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Photo Assisted Epitaxial Growth For Iii V Semiconductors
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Book Synopsis Photo-Assisted Epitaxial Growth for III-V Semiconductors by :
Download or read book Photo-Assisted Epitaxial Growth for III-V Semiconductors written by and published by . This book was released on 1993 with total page 58 pages. Available in PDF, EPUB and Kindle. Book excerpt: Photo-assisted metalorganic molecular beam epitaxy (MOMBE), with an argon ion laser, has been used to grow GaAs. The substrate temperature was calibrated by an infrared laser interferometric technique with an accuracy of + or - 3 deg C. The MOMBE growth of GaAs, InAs, and InGaAs was first studied, by monitoring intensity oscillations of reflection high-energy electron diffraction (RHEED). The actual arsenic incorporation rate was deduced from As-induced RHEED oscillations, and a unity V/III incorporation ratio could be obtained. In growing InGaAs, indium segregation suppresses the InGaAs growth rate. In laser- assisted MOMBE the enhancement of arsenic desorption with laser irradiation and its effects were observed. The decomposition of triethylgallium and desorption of arsenic compete with each other, resulting in a saturation in the enhanced growth rate in the arsenic-controlled growth regime. The initial growth behavior was also studied by inspecting the details of the RHEED behavior and arsenic surface coverage ... Molecular beam epitaxy, Photo-assisted, Metal-organics gallium arsenide, Indium arsenide, Argon ion laser.
Book Synopsis Photo-Assisted Epitaxial Growth for III-V Semiconductors. Selective Area Epitaxy by :
Download or read book Photo-Assisted Epitaxial Growth for III-V Semiconductors. Selective Area Epitaxy written by and published by . This book was released on 1995 with total page 193 pages. Available in PDF, EPUB and Kindle. Book excerpt: We have investigated laser-enhanced growth of GaAs by metal-organic molecular beam epitaxy (MOMBE) with triethylgallium (TEGa) and solid arsenic and by chemical beam epitaxy (CBE) with TEGa and a safer, alternative organometallic precursor, tris dimethylaminoarsenic (TDMAAs), to the highly toxic arsine. We discovered that with TDMAAs we can increase the laser-enhanced growth temperature window by 100 deg C, as compared to that with arsine or arsenic. CBE growth of InP and InGaP using tris- dimethylaminophosphorus (TDMAP) and tertiarybutylphosphine (TBP) is also reported. We discovered the etching effect of TDMAAs and TDMAP, and investigated laser-enhanced etching of GaAs by TDMAAs. We also investigated laser-enhanced carbon and silicon doping in GaAs with diiodomethane (CI2H2) and disilane, respectively. We can achieve a two-order-of-magnitude enhancement in p-type carbon doping with CI2H2 by laser irradiation. Finally, we report on lateral bandgap variation by laser-modified compositional change in InGaAs/GaAs multiple quantum wells grown by MOMBE and CBE. jg p.3.
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 836 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Liquid-Phase Epitaxial Growth of III-V Compound Semiconductor Materials and Their Device Applications, by : M. G. Astles
Download or read book Liquid-Phase Epitaxial Growth of III-V Compound Semiconductor Materials and Their Device Applications, written by M. G. Astles and published by CRC Press. This book was released on 1990 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: An introduction to the basic principles of the technique of liquid-phase epitaxy (LPE) as applied to the growth of the III-V family of compounds.
