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Photoluminescence Studies Of Processing Induced Defects In Indium Phosphide And Gallium Arsenide
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Book Synopsis Photoluminescence studies of processing-induced defects in indium phosphide and gallium arsenide by : Tae Seung Kim
Download or read book Photoluminescence studies of processing-induced defects in indium phosphide and gallium arsenide written by Tae Seung Kim and published by . This book was released on 1987 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis PHOTOLUMINESCENCE STUDIES OF THE NITROGEN ISOELECTRONIC TRAP IN GALLIUM ARSENIDE PHOSPHIDE AND INDIUM GALLIUM PHOSPHIDE by :
Download or read book PHOTOLUMINESCENCE STUDIES OF THE NITROGEN ISOELECTRONIC TRAP IN GALLIUM ARSENIDE PHOSPHIDE AND INDIUM GALLIUM PHOSPHIDE written by and published by . This book was released on 1973 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis American Doctoral Dissertations by :
Download or read book American Doctoral Dissertations written by and published by . This book was released on 1987 with total page 532 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Low Temperature Photoluminescence Characterization of High Purity Gallium Arsenide and Indium Phosphide by : Brian John Skromme
Download or read book Low Temperature Photoluminescence Characterization of High Purity Gallium Arsenide and Indium Phosphide written by Brian John Skromme and published by . This book was released on 1985 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis International Conference on Indium Phosphide and Related Materials by :
Download or read book International Conference on Indium Phosphide and Related Materials written by and published by . This book was released on 1994 with total page 752 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1991 with total page 1460 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Book Synopsis Index to American Doctoral Dissertations by :
Download or read book Index to American Doctoral Dissertations written by and published by . This book was released on 1989 with total page 1252 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Low Temperature Magneto-photoluminescence Characterization of High Purity Gallium Arsenide and Indium Phosphide by : Babya Sachi Bose
Download or read book Low Temperature Magneto-photoluminescence Characterization of High Purity Gallium Arsenide and Indium Phosphide written by Babya Sachi Bose and published by . This book was released on 1989 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low-temperature magneto-photoluminescence is a very powerful technique to characterize high purity GaAs and InP grown by various epitaxial techniques. These III-V compound semiconductor materials are used in a wide variety of electronic, optoelectronic and microwave devices. The large binding energy differences of acceptors in GaAs and InP make possible the identification of those impurities by low-temperature photoluminescence without the use of any magnetic field. However, the sensitivity and resolution provided by this technique remains inadequate to resolve the minute binding energy differences of donors in GaAs and InP. To achieve higher sensitivity and resolution needed for the identification of donors, a magneto-photoluminescence system is installed along with a tunable dye laser, which provides resonant excitation. Donors in high purity GaAs are identified from the magnetic splittings of "two-electron" satellites of donor bound exciton transitions in a high magnetic field and at liquid helium temperature. This technique is successfully used to identify donors in n-type GaAs as well as in p-type GaAs in which donors cannot be identified by any other technique. The technique is also employed to identify donors in high purity InP. The amphoteric incorporation of Si and Ge impurities as donors and acceptors in (100), (311)A and (311)B GaAs grown by molecular beam epitaxy is studied spectroscopically. The hydrogen passivation of C acceptors in high purity GaAs grown by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) is investigated using photoluminescence. Si acceptors in MBE GaAs are also found to be passivated by hydrogenation. The instabilities in the passivation of acceptor impurities are observed for the exposure of those samples to light. Very high purity MOCVD InP samples with extremely high mobility are characterized by both electrical and optical techniques. It is determined that C is not typically incorporated as a residual acceptor in high purity MOCVD InP. Finally, GaAs on Si, single quantum well, and multiple quantum well heterostructures, which are fabricated from III-V semiconductors, are also measured by low-temperature photoluminescence.
Book Synopsis Photoluminescence Studies of 100-and 111-grown Indium Gallium Arsenide Strained Single Quantum Wells Under Hydrostatic Pressure by : Toni D. Sauncy
Download or read book Photoluminescence Studies of 100-and 111-grown Indium Gallium Arsenide Strained Single Quantum Wells Under Hydrostatic Pressure written by Toni D. Sauncy and published by . This book was released on 1998 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Photoluminescence studies in indium phosphide by : Steven David Lester
Download or read book Photoluminescence studies in indium phosphide written by Steven David Lester and published by . This book was released on 1987 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Analytical Techniques for the Characterization of Compound Semiconductors by : G. Bastard
Download or read book Analytical Techniques for the Characterization of Compound Semiconductors written by G. Bastard and published by Elsevier. This book was released on 1991-07-26 with total page 554 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is a collection of 96 papers presented at the above Conference. The scope of the work includes optical and electrical methods as well as techniques for structural and compositional characterization. The contributed papers report on topics such as X-ray diffraction, TEM, depth profiling, photoluminescence, Raman scattering and various electrical methods. Of particular interest are combinations of different techniques providing complementary information. The compound semiconductors reviewed belong mainly to the III-V and III-VI families. The papers in this volume will provide a useful reference on the implications of new technologies in the characterization of compound semiconductors.
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1973 with total page 672 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Engineering Index Annual written by and published by . This book was released on 1992 with total page 2264 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its creation in 1884, Engineering Index has covered virtually every major engineering innovation from around the world. It serves as the historical record of virtually every major engineering innovation of the 20th century. Recent content is a vital resource for current awareness, new production information, technological forecasting and competitive intelligence. The world?s most comprehensive interdisciplinary engineering database, Engineering Index contains over 10.7 million records. Each year, over 500,000 new abstracts are added from over 5,000 scholarly journals, trade magazines, and conference proceedings. Coverage spans over 175 engineering disciplines from over 80 countries. Updated weekly.
Book Synopsis Growth of Crystals by : E.I. Givargizov
Download or read book Growth of Crystals written by E.I. Givargizov and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 213 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume, as the previous ones, consists primarily of review artic1es. However, it also contains a large quantity of original material on the growth of crystals and films. Priority is given to experimental work. Only two artic1es are concerned exc1usively with the theory of crystal growth. Theoretical aspects are treated in several others. This volume is divided into three parts. Part I, "Epitaxy and Transformations in Thin Films," stems from the current broad application of lasers and optical effects in general to crystal growth (in particular, the growth of thin films). The first three artic1es of the book are devoted to this topic. In particular, the laser pulse vaporization method, for which a comparatively slow deposition rate is typical (which should not always be viewed as a drawback), is distinguished by the unique kinetics of the initial growth stages. These are not entirely explained. However, this method is completely suitable for oriented or generally ordered growth of films under otherwise equal conditions. Another artic1e of this section is based on use of ultrashort (down to picosecond) laser pulses. It emphasizes the nonequilibrium processes of crystallization and decrystallization that are characteristic for such influences. In particular, material heated above its melting point and metastable states in the semiconductor melt exhibit these qualities.
Book Synopsis Photoluminescence and Depth Profiling Studies in Gallium Arsenide Phosphide by : Tan-hua Yu
Download or read book Photoluminescence and Depth Profiling Studies in Gallium Arsenide Phosphide written by Tan-hua Yu and published by . This book was released on 1980 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Study of Nonlinear Optical Properties of Indium Arsenide/gallium Arsenide and Indium Gallium Arsenide/gallium Arsenide Self-assembled Quantum Dots by : Syed Hassan Shah
Download or read book Study of Nonlinear Optical Properties of Indium Arsenide/gallium Arsenide and Indium Gallium Arsenide/gallium Arsenide Self-assembled Quantum Dots written by Syed Hassan Shah and published by ProQuest. This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Comprehensive Semiconductor Science and Technology by :
Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
