On The Perspectives Of Sic Mosfets In High Frequency And High Power Isolated Dc Dc Converters

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On the perspectives of SiC MOSFETs in high-frequency and high-power isolated DC/DC converters

Author : Eial Awwad, Abdullah
Publisher : Universitätsverlag der TU Berlin
ISBN 13 : 3798330964
Total Pages : 184 pages
Book Rating : 4.7/5 (983 download)

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Book Synopsis On the perspectives of SiC MOSFETs in high-frequency and high-power isolated DC/DC converters by : Eial Awwad, Abdullah

Download or read book On the perspectives of SiC MOSFETs in high-frequency and high-power isolated DC/DC converters written by Eial Awwad, Abdullah and published by Universitätsverlag der TU Berlin. This book was released on 2020-08-11 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt: Increasing demand for efficiency and power density pushes Si-based devices to some of their inherent material limits, including those related to temperature operation, switching frequency, and blocking voltage. Recently, SiC-based power devices are promising candidates for high-power and high-frequency switching applications. Today, SiC MOSFETs are commercially available from several manufacturers. Although technology affiliated with SiC MOSFETs is improving rapidly, many challenges remain, and some of them are investigated in this work. The research work in this dissertation is divided into the three following parts. Firstly, the static and switching characteristics of the state-of-the-art 1.2 kV planar and double-trench SiC MOSFETs from two different manufacturers are evaluated. The effects of different biasing voltages, DC link voltages, and temperatures are analysed. The characterisation results show that the devices exhibit superior switching performances under different operating conditions. Moreover, several aspects of using the SiC MOSFET’s body diode in a DC/DC converter are investigated, comparing the body-diodes of planar and double-trench devices. Reverse recovery is evaluated in switching tests considering the case temperature, switching rate, forward current, and applied voltage. Based on the measurement results, the junction temperature is estimated to guarantee safe operation. A simple electro-thermal model is proposed in order to estimate the maximum allowed switching frequency based on the thermal design of the SiC devices. Using these results, hard- and soft-switching converters are designed, and devices are characterised as being in continuous operation at a very high switching frequency of 1 MHz. Thereafter, the SiC MOSFETs are operated in a continuous mode in a 10 kW / 100-250 kHz buck converter, comparing synchronous rectification, the use of the body diode, and the use of an external Schottky diode. Further, the parallel operation of the planar devices is considered. Thus, the paralleling of SiC MOSFETs is investigated before comparing the devices in continuous converter operation. In this regard, the impact of the most common mismatch parameters on the static and dynamic current sharing of the transistors is evaluated, showing that paralleling of SiC MOSFETs is feasible. Subsequently, an analytical model of SiC MOSFETs for switching loss optimisation is proposed. The analytical model exhibits relatively close agreement with measurement results under different test conditions. The proposed model tracks the oscillation effectively during both turn-on and –off transitions. This has been achieved by considering the influence of the most crucial parasitic elements in both power and gate loops. In the second part, a comprehensive short-circuit ruggedness evaluation focusing on different failure modes of the planar and double-trench SiC devices is presented. The effects of different biasing voltages, DC link voltages, and gate resistances are evaluated. Additionally, the temperature-dependence of the short-circuit capability is evaluated, and the associated failure modes are analysed. Subsequently, the design and test of two different methods for overcurrent protection are proposed. The desaturation technique is applied to the SiC MOSFETs and compared to a second method that depends on the stray inductance of the devices. Finally, the benefits of using SiC devices in continuous high-frequency, high-power DC/DC converters is experimentally evaluated. In this regard, a design optimisation of a high-frequency transformer is introduced, and the impact of different core materials, conductor designs, and winding arrangements are evaluated. A ZVZCS Phase-Shift Full-Bridge unidirectional DC/DC converter is proposed, using only the parasitic leakage inductance of the transformer. Experimental results for a 10 kW, (100-250) kHz prototype indicate an efficiency of up to 98.1% for the whole converter. Furthermore, an optimized control method is proposed to minimise the circulation current in the isolated bidirectional dual active bridge DC/DC converter, based on a modified dual-phase-shift control method. This control method is also experimentally compared with traditional single-phase