and Kindle. Book excerpt: With the development of the scanning tunneling microscope, nanoscience became an important discipline. Single atoms could be manipulated in a controlled manner, and it became possible to change matter at its 'ultimate' level; it is the level on which the properties of matter emerge. This possibility enables to construct and to produce devices, materials, etc. with very small sizes and completely new properties. That opens up new perspectives for technology and is in particular relevant in connection with nano-engineering.Nanosystems are unimaginably small and very fast. No doubt, this is an important characteristic. But there is another feature, possibly more relevant, in connection with nanoscience and nanotechnology. The essential point here is that we work at the 'ultimate level'. This is the smallest level at which the properties of our world emerge, at which functional matter can exist. In particular, at this level biological individuality comes into existence. This situation can be expressed in absolute terms: This is not only the strongest material ever made, this is the strongest material it will ever be possible to make (D Ratner and M Ratner, Nanotechnology and Homeland Security). This is a very general statement. All aspects of matter are concerned here. Through the variation of the composition various forms of matter emerge with different items.Nanosystems are usually small, but they offer nevertheless the possibility to vary the structure of atomic (molecular) ensembles, creating a diversity of new material-specific properties. A large variety of experimental possibilities come into play and flexible theoretical tools are needed at the basic level. This is reflected in the different disciplines: In nanoscience and nanotechnology we have various directions: Materials science, functional nanomaterials, nanoparticles, food chemistry, medicine with brain research, quantum and molecular computing, bioinformatics, magnetic nanostructures, nano-optics, nano-electronics, etc.The properties of matter, which are involved within these nanodisciplines, are ultimate in character, i.e., their characteristic properties come into existence at this level. The book is organized in this respect.

Quantum Transport in One-dimensional Nanostructures

Author : Joseph Albert Sulpizio
Publisher : Stanford University
ISBN 13 :
Total Pages : 171 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis Quantum Transport in One-dimensional Nanostructures by : Joseph Albert Sulpizio

Download or read book Quantum Transport in One-dimensional Nanostructures written by Joseph Albert Sulpizio and published by Stanford University. This book was released on 2011 with total page 171 pages. Available in PDF, EPUB and Kindle. Book excerpt: One-dimensional (1D) electronic nanostructures comprise a class of systems that boast tremendous promise for both technological innovation as well as fundamental scientific discovery. To fully harness their potential, it is crucial to understand transport through 1D systems at the most fundamental, quantum level. In this thesis, we describe our investigations down three avenues of quantum transport in 1D: (1) ballistic transport in quantum wires, (2) quantum capacitance measurements of nanostructures, and (3) tunneling measurements in carbon nanotubes. First, we discuss measurements and modeling of hole transport in ballistic quantum wires fabricated by GaAs/AlGaAs cleaved-edge overgrowth, where we find strong g-factor anisotropy, which we associate with spin-orbit coupling, and evidence for the importance of charge interactions, indicated by the observation of "0.7" structure. Additionally, we present the first experimental observation of a predicted spin-orbit gap in the 1D density of states, where counter-propagating spins constituting a spin current are accompanied by a clear signal in the conductance. Next, we present the development of a highly sensitive integrated capacitance bridge for quantum capacitance measurements to be used as a novel probe of 1D systems. We demonstrate the utility of our bridge by measuring the capacitance of top-gated graphene devices, where we cleanly resolve the density of states, and also present preliminary measurements of carbon nanotube devices, where we ultimately aim to extract their mobility. Finally, we discuss a set of transport measurements in carbon nanotubes designed to probe interactions between fermions in 1D in which top gates are used to introduce tunable tunnel barriers.

Generation, Detection and Processing of Terahertz Signals

Author : Aritra Acharyya
Publisher : Springer Nature
ISBN 13 : 9811649472
Total Pages : 367 pages
Book Rating : 4.8/5 (116 download)

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Book Synopsis Generation, Detection and Processing of Terahertz Signals by : Aritra Acharyya

Download or read book Generation, Detection and Processing of Terahertz Signals written by Aritra Acharyya and published by Springer Nature. This book was released on 2021-09-21 with total page 367 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains detailed descriptions and associated discussions regarding different generation, detection and signal processing techniques for the electrical and optical signals within the THz frequency spectrum (0.3–10 THz). It includes detailed reviews of some recently developed electronic and photonic devices for generating and detecting THz waves, potential materials for implementing THz passive circuits, some newly developed systems and methods associated with THz wireless communication, THz antennas and some cutting-edge techniques associated with the THz signal and image processing. The book especially focuses on the recent advancements and several research issues related to THz sources, detectors and THz signal and image processing techniques; it also discusses theoretical, experimental, established and validated empirical works on these topics. The book caters to a very wide range of readers from basic science to technological experts as well as students.