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Pulsed Laser Annealing Of Ion Implanted Gaas
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Book Synopsis Pulsed-laser Annealing of Ion-implanted GaAs by :
Download or read book Pulsed-laser Annealing of Ion-implanted GaAs written by and published by . This book was released on 1980 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: It is shown that, in the pulsed-laser irradiation of crystalline or lightly damaged GaAs, good agreement is obtained between measured and calculated thresholds for melting, for catastrophic damage due to vaporization, and for the duration of surface melting at various energy densities. Good agreement between theory and experiment is also obtained for dopant profile spreading during pulsed-laser annealing.
Book Synopsis Pulsed Laser Annealing of Ion Implanted Gallium Arsenide by : Arkady Michael Horak
Download or read book Pulsed Laser Annealing of Ion Implanted Gallium Arsenide written by Arkady Michael Horak and published by . This book was released on 1987 with total page 78 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Characterization of Laser Annealing of Ion Implanted GaAs and Si Using Optical Reflectivity by : Bill W. Mullins
Download or read book Characterization of Laser Annealing of Ion Implanted GaAs and Si Using Optical Reflectivity written by Bill W. Mullins and published by . This book was released on 1979 with total page 66 pages. Available in PDF, EPUB and Kindle. Book excerpt: The effect of laser annealing on ion implanted GaAs and Si has been assessed using optical reflectivity spectra. The spectra were recorded over the range of 2100A to 4500A and reflectivity peaks were obtained near 2400A and 4100A for GaAs and 2700A and 3700A for Si. The magnitude of these peaks was then observed as a function of annealing parameters. Laser annealing was carried out using a 30 nsec ruby laser pulse. The GaAs samples were implanted 120 KeV Te at a fluence of 10 to the 14th power ions/sq. cm; Si samples were implanted with 30 KeV In at a fluence of 10 to the 15th power ions/sq cm. The reflectivity spectrum of implanted GaAs was found to return to that of unimplanted materials at an annealing energy density of approximately 0.35 J sq. cm. whereas the spectrum of Si was found to approach that of the unimplanted samples at energy densities of 1.34 J/sq. cm. The values obtained compare well with those obtained from other diagnostic techniques. (Author).
Book Synopsis Impact of Ion Implantation on Quantum Dot Heterostructures and Devices by : Arjun Mandal
Download or read book Impact of Ion Implantation on Quantum Dot Heterostructures and Devices written by Arjun Mandal and published by Springer. This book was released on 2017-06-02 with total page 84 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book looks at the effects of ion implantation as an effective post-growth technique to improve the material properties, and ultimately, the device performance of In(Ga)As/GaAs quantum dot (QD) heterostructures. Over the past two decades, In(Ga)As/GaAs-based QD heterostructures have marked their superiority, particularly for application in lasers and photodetectors. Several in-situ and ex-situ techniques that improve material quality and device performance have already been reported. These techniques are necessary to maintain dot density and dot size uniformity in QD heterostructures and also to improve the material quality of heterostructures by removing defects from the system. While rapid thermal annealing, pulsed laser annealing and the hydrogen passivation technique have been popular as post-growth methods, ion implantation had not been explored largely as a post-growth method for improving the material properties of In(Ga)As/GaAs QD heterostructures. This work attempts to remedy this gap in the literature. The work also looks at introduction of a capping layer of quaternary alloy InAlGaAs over these In(Ga)As/GaAs QDs to achieve better QD characteristics. The contents of this volume will prove useful to researchers and professionals involved in the study of QDs and QD-based devices.
Book Synopsis Ion Implantation and Beam Processing by : J. S. Williams
Download or read book Ion Implantation and Beam Processing written by J. S. Williams and published by Academic Press. This book was released on 2014-06-28 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion Implantation and Beam Processing covers the scientific and technological advances in the fields of ion implantation and beam processing. The book discusses the amorphization and crystallization of semiconductors; the application of the Boltzmann transport equation to ion implantation in semiconductors and multilayer targets; and the high energy density collision cascades and spike effects. The text also describes the implantation of insulators (ices and lithographic materials); the ion-bombardment-induced compositions changes in alloys and compounds; and the fundamentals and applications of ion beam and laser mixing. The high-dose implantation and the trends of ion implantation in silicon technology are also considered. The book further tackles the implantation in gaAs technology and the contacts and interconnections on semiconductors. Engineers and people involved in microelectronics will find the book invaluable.
Book Synopsis Characterization of Laser Annealing of Ion Implanted GaAs and Si Using Optical Reflectivity by : Bill W. Mullins (2LT, USAF.)
Download or read book Characterization of Laser Annealing of Ion Implanted GaAs and Si Using Optical Reflectivity written by Bill W. Mullins (2LT, USAF.) and published by . This book was released on 1979 with total page 112 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis GaAs Devices and Circuits by : Michael S. Shur
Download or read book GaAs Devices and Circuits written by Michael S. Shur and published by Springer Science & Business Media. This book was released on 2013-11-21 with total page 677 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.