shift control, yielding a significant improvement in efficiency. The experimental results confirm the theoretical analysis and show that the proposed control can enhance the overall converter efficiency and expand the ZVZCS range. Die steigende Nachfrage nach Effizienz und Leistungsdichte bringt Si-basierte eistungsbauteile an einige inhärente Materialgrenzen, die unter anderem mit der Temperaturbelastung, der Schaltfrequenz und der Blockierspannung in Zusammenhang stehen. In jüngster Zeit sind SiC-basierte Leistungsbauelemente vielversprechende Kandidaten für Hochleistungs- und Hochfrequenzanwendungen. Aktuell sind SiC-MOSFETs von mehreren Herstellern im Handel erhältlich. Obwohl sich die Technologie der SiC-MOSFETs rasch verbessert, werden viele Herausforderungen bestehen bleiben. Einige dieser Herausforderungen werden in dieser Arbeit untersucht. Die Untersuchungen in dieser Dissertation gliedern sich in die drei folgenden Teile: Im ersten Teil erfolgt, die statische und die transiente Charakterisierung der aktuellen 1,2 kV Planarund Doubletrench SiC-MOSFETs verschiedener Hersteller. Die Auswirkungen unterschiedlicher Gatespannungen, Zwischenkreisspannungen und Temperaturen werden analysiert. Die Ergebnisse der Charakterisierung zeigen, dass die Bauteile überlegene Schaltleistungen unter verschiedenen Betriebsbedingungen aufweisen. Darüber hinaus wird der Einsatz der internen SiC-Bodydioden in einem DC/DC-Wandler untersucht, wobei die Unterschiede zwischen Planar- und Doppeltrench-Bauteilen aufgezeigt werden. Das Reverse-Recovery-Verhalten wird unter Berücksichtigung der Gehäusetemperatur, der Schaltgeschwindigkeit, des Durchlassstroms und der angelegten Spannung bewertet. Anhand der Messergebnisse wird die Sperrschichttemperatur geschätzt, damit ein sicherer Betrieb gewährleistet ist. Ein einfaches elektrothermisches Modell wird vorgestellt, um die maximal zulässige Schaltfrequenz auf der Grundlage des thermischen Designs der SiC-Bauteile abzuschätzen. Anhand dieser Ergebnisse werden hart- und weichschaltende Umrichter konzipiert und die Bauteile werden im Dauerbetrieb mit einer sehr hohen Schaltfrequenz von 1 MHz untersucht. Danach werden die SiC-MOSFETs im Dauerbetrieb in einem 10 kW / 100-250 kHz-Tiefsetzsteller betrieben. Dabei wird die Synchrongleichrichtung, die Verwendung der internen Diode und die Verwendung einer externen Schottky-Diode verglichen. Außerdem wird die Parallelisierung von SiC-MOSFETs untersucht, bevor die Parallelschaltung der verschiedenen Bauelemente ebenso im kontinuierlichen Konverterbetrieb verglichen wird. Es wird der Einfluss der häufigsten Parametervariationen auf die statische und dynamische Stromaufteilung der Transistoren analysiert, was zeigt, dass eine Parallelisierung von SiC-MOSFETs möglich ist. Anschließend wird ein analytisches Modell der SiC-MOSFETs zur Schaltverlustoptimierung vorgeschlagen. Das analytische Modell zeigt eine relativ enge Übereinstimmung mit den Messergebnissen unter verschiedenen Testbedingungen. Das vorgeschlagene Modell bildet die Schwingungen sowohl beim Ein- als auch beim Ausschalten effektiv nach. Dies wurde durch die Berücksichtigung der wichtigsten parasitären Elemente in Strom- und Gatekreisen erreicht. Im zweiten Teil wird eine umfassende Bewertung der Kurzschlussfestigkeit mit Fokus auf verschiedene Ausfallmodi der planaren und double-trench SiC-Bauelemente vorgestellt. Die Auswirkungen unterschiedlicher Gatespannungen, Zwischenkreisspannungen und Gate-Widerstände werden ausgewertet. Zusätzlich wird die temperaturabhängige Kurzschlussfähigkeit ausgewertet und die zugehörigen Fehlerfälle werden analysiert. Anschließend wird die Auslegung und Prüfung von zwei verschiedenen Verfahren zum Überstromschutz evaluiert. Die „Desaturation“-Technik wird auf SiC-MOSFETs angewendet und mit einer zweiten Methode verglichen, welche die parasitäre Induktivität der Bauelemente nutzt. Schließlich wird der Nutzen des Einsatzes von SiC-Bauteilen in kontinuierlichen Hochfrequenz-Hochleistungs-DC/DC-Wandlern experimentell untersucht. In diesem Zusammenhang wird eine Designoptimierung eines Hochfrequenztransformators vorgestellt und der Einfluss verschiedener Kernmaterialien, Leiterausführungen und Wicklungsanordnungen wird bewertet. Es wird ein unidirektionaler ZVZCS Vollbrücken-DC/DC-Wandler vorgestellt, der nur die parasitäre Streuinduktivität des Transformators verwendet. Experimentelle Ergebnisse für einen 10 kW, (100-250) kHz Prototyp zeigen einenWirkungsgrad von bis zu 98,1% für den gesamten Umrichter. Abschließend wird ein optimiertes Regelverfahren verwendet, welches auf einem modifizierten Dual-Phase-Shift-Regelverfahren basiert, um den Kreisstrom im isolierten bidirektionalen Dual-Aktiv-Brücken-DC/DC-Wandler zu minimieren. Diese Regelmethode wird experimentell mit der herkömmlichen Single-Phase-Shift-Regelung verglichen. Hierbei zeigt sich eine deutliche Effizienzsteigerung durch die neue Regelmethode. Die experimentellen Ergebnisse bestätigen die theoretische Analyse und zeigen, dass die vorgeschlagene Regelung den Gesamtwirkungsgrad des Umrichters erhöhen und den ZVZCS-Bereich erweitern kann.

