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Nanocrystalline And Amorphous Silicon Thin Film Transistors Deposited By Microwave Plasma Electron Cyclotron Resonance Chemical Vapor Deposition
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Book Synopsis Nanocrystalline and Amorphous Silicon Thin Film Transistors Deposited by Microwave Plasma Electron Cyclotron Resonance Chemical Vapor Deposition by : Lihong Teng
Download or read book Nanocrystalline and Amorphous Silicon Thin Film Transistors Deposited by Microwave Plasma Electron Cyclotron Resonance Chemical Vapor Deposition written by Lihong Teng and published by . This book was released on 2003 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Microwave Plasma CVD of Silicon Nanocrystalline and Amorphous Silicon as a Function of Deposition Conditions by : J. H. Jeung
Download or read book Microwave Plasma CVD of Silicon Nanocrystalline and Amorphous Silicon as a Function of Deposition Conditions written by J. H. Jeung and published by . This book was released on 2001 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt: Using ECR-CVD (electron cyclotron resonance-chemical vapor deposition), we can make amorphous-silicon (a-Si) and nanocrystalline (nc-Si) thin films. We are looking forward to improve the photo/dark conductivity ratio (sigma(sub p)/sigma(sub d)) by measuring the photo and dark current-voltage (I-V). In the ECR deposition, there are several factors which we can control and adjust for improved results, such as the amounts of silane and argon, the vacuum, and the temperature of the substrate. These become the critical factors for ECR deposition in order to make better films. Input gases consist of Ar, 2%SiH4 in He and H2. In the process, SiH4 is decomposed into SiH(x). A residual gas analyzer (RGA) gives composition in the plasma. Because Ar possibly etches the substrate and Si is to be deposited, the best RGA signal is obtained with low Ar content. This work serves to correlate process conditions, RGA signals and electrical data. The best RGA signal occurs for 5 mTorr Ar, 60 mTorr SiH4:He, and power of 600 W. Best value of dark conductivity (Q sub d)) was 1.53 x 10(exp -9) S/cm and 1.58 x 10(exp 5) S/cm for photo conductivity (sigma (sub p)) High value of sigma(sub p) and low value of sigma(sub d) indicate material with fewer defects. Adding extra H2. improves the photo-conductivity (sigma(sub p)) Applications of these films are heterojunction solar cells and thin film transistors. The heterojunction solar cell had a structure of metal grid/500 deg. A of a Si:H/p-Si wafer/Ohmic contact. These cells gave an open circuit voltage (V) = 0.51(V) and short circuit current density (J(sub sc)) = 5.5 mA/sq cm under 50 mW/sq cm tungsten halogen lamp. Thin film transistors using nc-Si, with gate length/width (L/W) = 450/65 gave field effect mobility of 18 sq cm/V-s, and Ion/Ioff of 1.25 x 10(exp 5).
Book Synopsis Microcrystalline and Nanocrystalline Semiconductors by :
Download or read book Microcrystalline and Nanocrystalline Semiconductors written by and published by . This book was released on 2001 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Proceedings of the Third Symposium on Thin Film Transistor Technologies by : Yue Kuo
Download or read book Proceedings of the Third Symposium on Thin Film Transistor Technologies written by Yue Kuo and published by The Electrochemical Society. This book was released on 1997 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Nanophase and Nanocomposite Materials IV: Volume 703 by : Sridhar Komarneni
Download or read book Nanophase and Nanocomposite Materials IV: Volume 703 written by Sridhar Komarneni and published by . This book was released on 2002-04 with total page 624 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Book Synopsis Microcrystalline and Nanocrystalline Semiconductors - 1998: Volume 536 by : Leigh T. Canham
Download or read book Microcrystalline and Nanocrystalline Semiconductors - 1998: Volume 536 written by Leigh T. Canham and published by . This book was released on 1999-04 with total page 600 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This volume was first published in 1999.
Book Synopsis Thin Film Transistors: Amorphous silicon thin film transistors by : Yue Kuo
Download or read book Thin Film Transistors: Amorphous silicon thin film transistors written by Yue Kuo and published by Kluwer Academic Pub. This book was released on 2004 with total page 511 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first reference on amorphous silicon and polycrystalline silicon thin film transistors that gives a systematic global review of all major topics in the field. These volumes include sections on basic materials and substrates properties, fundamental device physics, critical fabrication processes (structures, a-Si: H, dielectric, metallization, catalytic CVD), and existing and new applications. The chapters are written by leading researchers who have extensive experience with reputed track records. Thin Film Transistors provides practical information on preparing individual functional a-Si: H TFTs and poly-Si TFTs as well as large-area TFT arrays. Also covered are basic theories on the a-Si: H TFT operations and unique material characteristics. Readers are also exposed to a wide range of existing and new applications in industries.
Book Synopsis Polycrystalline Silicon Thin-film Transistor Technology for Flexible Large-area Electronics by : Yeh-Jiun Tung
Download or read book Polycrystalline Silicon Thin-film Transistor Technology for Flexible Large-area Electronics written by Yeh-Jiun Tung and published by . This book was released on 2001 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Amorphous and Nanocrystalline Silicon Science and Technology ... by :
Download or read book Amorphous and Nanocrystalline Silicon Science and Technology ... written by and published by . This book was released on 2005 with total page 760 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Thin Film Transistor Technologies V by : Yue Kuo
Download or read book Thin Film Transistor Technologies V written by Yue Kuo and published by The Electrochemical Society. This book was released on 2001 with total page 356 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Design and Development of Nanocrystalline Silicon Thin Film Transistors by : Jarrod McDonald
Download or read book The Design and Development of Nanocrystalline Silicon Thin Film Transistors written by Jarrod McDonald and published by . This book was released on 2004 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work reports on the fabrication of thin film transistor devices at low temperatures using hydrogenated-nanocrystalline silicon (nc-Si:H). Nanocrystalline silicon is a new electronic material, which is capable of being deposited at low temperatures on any substrate, and thus offers the possibility of making large area devices on flexible substrates. This work presents a design and process for fabricating 25 [mu]m length n-channel, top gate, thin film transistors. The TFTs were fabricated using hydrogenated-nanocrystalline silicon (nc-Si:H), deposited by plasma enhanced chemical vapor deposition (PECVD) over a thermally oxidized silicon wafer. The deposition was done at a temperature of 300°C. Metal layers were deposited by thermal evaporation and etching steps were done via dry etching in a reactive ion etching system and by wet etching. Silicon nitride, deposited by PECVD at 300°C, was used as the dielectric material in the TFT. MIS capacitors were made to judge the quality of the silicon nitride/nc-Si:H interface, and interface defect densities were measured using capacitance-voltage techniques. It was found that an interface defect density of approximately 4.55x1011 cm−1eV−1 was achievable with hydrogen passivation. MIM capacitors were made to determine the dielectric breakdown of the material. The silicon nitride layer broke down at an electric field of 4 MV/cm. The transistors tested have shown a threshold voltage (V[subscript TH])[nearly equal to]13.3 volts, a channel surface mobility (u)[nearly equal to].2 cm2/[V·sec] and an on-off ratio of [nearly equal to]103.
Book Synopsis Dissertation Abstracts International by :
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2004 with total page 772 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electrical & Electronics Abstracts by :
Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 1860 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Advances in Microcrystalline and Nanocrystalline: Volume 452 by : Robert W. Collins
Download or read book Advances in Microcrystalline and Nanocrystalline: Volume 452 written by Robert W. Collins and published by . This book was released on 1997-03-13 with total page 1098 pages. Available in PDF, EPUB and Kindle. Book excerpt: Proceedings of the December 1996 symposium. Contains 159 papers which describe materials advances involving stuctures spanning more than five orders of magnitude in size--from Group IV molecular clusters to single-crystal grains large enough for fabrication of thin-film transistors within their boundaries. Sections cover topics such as the theory of semiconductor molecular clusters and nanocrystals; luminescent Group IV clusters/nanocrystals and quantum wells; semiconductor systems confined in three and one dimensions; Group III- V, Group II-VI, and metal sulfide, iodide, and oxide nanocrystals; porous silicon; applications of nanocrystal and porous semiconductors; light-emitting properties and applications of porous Si; and research results on the nano-, micro-, and polycrystalline thin films. Annotation copyrighted by Book News, Inc., Portland, OR
Book Synopsis Proceedings of the Second Symposium on Thin Film Transistor Technologies by : Yue Kuo
Download or read book Proceedings of the Second Symposium on Thin Film Transistor Technologies written by Yue Kuo and published by The Electrochemical Society. This book was released on 1995 with total page 428 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Nanocrystalline Silicon Thin Film Transistor by : Mohammad-Reza Esmaeili-Rad
Download or read book Nanocrystalline Silicon Thin Film Transistor written by Mohammad-Reza Esmaeili-Rad and published by . This book was released on 2008 with total page 131 pages. Available in PDF, EPUB and Kindle. Book excerpt: Hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT) has been used in active matrix liquid crystal displays (LCDs) and medical x-ray imagers, in which the TFT acts as pixel switches. However, instability of a-Si:H TFT is a major issue in applications where TFTs are also required to function as analogue circuit elements, such as in emerging organic light emitting diode (OLED) displays. It is known that a-Si:H TFT shows drain current degradation under electrical operation, due to two instability mechanisms: (i) defect creation in the a-Si:H active layer, and (ii) charge trapping in the gate dielectric. Nanocrystalline silicon (nc-Si) TFT has been proposed as a high performance alternative. Therefore, this thesis focuses on the design of nc-Si TFT and its outstanding issues, in the industry standard bottom-gate structure. The key for obtaining a stable TFT lies in developing a highly crystalline nc-Si active layer, without the so-called amorphous incubation layer. Therefore, processing of nc-Si by plasma enhanced chemical vapor deposition (PECVD) is studied and PECVD parameters are optimized.
Book Synopsis Ceramic Abstracts by : American Ceramic Society
Download or read book Ceramic Abstracts written by American Ceramic Society and published by . This book was released on 1995 with total page 1150 pages. Available in PDF, EPUB and Kindle. Book excerpt:
