Monte Carlo Studies Of Electron Transport In Semiconductor Nanostructures

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Monte Carlo Studies of Electron Transport in Semiconductor Nanostructures

Author : Brian David Tierney
Publisher :
ISBN 13 :
Total Pages : 108 pages
Book Rating : 4.:/5 (824 download)

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Book Synopsis Monte Carlo Studies of Electron Transport in Semiconductor Nanostructures by : Brian David Tierney

Download or read book Monte Carlo Studies of Electron Transport in Semiconductor Nanostructures written by Brian David Tierney and published by . This book was released on 2011 with total page 108 pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT An Ensemble Monte Carlo (EMC) computer code has been developed to simulate, semi-classically, spin-dependent electron transport in quasi two-dimensional (2D) III-V semiconductors. The code accounts for both three-dimensional (3D) and quasi-2D transport, utilizing either 3D or 2D scattering mechanisms, as appropriate. Phonon, alloy, interface roughness, and impurity scattering mechanisms are included, accounting for the Pauli Exclusion Principle via a rejection algorithm. The 2D carrier states are calculated via a self-consistent 1D Schrödinger-3D-Poisson solution in which the charge distribution of the 2D carriers in the quantization direction is taken as the spatial distribution of the squared envelope functions within the Hartree approximation. The wavefunctions, subband energies, and 2D scattering rates are updated periodically by solving a series of 1D Schrödinger wave equations (SWE) over the real-space domain of the device at fixed time intervals. The electrostatic potential is updated by periodically solving the 3D Poisson equation. Spin-polarized transport is modeled via a spin density-matrix formalism that accounts for D'yakanov-Perel (DP) scattering. Also, the code allows for the easy inclusion of additional scattering mechanisms and structural modifications to devices. As an application of the simulator, the current voltage characteristics of an InGaAs/InAlAs HEMT are simulated, corresponding to nanoscale III-V HEMTs currently being fabricated by Intel Corporation. The comparative effects of various scattering parameters, material properties and structural attributes are investigated and compared with experiments where reasonable agreement is obtained. The spatial evolution of spin-polarized carriers in prototypical Spin Field Effect Transistor (SpinFET) devices is then simulated. Studies of the spin coherence times in quasi-2D structures is first investigated and compared to experimental results. It is found that the simulated spin coherence times for GaAs structures are in reasonable agreement with experiment. The SpinFET structure studied is a scaled-down version of the InGaAs/InAlAs HEMT discussed in this work, in which spin-polarized carriers are injected at the source, and the coherence length is studied as a function of gate voltage via the Rashba effect.

Advanced Physics of Electron Transport in Semiconductors and Nanostructures

Author : Massimo V. Fischetti
Publisher : Springer
ISBN 13 : 3319011014
Total Pages : 481 pages
Book Rating : 4.3/5 (19 download)

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Book Synopsis Advanced Physics of Electron Transport in Semiconductors and Nanostructures by : Massimo V. Fischetti

Download or read book Advanced Physics of Electron Transport in Semiconductors and Nanostructures written by Massimo V. Fischetti and published by Springer. This book was released on 2016-05-20 with total page 481 pages. Available in PDF, EPUB and Kindle. Book excerpt: This textbook is aimed at second-year graduate students in Physics, Electrical Engineering, or Materials Science. It presents a rigorous introduction to electronic transport in solids, especially at the nanometer scale.Understanding electronic transport in solids requires some basic knowledge of Hamiltonian Classical Mechanics, Quantum Mechanics, Condensed Matter Theory, and Statistical Mechanics. Hence, this book discusses those sub-topics which are required to deal with electronic transport in a single, self-contained course. This will be useful for students who intend to work in academia or the nano/ micro-electronics industry.Further topics covered include: the theory of energy bands in crystals, of second quantization and elementary excitations in solids, of the dielectric properties of semiconductors with an emphasis on dielectric screening and coupled interfacial modes, of electron scattering with phonons, plasmons, electrons and photons, of the derivation of transport equations in semiconductors and semiconductor nanostructures somewhat at the quantum level, but mainly at the semi-classical level. The text presents examples relevant to current research, thus not only about Si, but also about III-V compound semiconductors, nanowires, graphene and graphene nanoribbons. In particular, the text gives major emphasis to plane-wave methods applied to the electronic structure of solids, both DFT and empirical pseudopotentials, always paying attention to their effects on electronic transport and its numerical treatment. The core of the text is electronic transport, with ample discussions of the transport equations derived both in the quantum picture (the Liouville-von Neumann equation) and semi-classically (the Boltzmann transport equation, BTE). An advanced chapter, Chapter 18, is strictly related to the ‘tricky’ transition from the time-reversible Liouville-von Neumann equation to the time-irreversible Green’s functions, to the density-matrix formalism and, classically, to the Boltzmann transport equation. Finally, several methods for solving the BTE are also reviewed, including the method of moments, iterative methods, direct matrix inversion, Cellular Automata and Monte Carlo. Four appendices complete the text.

Monte Carlo Studies of Electron Transport in III-V Semiconductor Heterostructures

Author : Martin E. Klausmeier-Brown
Publisher :
ISBN 13 :
Total Pages : 79 pages
Book Rating : 4.:/5 (222 download)

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Book Synopsis Monte Carlo Studies of Electron Transport in III-V Semiconductor Heterostructures by : Martin E. Klausmeier-Brown

Download or read book Monte Carlo Studies of Electron Transport in III-V Semiconductor Heterostructures written by Martin E. Klausmeier-Brown and published by . This book was released on 1986 with total page 79 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Stochastic Approaches to Electron Transport in Micro- and Nanostructures

Author : Mihail Nedjalkov
Publisher : Springer Nature
ISBN 13 : 3030679179
Total Pages : 214 pages
Book Rating : 4.0/5 (36 download)

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Book Synopsis Stochastic Approaches to Electron Transport in Micro- and Nanostructures by : Mihail Nedjalkov

Download or read book Stochastic Approaches to Electron Transport in Micro- and Nanostructures written by Mihail Nedjalkov and published by Springer Nature. This book was released on 2021-04-05 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book serves as a synergistic link between the development of mathematical models and the emergence of stochastic (Monte Carlo) methods applied for the simulation of current transport in electronic devices. Regarding the models, the historical evolution path, beginning from the classical charge carrier transport models for microelectronics to current quantum-based nanoelectronics, is explicatively followed. Accordingly, the solution methods are elucidated from the early phenomenological single particle algorithms applicable for stationary homogeneous physical conditions up to the complex algorithms required for quantum transport, based on particle generation and annihilation. The book fills the gap between monographs focusing on the development of the theory and the physical aspects of models, their application, and their solution methods and monographs dealing with the purely theoretical approaches for finding stochastic solutions of Fredholm integral equations.

Monte Carlo Studies of the Electron Transport in III-V Semiconductors and Semiconductor Devices

Author : Charles Kenneth Williams
Publisher :
ISBN 13 :
Total Pages : 328 pages
Book Rating : 4.:/5 (14 download)

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Book Synopsis Monte Carlo Studies of the Electron Transport in III-V Semiconductors and Semiconductor Devices by : Charles Kenneth Williams

Download or read book Monte Carlo Studies of the Electron Transport in III-V Semiconductors and Semiconductor Devices written by Charles Kenneth Williams and published by . This book was released on 1982 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Theory of Transport Properties of Semiconductor Nanostructures

Author : Eckehard Schöll
Publisher : Springer Science & Business Media
ISBN 13 : 1461558077
Total Pages : 394 pages
Book Rating : 4.4/5 (615 download)

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Book Synopsis Theory of Transport Properties of Semiconductor Nanostructures by : Eckehard Schöll

Download or read book Theory of Transport Properties of Semiconductor Nanostructures written by Eckehard Schöll and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 394 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent advances in the fabrication of semiconductors have created almost un limited possibilities to design structures on a nanometre scale with extraordinary electronic and optoelectronic properties. The theoretical understanding of elec trical transport in such nanostructures is of utmost importance for future device applications. This represents a challenging issue of today's basic research since it requires advanced theoretical techniques to cope with the quantum limit of charge transport, ultrafast carrier dynamics and strongly nonlinear high-field ef fects. This book, which appears in the electronic materials series, presents an over view of the theoretical background and recent developments in the theory of electrical transport in semiconductor nanostructures. It contains 11 chapters which are written by experts in their fields. Starting with a tutorial introduction to the subject in Chapter 1, it proceeds to present different approaches to transport theory. The semiclassical Boltzmann transport equation is in the centre of the next three chapters. Hydrodynamic moment equations (Chapter 2), Monte Carlo techniques (Chapter 3) and the cellular au tomaton approach (Chapter 4) are introduced and illustrated with applications to nanometre structures and device simulation. A full quantum-transport theory covering the Kubo formalism and nonequilibrium Green's functions (Chapter 5) as well as the density matrix theory (Chapter 6) is then presented.

Hot Carriers in Semiconductor Nanostructures

Author : Jagdeep Shah
Publisher : Elsevier
ISBN 13 : 0080925707
Total Pages : 525 pages
Book Rating : 4.0/5 (89 download)

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Book Synopsis Hot Carriers in Semiconductor Nanostructures by : Jagdeep Shah

Download or read book Hot Carriers in Semiconductor Nanostructures written by Jagdeep Shah and published by Elsevier. This book was released on 2012-12-02 with total page 525 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nonequilibrium hot charge carriers play a crucial role in the physics and technology of semiconductor nanostructure devices. This book, one of the first on the topic, discusses fundamental aspects of hot carriers in quasi-two-dimensional systems and the impact of these carriers on semiconductor devices. The work will provide scientists and device engineers with an authoritative review of the most exciting recent developments in this rapidly moving field. It should be read by all those who wish to learn the fundamentals of contemporary ultra-small, ultra-fast semiconductor devices. Topics covered include Reduced dimensionality and quantum wells Carrier-phonon interactions and hot phonons Femtosecond optical studies of hot carrier Ballistic transport Submicron and resonant tunneling devices

Monte Carlo Transport of Electrons and Photons

Author : T.M. Jenkins
Publisher : Springer Science & Business Media
ISBN 13 : 1461310598
Total Pages : 637 pages
Book Rating : 4.4/5 (613 download)

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Book Synopsis Monte Carlo Transport of Electrons and Photons by : T.M. Jenkins

Download or read book Monte Carlo Transport of Electrons and Photons written by T.M. Jenkins and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 637 pages. Available in PDF, EPUB and Kindle. Book excerpt: For ten days at the end of September, 1987, a group of about 75 scientists from 21 different countries gathered in a restored monastery on a 750 meter high piece of rock jutting out of the Mediterranean Sea to discuss the simulation of the transport of electrons and photons using Monte Carlo techniques. When we first had the idea for this meeting, Ralph Nelson, who had organized a previous course at the "Ettore Majorana" Centre for Scientific Culture, suggested that Erice would be the ideal place for such a meeting. Nahum, Nelson and Rogers became Co-Directors of the Course, with the help of Alessandro Rindi, the Director of the School of Radiation Damage and Protection, and Professor Antonino Zichichi, Director of the "Ettore Majorana" Centre. The course was an outstanding success, both scientifically and socially, and those at the meeting will carry the marks of having attended, both intellectually and on a personal level where many friendships were made. The scientific content of the course was at a very high caliber, both because of the hard work done by all the lecturers in preparing their lectures (e. g. , complete copies of each lecture were available at the beginning of the course) and because of the high quality of the "students", many of whom were accomplished experts in the field. The outstanding facilities of the Centre contributed greatly to the success. This volume contains the formal record of the course lectures.

A Monte Carlo Analysis of Electron Transport in Surface Channels in InP

Author : Glenn R. Bailey
Publisher :
ISBN 13 :
Total Pages : 342 pages
Book Rating : 4.:/5 (85 download)

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Book Synopsis A Monte Carlo Analysis of Electron Transport in Surface Channels in InP by : Glenn R. Bailey

Download or read book A Monte Carlo Analysis of Electron Transport in Surface Channels in InP written by Glenn R. Bailey and published by . This book was released on 1988 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Theory of Electron Transport in Semiconductors

Author : Carlo Jacoboni
Publisher : Springer Science & Business Media
ISBN 13 : 3642105866
Total Pages : 590 pages
Book Rating : 4.6/5 (421 download)

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Book Synopsis Theory of Electron Transport in Semiconductors by : Carlo Jacoboni

Download or read book Theory of Electron Transport in Semiconductors written by Carlo Jacoboni and published by Springer Science & Business Media. This book was released on 2010-09-05 with total page 590 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book originated out of a desire to provide students with an instrument which might lead them from knowledge of elementary classical and quantum physics to moderntheoreticaltechniques for the analysisof electrontransport in semiconductors. The book is basically a textbook for students of physics, material science, and electronics. Rather than a monograph on detailed advanced research in a speci?c area, it intends to introduce the reader to the fascinating ?eld of electron dynamics in semiconductors, a ?eld that, through its applications to electronics, greatly contributed to the transformationof all our lives in the second half of the twentieth century, and continues to provide surprises and new challenges. The ?eld is so extensive that it has been necessary to leave aside many subjects, while others could be dealt with only in terms of their basic principles. The book is divided into ?ve major parts. Part I moves from a survey of the fundamentals of classical and quantum physics to a brief review of basic semiconductor physics. Its purpose is to establish a common platform of language and symbols, and to make the entire treatment, as far as pos- ble, self-contained. Parts II and III, respectively, develop transport theory in bulk semiconductors in semiclassical and quantum frames. Part IV is devoted to semiconductor structures, including devices and mesoscopic coherent s- tems. Finally, Part V develops the basic theoretical tools of transport theory within the modern nonequilibrium Green-function formulation, starting from an introduction to second-quantization formalism.

Monte Carlo Studies of Nonlinear Electron Transport in III-V Semiconductors

Author : Ki Wook Kim
Publisher :
ISBN 13 :
Total Pages : 254 pages
Book Rating : 4.:/5 (22 download)

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Book Synopsis Monte Carlo Studies of Nonlinear Electron Transport in III-V Semiconductors by : Ki Wook Kim

Download or read book Monte Carlo Studies of Nonlinear Electron Transport in III-V Semiconductors written by Ki Wook Kim and published by . This book was released on 1988 with total page 254 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electron transport in III-V semiconductors, especially the Ga/As/AlGaAs material systems, is studied in various nonequilibrium situations. Throughout the study, a Monte Carlo simulation method is used for the analysis of transport properties in the semiclassical Boltzmann transport picture. The present work essentially consists of two aspects. The first topic is hot electron transport in GaAs, focusing on the electron impact ionization effects. The dependence of impact ionization rates on the details of the band structure is investigated by using two (local and nonlocal) pseudopotential methods. The spatial evolution of the ionization rate and the average electron energy are studied in nonuniform fields characteristic of p+-n junctions. The effects of field fluctuations due to the random distribution of dopants are studied as well. The possibility of new GaAs electron-emitting diodes is explored numerically and compared with the corresponding Si devices. The second aspect deals with the effects of conduction band discontinuities on the electron transport. In particular, one-dimensional heterostructures are modeled to study the nonlinear transport across heterointerfaces. (RH).

Carrier Transport in Nanoscale MOS Transistors

Author : Hideaki Tsuchiya
Publisher : John Wiley & Sons
ISBN 13 : 1118871723
Total Pages : 265 pages
Book Rating : 4.1/5 (188 download)

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Book Synopsis Carrier Transport in Nanoscale MOS Transistors by : Hideaki Tsuchiya

Download or read book Carrier Transport in Nanoscale MOS Transistors written by Hideaki Tsuchiya and published by John Wiley & Sons. This book was released on 2017-06-13 with total page 265 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive advanced level examination of the transport theory of nanoscale devices Provides advanced level material of electron transport in nanoscale devices from basic principles of quantum mechanics through to advanced theory and various numerical techniques for electron transport Combines several up-to-date theoretical and numerical approaches in a unified manner, such as Wigner-Boltzmann equation, the recent progress of carrier transport research for nanoscale MOS transistors, and quantum correction approximations The authors approach the subject in a logical and systematic way, reflecting their extensive teaching and research backgrounds

Monte Carlo Method for Simulation of Electron Transport in Semiconductors

Author : Joel Reuben Phillips
Publisher :
ISBN 13 :
Total Pages : 478 pages
Book Rating : 4.:/5 (26 download)

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Book Synopsis Monte Carlo Method for Simulation of Electron Transport in Semiconductors by : Joel Reuben Phillips

Download or read book Monte Carlo Method for Simulation of Electron Transport in Semiconductors written by Joel Reuben Phillips and published by . This book was released on 1991 with total page 478 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Estimators in Monte Carlo Semiconductor Electron Transport Simulations

Author : Daniel William Bailey
Publisher :
ISBN 13 :
Total Pages : 62 pages
Book Rating : 4.:/5 (15 download)

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Book Synopsis Estimators in Monte Carlo Semiconductor Electron Transport Simulations by : Daniel William Bailey

Download or read book Estimators in Monte Carlo Semiconductor Electron Transport Simulations written by Daniel William Bailey and published by . This book was released on 1986 with total page 62 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Monte Carlo Analysis of Quantum Transport and Fluctuations in Semiconductor II.

Author : Carlos Jacoboni
Publisher :
ISBN 13 :
Total Pages : 145 pages
Book Rating : 4.:/5 (227 download)

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Book Synopsis Monte Carlo Analysis of Quantum Transport and Fluctuations in Semiconductor II. by : Carlos Jacoboni

Download or read book Monte Carlo Analysis of Quantum Transport and Fluctuations in Semiconductor II. written by Carlos Jacoboni and published by . This book was released on 1988 with total page 145 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first topic treated is quantum transport. Two major lines of research have been investigated: the first is based on the introduction of the joint spectral density into a traditional Monte Carlo simulation; the second regards the formulation of a fully quantum mechanical approach for electron transport based on the density matrix approach. The second deals with treats noise, diffusion, and autocorrelation functions both from a theoretical and a simulative point of view. Results have been obtained for both bulk systems and quantum wells. The third topic concerns with an analysis of the effect of phonon populations in excess with respect to their thermal equilibrium values. Numerical Monte Carlo simulations have been performed for both GaAs and GaAs-A1GaAs quantum wells. Keywords: Gallium arsenides; Aluminum gallium arsenides; Quantum wells. (JHD).

Semiconductor Nanostructures

Author : Thomas Ihn
Publisher : OUP Oxford
ISBN 13 : 0191574171
Total Pages : 568 pages
Book Rating : 4.1/5 (915 download)

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Book Synopsis Semiconductor Nanostructures by : Thomas Ihn

Download or read book Semiconductor Nanostructures written by Thomas Ihn and published by OUP Oxford. This book was released on 2009-12-04 with total page 568 pages. Available in PDF, EPUB and Kindle. Book excerpt: This textbook describes the physics of semiconductor nanostructures with emphasis on their electronic transport properties. At its heart are five fundamental transport phenomena: quantized conductance, tunnelling transport, the Aharonov-Bohm effect, the quantum Hall effect, and the Coulomb blockade effect. The book starts out with the basics of solid state and semiconductor physics, such as crystal structure, band structure, and effective mass approximation, including spin-orbit interaction effects important for research in semiconductor spintronics. It contains material aspects such as band engineering, doping, gating, and a selection of nanostructure fabrication techniques. The book discusses the Drude-Boltzmann-Sommerfeld transport theory as well as conductance quantization and the Landauer-Büttiker theory. These concepts are extended to mesoscopic interference phenomena and decoherence, magnetotransport, and interaction effects in quantum-confined systems, guiding the reader from fundamental effects to specialized state-of-the-art experiments. The book will provide a thorough introduction into the topic for graduate and PhD students, and will be a useful reference for lecturers and researchers working in the field.

Electronic Quantum Transport in Mesoscopic Semiconductor Structures

Author : Thomas Ihn
Publisher : Springer
ISBN 13 : 9781441923097
Total Pages : 0 pages
Book Rating : 4.9/5 (23 download)

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Book Synopsis Electronic Quantum Transport in Mesoscopic Semiconductor Structures by : Thomas Ihn

Download or read book Electronic Quantum Transport in Mesoscopic Semiconductor Structures written by Thomas Ihn and published by Springer. This book was released on 2011-12-14 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Opening with a brief historical account of electron transport from Ohm's law through transport in semiconductor nanostructures, this book discusses topics related to electronic quantum transport. The book is written for graduate students and researchers in the field of mesoscopic semiconductors or in semiconductor nanostructures. Highlights include review of the cryogenic scanning probe techniques applied to semiconductor nanostructures.