On the Perspectives of SiC MOSFETs in High-frequency and High-power Isolated DC/DC Converters

Author : Abdullah Eial Awwad
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (11 download)

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Book Synopsis On the Perspectives of SiC MOSFETs in High-frequency and High-power Isolated DC/DC Converters by : Abdullah Eial Awwad

Download or read book On the Perspectives of SiC MOSFETs in High-frequency and High-power Isolated DC/DC Converters written by Abdullah Eial Awwad and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Modeling and control of power converters in weak and unbalanced electric grids

Author : Just, Hendrik
Publisher : Universitätsverlag der TU Berlin
ISBN 13 : 379833207X
Total Pages : 236 pages
Book Rating : 4.7/5 (983 download)

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Book Synopsis Modeling and control of power converters in weak and unbalanced electric grids by : Just, Hendrik

Download or read book Modeling and control of power converters in weak and unbalanced electric grids written by Just, Hendrik and published by Universitätsverlag der TU Berlin. This book was released on 2021-11-25 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt: Grid converters increasingly affect power system operation due to the increasing share of renewable energy sources and less conventional power plants. This shift in power generation leads to converter-dominated weak grids, which show critical stability phenomena but also enable converters to contribute to grid stability and voltage support. This thesis presents critical parts of converter controls and describes models to assess their characteristics. These models are used to derive design criteria and dedicated stability analysis methods for grid converter controls. Der steigende Anteil an erneuerbaren Energien in den Energieversorgungsnetzen führt zur Verdrängung konventioneller Kraftwerke. Diese Entwicklung lässt umrichterdominierte und schwache Netzabschnitte entstehen, die kritischen Stabilitätsmechanismen unterliegen, allerdings auch ermöglichen, dass Umrichter aktiv zur Netzstützung und Netzstabilität beitragen können. Die vorliegende Arbeit beschreibt kritische Regelungskomponenten der Umrichter und deren Modellierung. Auf Basis der Modelle werden Auslegungskriterien für die Regelungen abgeleitet und dedizierte Stabilitätsanalysemethoden präsentiert.

Detection and characterization of Lithium plating

Author : Long, Julian
Publisher : Universitätsverlag der TU Berlin
ISBN 13 : 3798332789
Total Pages : 260 pages
Book Rating : 4.7/5 (983 download)

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Book Synopsis Detection and characterization of Lithium plating by : Long, Julian

Download or read book Detection and characterization of Lithium plating written by Long, Julian and published by Universitätsverlag der TU Berlin. This book was released on 2023-05-31 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lithium plating is not only the most severe ageing mechanism in lithium-ion batteries (LIBs) but also becoming more and more important due the increasing presence of electric vehicles (EVs). In EVs the extreme conditions causing lithium plating, like very high charging currents and low environment temperatures, are much more prevalent than in consumer electronics. Due to the high number of factors that influence the plating process, ranging from the cell geometry to the chemical composition of the electrolyte, a deeper understanding of the plating process is still lacking. Without this knowledge it is hard to design cells in a plating resistant way, or to operate cells under the ideal conditions to minimize plating. This thesis aims at showing different methods to investigate the plating process on three different levels. The first method is on the cell level, investigating the behaviour of the whole cell during plating. It contains the analysis of the voltage and current profiles that show an atypical behaviour during plating. The focus of the analysis is on the current profile of the constant voltage (CV) phase during charging under low temperature conditions leading to plating. This current profile can be fitted with the Johnson-Mehl-Avrami-Kolmogorov (JMAK) function that describes the electrochemical deposition process of a metallic species on a surface. The resulting fitting parameters can be utilized to characterize the plating behaviour of the cell as well as better estimate the amount of plated lithium than commonly used methods. It can also potentially predict the future safety risk due to dendrite formation. In the second part the chemical composition of the surface electrolyte interface (SEI) is investigated using X-ray photoelectron spectroscopy (XPS). The composition as well as the mechanical properties of the SEI are strongly influencing the plating process and preliminary work has shown that plating is also changing the morphology of the SEI and increasing its thickness drastically. Cells under different conditions (plated, charged and discharged) as well as cells of different manufacturers have been probed using XPS. During the measurements an unwanted side effect of the experimental setup was discovered that lead to a migration of lithium to the surface of the sample and was distorting the measurement results. Regardless of the effect, it was possible to see that the SEI can have a very different composition in cells of different manufacturers and that plating not only changes the morphology but also the composition of the SEI. The unwanted side effect could furthermore be utilized to identify samples that were plated recently and could be used in further more controlled experiments to localize lithium depositions on plated samples. In the last part the particle structure of the anode surface of cells of different manufacturers was investigated using a watershed particle detection algorithm on laser scanning microscopy (LSM) images of the anode surfaces. The distributions of the particle sizes have then been compared to the capacity loss in plated cells. It was shown that the capacity loss correlates with parameters extracted from the particle size distributions. It is however necessary to create more data to verify this correlation. In summary this thesis utilized new methods to detect or characterize plating on different levels of magnification, from the cell level to the chemical composition. New approaches were found to predict a cells future plating behaviour, spatially localize plated areas on the anode and design cells in a plating resistant way. Lithium Plating ist nicht nur der Alterungsmechanismus in Lithium-Ionen-Batterien mit dem größten Kapazitätsverlust, sondern wird auch im Zuge der voranschreitenden Elektrifizierung des Personenverkehrs immer wichtiger. In Elektrofahrzeugen finden sich die extremen Zustände, wie niedrige Ladetemperaturen und hohe Ladestrome, unter denen Plating auftritt, deutlich häufiger als in Unterhaltungstechnik. Durch die Vielzahl von Parametern, von der Zellgeometrie bis hin zur Elektrolyzusammensetzung, die Plating beeinflussen, fehlt immer noch ein tieferes Verständnis des Plating-Prozesses. Ohne dieses Wissen ist es schwer, Zellen zu designen, die resistent gegen Plating sind oder Zellen unter optimalen Bedingungen zu betreiben um Plating zu minimieren. Das Ziel dieser Arbeit ist es, verschiedene Methoden aufzuzeigen, die die Untersuchung von Plating auf drei verschiedenen Ebenen ermöglichen. Die erste Methode untersucht das Gesamtverhalten der Zelle auf Zellebene. Hierbei wird das atypische Verhalten der Strom- und Spannunsprofile wahrend des Plating-Vorgangs analysiert. Der Fokus liegt dabei auf der Untersuchung der Konstantstrom-Phase bei niedrigen Temperaturen während der Ladung. Das Stromprofil dieser Phase kann mit der JMAK-Funktion gefittet werden, welche die elektrochemische Abscheidung eines Metalls auf einer Oberfläche beschreibt. Die resultierenden Fitting-Parameter können genutzt werden, um das Plating-Verhalten vorherzusagen und sind gleichzeitig eine bessere Abschätzung fur die Menge an geplatetem Lithium im Vergleich zu gängigen Methoden. Die Ergebnisse konnten außerdem helfen das Sicherheitsrisiko der Zelle bei Dendritenbildung vorherzusagen. Im zweiten Teil wird die chemische Zusammensetzung der SEI mittels XPS untersucht. Die Zusammensetzung, wie auch die mechanischen Eigenschaften der SEI, beeinflussen den Plating-Prozess stark und es wurde in vorhergehenden Arbeiten gezeigt, dass Plating auch die Morphologie und Dicke der SEI drastisch verändern kann. Zellen in verschiedenen Zuständen (geplatet, geladen, entladen), sowie Zellen verschiedener Hersteller wurden mit XPS untersucht. Während der Messungen wurde ein ungewollter Nebeneffekt des Messaufbaus entdeckt, der zu einer Migration von Lithium an die Oberflache der Proben geführt und die Messergebnisse verfälscht hat. Unabhängig von diesem Effekt war es dennoch möglich, zu zeigen, dass die SEI in Zellen verschiedener Hersteller stark unterschiedliche Zusammensetzungen haben kann und dass Plating nicht nur die Morphologie der SEI beeinflusst, sondern auch die chemische Zusammensetzung. Weiterhin konnte der ungewollte Nebeneffekt verwendet werden, um Proben zu identifizieren, die vor kurzem geplatet wurden und konnte in zukünftigen Arbeiten verwendet werden, um lokalisiert Lithium-Ablagerungen auf geplateten Proben zu identifizieren. Im letzten Teil wurde die Partikelstruktur der Anoden von Zellen verschiedener Zellhersteller mit Hilfe einer watershed-Partikeldetektion an LSM-Bildern untersucht. Die Verteilung der Partikelgrößen wurde mit dem Kapazitätsverlust gleicher Zelle durch Plating verglichen. Es wurde gezeigt, dass der Kapazitätsverlust mit Parametern, die aus den Partikelverteilungen extrahiert wurden, korreliert. Ein größerer Datensatz ist jedoch notwendig, um diese Ergebnisse zu validieren. Zusammenfassend hat diese Arbeit verschiedene neue Methoden aufgezeigt, um Plating auf verschiedenen Vergrößerungsebenen zu detektieren und zu charakterisieren. Neue Ansätze wurden gefunden, um das Platingverhalten von Zellen vorherzusagen, lokalisiertes Lithium auf der Oberfläche zu detektieren und Zellen platingresistenter designen zu können.

Design and comparison of two brushless DC drives for an electric propulsion system of solar-power unmanned aerial vehicles

Author : Dong, Rong
Publisher : Universitätsverlag der TU Berlin
ISBN 13 : 379833126X
Total Pages : 130 pages
Book Rating : 4.7/5 (983 download)

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Book Synopsis Design and comparison of two brushless DC drives for an electric propulsion system of solar-power unmanned aerial vehicles by : Dong, Rong

Download or read book Design and comparison of two brushless DC drives for an electric propulsion system of solar-power unmanned aerial vehicles written by Dong, Rong and published by Universitätsverlag der TU Berlin. This book was released on 2020-08-26 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt: The electrical propulsion system as the core component of solar-power Unmanned Aerial Vehicles (UAVs) for long duration flight requires high power density and stable drive technology. Brushless DC motors (BLDCM) with high power and torque density and control algorithms suitable for drive system are given preference for the application in UAVs. This dissertation is aimed at designing an improved BLDCM using only 4 interior magnet blocks to realize 8 poles compared to the conventional 8 magnet blocks structure. The performances of both BLDCM designs have been analytically determined and the motor models were verified through finite element software in ANSYS. Design and construction of the demonstrators of BLDCMs with the proposed and the conventional magnet structure have been carried out and a test bench for extensive performance comparison has been set up. Since the proposed magnet structure leads to a particularity of the magnetic circuit, the behavior of absolute and differential synchronous direct and quadrature inductances have been investigated by finite element model analysis and experiments. Efficiency maps were generated and thermal characteristics have been measured to gain a comprehensive understanding of the two motors. To reduce the uncertainty of sensor control for BLDCM, a high speed, good linearity analog isolation circuit to measure the voltages of 270 V DC voltage to realize sensorless control strategy has been designed. The circuit combines a PI controller with fast operational amplifiers with a built-in linearizing feedback photodiode loop of a linear optocoupler. A 3D stator model was built to analyse the mechanical resonance frequencies and possible excitation by the electromagnetic radial force leading to vibration and noise for the proposed and conventional rotor structure. Analytical calculation of natural mode frequencies has also been conducted to compare and validate the accuracy of FEM simulations and impact hammer testing experimental results. Das elektrische Antriebssystem als Kernkomponente von unbemannten Solarflugzeugen (UAVs, Unmanned Aerial Vehicles) für Langzeitflüge erfordert eine hohe Leistungsdichte und robuste Antriebstechnik. Bürstenlose Gleichstrommotoren (BLDCM) mit hoher Leistungs- und Drehmomentdichte sowie dafür angepasste Regelalgorithmen werden daher bevorzugt in UAVs eingesetzt. Diese Dissertation zielt darauf ab, einen verbesserten BLDCM mit nur 4 eingebetteten Magnetblöcken zu entwerfen, um 8 Pole zu realisieren im Vergleich zu der herkömmlichen Struktur mit 8 Magnetblöcken. Das Verhalten beider BLDCM-Designs wurde analytisch ermittelt und die Motormodelle mit Hilfe von Finite-Elemente-Software in ANSYS verifiziert. Design und Konstruktion der Prototypen mit der vorgeschlagenen und der herkömmlichen Magnetstruktur wurden durchgeführt und es wurde ein Prüfstand für einen umfassenden Leistungsvergleich aufgebaut. Da die vorgeschlagene Magnetstruktur zu einem Magnetkreis führt, bei dem die entgegengesetzten Pole keine Spiegelsymmetrie aufweisen, wurden die Längs- und Querinduktivität durch Finite-Elemente-Modellanalyse und Experimente absolut und differentiell untersucht. Weiterhin wurden Wirkungsgradkennfelder erstellt und das thermische Verhalten untersucht, um ein umfassendes Verständnis der beiden Motoren zu erhalten. Um das sensorbedingte Ausfallrisiko zu eliminieren, wurde eine schnelle analoge Isolationsschaltung mit hoher Linearität und Stabilität zur Messung der gepulsten Spannungen bei 270V Gleichspannung entwickelt, um eine sensorlose Steuerungsstrategie zu realisieren. Die Schaltung verwendet einen linearen Optokoppler mit integrierter Rückkopplungsfotodiode, sowie einen PI-Regler mit schnellen Operationsverstärkern im Rückkopplungspfad. Ein 3D-Statormodell wurde erstellt, um die mechanischen Resonanzfrequenzen und die mögliche Anregung durch die elektromagnetische Radialkraft zu analysieren, die zu Vibrationen und Geräuschen bei der vorgeschlagenen und herkömmlichen Rotorstruktur führt. Es wurde auch eine analytische Modalanalyse durchgeführt, um die Genauigkeit von FEM-Simulationen und experimentellen Ergebnissen mit dem Impulshammer zu vergleichen und zu validieren.

Advanced Silicon Carbide Devices and Processing

Author : Stephen Saddow
Publisher : BoD – Books on Demand
ISBN 13 : 9535121685
Total Pages : 260 pages
Book Rating : 4.5/5 (351 download)

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Book Synopsis Advanced Silicon Carbide Devices and Processing by : Stephen Saddow

Download or read book Advanced Silicon Carbide Devices and Processing written by Stephen Saddow and published by BoD – Books on Demand. This book was released on 2015-09-17 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the production of the first commercially available blue LED in the late 1980s, silicon carbide technology has grown into a billion-dollar industry world-wide in the area of solid-state lighting and power electronics. With this in mind we organized this book to bring to the attention of those well versed in SiC technology some new developments in the field with a particular emphasis on particularly promising technologies such as SiC-based solar cells and optoelectronics. We have balanced this with the more traditional subjects such as power electronics and some new developments in the improvement of the MOS system for SiC MOSFETS. Given the importance of advanced microsystems and sensors based on SiC, we also included a review on 3C-SiC for both microsystem and electronic applications.

Proceedings of SIE 2023

Author : Carmine Ciofi
Publisher : Springer Nature
ISBN 13 : 3031487117
Total Pages : 469 pages
Book Rating : 4.0/5 (314 download)

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Book Synopsis Proceedings of SIE 2023 by : Carmine Ciofi

Download or read book Proceedings of SIE 2023 written by Carmine Ciofi and published by Springer Nature. This book was released on 2024-01-04 with total page 469 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book showcases the state of the art in the field of electronics, as presented by researchers and engineers at the 54th Annual Meeting of the Italian Electronics Society (SIE), held in Noto (SR), Italy, on September 6–8, 2023. It covers a broad range of aspects, including: integrated circuits and systems, micro- and nano-electronic devices, microwave electronics, sensors and microsystems, optoelectronics and photonics, power electronics, electronic systems and applications.

High Efficiency Power Supply Using New SiC Devices

Author : Ashot Melkonyan
Publisher : kassel university press GmbH
ISBN 13 : 3899583027
Total Pages : 159 pages
Book Rating : 4.8/5 (995 download)

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Book Synopsis High Efficiency Power Supply Using New SiC Devices by : Ashot Melkonyan

Download or read book High Efficiency Power Supply Using New SiC Devices written by Ashot Melkonyan and published by kassel university press GmbH. This book was released on 2007 with total page 159 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Design and Control of Power Converters 2020

Author : Manuel Arias
Publisher : MDPI
ISBN 13 : 3036507027
Total Pages : 188 pages
Book Rating : 4.0/5 (365 download)

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Book Synopsis Design and Control of Power Converters 2020 by : Manuel Arias

Download or read book Design and Control of Power Converters 2020 written by Manuel Arias and published by MDPI. This book was released on 2021-06-04 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this book, nine papers focusing on different fields of power electronics are gathered, all of which are in line with the present trends in research and industry. Given the generality of the Special Issue, the covered topics range from electrothermal models and losses models in semiconductors and magnetics to converters used in high-power applications. In this last case, the papers address specific problems such as the distortion due to zero-current detection or fault investigation using the fast Fourier transform, all being focused on analyzing the topologies of high-power high-density applications, such as the dual active bridge or the H-bridge multilevel inverter. All the papers provide enough insight in the analyzed issues to be used as the starting point of any research. Experimental or simulation results are presented to validate and help with the understanding of the proposed ideas. To summarize, this book will help the reader to solve specific problems in industrial equipment or to increase their knowledge in specific fields.

Multi-MHz High Frequency Resonant DC-DC Power Converter

Author : Dianguo Xu
Publisher :
ISBN 13 : 9789811574252
Total Pages : 0 pages
Book Rating : 4.5/5 (742 download)

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Book Synopsis Multi-MHz High Frequency Resonant DC-DC Power Converter by : Dianguo Xu

Download or read book Multi-MHz High Frequency Resonant DC-DC Power Converter written by Dianguo Xu and published by . This book was released on 2021 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book analyzes multi-MHz high frequency resonant DC-DC power converters with operating frequencies ranging from several MHz to tens of MHz in detail, aiming to support researchers and engineers with a focus on multi-MHz high frequency converters. The inverter stage, rectifier stage, matching network stage are analyzed in detail. Based on the three basic stages, typical non-isolated and isolated resonant DC-DC converters are depicted. To reduce the high driving loss under multi-MHz, resonant driving methods are introduced and improved. Also, the design and selection methods of passive and active component under multi-MHz frequency are described, especially for aircore inductor and transformer. Furthermore, multi-MHz resonant converter provides an approach for achieving flexible system. .

Electrical & Electronics Abstracts

Author :
Publisher :
ISBN 13 :
Total Pages : 1576 pages
Book Rating : 4.:/5 (319 download)

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Book Synopsis Electrical & Electronics Abstracts by :

Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1995 with total page 1576 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Silicon Carbide Power Devices

Author : B. Jayant Baliga
Publisher : World Scientific
ISBN 13 : 9812774521
Total Pages : 526 pages
Book Rating : 4.8/5 (127 download)

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Book Synopsis Silicon Carbide Power Devices by : B. Jayant Baliga

Download or read book Silicon Carbide Power Devices written by B. Jayant Baliga and published by World Scientific. This book was released on 2005 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices. Sample Chapter(s). Chapter 1: Introduction (72 KB). Contents: Material Properties and Technology; Breakdown Voltage; PiN Rectifiers; Schottky Rectifiers; Shielded Schottky Rectifiers; Metal-Semiconductor Field Effect Transistors; The Baliga-Pair Configuration; Planar Power MOSFETs; Shielded Planar MOSFETs; Trench-Gate Power MOSFETs; Shielded Trendch-Gate MOSFETs; Charge Coupled Structures; Integral Diodes; Lateral High Voltage FETs; Synopsis. Readership: For practising engineers working on power devices, and as a supplementary textbook for a graduate level course on power devices.

High Frequency MOSFET Gate Drivers

Author : ZhiLiang Zhang
Publisher : IET
ISBN 13 : 1785613650
Total Pages : 296 pages
Book Rating : 4.7/5 (856 download)

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Book Synopsis High Frequency MOSFET Gate Drivers by : ZhiLiang Zhang

Download or read book High Frequency MOSFET Gate Drivers written by ZhiLiang Zhang and published by IET. This book was released on 2017-09-14 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes advanced high frequency power MOSFET gate driver technologies, which serve a critical role between control and power devices. A gate driver is a power amplifier that accepts a low-power input from a controller integrated circuit and produces a high-current drive input for the gate of a high-power transistor such as a power MOSFET (metal-oxide-semiconductor field-effect transistor).

International Aerospace Abstracts

Author :
Publisher :
ISBN 13 :
Total Pages : 944 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis International Aerospace Abstracts by :

Download or read book International Aerospace Abstracts written by and published by . This book was released on 1996 with total page 944 pages. Available in PDF, EPUB and Kindle. Book excerpt:

CVD growth of SiC for high-power and high-frequency applications

Author : Robin Karhu
Publisher : Linköping University Electronic Press
ISBN 13 : 9176851494
Total Pages : 40 pages
Book Rating : 4.1/5 (768 download)

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Book Synopsis CVD growth of SiC for high-power and high-frequency applications by : Robin Karhu

Download or read book CVD growth of SiC for high-power and high-frequency applications written by Robin Karhu and published by Linköping University Electronic Press. This book was released on 2019-02-14 with total page 40 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide (SiC) is a wide bandgap semiconductor that has attracted a lot of interest for electronic applications due to its high thermal conductivity, high saturation electron drift velocity and high critical electric field strength. In recent years commercial SiC devices have started to make their way into high and medium voltage applications. Despite the advancements in SiC growth over the years, several issues remain. One of these issues is that the bulk grown SiC wafers are not suitable for electronic applications due to the high background doping and high density of basal plane dislocations (BPD). Due to these problems SiC for electronic devices must be grown by homoepitaxy. The epitaxial growth is performed in chemical vapor deposition (CVD) reactors. In this work, growth has been performed in a horizontal hot-wall CVD (HWCVD) reactor. In these reactors it is possible to produce high-quality SiC epitaxial layers within a wide range of doping, both n- and p-type. SiC is a well-known example of polytypism, where the different polytypes exist as different stacking sequences of the Si-C bilayers. Polytypism makes polytype stability a problem during growth of SiC. To maintain polytype stability during homoepitaxy of the hexagonal polytypes the substrates are usually cut so that the angle between the surface normal and the c-axis is a few degrees, typically 4 or 8°. The off-cut creates a high density of micro-steps at the surface. These steps allow for the replication of the substrates polytype into the growing epitaxial layer, the growth will take place in a step-flow manner. However, there are some drawbacks with step-flow growth. One is that BPDs can replicate from the substrate into the epitaxial layer. Another problem is that 4H-SiC is often used as a substrate for growth of GaN epitaxial layers. The epitaxial growth of GaN has been developed on on-axis substrates (surface normal coincides with c-axis), so epitaxial 4H-SiC layers grown on off-axis substrates cannot be used as substrates for GaN epitaxial growth. In efforts to solve the problems with off-axis homoepitaxy of 4H-SiC, on-axis homoepitaxy has been developed. In this work, further development of wafer-scale on-axis homoepitaxy has been made. This development has been made on a Si-face of 4H-SiC substrates. The advances include highly resistive epilayers grown on on-axis substrates. In this thesis the ability to control the surface morphology of epitaxial layers grown on on-axis homoepitaxy is demonstrated. This work also includes growth of isotopically enriched 4H-SiC on on-axis substrates, this has been done to increase the thermal conductivity of the grown epitaxial layers. In (paper 1) on-axis homoepitaxy of 4H-SiC has been developed on 100 mm diameter substrates. This paper also contains comparisons between different precursors. In (paper 2) we have further developed on-axis homoepitaxy on 100 mm diameter wafers, by doping the epitaxial layers with vanadium. The vanadium doping of the epitaxial layers makes the layers highly resistive and thus suitable to use as a substrate for III-nitride growth. In (paper 3) we developed a method to control the surface morphology and reduce the as-grown surface roughness in samples grown on on-axis substrates. In (paper 4) we have increased the thermal conductivity of 4H-SiC epitaxial layers by growing the layers using isotopically enriched precursors. In (paper 5) we have investigated the role chlorine have in homoepitaxial growth of 4H-SiC. In (paper 6) we have investigated the charge carrier lifetime in as-grown samples and traced variations in lifetime to structural defects in the substrate. In (paper 7) we have investigated the formation mechanism of a morphological defect in homoepitaxial grown 4H-SiC.

The Engineering Index Annual

Author :
Publisher :
ISBN 13 :
Total Pages : 2282 pages
Book Rating : 4.:/5 (319 download)

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Book Synopsis The Engineering Index Annual by :

Download or read book The Engineering Index Annual written by and published by . This book was released on 1988 with total page 2282 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its creation in 1884, Engineering Index has covered virtually every major engineering innovation from around the world. It serves as the historical record of virtually every major engineering innovation of the 20th century. Recent content is a vital resource for current awareness, new production information, technological forecasting and competitive intelligence. The world?s most comprehensive interdisciplinary engineering database, Engineering Index contains over 10.7 million records. Each year, over 500,000 new abstracts are added from over 5,000 scholarly journals, trade magazines, and conference proceedings. Coverage spans over 175 engineering disciplines from over 80 countries. Updated weekly.

Advanced DC-DC Power Converters and Switching Converters

Author : Salvatore Musumeci
Publisher : MDPI
ISBN 13 : 303650446X
Total Pages : 188 pages
Book Rating : 4.0/5 (365 download)

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Book Synopsis Advanced DC-DC Power Converters and Switching Converters by : Salvatore Musumeci

Download or read book Advanced DC-DC Power Converters and Switching Converters written by Salvatore Musumeci and published by MDPI. This book was released on 2021-03-30 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nowadays, power electronics is an enabling technology in the energy development scenario. Furthermore, power electronics is strictly linked with several fields of technological growth, such as consumer electronics, IT and communications, electrical networks, utilities, industrial drives and robotics, and transportation and automotive sectors. Moreover, the widespread use of power electronics enables cost savings and minimization of losses in several technology applications required for sustainable economic growth. The topologies of DC–DC power converters and switching converters are under continuous development and deserve special attention to highlight the advantages and disadvantages for use increasingly oriented towards green and sustainable development. DC–DC converter topologies are developed in consideration of higher efficiency, reliable control switching strategies, and fault-tolerant configurations. Several types of switching converter topologies are involved in isolated DC–DC converter and nonisolated DC–DC converter solutions operating in hard-switching and soft-switching conditions. Switching converters have applications in a broad range of areas in both low and high power densities. The articles presented in the Special Issue titled "Advanced DC-DC Power Converters and Switching Converters" consolidate the work on the investigation of the switching converter topology considering the technological advances offered by innovative wide-bandgap devices and performance optimization methods in control strategies used.