Book Synopsis Double-Crystal X-Ray Diffraction Studies of Si Ion-Implanted Laser- Annealed GaAs by :
Download or read book Double-Crystal X-Ray Diffraction Studies of Si Ion-Implanted Laser- Annealed GaAs written by and published by . This book was released on 1991 with total page 45 pages. Available in PDF, EPUB and Kindle. Book excerpt: Double-crystal x-ray rocking curves and topographs have been used to study the relief of strain produced by pulsed laser annealing in 28Si+ ion- implanted GaAs. X-ray rocking curves of 140 keV 2 x 1014/cm2 as-implanted GaAs indicated that the upper 2500 angstroms of the sample had been strained to a maximum of 0.38. Rocking curves from two of a single-shot laser anneal sites with the highest energy densities (and largest areas of annealing) indicated that the ion-implantation strain had been almost completely relieved. X-ray rocking curves of the 180 keV 5 x 1015/cm2 as-implanted GaAs revealed that the surface of the sample has been strained to a depth of 6000 angstroms with a maximum strain of 0.50%. Rocking curves from rastered laser anneal sites indicated that considerable strain remained in the sample.
Book Synopsis Laser Annealing of Semiconductors by : J Poate
Download or read book Laser Annealing of Semiconductors written by J Poate and published by Elsevier. This book was released on 2012-12-02 with total page 577 pages. Available in PDF, EPUB and Kindle. Book excerpt: Laser Annealing of Semiconductors deals with the materials science of surfaces that have been subjected to ultrafast heating by intense laser or electron beams. This book is organized into 13 chapters that specifically tackle transient annealing of compound semiconductors. After briefly dealing with an overview of laser annealing, this book goes on discussing the concepts of solidification and crystallization pertinent to the field. These topics are followed by discussions on the main mechanisms of interaction of photon and electron beams with condensed matter; the calculation of thermophysical properties of crystalline materials; and high-speed crystal growth by laser annealing of ion-implanted silicon. The subsequent chapters describe the microstructural and topographical properties of annealed semiconductor layers and the epitaxy of ion-implanted silicon irradiated with a laser or electron beam single pulse. This text also explores the electronic and surface properties and the continuous-wave beam processing of semiconductors. The concluding chapters cover various reactions in metal-semiconductor systems, such as fast and laser-induced melting, solidification, mixing, and quenching. Laser-induced interactions in metal-semiconductor systems and the factors involved in control of the heat treatment process are also discussed in these chapters. Materials scientists and researchers and device engineers will find this book invaluable.
Book Synopsis Laser Annealing of Ion Implanted Gallium Arsenide by : Robert S. Mason
Download or read book Laser Annealing of Ion Implanted Gallium Arsenide written by Robert S. Mason and published by . This book was released on 1978 with total page 68 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implanted GaAs, irradiated by a Q-switched ruby laser, is examined primarily by cathodoluminescence, as well as ellipsometry and electrical measurements, to evaluate the quality of laser anneal. Weak cathodoluminescence spectra from laser irradiated samples indicate far less radiative centers than in thermally annealed samples. Emitted radiation from existing centers is attenuated by the formation of a surface layer on GaAs during exposure to the ruby laser, resulting in spectra which is slightly weaker than spectra representative of the material's condition. This attenuating layer occurs in both virgin and implanted GaAs exposed to ruby laser radiation. Ion implanted Si, exposed to the same Q-switched ruby laser, is examined by Rutherford backscattering and indicates a return to crystallinity of the implant layer. (Author).
Book Synopsis Laser Annealing of GaAs by : F. H. Eisen
Download or read book Laser Annealing of GaAs written by F. H. Eisen and published by . This book was released on 1980 with total page 58 pages. Available in PDF, EPUB and Kindle. Book excerpt: Irradiations of appropriate energy densities from a pulsed ruby laser lambda = 0.69 microns, tp approx. 15 or 59 ns) or a pulsed electron beam (energy approx. 20 keV, t(p) approx. 100 ns) were found to anneal implanted amorphous layers in GaAs successfully without using an encapsulant. This was confirmed by backscattering/channeling and TEM measurements. Good electrical activation of high dose (greater than 10 to the 15th power sq. cm) implanted donor ions, with peak electron concentrations higher than 10 to the 19th power cc), was achieved after both pulsed ruby laser and pulsed electron beam irradiations. Low dose less than 10 to the 13th power sq. cm) donor ion implanted samples irradiated with ruby laser or electron beam pulses did not show any measurable electrical activity. Possible reasons for this apparent inactivity were explored but the exact reasons are not clear at present. Au-Ge/Pt ohmic contacts with specific contact resistance as low as 10 to the -7th power omega/sq.cm were fabricated on n-type GaAs by pulsed electron beam alloying. This value of the specific contact resistance is one of the lowest values reported so far. (Author).
