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ISBN 13 :
Total Pages : 878 pages
Book Rating : 4.F/5 ( download)
Download or read book Dissertation Abstracts International written by and published by . This book was released on 1998 with total page 878 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Ghenadii Korotcenkov
Publisher : Springer Nature
ISBN 13 : 3031205103
Total Pages : 527 pages
Book Rating : 4.0/5 (312 download)
Download or read book Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors written by Ghenadii Korotcenkov and published by Springer Nature. This book was released on 2023-02-02 with total page 527 pages. Available in PDF, EPUB and Kindle. Book excerpt: Three-volumes book “Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors” is the first to cover both chemical sensors and biosensors and all types of photodetectors and radiation detectors based on II-VI semiconductors. It contains a comprehensive and detailed analysis of all aspects of the application of II-VI semiconductors in these devices. The second volume “Photodetectors” of a three-volume set, focus on the consideration of all types of optical detectors, including IR detectors, visible and UV photodetectors. This consideration includes both the fundamentals of the operation of detectors and the peculiarities of their manufacture and use. In particular, describes numerous strategies for their fabrication and characterization. An analysis of new trends in development of II-VI semiconductors-based photodetectors such as graphene/HgCdTe-, nanowire- and quantum dot-based photodetectors, as well as solution-processed, multicolor, flexible and self-powered photodetectors, are also given.
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ISBN 13 :
Total Pages : 2304 pages
Book Rating : 4.3/5 (243 download)
Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 2304 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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ISBN 13 :
Total Pages : 806 pages
Book Rating : 4.3/5 (91 download)
Download or read book American Doctoral Dissertations written by and published by . This book was released on 1997 with total page 806 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : American Ceramic Society
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ISBN 13 :
Total Pages : 1058 pages
Book Rating : 4.E/5 ( download)
Download or read book Ceramic Abstracts written by American Ceramic Society and published by . This book was released on 1997 with total page 1058 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : University of Illinois at Urbana-Champaign. Office of Engineering Publications
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ISBN 13 :
Total Pages : 370 pages
Book Rating : 4.:/5 (31 download)
Download or read book The Summary of Engineering Research written by University of Illinois at Urbana-Champaign. Office of Engineering Publications and published by . This book was released on 1988 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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ISBN 13 :
Total Pages : 518 pages
Book Rating : 4.X/5 (2 download)
Download or read book JJAP written by and published by . This book was released on 1994 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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ISBN 13 :
Total Pages : 1176 pages
Book Rating : 4.3/5 (91 download)
Download or read book Japanese Journal of Applied Physics written by and published by . This book was released on 1994 with total page 1176 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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ISBN 13 :
Total Pages : 800 pages
Book Rating : 4.3/5 (91 download)
Download or read book Soviet Physics written by and published by . This book was released on 1987 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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ISBN 13 :
Total Pages : 292 pages
Book Rating : 4.:/5 (3 download)
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1992 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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ISBN 13 :
Total Pages : 1210 pages
Book Rating : 4.F/5 ( download)
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1992 with total page 1210 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Serge Oktyabrsky
Publisher : Springer Science & Business Media
ISBN 13 : 1441915478
Total Pages : 451 pages
Book Rating : 4.4/5 (419 download)
Download or read book Fundamentals of III-V Semiconductor MOSFETs written by Serge Oktyabrsky and published by Springer Science & Business Media. This book was released on 2010-03-16 with total page 451 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
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ISBN 13 :
Total Pages : 1218 pages
Book Rating : 4.E/5 ( download)
Download or read book Metals Abstracts written by and published by . This book was released on 1985 with total page 1218 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Sandip Tiwari
Publisher : Academic Press
ISBN 13 : 148328929X
Total Pages : 845 pages
Book Rating : 4.4/5 (832 download)
Download or read book Compound Semiconductor Device Physics written by Sandip Tiwari and published by Academic Press. This book was released on 2013-10-22 with total page 845 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those interested in silicon devices. Each chapter ends with exercises that have been designed to reinforce concepts, to complement arguments or derivations, and to emphasize the nature of approximations by critically evaluating realistic conditions.One of the most rigorous treatments of compound semiconductor device physics yet published**Essential reading for a complete understanding of modern devices**Includes chapter-ending exercises to facilitate understanding
Author : Michael Levinshtein
Publisher : World Scientific
ISBN 13 : 9812563954
Total Pages : 223 pages
Book Rating : 4.8/5 (125 download)
Download or read book Breakdown Phenomena in Semiconductors and Semiconductor Devices written by Michael Levinshtein and published by World Scientific. This book was released on 2005 with total page 223 pages. Available in PDF, EPUB and Kindle. Book excerpt: Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices.The aim of this book is to summarize the main experimental results on avalanche and breakdown phenomena in semiconductors and semiconductor devices and to analyze their features from a unified point of view. Attention is focused on the phenomenology of avalanche multiplication and the various kinds of breakdown phenomena and their qualitative analysis.
Author : Gerhard Lutz
Publisher : Springer
ISBN 13 : 3540716793
Total Pages : 351 pages
Book Rating : 4.5/5 (47 download)
Download or read book Semiconductor Radiation Detectors written by Gerhard Lutz and published by Springer. This book was released on 2007-06-15 with total page 351 pages. Available in PDF, EPUB and Kindle. Book excerpt: Starting from basic principles, this book describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. The author, whose own contributions to these developments have been significant, explains the working principles of semiconductor radiation detectors in an intuitive way. Broad coverage is also given to electronic signal readout and to the subject of radiation damage.
Author : Sadao Adachi
Publisher : IET
ISBN 13 : 9780852965580
Total Pages : 354 pages
Book Rating : 4.9/5 (655 download)
Download or read book Properties of Aluminium Gallium Arsenide written by Sadao Adachi and published by IET. This book was released on 1993 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt: The alloy system A1GaAs/GaAs is potentially of great importance for many high-speed electronics and optoelectronic devices, because the lattice parameter difference GaAs and A1GaAs is very small, which promises an insignificant concentration of undesirable interface states. Thanks to this prominent feature, a number of interesting properties and phenomena, such as high-mobility low-dimensional carrier gases, resonant tunnelling and fractional quantum Hall effect, have been found in the A1GaAs/GaAs heterostructure system. New devices, such as modulation-doped FETs, heterojunction bipolar transistors, resonant tunnelling transistors, quantum-well lasers, and other photonic and quantum-effect devices, have also been developed recently using this material system. These areas are recognized as not being the most interesting and active fields in semiconductor physics and device engineering.
