Read Books Online and Download eBooks, EPub, PDF, Mobi, Kindle, Text Full Free.
Platform For Monolithic Integration Of Iii V Devices With Si Cmos Technology
Download Platform For Monolithic Integration Of Iii V Devices With Si Cmos Technology full books in PDF, epub, and Kindle. Read online Platform For Monolithic Integration Of Iii V Devices With Si Cmos Technology ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Book Synopsis Platform for Monolithic Integration of III-V Devices with Si CMOS Technology by : Nan Yang Pacella
Download or read book Platform for Monolithic Integration of III-V Devices with Si CMOS Technology written by Nan Yang Pacella and published by . This book was released on 2012 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt: Monolithic integration of III-V compound semiconductors and Si complementary metal-oxide- semiconductor (CMOS) enables the creation of advanced circuits with new functionalities. In order to merge the two technologies, compatible substrate platforms and processing approaches must be developed. The Silicon on Lattice Engineered Silicon (SOLES) substrate allows monolithic integration. It is a Si substrate with embedded III-V template layer, which supports epitaxial IIIV device growth, consistent with present II-V technology. The structure is capped with a silicon-on-insulator (SOI) layer, which enables processing of CMOS devices. The processes required for fabricating and utilizing SOLES wafers which have Ge or InP as the III-V template layers are explored. Allowable thermal budgets are important to consider because the substrate must withstand the thermal budget of all subsequent device processing steps. The maximum processing temperature of Ge SOLES is found to be limited by its melting point. However, Ge diffuses through the buried Si0 2 and must be contained. Solutions include 1) limiting device processing thermal budgets, 2) improving buried silicon dioxide quality and 3) incorporating a silicon nitride diffusion barrier. InP SOLES substrates are created using wafer bonding and layer transfer of silicon, SOI and InP-on-Si wafers, established using a two-step growth method. Two different InP SOLES structures are demonstrated and their allowable thermal budgets are investigated. The thermal budgets appear to be limited by low quality silicon dioxide used for wafer bonding. For ultimate integration, parallel metallization of the III-V and CMOS devices is sought. A method of making ohmic contact to III-V materials through Si encapsulation layers, using Si CMOS technology, is established. The metallurgies and electrical characteristics of nickel silicide structures on Si/III-V films are investigated and the NiSi/Si/III-V structure is found to be optimal. This structure is composed of a standard NiSi/Si interface and novel Si/III-V interface. Specific contact resistivity of the double hetero-interface stack can be tuned by controlling Si/IIIV band alignments at the epitaxial growth interface. P-type Si/GaAs interfaces and n-type Si/InGaAs interfaces create ohmic contacts with the lowest specific contact resistivity and present viable structures for integration. A Si-encapsulated GaAs/AlGaAs laser with NiSi front-side contact is demonstrated and confirms the feasibility of these contact structures.
Book Synopsis Substrate Engineering for Monolithic Integration of III-V Semiconductors with Si CMOS Technology by : Carl Lawrence Dohrman
Download or read book Substrate Engineering for Monolithic Integration of III-V Semiconductors with Si CMOS Technology written by Carl Lawrence Dohrman and published by . This book was released on 2008 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt: (cont.) Adaptation of standard GaAs on Ge processes to this heteroepitaxial system resulted in mostly non-planar growth (similar to typical GaP growth on Si) with only limited regions of planar GaAsyP1-y layers on Si0.2Ge0.8 virtual substrates. Planar growth of GaAsyP1-y on Si0.3Ge0.7 virtual substrates was enabled by minimizing the atmospheric exposure of the Si0.3Ge0.7 as it is transferred between growth reactors, establishing that the GaAsyP1-y growth process on Si1-xGex is strongly affected by atmospheric contaminants. Further minimization of air exposure, through use of Si1-xGex homoepitaxial buffers and growth of Si1-xGex and GaAsyP1-y in a single reactor, is expected to further improve epitaxial quality across the entire lattice-matched GaAsyP1-y/Si1-xGex range, including GaP on Si.
Book Synopsis Integrated Interconnect Technologies for 3D Nanoelectronic Systems by : Muhannad S. Bakir
Download or read book Integrated Interconnect Technologies for 3D Nanoelectronic Systems written by Muhannad S. Bakir and published by Artech House. This book was released on 2008-11-30 with total page 551 pages. Available in PDF, EPUB and Kindle. Book excerpt: This cutting-edge book on off-chip technologies puts the hottest breakthroughs in high-density compliant electrical interconnects, nanophotonics, and microfluidics at your fingertips, integrating the full range of mathematics, physics, and technology issues together in a single comprehensive source. You get full details on state-of-the-art I/O interconnects and packaging, including mechanically compliant I/O approaches, fabrication, and assembly, followed by the latest advances and applications in power delivery design, analysis, and modeling. The book explores interconnect structures, materials, and packages for achieving high-bandwidth off-chip electrical communication, including optical interconnects and chip-to-chip signaling approaches, and brings you up to speed on CMOS integrated optical devices, 3D integration, wafer stacking technology, and through-wafer interconnects.
Book Synopsis High Mobility Materials for CMOS Applications by : Nadine Collaert
Download or read book High Mobility Materials for CMOS Applications written by Nadine Collaert and published by Woodhead Publishing. This book was released on 2018-06-29 with total page 390 pages. Available in PDF, EPUB and Kindle. Book excerpt: High Mobility Materials for CMOS Applications provides a comprehensive overview of recent developments in the field of (Si)Ge and III-V materials and their integration on Si. The book covers material growth and integration on Si, going all the way from device to circuit design. While the book's focus is on digital applications, a number of chapters also address the use of III-V for RF and analog applications, and in optoelectronics. With CMOS technology moving to the 10nm node and beyond, however, severe concerns with power dissipation and performance are arising, hence the need for this timely work on the advantages and challenges of the technology. - Addresses each of the challenges of utilizing high mobility materials for CMOS applications, presenting possible solutions and the latest innovations - Covers the latest advances in research on heterogeneous integration, gate stack, device design and scalability - Provides a broad overview of the topic, from materials integration to circuits
Book Synopsis Heterogeneous Integration of III-V Semiconductor Compounds on Silicon for Functional Photonic Circuits by : Stanley Cheung
Download or read book Heterogeneous Integration of III-V Semiconductor Compounds on Silicon for Functional Photonic Circuits written by Stanley Cheung and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: There has been extensive research in realizing large-scale integration of silicon (Si) photonics for long-haul communications, high-throughput optical interconnects, and future high performance computing (HPC). The impetus for this research lies in the fact that the silicon-on-insulator (SOI) platform is fully compatible with CMOS technology which drives mature IC technology and allows for a convergence with large-scale integrated photonics. Recent advances in key components such as high-contrast, low-loss arrayed waveguide gratings/routers (AWG/AWGR), high speed optical modulators, germanium photo-detectors, and single-wavelength hybrid silicon laser sources have all paved a path towards realizing large chip-scale optical systems with various functionalities. Recently, the energy efficiency of these photonic components in an optical link have drawn strong attention with some projections indicating by 2020, the energy consumption of most components in 100-gigabit-per-second (Gbps) systems will be between a few pico-Joules (pJ) and sub-pJ per bit. Therefore, over the past few years, there has been keen interest in heterogeneous integration of III-V compounds with silicon to realize monolithic integration of efficient hybrid devices. This dissertation pursues the systematic development of passive silicon photonics and III-V InP/InGaAsP photonics to realize III-V/Si heterogeneous integration. Heavy emphasis is placed on optimizing the design and fabrication of the silicon photonics platform for optical routing as well as the III-V platform for optical gain functionality. Along the way, novel devices are developed such as high contrast and high resolution arrayed waveguide gratings (AWG) for optical mux/demux, continuous wave (CW) laser sources, and low repetition rate mode-locked lasers for on-chip frequency combs. In the end, this work culminates in the fabrication, design, and characterization of a hybrid III-V/Si platform via hydrophilic wafer-bonding that allows for the realization of semiconductor lasers and record efficiency III-V/Si optical amplifiers on a silicon substrate. We discuss the design and demonstration of highly efficient 1.55 [mu]m hybrid III-V/Silicon semiconductor optical amplifiers (SOA). The optimized III-V wafer stack consists of Al(0.10)In(0.71)Ga(0.18)As multiple quantum wells (MQW) and Al(0.48)In(0.52)As electron stop layers to realize SOAs with high wall-plug efficiency (WPE). We present various designs and experimentally determine WPE values for 2 mW and 0.1 mW input power amplification. The 400 [mu]m long flared SOA achieved the highest WPE value of 12.1% for output power > 10mW and the 400 [mu]m long straight SOA achieved the highest WPE value of 7.3% for output power
Book Synopsis Graphene and Emerging Materials for Post-CMOS Applications by : Yaw Obeng
Download or read book Graphene and Emerging Materials for Post-CMOS Applications written by Yaw Obeng and published by The Electrochemical Society. This book was released on 2009-05 with total page 421 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objectives of this symposium was to address all current and future issues related to ¿Emerging Materials For Post-CMOS Applications.¿ The symposium focused on fundamental material science, characterization and applications of emerging materials designed for alternatives technologies to replace CMOS. Special emphasis was placed on ¿Beyond CMOS¿ integration schemes, technology development and on the impact of non-traditional materials into nanoelectronics.
Book Synopsis III-V Compound Semiconductors by : Tingkai Li
Download or read book III-V Compound Semiconductors written by Tingkai Li and published by CRC Press. This book was released on 2016-04-19 with total page 588 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more
Book Synopsis ISTFA 2019: Proceedings of the 45th International Symposium for Testing and Failure Analysis by :
Download or read book ISTFA 2019: Proceedings of the 45th International Symposium for Testing and Failure Analysis written by and published by ASM International. This book was released on 2019-12-01 with total page 540 pages. Available in PDF, EPUB and Kindle. Book excerpt: The theme for the 2019 conference is Novel Computing Architectures. Papers will include discussions on the advent of Artificial Intelligence and the promise of quantum computing that are driving disruptive computing architectures; Neuromorphic chip designs on one hand, and Quantum Bits on the other, still in R&D, will introduce new computing circuitry and memory elements, novel materials, and different test methodologies. These novel computing architectures will require further innovation which is best achieved through a collaborative Failure Analysis community composed of chip manufacturers, tool vendors, and universities.
Book Synopsis 'Junction-Level' Heterogeneous Integration of III-V Materials with Si CMOS for Novel Asymmetric Field-Effect Transistors by : Yoon Jung Chang
Download or read book 'Junction-Level' Heterogeneous Integration of III-V Materials with Si CMOS for Novel Asymmetric Field-Effect Transistors written by Yoon Jung Chang and published by . This book was released on 2016 with total page 173 pages. Available in PDF, EPUB and Kindle. Book excerpt: Driven by Moore's law, semiconductor chips have become faster, denser and cheaper through aggressive dimension scaling. The continued scaling not only led to dramatic performance improvements in digital logic applications but also in mixed-mode and/or communication applications. Moreover, size/weight/power (SWAP) restrictions on all high-performance system components have resulted in multi-functional integration of multiple integrated circuits (ICs)/dies in 3D packages/ICs by various system-level approaches. However, these approaches still possess shortcomings and in order to truly benefit from the most advanced digital technologies, the future high-speed/high power devices for communication applications need to be fully integrated into a single CMOS chip. Due to limitations in Si device performance in high-frequency/power applications as well as expensive III-V compound semiconductor devices with low integration density, heterogeneous integration of compound semiconductor materials/devices with Si CMOS platform has emerged as a viable solution to low-cost high-performance ICs. In this study, we first discuss on channel and drain engineering approaches in the state-of-the-art multiple-gate field-effect transistor to integrate III-V compound semiconductor materials with Si CMOS for improved device performance in mixed-mode and/or communication applications. Then, growth, characterization and electrical analysis on small-area (diameter
Download or read book SiGe and Ge written by David Louis Harame and published by The Electrochemical Society. This book was released on 2006 with total page 1280 pages. Available in PDF, EPUB and Kindle. Book excerpt: The second International SiGe & Ge: Materials, Processing, and Devices Symposium was part of the 2006 ECS conference held in Cancun, Mexico from October 29-Nov 3, 2006. This meeting provided a forum for reviewing and discussing all materials and device related aspects of SiGe & Ge. The hardcover edition includes a bonus CD-ROM containing the PDF of the entire issue.
Book Synopsis Silicon Compatible Materials, and Technologies for Advanced Integrated Processes, Circuits and Emerging Applications 5 by : F. Roozeboom
Download or read book Silicon Compatible Materials, and Technologies for Advanced Integrated Processes, Circuits and Emerging Applications 5 written by F. Roozeboom and published by The Electrochemical Society. This book was released on 2015 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Development of Monolithic CMOS-compatible Visible Light Emitting Diode Arrays on Silicon by : Kamesh Chilukuri
Download or read book Development of Monolithic CMOS-compatible Visible Light Emitting Diode Arrays on Silicon written by Kamesh Chilukuri and published by . This book was released on 2006 with total page 103 pages. Available in PDF, EPUB and Kindle. Book excerpt: The synergies associated with integrating Si-based CMOS ICs and III-V-material-based light-emitting devices are very exciting and such integration has been an active area of research and development for quite some time now. SiGe virtual substrate technology presents one way to integrate these materials. A more practical approach to monolithic integration based on the SiGe virtual substrate technology was followed in this work which involves wafer bonding and hydrogen-induced exfoliation to transfer a thin layer of device-quality silicon on top of the SiGe graded buffers to produce Silicon on Lattice Engineered Substrate (SOLES). SOLES wafers are suitable for the practical fabrication of SOI CMOS circuits and III-V-based photonic devices on a common silicon substrate. A novel monolithic CMOS compatible AlGaInP visible LED array on the SOLES platform was developed, fabricated and demonstrated in this work. The prototype array is an important breakthrough in the realization of the ultimate objective - monolithically integrated optical interconnects in high speed digital systems.
Book Synopsis ULSI Process Integration 6 by : C. Claeys
Download or read book ULSI Process Integration 6 written by C. Claeys and published by The Electrochemical Society. This book was released on 2009-09 with total page 547 pages. Available in PDF, EPUB and Kindle. Book excerpt: ULSI Process Integration 6 covers all aspects of process integration. Sections are devoted to 1) Device Technologies, 2) Front-end-of-line integration (gate stacks, shallow junctions, dry etching, etc.), 3) Back-end-of-line integration (CMP, low-k, Cu interconnect, air-gaps, 3D packaging, etc.), 4) Alternative channel technologies (Ge, III-V, hybrid integration), and 5) Emerging technologies (CNT, graphene, polymer electronics, nanotubes).
Book Synopsis Silicon Photonics IV by : David J. Lockwood
Download or read book Silicon Photonics IV written by David J. Lockwood and published by Springer Nature. This book was released on 2021-06-08 with total page 512 pages. Available in PDF, EPUB and Kindle. Book excerpt: This fourth book in the series Silicon Photonics gathers together reviews of recent advances in the field of silicon photonics that go beyond already established and applied concepts in this technology. The field of research and development in silicon photonics has moved beyond improvements of integrated circuits fabricated with complementary metal–oxide–semiconductor (CMOS) technology to applications in engineering, physics, chemistry, materials science, biology, and medicine. The chapters provided in this book by experts in their fields thus cover not only new research into the highly desired goal of light production in Group IV materials, but also new measurement regimes and novel technologies, particularly in information processing and telecommunication. The book is suited for graduate students, established scientists, and research engineers who want to update their knowledge in these new topics.
Book Synopsis Silicon Photonics for Telecommunications and Biomedicine by : Sasan Fathpour
Download or read book Silicon Photonics for Telecommunications and Biomedicine written by Sasan Fathpour and published by CRC Press. This book was released on 2016-04-19 with total page 436 pages. Available in PDF, EPUB and Kindle. Book excerpt: Given silicon's versatile material properties, use of low-cost silicon photonics continues to move beyond light-speed data transmission through fiber-optic cables and computer chips. Its application has also evolved from the device to the integrated-system level. A timely overview of this impressive growth, Silicon Photonics for Telecommunications
Book Synopsis Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gösele by : C. Colinge
Download or read book Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gösele written by C. Colinge and published by The Electrochemical Society. This book was released on 2010-10 with total page 656 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor wafer bonding continues to evolve as a crucial technology extending new integration schemes and disseminating new product architectures in such diverse areas as high quality silicon-on-insulator (SOI) materials for electronic applications, Si-Ge strained layers, Germanium-on-Insulator (GeOI), 3D device integration, Si on quartz or glass for thin film displays, compound semiconductor-on-Si heterostructures and Micro-Electro-Mechanical Systems.
Book Synopsis SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices by : David Harame
Download or read book SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices written by David Harame and published by The Electrochemical Society. This book was released on 2008 with total page 1136 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds have become a key component of the arsenal in improving semiconductor performance. This issue of ECS Transactions discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.