Book Synopsis Epitaxial Growth and Characterization of Narrow Bandgap III-V Semiconductors and Related Semimetals by : Sukgeun Choi
Download or read book Epitaxial Growth and Characterization of Narrow Bandgap III-V Semiconductors and Related Semimetals written by Sukgeun Choi and published by . This book was released on 2006 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Proceedings of the Symposium on III-V Opto-Electronics Epitaxy and Device Related Processes by : V. G. Keramidas
Download or read book Proceedings of the Symposium on III-V Opto-Electronics Epitaxy and Device Related Processes written by V. G. Keramidas and published by . This book was released on 1983 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Low Temperature Epitaxial Growth of Semiconductors by : Takashi Hariu
Download or read book Low Temperature Epitaxial Growth of Semiconductors written by Takashi Hariu and published by World Scientific. This book was released on 1991 with total page 356 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low temperature processes for semiconductors have been recently under intensive development to fabricate controlled device structures with minute dimensions in order to achieve the highest device performance and new device functions as well as high integration density. Comprising reviews by experts long involved in the respective pioneering work, this volume makes a useful contribution toward maturing the process of low temperature epitaxy as a whole.
Book Synopsis Laser Microfabrication by : Daniel J. Ehrlich
Download or read book Laser Microfabrication written by Daniel J. Ehrlich and published by Elsevier. This book was released on 1989-06-21 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reviews the solid core of fundamental scientific knowledge on laser-stimulated surface chemistry that has accumulated over the past few years. It provides a useful overview for the student and interested non-expert as well as essential reference data (photodissociation cross sections, thermochemical constants, etc.) for the active researcher.
Book Synopsis Surface Processing and Laser Assisted Chemistry by : E. Fogarassy
Download or read book Surface Processing and Laser Assisted Chemistry written by E. Fogarassy and published by Elsevier. This book was released on 1990-12-01 with total page 495 pages. Available in PDF, EPUB and Kindle. Book excerpt: The papers in this volume cover all aspects of laser assisted surface processing ranging from the preparation of high-Tc superconducting layer structures to industrial laser applications for device fabrication. The topics presented give recent results in organometallic chemistry and laser photochemistry, and novel surface characterization techniques. The ability to control the surface morphology by digital deposition and etching shows one of the future directions for exciting applications of laser surface processing, some of which may apply UV and VUV excitation. The understanding of elementary proceses is essential for the design of novel deposition methods, with diamond CVD being an outstanding example. The high quality of these contributions once again demonstrates that the E-MRS is an efficient forum for interaction between research workers and industry.
Book Synopsis Heteroepitaxy of Semiconductors by : John E. Ayers
Download or read book Heteroepitaxy of Semiconductors written by John E. Ayers and published by CRC Press. This book was released on 2016-10-03 with total page 660 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.
Book Synopsis Metal Organic Vapour Phase Epitaxy for the Growth of III-V Semiconductor Structures by : Maarten Reinier Leys
Download or read book Metal Organic Vapour Phase Epitaxy for the Growth of III-V Semiconductor Structures written by Maarten Reinier Leys and published by . This book was released on 1990 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis CVD of Compound Semiconductors by : Anthony C. Jones
Download or read book CVD of Compound Semiconductors written by Anthony C. Jones and published by John Wiley & Sons. This book was released on 2008-11-20 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chemical growth methods of electronic materials are the keystone of microelectronic device processing. This book discusses the applications of metalorganic chemistry for the vapor phase deposition of compound semiconductors. Vapor phase methods used for semiconductor deposition and the materials properties that make the organometallic precursors useful in the electronics industry are discussed for a variety of materials. Topics included: * techniques for compound semiconductor growth * metalorganic precursors for III-V MOVPE * metalorganic precursors for II-VI MOVPE * single-source precursors * chemical beam epitaxy * atomic layer epitaxy Several useful appendixes and a critically selected, up-to-date list of references round off this practical handbook for materials scientists, solid-state and organometallic chemists, and engineers.
Book Synopsis Epitaxial Growth, Processing and Characterisation of III-V Semiconductor Micro- and Nanostructures by : Otto Zsebök
Download or read book Epitaxial Growth, Processing and Characterisation of III-V Semiconductor Micro- and Nanostructures written by Otto Zsebök and published by . This book was released on 1997 with total page 46 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Epitaxial Vapor Growth of III-V Compounds by : Stanford University. Stanford Electronics Laboratories
Download or read book Epitaxial Vapor Growth of III-V Compounds written by Stanford University. Stanford Electronics Laboratories and published by . This book was released on 1963 with total page 64 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work describes an open-tube method for epitaxial growth of III-V compounds using heterogeneous, gas-solid chemical reactions. Different techniques and reactions are briefly discussed and a simplified model is exposed to a thermodynamic treatment to clarify how different parameters influence the growth process. The experimental apparatus and procedure are outlined and data are given for the growth of the two compound semiconductors, GaAs and GaP, as well as for the ternary GaAs(x)P(1-x) mixtures. Also mentioned is the fabrication of heterojunctions, the possibilities of doping, and closed-tube growth processes. (Author).
Book Synopsis Physics Of Semiconductors, The - Proceedings Of The Xxi International Conference (In 2 Volumes) by : Ping Jiang
Download or read book Physics Of Semiconductors, The - Proceedings Of The Xxi International Conference (In 2 Volumes) written by Ping Jiang and published by World Scientific. This book was released on 1993-03-31 with total page 2151 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 21st conference proceedings continue the tradition of the ICPS series. The proceedings cover all aspects of semiconductor physics, including those related to materials, processing and devices. Plenary and invited speakers address areas of major interest.
Book Synopsis Handbook of Crystal Growth by : Tom Kuech
Download or read book Handbook of Crystal Growth written by Tom Kuech and published by Elsevier. This book was released on 2014-11-02 with total page 1384 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume IIIA Basic Techniques Handbook of Crystal Growth, Second Edition Volume IIIA (Basic Techniques), edited by chemical and biological engineering expert Thomas F. Kuech, presents the underpinning science and technology associated with epitaxial growth as well as highlighting many of the chief and burgeoning areas for epitaxial growth. Volume IIIA focuses on major growth techniques which are used both in the scientific investigation of crystal growth processes and commercial development of advanced epitaxial structures. Techniques based on vacuum deposition, vapor phase epitaxy, and liquid and solid phase epitaxy are presented along with new techniques for the development of three-dimensional nano-and micro-structures. Volume IIIB Materials, Processes, and Technology Handbook of Crystal Growth, Second Edition Volume IIIB (Materials, Processes, and Technology), edited by chemical and biological engineering expert Thomas F. Kuech, describes both specific techniques for epitaxial growth as well as an array of materials-specific growth processes. The volume begins by presenting variations on epitaxial growth process where the kinetic processes are used to develop new types of materials at low temperatures. Optical and physical characterizations of epitaxial films are discussed for both in situ and exit to characterization of epitaxial materials. The remainder of the volume presents both the epitaxial growth processes associated with key technology materials as well as unique structures such as monolayer and two dimensional materials. Volume IIIA Basic Techniques Provides an introduction to the chief epitaxial growth processes and the underpinning scientific concepts used to understand and develop new processes. Presents new techniques and technologies for the development of three-dimensional structures such as quantum dots, nano-wires, rods and patterned growth Introduces and utilizes basic concepts of thermodynamics, transport, and a wide cross-section of kinetic processes which form the atomic level text of growth process Volume IIIB Materials, Processes, and Technology Describes atomic level epitaxial deposition and other low temperature growth techniques Presents both the development of thermal and lattice mismatched streams as the techniques used to characterize the structural properties of these materials Presents in-depth discussion of the epitaxial growth techniques associated with silicone silicone-based materials, compound semiconductors, semiconducting nitrides, and refractory materials
Book Synopsis Surface Studies on the Preparation and Aging of III-V Semiconductors and Their Relationship with Epitaxial Growth by : Ruth Anna Palmer
Download or read book Surface Studies on the Preparation and Aging of III-V Semiconductors and Their Relationship with Epitaxial Growth written by Ruth Anna Palmer and published by . This book was released on 2001 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt:
