Monte Carlo Device Simulator For Electron Transport In Iii V Semiconductors

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Fundamentals of III-V Semiconductor MOSFETs

Author : Serge Oktyabrsky
Publisher : Springer Science & Business Media
ISBN 13 : 1441915478
Total Pages : 451 pages
Book Rating : 4.4/5 (419 download)

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Book Synopsis Fundamentals of III-V Semiconductor MOSFETs by : Serge Oktyabrsky

Download or read book Fundamentals of III-V Semiconductor MOSFETs written by Serge Oktyabrsky and published by Springer Science & Business Media. This book was released on 2010-03-16 with total page 451 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.

Springer Handbook of Semiconductor Devices

Author : Massimo Rudan
Publisher : Springer Nature
ISBN 13 : 3030798275
Total Pages : 1680 pages
Book Rating : 4.0/5 (37 download)

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Book Synopsis Springer Handbook of Semiconductor Devices by : Massimo Rudan

Download or read book Springer Handbook of Semiconductor Devices written by Massimo Rudan and published by Springer Nature. This book was released on 2022-11-10 with total page 1680 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.

Monte Carlo Device Simulation

Author : Karl Hess
Publisher : Springer Science & Business Media
ISBN 13 : 1461540267
Total Pages : 317 pages
Book Rating : 4.4/5 (615 download)

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Book Synopsis Monte Carlo Device Simulation by : Karl Hess

Download or read book Monte Carlo Device Simulation written by Karl Hess and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 317 pages. Available in PDF, EPUB and Kindle. Book excerpt: Monte Carlo simulation is now a well established method for studying semiconductor devices and is particularly well suited to highlighting physical mechanisms and exploring material properties. Not surprisingly, the more completely the material properties are built into the simulation, up to and including the use of a full band structure, the more powerful is the method. Indeed, it is now becoming increasingly clear that phenomena such as reliabil ity related hot-electron effects in MOSFETs cannot be understood satisfac torily without using full band Monte Carlo. The IBM simulator DAMOCLES, therefore, represents a landmark of great significance. DAMOCLES sums up the total of Monte Carlo device modeling experience of the past, and reaches with its capabilities and opportunities into the distant future. This book, therefore, begins with a description of the IBM simulator. The second chapter gives an advanced introduction to the physical basis for Monte Carlo simulations and an outlook on why complex effects such as collisional broadening and intracollisional field effects can be important and how they can be included in the simulations. References to more basic intro the book. The third chapter ductory material can be found throughout describes a typical relationship of Monte Carlo simulations to experimental data and indicates a major difficulty, the vast number of deformation poten tials required to simulate transport throughout the entire Brillouin zone. The fourth chapter addresses possible further extensions of the Monte Carlo approach and subtleties of the electron-electron interaction.

The Monte Carlo Method for Semiconductor Device Simulation

Author : Carlo Jacoboni
Publisher : Springer Science & Business Media
ISBN 13 : 9783211821107
Total Pages : 382 pages
Book Rating : 4.8/5 (211 download)

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Book Synopsis The Monte Carlo Method for Semiconductor Device Simulation by : Carlo Jacoboni

Download or read book The Monte Carlo Method for Semiconductor Device Simulation written by Carlo Jacoboni and published by Springer Science & Business Media. This book was released on 1989-10-30 with total page 382 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume presents the application of the Monte Carlo method to the simulation of semiconductor devices, reviewing the physics of transport in semiconductors, followed by an introduction to the physics of semiconductor devices.

Simulation of Semiconductor Devices and Processes

Author : Siegfried Selberherr
Publisher : Springer
ISBN 13 : 9780387825045
Total Pages : 532 pages
Book Rating : 4.8/5 (25 download)

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Book Synopsis Simulation of Semiconductor Devices and Processes by : Siegfried Selberherr

Download or read book Simulation of Semiconductor Devices and Processes written by Siegfried Selberherr and published by Springer. This book was released on 1993 with total page 532 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Simulation of Semiconductor Processes and Devices 2007

Author : Tibor Grasser
Publisher : Springer Science & Business Media
ISBN 13 : 3211728600
Total Pages : 472 pages
Book Rating : 4.2/5 (117 download)

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Book Synopsis Simulation of Semiconductor Processes and Devices 2007 by : Tibor Grasser

Download or read book Simulation of Semiconductor Processes and Devices 2007 written by Tibor Grasser and published by Springer Science & Business Media. This book was released on 2007-09-18 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presentaƯ tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad specƯ trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites

Handbook of GaN Semiconductor Materials and Devices

Author : Wengang (Wayne) Bi
Publisher : CRC Press
ISBN 13 : 1498747140
Total Pages : 709 pages
Book Rating : 4.4/5 (987 download)

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Book Synopsis Handbook of GaN Semiconductor Materials and Devices by : Wengang (Wayne) Bi

Download or read book Handbook of GaN Semiconductor Materials and Devices written by Wengang (Wayne) Bi and published by CRC Press. This book was released on 2017-10-20 with total page 709 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.

Simulation of Semiconductor Devices and Processes

Author : Siegfried Selberherr
Publisher : Springer Science & Business Media
ISBN 13 : 3709166578
Total Pages : 525 pages
Book Rating : 4.7/5 (91 download)

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Book Synopsis Simulation of Semiconductor Devices and Processes by : Siegfried Selberherr

Download or read book Simulation of Semiconductor Devices and Processes written by Siegfried Selberherr and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 525 pages. Available in PDF, EPUB and Kindle. Book excerpt: The "Fifth International Conference on Simulation of Semiconductor Devices and Processes" (SISDEP 93) continues a series of conferences which was initiated in 1984 by K. Board and D. R. J. Owen at the University College of Wales, Swansea, where it took place a second time in 1986. Its organization was succeeded by G. Baccarani and M. Rudan at the University of Bologna in 1988, and W. Fichtner and D. Aemmer at the Federal Institute of Technology in Zurich in 1991. This year the conference is held at the Technical University of Vienna, Austria, September 7 - 9, 1993. This conference shall provide an international forum for the presentation of out standing research and development results in the area of numerical process and de vice simulation. The miniaturization of today's semiconductor devices, the usage of new materials and advanced process steps in the development of new semiconduc tor technologies suggests the design of new computer programs. This trend towards more complex structures and increasingly sophisticated processes demands advanced simulators, such as fully three-dimensional tools for almost arbitrarily complicated geometries. With the increasing need for better models and improved understand ing of physical effects, the Conference on Simulation of Semiconductor Devices and Processes brings together the simulation community and the process- and device en gineers who need reliable numerical simulation tools for characterization, prediction, and development.

Supercomputing 8̕9 ̓: Supercomputer applications

Author :
Publisher :
ISBN 13 :
Total Pages : 548 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis Supercomputing 8̕9 ̓: Supercomputer applications by :

Download or read book Supercomputing 8̕9 ̓: Supercomputer applications written by and published by . This book was released on 1989 with total page 548 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Analysis and Simulation of Heterostructure Devices

Author : Vassil Palankovski
Publisher : Springer Science & Business Media
ISBN 13 : 3709105609
Total Pages : 309 pages
Book Rating : 4.7/5 (91 download)

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Book Synopsis Analysis and Simulation of Heterostructure Devices by : Vassil Palankovski

Download or read book Analysis and Simulation of Heterostructure Devices written by Vassil Palankovski and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 309 pages. Available in PDF, EPUB and Kindle. Book excerpt: The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.

Device Modeling Based on Monte Carlo Simulation of Electron Transport in Group III-nitride Semiconductors

Author : John David Albrecht
Publisher :
ISBN 13 :
Total Pages : 508 pages
Book Rating : 4.:/5 (319 download)

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Book Synopsis Device Modeling Based on Monte Carlo Simulation of Electron Transport in Group III-nitride Semiconductors by : John David Albrecht

Download or read book Device Modeling Based on Monte Carlo Simulation of Electron Transport in Group III-nitride Semiconductors written by John David Albrecht and published by . This book was released on 1999 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Handbook of Optoelectronic Device Modeling and Simulation

Author : Joachim Piprek
Publisher : CRC Press
ISBN 13 : 149874947X
Total Pages : 835 pages
Book Rating : 4.4/5 (987 download)

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Book Synopsis Handbook of Optoelectronic Device Modeling and Simulation by : Joachim Piprek

Download or read book Handbook of Optoelectronic Device Modeling and Simulation written by Joachim Piprek and published by CRC Press. This book was released on 2017-10-10 with total page 835 pages. Available in PDF, EPUB and Kindle. Book excerpt: • Provides a comprehensive survey of fundamental concepts and methods for optoelectronic device modeling and simulation. • Gives a broad overview of concepts with concise explanations illustrated by real results. • Compares different levels of modeling, from simple analytical models to complex numerical models. • Discusses practical methods of model validation. • Includes an overview of numerical techniques.

International Conference on Simulation of Semiconductor Processes and Devices

Author :
Publisher :
ISBN 13 :
Total Pages : 308 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis International Conference on Simulation of Semiconductor Processes and Devices by :

Download or read book International Conference on Simulation of Semiconductor Processes and Devices written by and published by . This book was released on 2000 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Semiconductor Transport

Author : David Ferry
Publisher : CRC Press
ISBN 13 : 135197338X
Total Pages : 379 pages
Book Rating : 4.3/5 (519 download)

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Book Synopsis Semiconductor Transport by : David Ferry

Download or read book Semiconductor Transport written by David Ferry and published by CRC Press. This book was released on 2016-08-12 with total page 379 pages. Available in PDF, EPUB and Kindle. Book excerpt: The information revolution would have been radically different, or impossible, without the use of the materials known generically as semiconductors. The properties of these materials, particularly the potential for doping with impurities to create transistors and diodes and controlling the local potential by gates, are essential for microelectronics. Semiconductor Transport is an introductory text on electron transport in semiconductor materials and is written for advanced undergraduates and graduate students. The book provides a thorough treatment of modern approaches to the transport properties of semiconductors and their calculation. It also introduces those aspects of solid state physics, which are vitally important for understanding transport in them.

Device and Circuit Cryogenic Operation for Low Temperature Electronics

Author : Francis Balestra
Publisher : Springer Science & Business Media
ISBN 13 : 1475733186
Total Pages : 267 pages
Book Rating : 4.4/5 (757 download)

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Book Synopsis Device and Circuit Cryogenic Operation for Low Temperature Electronics by : Francis Balestra

Download or read book Device and Circuit Cryogenic Operation for Low Temperature Electronics written by Francis Balestra and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 267 pages. Available in PDF, EPUB and Kindle. Book excerpt: Device and Circuit Cryogenic Operation for Low Temperature Electronics is a first in reviewing the performance and physical mechanisms of advanced devices and circuits at cryogenic temperatures that can be used for many applications. The first two chapters cover bulk silicon and SOI MOSFETs. The electronic transport in the inversion layer, the influence of impurity freeze-out, the special electrical properties of SOI structures, the device reliability and the interest of a low temperature operation for the ultimate integration of silicon down to nanometer dimensions are described. The next two chapters deal with Silicon-Germanium and III-V Heterojunction Bipolar Transistors, as well as III-V High Electron Mobility Transistors (HEMT). The basic physics of the SiGe HBT and its unique cryogenic capabilities, the optimization of such bipolar devices, and the performance of SiGe HBT BiCMOS technology at liquid nitrogen temperature are examined. The physical effects in III-V semiconductors at low temperature, the HEMT and HBT static, high frequency and noise properties, and the comparison of various cooled III-V devices are also addressed. The next chapter treats quantum effect devices made of silicon materials. The major quantum effects at low temperature, quantum wires, quantum dots as well as single electron devices and applications are investigated. The last chapter overviews the performances of cryogenic circuits and their applications. The low temperature properties and performance of inverters, multipliers, adders, operational amplifiers, memories, microprocessors, imaging devices, circuits and systems, sensors and read-out circuits are analyzed. Device and Circuit Cryogenic Operation for Low Temperature Electronics is useful for researchers, engineers, Ph.D. and M.S. students working in the field of advanced electron devices and circuits, new semiconductor materials, and low temperature electronics and physics.

Hierarchical Device Simulation

Author : Christoph Jungemann
Publisher : Springer Science & Business Media
ISBN 13 : 3709160863
Total Pages : 278 pages
Book Rating : 4.7/5 (91 download)

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Book Synopsis Hierarchical Device Simulation by : Christoph Jungemann

Download or read book Hierarchical Device Simulation written by Christoph Jungemann and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 278 pages. Available in PDF, EPUB and Kindle. Book excerpt: This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy.

Nuclear Electronics with Quantum Cryogenic Detectors

Author : Vladimir Polushkin
Publisher : John Wiley & Sons
ISBN 13 : 1119834686
Total Pages : 452 pages
Book Rating : 4.1/5 (198 download)

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Book Synopsis Nuclear Electronics with Quantum Cryogenic Detectors by : Vladimir Polushkin

Download or read book Nuclear Electronics with Quantum Cryogenic Detectors written by Vladimir Polushkin and published by John Wiley & Sons. This book was released on 2022-08-08 with total page 452 pages. Available in PDF, EPUB and Kindle. Book excerpt: NUCLEAR ELECTRONICS WITH QUANTUM CRYOGENIC DETECTORS An ideal, comprehensive reference on quantum cryogenic detector instrumentation for the semiconductor and nuclear electronics industries Quantum nuclear electronics is an important scientific and technological field that overviews the development of the most advanced analytical instrumentation. This instrumentation covers a broad range of applications such as astrophysics, fundamental nuclear research facilities, chemical nano-spectroscopy laboratories, remote sensing, security systems, forensic investigations, and more. In the years since the first edition of this popular resource, the discipline has developed from demonstrating the unprecedented energy resolving power of individual devices to building large frame cameras with hundreds of thousands of pixel arrays capable of measuring and processing massive information flow. Building upon its first edition, the second edition of Nuclear Electronics with Quantum Cryogenic Detectors reflects the latest advances by focusing on novel microwave kinetic inductance detection devices (MKIDs), the microwave superconducting quantum interferometers (MSQUIDs) extending by orders of magnitude the scalability of cryogenic detectors implementing newly developed multiplexing techniques and decoding algorithms. More, it reflects on the interaction of quantum cryogenic detectors—which in turn can be paired with semiconductor large frame cameras to provide a broad picture of a sky or chemical sample—and quantum devices, making this second edition of Nuclear Electronics a one-stop reference for the combined technologies. The book also provides an overview of latest developments in front-end electronics, signal processing channels, and cryogenics—all components of quantum spectroscopic systems—and provides guidance on the design and applications of the future quantum cryogenic ultra-high-resolution spectrometers. Nuclear Electronics with Quantum Cryogenic Detectors readers will also find: Fully revised material from the first edition relating to cryogenic requirements Brand new chapters on semiconductor radiation sensors, cooling and magnetic shielding for cryogenic detector systems; front-end readout electronic circuits for quantum cryogenic detectors; energy resolution of quantum cryogenic spectrometers; and applications of spectrometers based on cryogenic detectors A number of brand-new chapters dedicated to applications using MSQUID multiplexing technique, an area that will dominate the cryogenic detector field in the next decades Nuclear Electronics with Quantum Cryogenic Detectors provides a comprehensive overview of the entire discipline for researchers, industrial engineers, and graduate students involved in the development of high-precision nuclear measurements, nuclear analytical instrumentation, and advanced superconductor primary sensors. It is also a helpful resource for electrical and electronic engineers and physicists in the nuclear industry, as well as specialist researchers or professionals working in cryogenics applications like biomagnetism, quantum computing, gravitation measurement, and more.