Neutron Transmutation Doping in Hydrogenated Amorphous Silicon

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ISBN 13 :
Total Pages : 8 pages
Book Rating : 4.:/5 (125 download)

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Book Synopsis Neutron Transmutation Doping in Hydrogenated Amorphous Silicon by : H. Hamanaka

Download or read book Neutron Transmutation Doping in Hydrogenated Amorphous Silicon written by H. Hamanaka and published by . This book was released on 1984 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt: A neutron irradiation for thermal neutron flux density of 5 x 1011/cm2s and irradiation time of 10 hr was applied to hydrogenated amorphous silicon (a-Si:H). The density of 31P produced by the neutron transmutation doping (NTD) was estimated to be 1012/cm3. Dark and photo conductivities were measured before and after NTD in parallel with ESR measurements. The annealing behavior of the irradiation damage was studied up to the growth temperature of a-Si:H. Dark conductivity of the well-annealed NTD a-Si:H shows an activation type conduction above room temperature with activation energy of 0.69 eV.

Neutron Transmutation Doping of Semiconductor Materials

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Publisher : Springer Science & Business Media
ISBN 13 : 1461326958
Total Pages : 337 pages
Book Rating : 4.4/5 (613 download)

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Book Synopsis Neutron Transmutation Doping of Semiconductor Materials by : Robert D. Larrabee

Download or read book Neutron Transmutation Doping of Semiconductor Materials written by Robert D. Larrabee and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: viii The growing use of NTD silicon outside the U. S. A. motivated an interest in having the next NTD conference in Europe. Therefore, the Third International Conference on Neutron Transmutation-Doped Silicon was organized by Jens Guldberg and held in Copenhagen, Denmark on August 27-29, 1980. The papers presented at this conference reviewed the developments which occurred during the t'A'O years since the previous conference and included papers on irradiation technology, radiation-induced defects, characteriza tion of NTD silicon, and the use of NTD silicon for device appli cations. The proceedings of this conference were edited by Jens Guldberg and published by Plenum Press in 1981. Interest in, and commercial use of, NTD silicon continued to grow after the Third NTD Conference, and research into neutron trans mutation doping of nonsilicon semiconductors had begun to accel erate. The Fourth International Transmutation Doping Conference reported in this volume includes invited papers summarizing the present and anticipated future of NTD silicon, the processing and characterization of NTD silicon, and the use of NTD silicon in semiconductor power devices. In addition, four papers were pre sented on NTD of nonsilicon semiconductors, five papers on irra diation technology, three papers on practical utilization of NTD silicon, four papers on the characterization of NTD silicon, and five papers on neutron damage and annealing. These papers indi cate that irradiation technology for NTD silicon and its use by the power-device industry are approaching maturity.

Neutron Transmutation Doping in Semiconductors

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Publisher : Springer Science & Business Media
ISBN 13 : 1468482491
Total Pages : 368 pages
Book Rating : 4.4/5 (684 download)

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Book Synopsis Neutron Transmutation Doping in Semiconductors by : J. Meese

Download or read book Neutron Transmutation Doping in Semiconductors written by J. Meese and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the invited and contributed papers presented at the Second International Conference on Neutron Transmutation Doping in Semiconductors held April 23-26, 1978 at the University of Missouri-Columbia. The first "testing of the waters" symposium on this subject was organized by John Cleland and Dick Wood of the Solid-State Division of Oak Ridge National Laboratory in April of 1976, just one year after NTD-silicon appeared on the marketplace. Since this first meeting, NTD-silicon has become established as the starting material for the power device industry and reactor irradiations are now measured in tens of tons of material per annum making NTD processing the largest radiation effects technology in the semiconductor industry. Since the first conference at Oak Ridge, new applications and irradiation techniques have developed. Interest in a second con ference and in publishing the proceedings has been extremely high. The second conference at the University of Missouri was attended by 114 persons. Approximately 20% of the attendees came from countries outside the U.S.A. making the conference truly interna tional in scope.

Neutron Transmutation Doping of Silicon at Research Reactors

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ISBN 13 : 9789201300102
Total Pages : 95 pages
Book Rating : 4.3/5 (1 download)

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Book Synopsis Neutron Transmutation Doping of Silicon at Research Reactors by : International Atomic Energy Agency

Download or read book Neutron Transmutation Doping of Silicon at Research Reactors written by International Atomic Energy Agency and published by . This book was released on 2012 with total page 95 pages. Available in PDF, EPUB and Kindle. Book excerpt: This publication details the processes and history of neutron transmutation doping of silicon, particularly its commercial pathway, followed by the requirements for a technologically modern and economically viable production scheme and the current trends in the global market for semiconductor products. It should serve as guidelines on the technical requirements, involved processes and required quality standards for the transmission of sound practices and advice for research reactor managers and operators planning commercial scale production of silicon. Furthermore, a detailed and specific database of most of the worlds research reactor facilities in this domain is included, featuring their irradiation capabilities, associated production capacities and processing.

Fabrication of Silicon Microcircuits by Neutron Transmutation Doping

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ISBN 13 :
Total Pages : 160 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Fabrication of Silicon Microcircuits by Neutron Transmutation Doping by : Carl N. Klahr

Download or read book Fabrication of Silicon Microcircuits by Neutron Transmutation Doping written by Carl N. Klahr and published by . This book was released on 1966 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Neutron Transmutation Doping of Silicon for the Production of Radiation Detectors

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ISBN 13 : 9780642598714
Total Pages : 11 pages
Book Rating : 4.5/5 (987 download)

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Book Synopsis Neutron Transmutation Doping of Silicon for the Production of Radiation Detectors by : D. Alexiev

Download or read book Neutron Transmutation Doping of Silicon for the Production of Radiation Detectors written by D. Alexiev and published by . This book was released on 1987 with total page 11 pages. Available in PDF, EPUB and Kindle. Book excerpt:

N-type Doping of Hydrogenated Amorphous Silicon Using Tertiarybutylphosphine

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ISBN 13 :
Total Pages : 140 pages
Book Rating : 4.:/5 (255 download)

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Book Synopsis N-type Doping of Hydrogenated Amorphous Silicon Using Tertiarybutylphosphine by : Kevin David Gaughan

Download or read book N-type Doping of Hydrogenated Amorphous Silicon Using Tertiarybutylphosphine written by Kevin David Gaughan and published by . This book was released on 1992 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Neutron Transmutation Doping of Isotopically Enriched Silicon

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ISBN 13 :
Total Pages : 142 pages
Book Rating : 4.:/5 (35 download)

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Book Synopsis Neutron Transmutation Doping of Isotopically Enriched Silicon by : Christopher Yuan-Ting Liao

Download or read book Neutron Transmutation Doping of Isotopically Enriched Silicon written by Christopher Yuan-Ting Liao and published by . This book was released on 2006 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Semiconductor Processing

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Publisher : ASTM International
ISBN 13 : 9780803104037
Total Pages : 673 pages
Book Rating : 4.1/5 (4 download)

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Book Synopsis Semiconductor Processing by : Dinesh C. Gupta

Download or read book Semiconductor Processing written by Dinesh C. Gupta and published by ASTM International. This book was released on 1984 with total page 673 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Alchemy in the Modern Day

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ISBN 13 :
Total Pages : 51 pages
Book Rating : 4.:/5 (268 download)

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Book Synopsis Alchemy in the Modern Day by : Zachariah Nobel

Download or read book Alchemy in the Modern Day written by Zachariah Nobel and published by . This book was released on 1994 with total page 51 pages. Available in PDF, EPUB and Kindle. Book excerpt:

The Effects of Thermal Neutron Transmutation Doping in Silicon

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ISBN 13 :
Total Pages : 48 pages
Book Rating : 4.:/5 (498 download)

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Book Synopsis The Effects of Thermal Neutron Transmutation Doping in Silicon by : Charles R. Mandelbaum

Download or read book The Effects of Thermal Neutron Transmutation Doping in Silicon written by Charles R. Mandelbaum and published by . This book was released on 1966 with total page 48 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Neutron Transmutation Doping of Silicon

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ISBN 13 :
Total Pages : 218 pages
Book Rating : 4.:/5 (11 download)

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Book Synopsis Neutron Transmutation Doping of Silicon by : Gregory Ronald Cripps

Download or read book Neutron Transmutation Doping of Silicon written by Gregory Ronald Cripps and published by . This book was released on 1985 with total page 218 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Phosphorus and Boron Doping of Hydrogenated Amorphous Silicon

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ISBN 13 :
Total Pages : 139 pages
Book Rating : 4.:/5 (256 download)

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Book Synopsis Phosphorus and Boron Doping of Hydrogenated Amorphous Silicon by : Mathias J. Pruppers

Download or read book Phosphorus and Boron Doping of Hydrogenated Amorphous Silicon written by Mathias J. Pruppers and published by . This book was released on 1988 with total page 139 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Energy Research Abstracts

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ISBN 13 :
Total Pages : 752 pages
Book Rating : 4.:/5 (3 download)

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Book Synopsis Energy Research Abstracts by :

Download or read book Energy Research Abstracts written by and published by . This book was released on 1988 with total page 752 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Hydrogen in Disordered and Amorphous Solids

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Publisher : Springer
ISBN 13 : 1489920250
Total Pages : 426 pages
Book Rating : 4.4/5 (899 download)

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Book Synopsis Hydrogen in Disordered and Amorphous Solids by : Gust Bambakidis Jr.

Download or read book Hydrogen in Disordered and Amorphous Solids written by Gust Bambakidis Jr. and published by Springer. This book was released on 2013-12-19 with total page 426 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the second volume in the NATO ASI series dealing with the topic of hydrogen in solids. The first (V. B76, Metal Hydrides) appeared five years ago and focussed primarily on crystalline phases of hydrided metallic systems. In the intervening period, the amorphous solid state has become an area of intense research activity, encompassing both metallic and non-metallic, e.g. semiconducting, systems. At the same time the problem of storage of hydrogen, which motivated the first ASI, continues to be important. In the case of metallic systems, there were early indications that metallic glasses and disordered alloys may be more corrosion resistant, less susceptible to embrittlement by hydrogen and have a higher hydrogen mobility than ordered metals or intermetallics. All of these properties are desirable for hydrogen storage. Subsequent research has shown that thermodynamic instability is a severe problem in many amorphous metal hydrides. The present ASI has provided an appropriate forum to focus on these issues.

Doping Effects in Hydrogenated Amorphous Silicon Solar Cells

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ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (599 download)

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Book Synopsis Doping Effects in Hydrogenated Amorphous Silicon Solar Cells by : R. F. Thompson

Download or read book Doping Effects in Hydrogenated Amorphous Silicon Solar Cells written by R. F. Thompson and published by . This book was released on 1985 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Neutron-Transmutation-Doped Silicon

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Publisher : Springer
ISBN 13 : 9780306407383
Total Pages : 0 pages
Book Rating : 4.4/5 (73 download)

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Book Synopsis Neutron-Transmutation-Doped Silicon by : Jens Guldberg

Download or read book Neutron-Transmutation-Doped Silicon written by Jens Guldberg and published by Springer. This book was released on 1981-12-01 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the papers presented at the Third International Conference on Neutron Transmutation Doping of Silicon held in Copenhagen on August 27-29, 1980. The first symposium associated with neutron transmutation doping technology as such was arranged in 1976 at Oak Ridge National Laboratory by John Cleland. At this time it had become clear that the technology could be implemented on a commercial scale and that several types of power devices in the electronic industry would benefit from employing neutron transmutation doped silicon in the fabrication proces's'. Two years later the Second International Conference on Neutron Transmutation Doping of Semiconductors was arranged at the University of Missouri, Columbia, by Jon Meese. On this occasion the various aspects of silicon fabrication were reviewed, including irradiation control, radiation induced defects, device optimization, and possible benefits of irradiating other semiconductor compounds. In view of the now wide spread acceptance of neutron doped silicon in the power device industry the present conference was largely directed towards the current status of transmutation doping of silicon. Accordingly, the scope of the three day confe rence was to review developments in the technology which had occurred during the two years which had passed since the previous conference. In addition, brief accounts were given with respect to other semiconducting compounds and emerging irradiation techniques which may impact on device design principles in the future.