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Profiles Of Silicon In Ion Implanted Semi Insulating Gallium Arsenide
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Book Synopsis Ion Implantation in Semiconductors 1976 by : Fred Chernow
Download or read book Ion Implantation in Semiconductors 1976 written by Fred Chernow and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 733 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Fifth International Conference on Ion Implantation took place in Boulder, Colorado between the 9th and 13th of August 1976. Papers were delivered by scientists and engineers from 15 countries, and the attendees represented 19 countries. As has become the custom at these conferences, the sessions were intense with the coffee breaks and evenings given to informal meetings among the participants. It was a time to renew old friendships, begin new ones, exchange ideas, personally question authors of papers that appeared in the literature since the last conference and find out what was generally happening in Ion Implantation. In recent years it has beome more difficult to get funding to travel to such meetings. To assist the participating authors financial aid was solicited from industry and the Office of Naval Research. We are most grateful for their positive response to our requests. The success of the conference was in part due to their generous contributions. The Program Committee had the unhappy task of the reviewing of more than 170 abstracts. The result of their labors was well worth their effort. Much thanks goes to them for molding the conference into an accurate representation of activities in the field. Behind the scenes in Boulder, local arrangements were handled ably by Graeme Eldridge. The difficulty of this task cannot be overemphasized. Our thanks to him for a job well done.
Book Synopsis Ion Implantation in Semiconductors by : Susumu Namba
Download or read book Ion Implantation in Semiconductors written by Susumu Namba and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt: The technique of ion implantation has become a very useful and stable technique in the field of semiconductor device fabrication. This use of ion implantation is being adopted by industry. Another important application is the fundamental study of the physical properties of materials. The First Conference on Ion Implantation in Semiconductors was held at Thousand Oaks, California in 1970. The second conference in this series was held at Garmish-Partenkirchen, Germany, in 1971. At the third conference, which convened at Yorktown Heights, New York in 1973, the emphasis was broadened to include metals and insulators as well as semiconductors. This scope of the conference was still accepted at the fourth conference which was held at Osaka, Japan, in 1974. A huge number of papers had been submitted to this conference. All papers which were presented at the Fourth International Conference on Ion Implantation in Semiconductors and Other Materials are included in this proceedings. The success of this conference was due to technical presentations and discussions of 224 participants from 14 countries as well as to financial support from many companies in Japan. On behalf of the committee, I wish to thank the authors for their excellent papers and the sponsors for their financial support. The International Committee responsible for advising this conference consisted of B.L. Crowder, J.A. Davies, G. Dearna1ey, F.H. Eisen, Ph. G1otin, T. Itoh, A.U. MacRae, J.W. Mayer, S. Namba, I. Ruge, and F.L. Vook.
Book Synopsis Ion Implantation: Equipment and Techniques by : H. Ryssel
Download or read book Ion Implantation: Equipment and Techniques written by H. Ryssel and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 564 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Fourth International Conference on Ion Implantation: Equipment and Tech niques was held at the Convention Center in Berchtesgaden, Bavaria, Germany, from September 13 to 17, 1982. It was attended by more than 200 participants from over 20 different countries. Severa1 series of conferences have dealt with the app1ication of ion implantation to semiconductors and other materials (Thousand Oaks, 1970; Garmisch-Partenkirchen, 1971; Osaka, 1974; Warwick, 1975; Bou1der, 1975; Budapest, 1978; and Albany, 1980). Another series of conferences has been devoted to implantation equipment and techniques (S- ford, 1977; Trento, 1978; and Kingston, 1980). This conference was the fourth in the 1atter series. Twe1ve invited papers and 55 contributed papers covered the areas of ion implantation equipment, measuring techniques, and app1ica tions of implantation to metals and semiconductors. A schoo1 on ion implantation was held in connection with the conference, and the 1ectures presented at this schoo1 were pub1ished as Vo1. 10 of the Springer Series in E1ectrophysics under the tit1e Ion Implantation Techniques (edited by H. Rysse1 and H. G1awischnig). During the conference, space was also provided for presentations and demonstrations by manufacturers of ion implantation equipment. Once again, this conference provided a forum for free discussion among implantation specia1ists in industry as we11 as research institutions. Espe cially effective in stimulating a free exchange of information was the daily get-together over free beer at the "Bier Adam". Many people contributed to the success of this conference.
Book Synopsis Ion Implantation Technology - 92 by : D.F. Downey
Download or read book Ion Implantation Technology - 92 written by D.F. Downey and published by Elsevier. This book was released on 2012-12-02 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation technology has made a major contribution to the dramatic advances in integrated circuit technology since the early 1970's. The ever-present need for accurate models in ion implanted species will become absolutely vital in the future due to shrinking feature sizes. Successful wide application of ion implantation, as well as exploitation of newly identified opportunities, will require the development of comprehensive implant models. The 141 papers (including 24 invited papers) in this volume address the most recent developments in this field. New structures and possible approaches are described. The implications for ion implantation technology as well as additional observations of needs and opportunities are discussed. The volume will be of value to all those who are interested in acquiring a more complete understanding of the current developments in ion implantation processes and comprehensive implant models.
Book Synopsis Ion Implantation Technology - 94 by : S. Coffa
Download or read book Ion Implantation Technology - 94 written by S. Coffa and published by Newnes. This book was released on 1995-05-16 with total page 1031 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aim of these proceedings is to present and stimulate discussion on the many subjects related to ion implantation among a broad mix of specialists from areas as diverse as materials science, device production and advanced ion implanters.The contents open with a paper on the future developments of the microelectronics industry in Europe within the framework of the global competition. The subsequent invited and oral presentations cover in detail the following areas: trends in processing and devices, ion-solid interaction, materials science issues, advanced implanter systms, process control and yield, future trends and applications.
Book Synopsis Report of NRL Progress by : Naval Research Laboratory (U.S.)
Download or read book Report of NRL Progress written by Naval Research Laboratory (U.S.) and published by . This book was released on 1975 with total page 822 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis GaAs Devices and Circuits by : Michael S. Shur
Download or read book GaAs Devices and Circuits written by Michael S. Shur and published by Springer Science & Business Media. This book was released on 2013-11-21 with total page 677 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.
Book Synopsis Analytical Techniques for the Characterization of Compound Semiconductors by : G. Bastard
Download or read book Analytical Techniques for the Characterization of Compound Semiconductors written by G. Bastard and published by Elsevier. This book was released on 1991-07-26 with total page 554 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is a collection of 96 papers presented at the above Conference. The scope of the work includes optical and electrical methods as well as techniques for structural and compositional characterization. The contributed papers report on topics such as X-ray diffraction, TEM, depth profiling, photoluminescence, Raman scattering and various electrical methods. Of particular interest are combinations of different techniques providing complementary information. The compound semiconductors reviewed belong mainly to the III-V and III-VI families. The papers in this volume will provide a useful reference on the implications of new technologies in the characterization of compound semiconductors.
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1987 with total page 920 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1975 with total page 700 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :Christopher M. Snowden Publisher :Springer Science & Business Media ISBN 13 :1447110331 Total Pages :267 pages Book Rating :4.4/5 (471 download)
Book Synopsis Semiconductor Device Modelling by : Christopher M. Snowden
Download or read book Semiconductor Device Modelling written by Christopher M. Snowden and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 267 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor device modelling has developed in recent years from being solely the domain of device physicists to span broader technological disciplines involved in device and electronic circuit design and develop ment. The rapid emergence of very high speed, high density integrated circuit technology and the drive towards high speed communications has meant that extremely small-scale device structures are used in contempor ary designs. The characterisation and analysis of these devices can no longer be satisfied by electrical measurements alone. Traditional equivalent circuit models and closed-form analytical models cannot always provide consis tently accurate results for all modes of operation of these very small devices. Furthermore, the highly competitive nature of the semiconductor industry has led to the need to minimise development costs and lead-time associated with introducing new designs. This has meant that there has been a greater demand for models capable of increasing our understanding of how these devices operate and capable of predicting accurate quantitative results. The desire to move towards computer aided design and expert systems has reinforced the need for models capable of representing device operation under DC, small-signal, large-signal and high frequency operation. It is also desirable to relate the physical structure of the device to the electrical performance. This demand for better models has led to the introduction of improved equivalent circuit models and a upsurge in interest in using physical models.
Book Synopsis Handbook of Compound Semiconductors by : Paul H. Holloway
Download or read book Handbook of Compound Semiconductors written by Paul H. Holloway and published by Elsevier. This book was released on 1996-12-31 with total page 937 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reviews the recent advances and current technologies used to produce microelectronic and optoelectronic devices from compound semiconductors. It provides a complete overview of the technologies necessary to grow bulk single-crystal substrates, grow hetero-or homoepitaxial films, and process advanced devices such as HBT's, QW diode lasers, etc.
