Monte Carlo Studies of Nonlinear Electron Transport in III-V Semiconductors

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ISBN 13 :
Total Pages : 254 pages
Book Rating : 4.:/5 (22 download)

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Book Synopsis Monte Carlo Studies of Nonlinear Electron Transport in III-V Semiconductors by : Ki Wook Kim

Download or read book Monte Carlo Studies of Nonlinear Electron Transport in III-V Semiconductors written by Ki Wook Kim and published by . This book was released on 1988 with total page 254 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electron transport in III-V semiconductors, especially the Ga/As/AlGaAs material systems, is studied in various nonequilibrium situations. Throughout the study, a Monte Carlo simulation method is used for the analysis of transport properties in the semiclassical Boltzmann transport picture. The present work essentially consists of two aspects. The first topic is hot electron transport in GaAs, focusing on the electron impact ionization effects. The dependence of impact ionization rates on the details of the band structure is investigated by using two (local and nonlocal) pseudopotential methods. The spatial evolution of the ionization rate and the average electron energy are studied in nonuniform fields characteristic of p+-n junctions. The effects of field fluctuations due to the random distribution of dopants are studied as well. The possibility of new GaAs electron-emitting diodes is explored numerically and compared with the corresponding Si devices. The second aspect deals with the effects of conduction band discontinuities on the electron transport. In particular, one-dimensional heterostructures are modeled to study the nonlinear transport across heterointerfaces. (RH).

Monte Carlo Studies of the Electron Transport in III-V Semiconductors and Semiconductor Devices

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ISBN 13 :
Total Pages : 328 pages
Book Rating : 4.:/5 (14 download)

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Book Synopsis Monte Carlo Studies of the Electron Transport in III-V Semiconductors and Semiconductor Devices by : Charles Kenneth Williams

Download or read book Monte Carlo Studies of the Electron Transport in III-V Semiconductors and Semiconductor Devices written by Charles Kenneth Williams and published by . This book was released on 1982 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Monte Carlo Studies of Electron Transport in III-V Semiconductor Heterostructures

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ISBN 13 :
Total Pages : 79 pages
Book Rating : 4.:/5 (222 download)

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Book Synopsis Monte Carlo Studies of Electron Transport in III-V Semiconductor Heterostructures by : Martin E. Klausmeier-Brown

Download or read book Monte Carlo Studies of Electron Transport in III-V Semiconductor Heterostructures written by Martin E. Klausmeier-Brown and published by . This book was released on 1986 with total page 79 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Monte Carlo Studies of Electron Transport in Semiconductor Nanostructures

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ISBN 13 :
Total Pages : 108 pages
Book Rating : 4.:/5 (824 download)

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Book Synopsis Monte Carlo Studies of Electron Transport in Semiconductor Nanostructures by : Brian David Tierney

Download or read book Monte Carlo Studies of Electron Transport in Semiconductor Nanostructures written by Brian David Tierney and published by . This book was released on 2011 with total page 108 pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT An Ensemble Monte Carlo (EMC) computer code has been developed to simulate, semi-classically, spin-dependent electron transport in quasi two-dimensional (2D) III-V semiconductors. The code accounts for both three-dimensional (3D) and quasi-2D transport, utilizing either 3D or 2D scattering mechanisms, as appropriate. Phonon, alloy, interface roughness, and impurity scattering mechanisms are included, accounting for the Pauli Exclusion Principle via a rejection algorithm. The 2D carrier states are calculated via a self-consistent 1D Schrödinger-3D-Poisson solution in which the charge distribution of the 2D carriers in the quantization direction is taken as the spatial distribution of the squared envelope functions within the Hartree approximation. The wavefunctions, subband energies, and 2D scattering rates are updated periodically by solving a series of 1D Schrödinger wave equations (SWE) over the real-space domain of the device at fixed time intervals. The electrostatic potential is updated by periodically solving the 3D Poisson equation. Spin-polarized transport is modeled via a spin density-matrix formalism that accounts for D'yakanov-Perel (DP) scattering. Also, the code allows for the easy inclusion of additional scattering mechanisms and structural modifications to devices. As an application of the simulator, the current voltage characteristics of an InGaAs/InAlAs HEMT are simulated, corresponding to nanoscale III-V HEMTs currently being fabricated by Intel Corporation. The comparative effects of various scattering parameters, material properties and structural attributes are investigated and compared with experiments where reasonable agreement is obtained. The spatial evolution of spin-polarized carriers in prototypical Spin Field Effect Transistor (SpinFET) devices is then simulated. Studies of the spin coherence times in quasi-2D structures is first investigated and compared to experimental results. It is found that the simulated spin coherence times for GaAs structures are in reasonable agreement with experiment. The SpinFET structure studied is a scaled-down version of the InGaAs/InAlAs HEMT discussed in this work, in which spin-polarized carriers are injected at the source, and the coherence length is studied as a function of gate voltage via the Rashba effect.

Monte Carlo Device Simulator for Electron Transport in III-V Semiconductors

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ISBN 13 :
Total Pages : 200 pages
Book Rating : 4.:/5 (969 download)

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Book Synopsis Monte Carlo Device Simulator for Electron Transport in III-V Semiconductors by : Sidney Chee Mun Ng

Download or read book Monte Carlo Device Simulator for Electron Transport in III-V Semiconductors written by Sidney Chee Mun Ng and published by . This book was released on 1993 with total page 200 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Advanced Physics of Electron Transport in Semiconductors and Nanostructures

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Publisher : Springer
ISBN 13 : 3319011014
Total Pages : 481 pages
Book Rating : 4.3/5 (19 download)

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Book Synopsis Advanced Physics of Electron Transport in Semiconductors and Nanostructures by : Massimo V. Fischetti

Download or read book Advanced Physics of Electron Transport in Semiconductors and Nanostructures written by Massimo V. Fischetti and published by Springer. This book was released on 2016-05-20 with total page 481 pages. Available in PDF, EPUB and Kindle. Book excerpt: This textbook is aimed at second-year graduate students in Physics, Electrical Engineering, or Materials Science. It presents a rigorous introduction to electronic transport in solids, especially at the nanometer scale.Understanding electronic transport in solids requires some basic knowledge of Hamiltonian Classical Mechanics, Quantum Mechanics, Condensed Matter Theory, and Statistical Mechanics. Hence, this book discusses those sub-topics which are required to deal with electronic transport in a single, self-contained course. This will be useful for students who intend to work in academia or the nano/ micro-electronics industry.Further topics covered include: the theory of energy bands in crystals, of second quantization and elementary excitations in solids, of the dielectric properties of semiconductors with an emphasis on dielectric screening and coupled interfacial modes, of electron scattering with phonons, plasmons, electrons and photons, of the derivation of transport equations in semiconductors and semiconductor nanostructures somewhat at the quantum level, but mainly at the semi-classical level. The text presents examples relevant to current research, thus not only about Si, but also about III-V compound semiconductors, nanowires, graphene and graphene nanoribbons. In particular, the text gives major emphasis to plane-wave methods applied to the electronic structure of solids, both DFT and empirical pseudopotentials, always paying attention to their effects on electronic transport and its numerical treatment. The core of the text is electronic transport, with ample discussions of the transport equations derived both in the quantum picture (the Liouville-von Neumann equation) and semi-classically (the Boltzmann transport equation, BTE). An advanced chapter, Chapter 18, is strictly related to the ‘tricky’ transition from the time-reversible Liouville-von Neumann equation to the time-irreversible Green’s functions, to the density-matrix formalism and, classically, to the Boltzmann transport equation. Finally, several methods for solving the BTE are also reviewed, including the method of moments, iterative methods, direct matrix inversion, Cellular Automata and Monte Carlo. Four appendices complete the text.

Device Modeling Based on Monte Carlo Simulation of Electron Transport in Group III-nitride Semiconductors

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ISBN 13 :
Total Pages : 508 pages
Book Rating : 4.:/5 (319 download)

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Book Synopsis Device Modeling Based on Monte Carlo Simulation of Electron Transport in Group III-nitride Semiconductors by : John David Albrecht

Download or read book Device Modeling Based on Monte Carlo Simulation of Electron Transport in Group III-nitride Semiconductors written by John David Albrecht and published by . This book was released on 1999 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Physics of Nonlinear Transport in Semiconductors

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Publisher : Springer Science & Business Media
ISBN 13 : 1468436384
Total Pages : 620 pages
Book Rating : 4.4/5 (684 download)

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Book Synopsis Physics of Nonlinear Transport in Semiconductors by : David K. Ferry

Download or read book Physics of Nonlinear Transport in Semiconductors written by David K. Ferry and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 620 pages. Available in PDF, EPUB and Kindle. Book excerpt: The area of high field transport in semiconductors has been of interest since the early studies of dielectric breakdown in various materials. It really emerged as a sub-discipline of semiconductor physics in the early 1960's, following the discovery of substantial deviations from Ohm's law at high electric fields. Since that time, it has become a major area of importance in solid state electronics as semiconductor devices have operated at higher frequencies and higher powers. It has become apparent since the Modena Conference on Hot Electrons in 1973, that the area of hot electrons has ex tended weIl beyond the concept of semi-classical electrons (or holes) in homogeneous semiconductor materials. This was exemplified by the broad range of papers presented at the International Conference on Hot Electrons in Semiconductors, held in Denton, Texas, in 1977. Hot electron physics has progressed from a limited phenomeno logical science to a full-fledged experimental and precision theo retical science. The conceptual base and subsequent applications have been widened and underpinned by the development of ab initio nonlinear quantum transport theory which complements and identifies the limitations of the traditional semi-classical Boltzmann-Bloch picture. Such diverse areas as large polarons, pico-second laser excitation, quantum magneto-transport, sub-three dimensional systems, and of course device dynamics all have been shown to be strongly interactive with more classical hot electron pictures.

Monte Carlo Transport of Electrons and Photons

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Publisher : Springer Science & Business Media
ISBN 13 : 1461310598
Total Pages : 637 pages
Book Rating : 4.4/5 (613 download)

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Book Synopsis Monte Carlo Transport of Electrons and Photons by : T.M. Jenkins

Download or read book Monte Carlo Transport of Electrons and Photons written by T.M. Jenkins and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 637 pages. Available in PDF, EPUB and Kindle. Book excerpt: For ten days at the end of September, 1987, a group of about 75 scientists from 21 different countries gathered in a restored monastery on a 750 meter high piece of rock jutting out of the Mediterranean Sea to discuss the simulation of the transport of electrons and photons using Monte Carlo techniques. When we first had the idea for this meeting, Ralph Nelson, who had organized a previous course at the "Ettore Majorana" Centre for Scientific Culture, suggested that Erice would be the ideal place for such a meeting. Nahum, Nelson and Rogers became Co-Directors of the Course, with the help of Alessandro Rindi, the Director of the School of Radiation Damage and Protection, and Professor Antonino Zichichi, Director of the "Ettore Majorana" Centre. The course was an outstanding success, both scientifically and socially, and those at the meeting will carry the marks of having attended, both intellectually and on a personal level where many friendships were made. The scientific content of the course was at a very high caliber, both because of the hard work done by all the lecturers in preparing their lectures (e. g. , complete copies of each lecture were available at the beginning of the course) and because of the high quality of the "students", many of whom were accomplished experts in the field. The outstanding facilities of the Centre contributed greatly to the success. This volume contains the formal record of the course lectures.

Monte Carlo Method for Simulation of Electron Transport in Semiconductors

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ISBN 13 :
Total Pages : 478 pages
Book Rating : 4.:/5 (26 download)

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Book Synopsis Monte Carlo Method for Simulation of Electron Transport in Semiconductors by : Joel Reuben Phillips

Download or read book Monte Carlo Method for Simulation of Electron Transport in Semiconductors written by Joel Reuben Phillips and published by . This book was released on 1991 with total page 478 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Theory of Electron Transport in Semiconductors

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Publisher : Springer Science & Business Media
ISBN 13 : 3642105866
Total Pages : 590 pages
Book Rating : 4.6/5 (421 download)

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Book Synopsis Theory of Electron Transport in Semiconductors by : Carlo Jacoboni

Download or read book Theory of Electron Transport in Semiconductors written by Carlo Jacoboni and published by Springer Science & Business Media. This book was released on 2010-09-05 with total page 590 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book originated out of a desire to provide students with an instrument which might lead them from knowledge of elementary classical and quantum physics to moderntheoreticaltechniques for the analysisof electrontransport in semiconductors. The book is basically a textbook for students of physics, material science, and electronics. Rather than a monograph on detailed advanced research in a speci?c area, it intends to introduce the reader to the fascinating ?eld of electron dynamics in semiconductors, a ?eld that, through its applications to electronics, greatly contributed to the transformationof all our lives in the second half of the twentieth century, and continues to provide surprises and new challenges. The ?eld is so extensive that it has been necessary to leave aside many subjects, while others could be dealt with only in terms of their basic principles. The book is divided into ?ve major parts. Part I moves from a survey of the fundamentals of classical and quantum physics to a brief review of basic semiconductor physics. Its purpose is to establish a common platform of language and symbols, and to make the entire treatment, as far as pos- ble, self-contained. Parts II and III, respectively, develop transport theory in bulk semiconductors in semiclassical and quantum frames. Part IV is devoted to semiconductor structures, including devices and mesoscopic coherent s- tems. Finally, Part V develops the basic theoretical tools of transport theory within the modern nonequilibrium Green-function formulation, starting from an introduction to second-quantization formalism.

Scientific and Technical Aerospace Reports

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ISBN 13 :
Total Pages : 702 pages
Book Rating : 4.:/5 (31 download)

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Book Synopsis Scientific and Technical Aerospace Reports by :

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:

A Monte Carlo Analysis of Electron Transport in Surface Channels in InP

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ISBN 13 :
Total Pages : 342 pages
Book Rating : 4.:/5 (85 download)

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Book Synopsis A Monte Carlo Analysis of Electron Transport in Surface Channels in InP by : Glenn R. Bailey

Download or read book A Monte Carlo Analysis of Electron Transport in Surface Channels in InP written by Glenn R. Bailey and published by . This book was released on 1988 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt:

The Monte Carlo Method for Semiconductor Device Simulation

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Publisher : Springer Science & Business Media
ISBN 13 : 3709169631
Total Pages : 370 pages
Book Rating : 4.7/5 (91 download)

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Book Synopsis The Monte Carlo Method for Semiconductor Device Simulation by : Carlo Jacoboni

Download or read book The Monte Carlo Method for Semiconductor Device Simulation written by Carlo Jacoboni and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume presents the application of the Monte Carlo method to the simulation of semiconductor devices, reviewing the physics of transport in semiconductors, followed by an introduction to the physics of semiconductor devices.

Monte Carlo Device Simulation

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Publisher : Springer Science & Business Media
ISBN 13 : 1461540267
Total Pages : 317 pages
Book Rating : 4.4/5 (615 download)

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Book Synopsis Monte Carlo Device Simulation by : Karl Hess

Download or read book Monte Carlo Device Simulation written by Karl Hess and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 317 pages. Available in PDF, EPUB and Kindle. Book excerpt: Monte Carlo simulation is now a well established method for studying semiconductor devices and is particularly well suited to highlighting physical mechanisms and exploring material properties. Not surprisingly, the more completely the material properties are built into the simulation, up to and including the use of a full band structure, the more powerful is the method. Indeed, it is now becoming increasingly clear that phenomena such as reliabil ity related hot-electron effects in MOSFETs cannot be understood satisfac torily without using full band Monte Carlo. The IBM simulator DAMOCLES, therefore, represents a landmark of great significance. DAMOCLES sums up the total of Monte Carlo device modeling experience of the past, and reaches with its capabilities and opportunities into the distant future. This book, therefore, begins with a description of the IBM simulator. The second chapter gives an advanced introduction to the physical basis for Monte Carlo simulations and an outlook on why complex effects such as collisional broadening and intracollisional field effects can be important and how they can be included in the simulations. References to more basic intro the book. The third chapter ductory material can be found throughout describes a typical relationship of Monte Carlo simulations to experimental data and indicates a major difficulty, the vast number of deformation poten tials required to simulate transport throughout the entire Brillouin zone. The fourth chapter addresses possible further extensions of the Monte Carlo approach and subtleties of the electron-electron interaction.

Research in Progress

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ISBN 13 :
Total Pages : 310 pages
Book Rating : 4.:/5 (31 download)

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Book Synopsis Research in Progress by :

Download or read book Research in Progress written by and published by . This book was released on 1982 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Estimators in Monte Carlo Semiconductor Electron Transport Simulations

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ISBN 13 :
Total Pages : 62 pages
Book Rating : 4.:/5 (15 download)

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Book Synopsis Estimators in Monte Carlo Semiconductor Electron Transport Simulations by : Daniel William Bailey

Download or read book Estimators in Monte Carlo Semiconductor Electron Transport Simulations written by Daniel William Bailey and published by . This book was released on 1986 with total page 62 pages. Available in PDF, EPUB and Kindle. Book excerpt: