Proceedings of the Sixth Annual Conference on the Physics of Compound Semiconductor Interfaces

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ISBN 13 :
Total Pages : 478 pages
Book Rating : 4.:/5 (318 download)

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Book Synopsis Proceedings of the Sixth Annual Conference on the Physics of Compound Semiconductor Interfaces by : Peter Mark

Download or read book Proceedings of the Sixth Annual Conference on the Physics of Compound Semiconductor Interfaces written by Peter Mark and published by . This book was released on 1979 with total page 478 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Proceedings of the 20th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces

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ISBN 13 :
Total Pages : 450 pages
Book Rating : 4.:/5 (318 download)

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Book Synopsis Proceedings of the 20th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces by : T. C. McGill

Download or read book Proceedings of the 20th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces written by T. C. McGill and published by . This book was released on 1993 with total page 450 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Proceedings of the 3rd Annual Conference on the Physics of Compound Superconductor Interfaces

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ISBN 13 :
Total Pages : 232 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis Proceedings of the 3rd Annual Conference on the Physics of Compound Superconductor Interfaces by :

Download or read book Proceedings of the 3rd Annual Conference on the Physics of Compound Superconductor Interfaces written by and published by . This book was released on 1976 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Physics Of Semiconductors, The - Proceedings Of The Xxi International Conference (In 2 Volumes)

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Publisher : World Scientific
ISBN 13 : 9814554065
Total Pages : 2151 pages
Book Rating : 4.8/5 (145 download)

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Book Synopsis Physics Of Semiconductors, The - Proceedings Of The Xxi International Conference (In 2 Volumes) by : Ping Jiang

Download or read book Physics Of Semiconductors, The - Proceedings Of The Xxi International Conference (In 2 Volumes) written by Ping Jiang and published by World Scientific. This book was released on 1993-03-31 with total page 2151 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 21st conference proceedings continue the tradition of the ICPS series. The proceedings cover all aspects of semiconductor physics, including those related to materials, processing and devices. Plenary and invited speakers address areas of major interest.

Surface and Interface Effects in VLSI

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Publisher : Academic Press
ISBN 13 : 1483217760
Total Pages : 396 pages
Book Rating : 4.4/5 (832 download)

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Book Synopsis Surface and Interface Effects in VLSI by : Norman G. Einspruch

Download or read book Surface and Interface Effects in VLSI written by Norman G. Einspruch and published by Academic Press. This book was released on 2014-12-01 with total page 396 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics Microstructure Science, Volume 10: Surface and Interface Effects in VLSI provides the advances made in the science of semiconductor surface and interface as they relate to electronics. This volume aims to provide a better understanding and control of surface and interface related properties. The book begins with an introductory chapter on the intimate link between interfaces and devices. The book is then divided into two parts. The first part covers the chemical and geometric structures of prototypical VLSI interfaces. Subjects detailed include, the technologically most important interface, Si-SiO2 and the interplay between interface chemistry and the causes for metal-semiconductor contact behavior, primarily in the III-Vs. The following section deals primarily with the electronic properties of interfaces. Under this section, compound semiconductors, semiconductor-semiconductor interface, constraints that the microscopic interface places on architectures involving metal-semiconductor (MESFET), "Ohmic" contacts, and the behavior of very small, high-speed devices are discussed extensively. The final chapter shows that the Si - SiO2 interface can play a major role in determining carrier transport when MOSFETS are scaled down to ULSI dimensions. Engineers, designers, and scientists will find the book very useful.

Physics and Chemistry of III-V Compound Semiconductor Interfaces

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Publisher : Springer Science & Business Media
ISBN 13 : 1468448358
Total Pages : 472 pages
Book Rating : 4.4/5 (684 download)

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Book Synopsis Physics and Chemistry of III-V Compound Semiconductor Interfaces by : Carl Wilmsen

Download or read book Physics and Chemistry of III-V Compound Semiconductor Interfaces written by Carl Wilmsen and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.

Proceedings of the 17th International Conference on the Physics of Semiconductors

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Publisher : Springer Science & Business Media
ISBN 13 : 1461576822
Total Pages : 1580 pages
Book Rating : 4.4/5 (615 download)

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Book Synopsis Proceedings of the 17th International Conference on the Physics of Semiconductors by : J.D. Chadi

Download or read book Proceedings of the 17th International Conference on the Physics of Semiconductors written by J.D. Chadi and published by Springer Science & Business Media. This book was released on 2013-12-01 with total page 1580 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Proceedings of the 17th International Conference on the Physics of Semiconductors are contained in this volume. A record 1050 scientists from 40 countries participated in the Conference which was held in San Francisco August 6·1 0, 1984. The Conference was organized by the ICPS Committee and sponsored by the International Union of Pure and Applied Physics and other professional, government, and industrial organizations listed on the following pages. Papers representing progress in all aspects of semiconductor physics were presented. Far more abstracts (765) than could be presented in a five-day meeting were considered by the International Program Committee. A total of 350 papers, consisting of 5 plenary, 35 invited, and 310 contributed, were presented at the Conference in either oral or poster sessions. All but a few of the papers were submitted and have been included in these Proceedings. An interesting shift in subject matter, in comparison with earlier Conferences, is manifested by the large number of papers on surfaces, interfaces, and quantum wells. To facilitate the use of the Proceedings in finding closely related papers among the sometimes relatively large number of contributions within a main subject area, we chose not to arrange the papers strictly according to the Conference schedule. We have organized the book, as can be seen from the Contents, into specific subcategories and subdivisions within each major category. Plenary and invited papers have been placed together with the appropriate contributed papers.

Proceedings of the 4th Annual Conference on the Physics of Compound Semiconductor Interfaces

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ISBN 13 :
Total Pages : 176 pages
Book Rating : 4.:/5 (318 download)

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Book Synopsis Proceedings of the 4th Annual Conference on the Physics of Compound Semiconductor Interfaces by :

Download or read book Proceedings of the 4th Annual Conference on the Physics of Compound Semiconductor Interfaces written by and published by . This book was released on 1977 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Formation Of Semiconductor Interfaces - Proceedings Of The 4th International Conference

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Publisher : World Scientific
ISBN 13 : 9814552399
Total Pages : 818 pages
Book Rating : 4.8/5 (145 download)

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Book Synopsis Formation Of Semiconductor Interfaces - Proceedings Of The 4th International Conference by : J Pollman

Download or read book Formation Of Semiconductor Interfaces - Proceedings Of The 4th International Conference written by J Pollman and published by World Scientific. This book was released on 1994-06-09 with total page 818 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor interfaces are of paramount importance in micro, nano- and optoelectronics. Basic as well as applied research on such systems is therefore of extremely high current interest. To meet the continuous need for a better understanding of semiconductor interfaces with respect to both their fundamental physical and chemical properties as well as their applications in modern opto- and microelectronics, the series of international conferences on the formation of semiconductor interfaces was begun. The fourth conference of the series held in Jülich addresses as main topics: clean semiconductor surfaces; adsorbates at semiconductor surfaces; metal-semiconductor, insulator-semiconductor and semiconductor-semiconductor interfaces; devices and wet chemical processes. The 12 invited lectures assess the present status of the research in important areas and about 180 contributed papers describe most recent achievements in the field.

Compound Semiconductors 1996, Proceedings of the Twenty-Third INT Symposium on Compound Semiconductors held in St Petersburg, Russia, 23-27 September 1996

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Publisher : CRC Press
ISBN 13 : 1000157121
Total Pages : 1096 pages
Book Rating : 4.0/5 (1 download)

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Book Synopsis Compound Semiconductors 1996, Proceedings of the Twenty-Third INT Symposium on Compound Semiconductors held in St Petersburg, Russia, 23-27 September 1996 by : M.S. Shur

Download or read book Compound Semiconductors 1996, Proceedings of the Twenty-Third INT Symposium on Compound Semiconductors held in St Petersburg, Russia, 23-27 September 1996 written by M.S. Shur and published by CRC Press. This book was released on 2020-10-29 with total page 1096 pages. Available in PDF, EPUB and Kindle. Book excerpt: Providing a comprehensive overview of developments to both the academic and industrial communities, Compound Semiconductors 1996 covers all types of compound semiconducting materials and devices. The book includes results on blue and green lasers, heterostructure devices, nanoelectronics, and novel wide band gap semiconductors. With invited review papers and research results in current topics of interest, this volume is part of a well-known series of conferences for the dissemination of research results in the field.

Proceedings of the 19th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces

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ISBN 13 :
Total Pages : 450 pages
Book Rating : 4.:/5 (318 download)

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Book Synopsis Proceedings of the 19th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces by : Thomas C. MacGill

Download or read book Proceedings of the 19th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces written by Thomas C. MacGill and published by . This book was released on 1992 with total page 450 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Nuclear Science Abstracts

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ISBN 13 :
Total Pages : 764 pages
Book Rating : 4.E/5 ( download)

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Book Synopsis Nuclear Science Abstracts by :

Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1974 with total page 764 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Proceedings of the 16th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces

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ISBN 13 :
Total Pages : 376 pages
Book Rating : 4.:/5 (318 download)

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Book Synopsis Proceedings of the 16th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces by :

Download or read book Proceedings of the 16th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces written by and published by . This book was released on 1989 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Index of Conference Proceedings

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ISBN 13 :
Total Pages : 836 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis Index of Conference Proceedings by : British Library. Document Supply Centre

Download or read book Index of Conference Proceedings written by British Library. Document Supply Centre and published by . This book was released on 2000 with total page 836 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Scientific and Technical Aerospace Reports

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ISBN 13 :
Total Pages : 704 pages
Book Rating : 4.:/5 (31 download)

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Book Synopsis Scientific and Technical Aerospace Reports by :

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:

VLSI Electronics: Surface and interface effects in VLSI

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ISBN 13 :
Total Pages : 408 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis VLSI Electronics: Surface and interface effects in VLSI by : Norman G. Einspruch

Download or read book VLSI Electronics: Surface and interface effects in VLSI written by Norman G. Einspruch and published by . This book was released on 1981 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Proceedings of the 11th International Conference on Vacuum Ultraviolet Radiation Physics

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Publisher : Elsevier
ISBN 13 : 0444597190
Total Pages : 590 pages
Book Rating : 4.4/5 (445 download)

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Book Synopsis Proceedings of the 11th International Conference on Vacuum Ultraviolet Radiation Physics by : T. Miyahara

Download or read book Proceedings of the 11th International Conference on Vacuum Ultraviolet Radiation Physics written by T. Miyahara and published by Elsevier. This book was released on 2012-12-02 with total page 590 pages. Available in PDF, EPUB and Kindle. Book excerpt: These volumes contain 365 of the 505 papers presented at the VUV-11 Conference, held at Rikkyo University, Tokyo, from August 27th to September 1st 1995. The papers are divided into three sections: atomic and molecular spectroscopy, solid state spectroscopy and instrumentation and technological applications. New aspects presented were both quantitative and qualitative improvements in fluorescence spectroscopy and magnetic circular dichroism measurements. The fluorescence data are complementary to those of photoemission in a sense but they appear to open up a new method to analyze the optical excitation and relaxation processes. The application of magnetic circular dichroism has proved to be useful not only in analyzing the electronic structures of magnetic materials but also in practical applications to material engineering as found in experiments combined with photoelectron microscopy. Excellent developments in applications are only found in the field of surface photochemistry, where the technique of etching using VUV light has been appreciably refined. Although the majority of distinctive scientific features in the VUV-11 Conference have been brought about by the application of synchrotron radiation, experiments using a different type of light source appear to have progressed steadily. This is evident in the studies of plasma radiation.