Novel Lateral MOS Controlled Power Devices and Technologies for Power Integrated Circuits

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ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (535 download)

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Book Synopsis Novel Lateral MOS Controlled Power Devices and Technologies for Power Integrated Circuits by : Zuxin Qin

Download or read book Novel Lateral MOS Controlled Power Devices and Technologies for Power Integrated Circuits written by Zuxin Qin and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

MOS Devices for Low-Voltage and Low-Energy Applications

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Publisher : John Wiley & Sons
ISBN 13 : 1119107385
Total Pages : 788 pages
Book Rating : 4.1/5 (191 download)

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Book Synopsis MOS Devices for Low-Voltage and Low-Energy Applications by : Yasuhisa Omura

Download or read book MOS Devices for Low-Voltage and Low-Energy Applications written by Yasuhisa Omura and published by John Wiley & Sons. This book was released on 2016-12-22 with total page 788 pages. Available in PDF, EPUB and Kindle. Book excerpt: Helps readers understand the physics behind MOS devices for low-voltage and low-energy applications Based on timely published and unpublished work written by expert authors Discusses various promising MOS devices applicable to low-energy environmental and biomedical uses Describes the physical effects (quantum, tunneling) of MOS devices Demonstrates the performance of devices, helping readers to choose right devices applicable to an industrial or consumer environment Addresses some Ge-based devices and other compound-material-based devices for high-frequency applications and future development of high performance devices. "Seemingly innocuous everyday devices such as smartphones, tablets and services such as on-line gaming or internet keyword searches consume vast amounts of energy. Even when in standby mode, all these devices consume energy. The upcoming 'Internet of Things' (IoT) is expected to deploy 60 billion electronic devices spread out in our homes, cars and cities. Britain is already consuming up to 16 per cent of all its power through internet use and this rate is doubling every four years. According to The UK's Daily Mail May (2015), if usage rates continue, all of Britain's power supply could be consumed by internet use in just 20 years. In 2013, U.S. data centers consumed an estimated 91 billion kilowatt-hours of electricity, corresponding to the power generated by seventeen 1000-megawatt nuclear power plants. Data center electricity consumption is projected to increase to roughly 140 billion kilowatt-hours annually by 2020, the equivalent annual output of 50 nuclear power plants." —Natural Resources Defense Council, USA, Feb. 2015 All these examples stress the urgent need for developing electronic devices that consume as little energy as possible. The book “MOS Devices for Low-Voltage and Low-Energy Applications” explores the different transistor options that can be utilized to achieve that goal. It describes in detail the physics and performance of transistors that can be operated at low voltage and consume little power, such as subthreshold operation in bulk transistors, fully depleted SOI devices, tunnel FETs, multigate and gate-all-around MOSFETs. Examples of low-energy circuits making use of these devices are given as well. "The book MOS Devices for Low-Voltage and Low-Energy Applications is a good reference for graduate students, researchers, semiconductor and electrical engineers who will design the electronic systems of tomorrow." —Dr. Jean-Pierre Colinge, Taiwan Semiconductor Manufacturing Company (TSMC) "The authors present a creative way to show how different MOS devices can be used for low-voltage and low-power applications. They start with Bulk MOSFET, following with SOI MOSFET, FinFET, gate-all-around MOSFET, Tunnel-FET and others. It is presented the physics behind the devices, models, simulations, experimental results and applications. This book is interesting for researchers, graduate and undergraduate students. The low-energy field is an important topic for integrated circuits in the future and none can stay out of this." —Prof. Joao A. Martino, University of Sao Paulo, Brazil

Integrated Power Devices and TCAD Simulation

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Publisher : CRC Press
ISBN 13 : 1351831712
Total Pages : 366 pages
Book Rating : 4.3/5 (518 download)

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Book Synopsis Integrated Power Devices and TCAD Simulation by : Yue Fu

Download or read book Integrated Power Devices and TCAD Simulation written by Yue Fu and published by CRC Press. This book was released on 2017-12-19 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt: From power electronics to power integrated circuits (PICs), smart power technologies, devices, and beyond, Integrated Power Devices and TCAD Simulation provides a complete picture of the power management and semiconductor industry. An essential reference for power device engineering students and professionals, the book not only describes the physics inside integrated power semiconductor devices such lateral double-diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and super junction LDMOSFETs but also delivers a simple introduction to power management systems. Instead of abstract theoretical treatments and daunting equations, the text uses technology computer-aided design (TCAD) simulation examples to explain the design of integrated power semiconductor devices. It also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs). Including a virtual process flow for smart PIC technology as well as a hard-to-find technology development organization chart, Integrated Power Devices and TCAD Simulation gives students and junior engineers a head start in the field of power semiconductor devices while helping to fill the gap between power device engineering and power management systems.