Book Synopsis Gallium Arsenide and Related Compounds 1991, Proceedings of the Eighteenth INT Symposium, 9-12 September 1991, Seattle, USA by : Gerald B. Stringfellow
Download or read book Gallium Arsenide and Related Compounds 1991, Proceedings of the Eighteenth INT Symposium, 9-12 September 1991, Seattle, USA written by Gerald B. Stringfellow and published by CRC Press. This book was released on 2020-11-25 with total page 680 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide and Related Compounds 1991emphasizes current results on the materials, characterization, and device aspects of a broad range of semiconductor materials, particularly the III-V compounds and alloys. The book is a valuable reference for researchers in physics, materials science, and electronics and electrical engineering who work on III-V compounds.
Book Synopsis Abstracts of Science and Technology in Japan by :
Download or read book Abstracts of Science and Technology in Japan written by and published by . This book was released on 1987 with total page 734 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis RF and Microwave Semiconductor Device Handbook by : Mike Golio
Download or read book RF and Microwave Semiconductor Device Handbook written by Mike Golio and published by CRC Press. This book was released on 2017-12-19 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offering a single volume reference for high frequency semiconductor devices, this handbook covers basic material characteristics, system level concerns and constraints, simulation and modeling of devices, and packaging. Individual chapters detail the properties and characteristics of each semiconductor device type, including: Varactors, Schottky diodes, transit-time devices, BJTs, HBTs, MOSFETs, MESFETs, and HEMTs. Written by leading researchers in the field, the RF and Microwave Semiconductor Device Handbook provides an excellent starting point for programs involving development, technology comparison, or acquisition of RF and wireless semiconductor devices.
Download or read book Si Silicon written by Eberhard F. Krimmel and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 417 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first of three Gmelin Handbook volumes in the silicon se ries that will cover silicon nitride, a normaUy solid material with the idealized formula Si N . This volume, 3 4 "Silicon" Supplement Volume B Sc, is devoted to applications of silicon nitride in microelec tronics and solar ceUs. The compendium is the product of a critical selection among more than 17600 publications on silicon nitride issued up to January 1990. Out of a total of 5900 publications dealing with the fabrication and use of microelectronic devices (including 2400 Japanese patent applications), about 4000 papers have been selected for this volume. The current volume is grouped into three parts. Chapters 2 to 8 deal with general, non specific microelectronic applications of silicon nitride, Chapters 9 to 31 cover applications of silicon nitride in specific devices and device components, and Chapter 32 is devoted exclusively to applications in solar ceUs, including information on our general understanding of the role of silicon nitride in photovoltaic devices. Experimental results on the preparation of silicon nitride layers for application in unspeci fied devices are in Chapter 2. Whenever the preparation is in connection with specific devices, the information is presented in the respective chapters. The general preparation of silicon nitride layers is not covered in this volume, but will appear in "Silicon" Supplement Volume B 5a. See also the Introductory Remarks, Chapter 1, p. 1.
Book Synopsis Ion Beam Modification of Materials by : J.S. Williams
Download or read book Ion Beam Modification of Materials written by J.S. Williams and published by Newnes. This book was released on 2012-12-02 with total page 1157 pages. Available in PDF, EPUB and Kindle. Book excerpt: This conference consisted of 15 oral sessions, including three plenary papers covering areas of general interest, 22 specialist invited papers and 51 contributed presentations as well as three poster sessions. There were several scientific highlights covering a diverse spectrum of materials and ion beam processing methods. These included a wide range of conventional and novel applications such as: optical displays and opto-electronics, motor vehicle and tooling parts, coatings tailored for desired properties, studies of fundamental defect properties, the production of novel (often buried) compounds, and treating biomedical materials. The study of nanocrystals produced by ion implantation in a range of host matrices, particularly for opto-electronics applications, was one especially new and exciting development. Despite several decades of study, major progress was reported at the conference in understanding defect evolution in semiconductors and the role of defects in transient impurity diffusion. The use of implantation to tune or isolate optical devices and in forming optically active centres and waveguides in semiconductors, polymers and oxide ceramics was a major focus of several presentations at the conference. The formation of hard coatings by ion assisted deposition or direct implantation was also an area which showed much recent progress. Ion beam techniques had also developed apace, particularly those based on plasma immersion ion implantation or alternative techniques for large area surface treatment. Finally, the use of ion beams for the direct treatment of cancerous tissue was a particularly novel and interesting application of ion beams.