Book Synopsis Dynamical Aspects of Pulsed Laser Annealing of Ion-implanted Silicon by : Yoshihiko Kanemitsu
Download or read book Dynamical Aspects of Pulsed Laser Annealing of Ion-implanted Silicon written by Yoshihiko Kanemitsu and published by . This book was released on 1983 with total page 28 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ion Implantation: Equipment and Techniques by : H. Ryssel
Download or read book Ion Implantation: Equipment and Techniques written by H. Ryssel and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 564 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Fourth International Conference on Ion Implantation: Equipment and Tech niques was held at the Convention Center in Berchtesgaden, Bavaria, Germany, from September 13 to 17, 1982. It was attended by more than 200 participants from over 20 different countries. Severa1 series of conferences have dealt with the app1ication of ion implantation to semiconductors and other materials (Thousand Oaks, 1970; Garmisch-Partenkirchen, 1971; Osaka, 1974; Warwick, 1975; Bou1der, 1975; Budapest, 1978; and Albany, 1980). Another series of conferences has been devoted to implantation equipment and techniques (S- ford, 1977; Trento, 1978; and Kingston, 1980). This conference was the fourth in the 1atter series. Twe1ve invited papers and 55 contributed papers covered the areas of ion implantation equipment, measuring techniques, and app1ica tions of implantation to metals and semiconductors. A schoo1 on ion implantation was held in connection with the conference, and the 1ectures presented at this schoo1 were pub1ished as Vo1. 10 of the Springer Series in E1ectrophysics under the tit1e Ion Implantation Techniques (edited by H. Rysse1 and H. G1awischnig). During the conference, space was also provided for presentations and demonstrations by manufacturers of ion implantation equipment. Once again, this conference provided a forum for free discussion among implantation specia1ists in industry as we11 as research institutions. Espe cially effective in stimulating a free exchange of information was the daily get-together over free beer at the "Bier Adam". Many people contributed to the success of this conference.
Book Synopsis Laser Annealing of Ion Implanted Semiconductors by : J. F. Morhange
Download or read book Laser Annealing of Ion Implanted Semiconductors written by J. F. Morhange and published by . This book was released on 1984 with total page 80 pages. Available in PDF, EPUB and Kindle. Book excerpt: Contents: Raman Spectroscopy of Amorphous GaAs of Crystalline Transition Induced by Laser Annealing; The Vibration of a Gallium Arsenide Microcristallite; Experimental Determination of the Temperature of Silicon at the Spot of a Continuous Laser; Raman Spectroscopy of Very Heavily Doped Silicon; Sub-Picosecond Spectroscopy. Annexes: Lattice Dynamics of Thin Ionic Slabs; Anharmonic Effects in Light Scattering Due to Optical Phonons in Silicon; Fundamental of Laser Annealing.
Book Synopsis Ion Implantation Technology - 94 by : S. Coffa
Download or read book Ion Implantation Technology - 94 written by S. Coffa and published by Newnes. This book was released on 1995-05-16 with total page 1031 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aim of these proceedings is to present and stimulate discussion on the many subjects related to ion implantation among a broad mix of specialists from areas as diverse as materials science, device production and advanced ion implanters. The contents open with a paper on the future developments of the microelectronics industry in Europe within the framework of the global competition. The subsequent invited and oral presentations cover in detail the following areas: trends in processing and devices, ion-solid interaction, materials science issues, advanced implanter systms, process control and yield, future trends and applications.
Book Synopsis Laser Annealing of Ion Implanted Gallium Arsenide by : Robert S. Mason (2LT, USAF.)
Download or read book Laser Annealing of Ion Implanted Gallium Arsenide written by Robert S. Mason (2LT, USAF.) and published by . This book was released on 1978 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Materials Analysis by Ion Channeling by : Leonard C. Feldman
Download or read book Materials Analysis by Ion Channeling written by Leonard C. Feldman and published by Academic Press. This book was released on 2012-12-02 with total page 321 pages. Available in PDF, EPUB and Kindle. Book excerpt: Our intention has been to write a book that would be useful to people with a variety of levels of interest in this subject. Clearly it should be useful to both graduate students and workers in the field. We have attempted to bring together many of the concepts used in channeling beam analysis with an indication of the origin of the ideas within fundamental channeling theory. The level of the book is appropriate to senior under-graduates and graduate students who have had a modern physics course work in related areas of materials science and wish to learn more about the "channeling" probe, its strengths, weaknesses, and areas of further potential application. To them we hope we have explained this apparent paradox of using mega-electron volt ions to probe solid state phenomena that have characteristic energies of electron volts.
