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Optical Properties Of Nitrogen Doped Gallium Arsenide Under Pressure
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Book Synopsis Optical Properties of Nitrogen Doped Gallium Arsenide Under Pressure by : Eric Albert Stinaff
Download or read book Optical Properties of Nitrogen Doped Gallium Arsenide Under Pressure written by Eric Albert Stinaff and published by . This book was released on 2002 with total page 318 pages. Available in PDF, EPUB and Kindle. Book excerpt: We present new insights into the problem of the isoelectronic nitrogen (N) impurity in gallium arsenide (GaAs). By performing photoluminescence (PL), photoluminescence excitation (PLE), transmission, and time decay measurements through a broad range of pressures, we were able to positively identify and track previously unseen states arising from the N impurity. The first observation we make is of a dramatic increase in luminescence as N forms an isolated state within the gap around 22kbar. We attribute this effect to N acting as a nonradiative trapping center while still resonant with the conduction band states. We also note the appearance, above 22kbar, of a broad band-to-acceptor like emission below the band edge, which we associate with a band to N acceptor transition. The next major observation we report is of the excited state of the N[Subscript x] exciton. We find this state to be clearly identifiable for the pressure range [Difference symbol]25kbar to [Difference symbol]30kbar, and is weak in PL, but shows enormous absorption signals in PLE and transmission. The spacing of this level from N[Subscript x]-B is in good agreement with the established theory of shallow acceptor levels. We then move on to the identification of a second bound state associated with N. This state, designated N[Subscript Gamma symbol], was previously reported for the GaP system and the GaAs[Subscript l-x]P[Subscript x] alloy, but has not, until now, been positively identified in GaAs. We find the state to be degenerate with the shallow donor level for pressures up to [Difference symbol]30kbar. The emission from this state is found to possess unique N characteristics and is seen to move in pressure with both shallow and deep like properties. We conclude with a discussion of the process of lasing in N doped GaAs. We present data consistent with previous studies of the lasing process in GaAs. However, we find an intriguing trend with pressure as we approach the [Gamma]-X crossover. The lasing gain begins to shift in a manner similar to N[Subscript Gamma]. In fact, N[Subscript Gamma] appears to act as an upper bound on the laser emission. We believe this to be preliminary evidence of the influence of N on the lasing mechanism.
Book Synopsis Gallium Arsenide and Related Compounds 1992, Proceedings of the 19th INT Symposium, 28 September-2 October 1992, Karuizawa, Japan by : Ikegami
Download or read book Gallium Arsenide and Related Compounds 1992, Proceedings of the 19th INT Symposium, 28 September-2 October 1992, Karuizawa, Japan written by Ikegami and published by CRC Press. This book was released on 1993-01-01 with total page 1002 pages. Available in PDF, EPUB and Kindle. Book excerpt: Bringing together international experts from 16 countries, Gallium Arsenide and Related Compounds 1992 focuses on device applications for Gallium Arsenide and related compounds. A topic of importance discussed is the first GaAs supercomputer from Fujitsu. The book also explores carbon doping and device applications in laser diodes, light modulators, and amplifiers, emphasizing business opportunity in consumer applications such as personal communications and TV tuners. It includes an account of the use of scanning tunneling microscopies in GaAs and related compounds. This book is ideal for physicists, materials scientists, and electronics and electrical engineers involved in III-V compound research.
Book Synopsis LUMINESCENCE, ABSORPTION, AND PRESSURE STUDIES OF NITROGEN-DOPED AND NITROGEN-FREE GALLIUM ARSENIDE PHOSPHIDE AND INDIUM GALLIUM PHOSPHIDE by :
Download or read book LUMINESCENCE, ABSORPTION, AND PRESSURE STUDIES OF NITROGEN-DOPED AND NITROGEN-FREE GALLIUM ARSENIDE PHOSPHIDE AND INDIUM GALLIUM PHOSPHIDE written by and published by . This book was released on 1976 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Optical Properties of Semiconductors by : N. G. Basov
Download or read book Optical Properties of Semiconductors written by N. G. Basov and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 189 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Physics and Applications of Dilute Nitrides by : I. Buyanova
Download or read book Physics and Applications of Dilute Nitrides written by I. Buyanova and published by CRC Press. This book was released on 2004-08-30 with total page 457 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since their development in the 1990s, it has been discovered that diluted nitrides have intriguing properties that are not only distinct from those of conventional semiconductor materials, but also are conducive to various applications in optoelectronics and photonics. The book examines these applications and presents a broad and in-depth look at t
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 548 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Dissertation Abstracts International by :
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2003 with total page 664 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Properties of Gallium Arsenide written by and published by INSPEC. This book was released on 1986 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :John Sydney Blakemore Publisher :Springer Science & Business Media ISBN 13 :9780883185254 Total Pages :422 pages Book Rating :4.1/5 (852 download)
Book Synopsis Gallium Arsenide by : John Sydney Blakemore
Download or read book Gallium Arsenide written by John Sydney Blakemore and published by Springer Science & Business Media. This book was released on 1987 with total page 422 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Effect of Neutron Transmutation Doping on the Optical Properties of Gallium Arsenide by : Guihua Lu
Download or read book Effect of Neutron Transmutation Doping on the Optical Properties of Gallium Arsenide written by Guihua Lu and published by . This book was released on 1988 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1989 with total page 1148 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gallium Arsenide and Related Compounds by :
Download or read book Gallium Arsenide and Related Compounds written by and published by . This book was released on 1992 with total page 1000 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1976 with total page 680 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Optical Properties of EL2 in Neutron Transmutation Doped Gallium Arsenide by : Qing Lu
Download or read book Optical Properties of EL2 in Neutron Transmutation Doped Gallium Arsenide written by Qing Lu and published by . This book was released on 1989 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electroluminescence II written by and published by Academic Press. This book was released on 1999-10-29 with total page 281 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
Download or read book Physics Briefs written by and published by . This book was released on 1993 with total page 1288 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Study of Electronic and Optical Properties of Gallium Arsenide Surfaces and Interfaces by : Marko Mykola Gregory Slusarczuk
Download or read book Study of Electronic and Optical Properties of Gallium Arsenide Surfaces and Interfaces written by Marko Mykola Gregory Slusarczuk and published by . This book was released on 1979 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt:
