Non Contact Characterization Of Dielectric Conduction On 4h Sic

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Physics and Technology of Silicon Carbide Devices

Author : George Gibbs
Publisher :
ISBN 13 : 9781681176437
Total Pages : 284 pages
Book Rating : 4.1/5 (764 download)

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Book Synopsis Physics and Technology of Silicon Carbide Devices by : George Gibbs

Download or read book Physics and Technology of Silicon Carbide Devices written by George Gibbs and published by . This book was released on 2016-10-01 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon (Si) is by far the most widely used semiconductor material for power devices. On the other hand, Si-based power devices are approaching their material limits, which has provoked a lot of efforts to find alternatives to Si-based power devices for better performance. With the rapid innovations and developments in the semiconductor industry, Silicon Carbide (SiC) power devices have progressed from immature prototypes in laboratories to a viable alternative to Si-based power devices in high-efficiency and high-power density applications. SiC devices have numerous persuasive advantages--high-breakdown voltage, high-operating electric field, high-operating temperature, high-switching frequency and low losses. Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). Recently, some SiC power devices, for example, Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effecttransistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. Physics and Technology of Silicon Carbide Devices abundantly describes recent technologies on manufacturing, processing, characterization, modeling, etc. for SiC devices.

Fundamentals of Silicon Carbide Technology

Author : Tsunenobu Kimoto
Publisher : John Wiley & Sons
ISBN 13 : 1118313526
Total Pages : 565 pages
Book Rating : 4.1/5 (183 download)

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Book Synopsis Fundamentals of Silicon Carbide Technology by : Tsunenobu Kimoto

Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-11-24 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

Silicon Carbide

Author : Wolfgang J. Choyke
Publisher : Springer Science & Business Media
ISBN 13 : 3642188702
Total Pages : 911 pages
Book Rating : 4.6/5 (421 download)

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Book Synopsis Silicon Carbide by : Wolfgang J. Choyke

Download or read book Silicon Carbide written by Wolfgang J. Choyke and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 911 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.

Properties of Silicon Carbide

Author : Gary Lynn Harris
Publisher : IET
ISBN 13 : 9780852968703
Total Pages : 312 pages
Book Rating : 4.9/5 (687 download)

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Book Synopsis Properties of Silicon Carbide by : Gary Lynn Harris

Download or read book Properties of Silicon Carbide written by Gary Lynn Harris and published by IET. This book was released on 1995 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: This well structured and fully indexed book helps to understand and fully characterize the SiC system.

Electrical & Electronics Abstracts

Author :
Publisher :
ISBN 13 :
Total Pages : 2304 pages
Book Rating : 4.3/5 (243 download)

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Book Synopsis Electrical & Electronics Abstracts by :

Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 2304 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Gases: Advances in Research and Application: 2011 Edition

Author :
Publisher : ScholarlyEditions
ISBN 13 : 146492063X
Total Pages : 2282 pages
Book Rating : 4.4/5 (649 download)

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Book Synopsis Gases: Advances in Research and Application: 2011 Edition by :

Download or read book Gases: Advances in Research and Application: 2011 Edition written by and published by ScholarlyEditions. This book was released on 2012-01-09 with total page 2282 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gases: Advances in Research and Application: 2011 Edition is a ScholarlyEditions™ eBook that delivers timely, authoritative, and comprehensive information about Gases. The editors have built Gases: Advances in Research and Application: 2011 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about Gases in this eBook to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Gases: Advances in Research and Application: 2011 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.

Optical Characterization of Semiconductors

Author : Sidney Perkowitz
Publisher : Elsevier
ISBN 13 : 0080984274
Total Pages : 229 pages
Book Rating : 4.0/5 (89 download)

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Book Synopsis Optical Characterization of Semiconductors by : Sidney Perkowitz

Download or read book Optical Characterization of Semiconductors written by Sidney Perkowitz and published by Elsevier. This book was released on 2012-12-02 with total page 229 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book to explain, illustrate, and compare the most widely used methods in optics: photoluminescence, infrared spectroscopy, and Raman scattering. Written with non-experts in mind, the book develops the background needed to understand the why and how of each technique, but does not require special knowledge of semiconductors or optics. Each method is illustrated with numerous case studies. Practical information drawn from the authors experience is given to help establish optical facilities, including commercial sources for equipment, and experimental details. For industrial scientists with specific problems in semiconducting materials; for academic scientists who wish to apply their spectroscopic methods to characterization problems; and for students in solid state physics, materials science and engineering, and semiconductor electronics and photonics, this book provides a unique overview, bringing together these valuable techniques in a coherent wayfor the first time.Discusses and compares infrared, Raman, and photoluminescence methodsEnables readers to choose the best method for a given problemIllustrates applications to help non-experts and industrial users, with answers to selected common problemsPresents fundamentals with examples from the semiconductor literature without excessive abstract discussionFeatures equipment lists and discussion of techniques to help establish characterization laboratories

Silicon Carbide--materials, Processing and Devices

Author :
Publisher :
ISBN 13 :
Total Pages : 578 pages
Book Rating : 4.0/5 ( download)

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Book Synopsis Silicon Carbide--materials, Processing and Devices by :

Download or read book Silicon Carbide--materials, Processing and Devices written by and published by . This book was released on 2000 with total page 578 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Conductive Atomic Force Microscopy

Author : Mario Lanza
Publisher : John Wiley & Sons
ISBN 13 : 3527340912
Total Pages : 382 pages
Book Rating : 4.5/5 (273 download)

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Book Synopsis Conductive Atomic Force Microscopy by : Mario Lanza

Download or read book Conductive Atomic Force Microscopy written by Mario Lanza and published by John Wiley & Sons. This book was released on 2017-12-04 with total page 382 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first book to summarize the applications of CAFM as the most important method in the study of electronic properties of materials and devices at the nanoscale. To provide a global perspective, the chapters are written by leading researchers and application scientists from all over the world and cover novel strategies, configurations and setups where new information will be obtained with the help of CAFM. With its substantial content and logical structure, this is a valuable reference for researchers working with CAFM or planning to use it in their own fields of research.

Defects in Microelectronic Materials and Devices

Author : Daniel M. Fleetwood
Publisher : CRC Press
ISBN 13 : 1420043773
Total Pages : 772 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis Defects in Microelectronic Materials and Devices by : Daniel M. Fleetwood

Download or read book Defects in Microelectronic Materials and Devices written by Daniel M. Fleetwood and published by CRC Press. This book was released on 2008-11-19 with total page 772 pages. Available in PDF, EPUB and Kindle. Book excerpt: Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.A comprehensive survey of defe

JJAP

Author :
Publisher :
ISBN 13 :
Total Pages : 844 pages
Book Rating : 4.:/5 (318 download)

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Book Synopsis JJAP by :

Download or read book JJAP written by and published by . This book was released on 2008 with total page 844 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Power Electronics Device Applications of Diamond Semiconductors

Author : Satoshi Koizumi
Publisher : Woodhead Publishing
ISBN 13 : 0081021844
Total Pages : 468 pages
Book Rating : 4.0/5 (81 download)

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Book Synopsis Power Electronics Device Applications of Diamond Semiconductors by : Satoshi Koizumi

Download or read book Power Electronics Device Applications of Diamond Semiconductors written by Satoshi Koizumi and published by Woodhead Publishing. This book was released on 2018-06-29 with total page 468 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power Electronics Device Applications of Diamond Semiconductors presents state-of-the-art research on diamond growth, doping, device processing, theoretical modeling and device performance. The book begins with a comprehensive and close examination of diamond crystal growth from the vapor phase for epitaxial diamond and wafer preparation. It looks at single crystal vapor deposition (CVD) growth sectors and defect control, ultra high purity SC-CVD, SC diamond wafer CVD, heteroepitaxy on Ir/MqO and needle-induced large area growth, also discussing the latest doping and semiconductor characterization methods, fundamental material properties and device physics. The book concludes with a discussion of circuits and applications, featuring the switching behavior of diamond devices and applications, high frequency and high temperature operation, and potential applications of diamond semiconductors for high voltage devices. - Includes contributions from today's most respected researchers who present the latest results for diamond growth, doping, device fabrication, theoretical modeling and device performance - Examines why diamond semiconductors could lead to superior power electronics - Discusses the main challenges to device realization and the best opportunities for the next generation of power electronics

Silicon Carbide Power Devices

Author : B. Jayant Baliga
Publisher : World Scientific
ISBN 13 : 9812774521
Total Pages : 526 pages
Book Rating : 4.8/5 (127 download)

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Book Synopsis Silicon Carbide Power Devices by : B. Jayant Baliga

Download or read book Silicon Carbide Power Devices written by B. Jayant Baliga and published by World Scientific. This book was released on 2006-01-05 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices. Sample Chapter(s). Chapter 1: Introduction (72 KB). Contents: Material Properties and Technology; Breakdown Voltage; PiN Rectifiers; Schottky Rectifiers; Shielded Schottky Rectifiers; Metal-Semiconductor Field Effect Transistors; The Baliga-Pair Configuration; Planar Power MOSFETs; Shielded Planar MOSFETs; Trench-Gate Power MOSFETs; Shielded Trendch-Gate MOSFETs; Charge Coupled Structures; Integral Diodes; Lateral High Voltage FETs; Synopsis. Readership: For practising engineers working on power devices, and as a supplementary textbook for a graduate level course on power devices.

Electronic Properties of Materials

Author : Rolf E. Hummel
Publisher : Springer Science & Business Media
ISBN 13 : 3662024241
Total Pages : 323 pages
Book Rating : 4.6/5 (62 download)

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Book Synopsis Electronic Properties of Materials by : Rolf E. Hummel

Download or read book Electronic Properties of Materials written by Rolf E. Hummel and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 323 pages. Available in PDF, EPUB and Kindle. Book excerpt: The present book on electrical, optical, magnetic and thermal properties of materials is in many aspects different from other introductory texts in solid state physics. First of all, this book is written for engineers, particularly materials and electrical engineers who want to gain a fundamental under standing of semiconductor devices, magnetic materials, lasers, alloys, etc. Second, it stresses concepts rather than mathematical formalism, which should make the presentation relatively easy to understand. Thus, this book provides a thorough preparation for advanced texts, monographs, or special ized journal articles. Third, this book is not an encyclopedia. The selection oftopics is restricted to material which is considered to be essential and which can be covered in a 15-week semester course. For those professors who want to teach a two-semester course, supplemental topics can be found which deepen the understanding. (These sections are marked by an asterisk [*]. ) Fourth, the present text leaves the teaching of crystallography, X-ray diffrac tion, diffusion, lattice defects, etc. , to those courses which specialize in these subjects. As a rule, engineering students learn this material at the beginning of their upper division curriculum. The reader is, however, reminded of some of these topics whenever the need arises. Fifth, this book is distinctly divided into five self-contained parts which may be read independently.

Advanced Silicon Carbide Devices and Processing

Author : Stephen Saddow
Publisher : BoD – Books on Demand
ISBN 13 : 9535121685
Total Pages : 260 pages
Book Rating : 4.5/5 (351 download)

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Book Synopsis Advanced Silicon Carbide Devices and Processing by : Stephen Saddow

Download or read book Advanced Silicon Carbide Devices and Processing written by Stephen Saddow and published by BoD – Books on Demand. This book was released on 2015-09-17 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the production of the first commercially available blue LED in the late 1980s, silicon carbide technology has grown into a billion-dollar industry world-wide in the area of solid-state lighting and power electronics. With this in mind we organized this book to bring to the attention of those well versed in SiC technology some new developments in the field with a particular emphasis on particularly promising technologies such as SiC-based solar cells and optoelectronics. We have balanced this with the more traditional subjects such as power electronics and some new developments in the improvement of the MOS system for SiC MOSFETS. Given the importance of advanced microsystems and sensors based on SiC, we also included a review on 3C-SiC for both microsystem and electronic applications.

International Aerospace Abstracts

Author :
Publisher :
ISBN 13 :
Total Pages : 920 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis International Aerospace Abstracts by :

Download or read book International Aerospace Abstracts written by and published by . This book was released on 1998 with total page 920 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Power GaN Devices

Author : Matteo Meneghini
Publisher : Springer
ISBN 13 : 3319431994
Total Pages : 383 pages
Book Rating : 4.3/5 (194 download)

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Book Synopsis Power GaN Devices by : Matteo Meneghini

Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.