Semiconductor Materials and Technology

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Publisher : Trans Tech Publications Ltd
ISBN 13 : 3035706697
Total Pages : 260 pages
Book Rating : 4.0/5 (357 download)

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Book Synopsis Semiconductor Materials and Technology by : R.M. Mehra

Download or read book Semiconductor Materials and Technology written by R.M. Mehra and published by Trans Tech Publications Ltd. This book was released on 1997-08-25 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt: The subject area of electronic devices has undergone a rapid expansion in recent years. New developments are continually accurring all over the world. Progress in the field of electronic devices is, however, dependent upon the production and characterization of device grade material. The science and technology of electronic materials has attracted somewhat less attention, as compared with device development.

MOS Controlled Power Devices for High Voltage Application

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Publisher :
ISBN 13 : 9783891918500
Total Pages : 167 pages
Book Rating : 4.9/5 (185 download)

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Book Synopsis MOS Controlled Power Devices for High Voltage Application by : Hartmut Dettmer

Download or read book MOS Controlled Power Devices for High Voltage Application written by Hartmut Dettmer and published by . This book was released on 1994 with total page 167 pages. Available in PDF, EPUB and Kindle. Book excerpt: "This thesis describes the development, design, fabrication and characterization of MOS controlled power devices for high voltage application"--Back cover.

Wide Bandgap Semiconductor Power Devices

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Publisher : Woodhead Publishing
ISBN 13 : 0081023073
Total Pages : 420 pages
Book Rating : 4.0/5 (81 download)

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Book Synopsis Wide Bandgap Semiconductor Power Devices by : B. Jayant Baliga

Download or read book Wide Bandgap Semiconductor Power Devices written by B. Jayant Baliga and published by Woodhead Publishing. This book was released on 2018-10-17 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact

Basic Principles of Power Electronics

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Publisher : Springer Science & Business Media
ISBN 13 : 3642826741
Total Pages : 313 pages
Book Rating : 4.6/5 (428 download)

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Book Synopsis Basic Principles of Power Electronics by : Klemens Heumann

Download or read book Basic Principles of Power Electronics written by Klemens Heumann and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 313 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power electronics became an identifiably separate area of electrical engineering with the invention of the thyristor about 30 years ago. The growing demand for controllability and conversion of electric energy has made this area increasingly important, which in turn has resulted in new device, circuit and control developments. In particular, new components, such as the GTO and power MOSFET, continue to extend power electronic technology to new applications. The technology embodied by the name "power electronics" is complex. It consists of both power level and signal level electronics, as well as thermal, mechanical, control, and protection systems. The power circuit, that part of the system actually processing energy, can be thought of as an amplifier around which is placed a closed loop control system. The goal of this book is to provide an easily understood exposition of the principles of power electronics. Common features of systems and their behavior are identified in order to facilitate understanding. Thyristor converters are distinguished and treated according to their mode of commutation. Circuits for various converters and their controls are presented, along with a description of ancillary circuits such as those required for snubbing and gate drives. Thermal and electrical properties of semiconductor power devices are discussed. The line-converter and converter-load interfaces are examined, leading to some general statements being made about energy transfer. Application areas are identified and categorized with respect to power and frequency ranges. The many tables presented in the book provide an easily used reference source.

Development of 4H Silicon Carbide JFET-based Power Integrated Circuits

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ISBN 13 :
Total Pages : 140 pages
Book Rating : 4.:/5 (499 download)

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Book Synopsis Development of 4H Silicon Carbide JFET-based Power Integrated Circuits by : Yongxi Zhang

Download or read book Development of 4H Silicon Carbide JFET-based Power Integrated Circuits written by Yongxi Zhang and published by . This book was released on 2008 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt: 4H-Silicon Carbide (4H-SiC) is a promising semiconductor for the next generation of high power, high frequency, and high temperature applications. Significant progresses have been made on SiC technologies since 1990's. Superior device performance demonstrated by SiC discrete power devices is leading to the commercialization of SiC diodes and transistors targeting mid and high power level applications. As compared to the vertical power devices, the lateral device technology promises to fulfill the monolithic integration of both power devices and control circuits. SiC power integrated circuits (PICs) share similar advantages as Si PICs while providing a much higher power handling capability at higher frequency. In addition, SiC power junction field transistor (JFET) is promising for high temperature, reliable operation without suffering from the reliability problems faced by metal-oxide-semiconductor junction field transistors (MOSFETs) and bipolar junction transistors (BJTs). Therefore, the lateral JFET technology is investigated under this research. This thesis describes design, fabrication, characterization, and further optimization and analysis of a novel vertical channel lateral JFET (VC-LJFET) technology in 4H-SiC and the demonstration of the world's first SiC power Integrated circuit. A double reduced surface electric field (RESURF) structure is applied to achieve higher voltage and lower on-resistance for the power lateral JFET (LJFET). A 4-stage buffer circuit based on the resistive-load n-type JFET inverter is designed and integrated with the power LJFET to form a monolithic power integrated circuit. Important fabrication procedures are presented. The fabricated power LJFET demonstrates a blocking voltage of 1028 V and a specific on-resistance of 9.1 m[ohm]; cm2, resulting in a record-high VBR2/RON, SP figure-of-merit (FOM) of 116 MW/cm2 for lateral power devices. The optimized RESURF structure demonstrates blocking capability of 120 V/[micro]m in 4H-SiC. The temperature dependences of important device parameters, such as threshold voltage, transconductance, and electron mobility, are also discussed. Based on the technology, the integration of a high performance lateral power JFET with buffer circuits has been demonstrated for the first time. The SiC LJFET power IC chips demonstrate a record high power level at frequencies up to a few MHz. An on-chip temperature sensing diode is implemented to monitor the chip junction temperature. The rise time and fall time around 20 ns for the SiC power LJFET are observed and remains unchanged even at a junction temperature as high as 250 oC when driven by a Si MOS gate driver. The demonstration of SiC power integration technology points to the robust integrated power electronics applications in the harsh environment and boosts the power level of single-chip power electronic system from 100 W to 1000 W.

Diffusion and Defect Data

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Publisher :
ISBN 13 :
Total Pages : 650 pages
Book Rating : 4.E/5 ( download)

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Book Synopsis Diffusion and Defect Data by :

Download or read book Diffusion and Defect Data written by and published by . This book was released on 1997 with total page 650 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Power Management Integrated Circuits

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Publisher : CRC Press
ISBN 13 : 1040117406
Total Pages : 400 pages
Book Rating : 4.0/5 (41 download)

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Book Synopsis Power Management Integrated Circuits by : Amit Patra

Download or read book Power Management Integrated Circuits written by Amit Patra and published by CRC Press. This book was released on 2024-09-09 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book intends to be a comprehensive text on the topic of integrated circuits for power management, putting together both theoretical foundations and practical details, leading to successful design practices in research and industry. It covers all the three main categories of power management circuits, viz., linear regulators, inductor-based switchers and switched-capacitor circuits, and presents detailed discussion of their common topologies, operation and modeling. Features Includes underlying theory and design/implementation practical ingredients for power management integrated circuits (PMICs). Provides in-depth analysis of topologies and circuits related to linear regulators, switched-capacitor converters and inductor-based converters. Covers all the relevant topics at the intersection between power electronics and integrated circuit design areas. Provides guidelines for design of circuits and solutions for all the pertinent topologies. Indicates all important issues and the related trade-offs in the design of PMICs. The book will be a valuable resource for senior- and graduate-level students as well as industry professionals who have done university-level courses on analog circuit design, control systems and power electronics.

Design of Power Management Integrated Circuits

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Publisher : John Wiley & Sons
ISBN 13 : 1119123062
Total Pages : 484 pages
Book Rating : 4.1/5 (191 download)

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Book Synopsis Design of Power Management Integrated Circuits by : Bernhard Wicht

Download or read book Design of Power Management Integrated Circuits written by Bernhard Wicht and published by John Wiley & Sons. This book was released on 2024-07-22 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt: Comprehensive resource on power management ICs affording new levels of functionality and applications with cost reduction in various fields Design of Power Management Integrated Circuits is a comprehensive reference for power management IC design, covering the circuit design of main power management circuits like linear and switched-mode voltage regulators, along with sub-circuits such as power switches, gate drivers and their supply, level shifters, the error amplifier, current sensing, and control loop design. Circuits for protection and diagnostics, as well as aspects of the physical design like lateral and vertical power delivery, pin-out, floor planning, grounding/supply guidelines, and packaging, are also addressed. A full chapter is dedicated to the design of integrated passives. The text illustrates the application of power management integrated circuits (PMIC) to growth areas like computing, the internet of Things, mobility, and renewable energy. Includes numerous real-world examples, case studies, and exercises illustrating key design concepts and techniques. Offering a unique insight into this rapidly evolving technology through the author's experience developing PMICs in both the industrial and academic environment, Design of Power Management Integrated Circuits includes information on: Capacitive, inductive and hybrid DC-DC converters and their essential circuit blocks, covering error amplifiers, comparators, and ramp generators Sensing, protection, and diagnostics, covering thermal protection, inductive loads and clamping structures, under-voltage, reference and power-on reset generation Integrated MOS, MOM and MIM capacitors, integrated inductors Control loop design and PWM generation ensuring stability and fast transient response; subharmonic oscillations in current mode control (analysis and circuit design for slope compensation) DC behavior and DC-related circuit design, covering power efficiency, line and load regulation, error amplifier, dropout, and power transistor sizing Commonly used level shifters (including sizing rules) and cascaded (tapered) driver sizing and optimization guidelines Optimizing the physical design considering packaging, floor planning, EMI, pinout, PCB design and thermal design Design of Power Management Integrated Circuits is an essential resource on the subject for circuit designers/IC designers, system engineers, and application engineers, along with advanced undergraduate students and graduate students in related programs of study.

Silicon Carbide Power Devices

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Publisher : World Scientific
ISBN 13 : 9812774521
Total Pages : 526 pages
Book Rating : 4.8/5 (127 download)

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Book Synopsis Silicon Carbide Power Devices by : B. Jayant Baliga

Download or read book Silicon Carbide Power Devices written by B. Jayant Baliga and published by World Scientific. This book was released on 2006-01-05 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices. Sample Chapter(s). Chapter 1: Introduction (72 KB). Contents: Material Properties and Technology; Breakdown Voltage; PiN Rectifiers; Schottky Rectifiers; Shielded Schottky Rectifiers; Metal-Semiconductor Field Effect Transistors; The Baliga-Pair Configuration; Planar Power MOSFETs; Shielded Planar MOSFETs; Trench-Gate Power MOSFETs; Shielded Trendch-Gate MOSFETs; Charge Coupled Structures; Integral Diodes; Lateral High Voltage FETs; Synopsis. Readership: For practising engineers working on power devices, and as a supplementary textbook for a graduate level course on power devices.

Proceedings of the 1996 Bipolar/BiCMOS Circuits and Technology Meeting

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Publisher : Institute of Electrical & Electronics Engineers(IEEE)
ISBN 13 : 9780780335172
Total Pages : 236 pages
Book Rating : 4.3/5 (351 download)

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Book Synopsis Proceedings of the 1996 Bipolar/BiCMOS Circuits and Technology Meeting by : IEEE Electron Devices Society

Download or read book Proceedings of the 1996 Bipolar/BiCMOS Circuits and Technology Meeting written by IEEE Electron Devices Society and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 1996 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt:

The IGBT Device

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Publisher : Elsevier
ISBN 13 : 0323999123
Total Pages : 800 pages
Book Rating : 4.3/5 (239 download)

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Book Synopsis The IGBT Device by : B. Jayant Baliga

Download or read book The IGBT Device written by B. Jayant Baliga and published by Elsevier. This book was released on 2022-12-02 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: The IGBT Device: Physics, Design and Applications of the Insulated Gate Bipolar Transistor, Second Edition provides the essential information needed by applications engineers to design new products using the device in sectors including consumer, industrial, lighting, transportation, medical and renewable energy. The IGBT device has proven to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and refrigeration and railway locomotives), electronic ignition systems for gasoline powered motor vehicles and energy-saving compact fluorescent light bulbs. The book presents recent applications in plasma displays (flat-screen TVs) and electric power transmission systems, alternative energy systems and energy storage, but it is also used in all renewable energy generation systems, including solar and wind power. This book is the first available on the applications of the IGBT. It will unlock IGBT for a new generation of engineering applications, making it essential reading for a wide audience of electrical and design engineers, as well as an important publication for semiconductor specialists. Presents essential design information for applications engineers utilizing IGBTs in the consumer, industrial, lighting, transportation, medical and renewable energy sectors Teaches the methodology for the design of IGBT chips, including edge terminations, cell topologies, gate layouts, and integrated current sensors Covers applications of the IGBT, a device manufactured around the world by more than a dozen companies with sales exceeding $5 Billion Written by the inventor of the device, this is the first book to highlight the key role of the IGBT in enabling electric vehicles and renewable energy systems with global impacts on climate change

Smart Power Integration

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Publisher : John Wiley & Sons
ISBN 13 : 1786308371
Total Pages : 324 pages
Book Rating : 4.7/5 (863 download)

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Book Synopsis Smart Power Integration by : Mohamed Abouelatta

Download or read book Smart Power Integration written by Mohamed Abouelatta and published by John Wiley & Sons. This book was released on 2022-10-18 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt: Smart power integration is at the crossroads of different fields of electronics such as high and low power, engine control and electrothermal studies of devices and circuits. These circuits are complex and are heavily influenced by substrate coupling, especially where 3D integration is concerned. This book provides an overview of smart power integration, including high voltage devices, dedicated and compatible processes, as well as isolation techniques. Two types of integration are highlighted: modular or hybrid integration, together with compatible devices such as the insulated gate bipolar transistor (IGBT); and monolithic integration, specifically through the paradigm of functional integration. Smart Power Integration outlines the main MOS devices for high voltage integrated circuits, and explores into the fields of codesign, coupling hardware and software design, including applications to motor control. Studies focusing on heat pipes for electronics cooling are also outlined.

The IGBT Device

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Publisher : William Andrew
ISBN 13 : 1455731536
Total Pages : 733 pages
Book Rating : 4.4/5 (557 download)

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Book Synopsis The IGBT Device by : B. Jayant Baliga

Download or read book The IGBT Device written by B. Jayant Baliga and published by William Andrew. This book was released on 2015-03-06 with total page 733 pages. Available in PDF, EPUB and Kindle. Book excerpt: The IGBT device has proved to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and refrigeration and railway locomotives), electronic ignition systems for gasolinepowered motor vehicles and energy-saving compact fluorescent light bulbs. Recent applications include plasma displays (flat-screen TVs) and electric power transmission systems, alternative energy systems and energy storage. This book is the first available to cover the applications of the IGBT, and provide the essential information needed by applications engineers to design new products using the device, in sectors including consumer, industrial, lighting, transportation, medical and renewable energy. The author, B. Jayant Baliga, invented the IGBT in 1980 while working for GE. His book will unlock IGBT for a new generation of engineering applications, making it essential reading for a wide audience of electrical engineers and design engineers, as well as an important publication for semiconductor specialists. Essential design information for applications engineers utilizing IGBTs in the consumer, industrial, lighting, transportation, medical and renewable energy sectors. Readers will learn the methodology for the design of IGBT chips including edge terminations, cell topologies, gate layouts, and integrated current sensors. The first book to cover applications of the IGBT, a device manufactured around the world by more than a dozen companies with sales exceeding $5 Billion; written by the inventor of the device.

Chemical Abstracts

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Publisher :
ISBN 13 :
Total Pages : 2540 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Chemical Abstracts by :

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt: