Molecular Dynamics Studies of the Ion Beam Induced Crystallization in Silicon

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ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (88 download)

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Book Synopsis Molecular Dynamics Studies of the Ion Beam Induced Crystallization in Silicon by :

Download or read book Molecular Dynamics Studies of the Ion Beam Induced Crystallization in Silicon written by and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Direct Simulation of Ion Beam Induced Stressing and Amorphization of Silicon

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ISBN 13 :
Total Pages : 5 pages
Book Rating : 4.:/5 (684 download)

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Book Synopsis Direct Simulation of Ion Beam Induced Stressing and Amorphization of Silicon by :

Download or read book Direct Simulation of Ion Beam Induced Stressing and Amorphization of Silicon written by and published by . This book was released on 1999 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt: Using molecular dynamics (MD) simulation, the authors investigate the mechanical response of silicon to high dose ion-irradiation. The authors employ a realistic model to directly simulate ion beam induced amorphization. Structural properties of the amorphized sample are compared with experimental data and results of other simulation studies. The authors find the behavior of the irradiated material is related to the rate at which it can relax. Depending upon the ability to deform, the authors observe either the generation of a high compressive stress and subsequent expansion of the material, or generation of tensile stress and densification. The authors note that statistical material properties, such as radial distribution functions are not sufficient to differentiate between the different densities of the amorphous samples. For any reasonable deformation rate, the authors observe an expansion of the target upon amorphization in agreement with experimental observations. This is in contrast to simulations of quenching which usually result in a denser structure relative to crystalline Si. The authors conclude that although there is substantial agreement between experimental measurements and simulation results, the amorphous structures being investigated may have fundamental differences; the difference in density can be attributed to local defects within the amorphous network. Finally the authors show that annealing simulations of their amorphized samples can lead to a reduction of high energy local defects without a large scale rearrangement of the amorphous network. This supports the proposal that defects in a-Si are analogous to those in c-Si.

Energy Research Abstracts

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ISBN 13 :
Total Pages : 1032 pages
Book Rating : 4.:/5 (3 download)

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Book Synopsis Energy Research Abstracts by :

Download or read book Energy Research Abstracts written by and published by . This book was released on 1994 with total page 1032 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiannual, with semiannual and annual indexes. References to all scientific and technical literature coming from DOE, its laboratories, energy centers, and contractors. Includes all works deriving from DOE, other related government-sponsored information, and foreign nonnuclear information. Arranged under 39 categories, e.g., Biomedical sciences, basic studies; Biomedical sciences, applied studies; Health and safety; and Fusion energy. Entry gives bibliographical information and abstract. Corporate, author, subject, report number indexes.

Ion-Solid Interactions for Materials Modification and Processing: Volume 396

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ISBN 13 :
Total Pages : 940 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Ion-Solid Interactions for Materials Modification and Processing: Volume 396 by : D. B. Poker

Download or read book Ion-Solid Interactions for Materials Modification and Processing: Volume 396 written by D. B. Poker and published by . This book was released on 1996-05-23 with total page 940 pages. Available in PDF, EPUB and Kindle. Book excerpt: Several beam-solid interaction techniques have been developed that can either stand alone or be used in connection with others for materials processing, for fabrication of devices with enhanced electro-optical and mechanical properties, and with enhanced resistance to corrosion and erosion. For example, advances in focused ion beams (FIB) have brought out-of-reach ideas and applications to fruition. This book from MRS focuses on the developments in ion-beam-assisted processing of materials and reviews successful applications of the techniques. Topics include: fundamentals of ion-solid interactions; ion-beam mixing; radiation damage; insulators and wide bandgap materials; polymers; optical materials; plasma and ion-assisted techniques; metals and tribology; focused ion beams; fundamental semiconductor processing and compound semiconductors.

Materials Science with Ion Beams

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Publisher : Springer Science & Business Media
ISBN 13 : 354088789X
Total Pages : 386 pages
Book Rating : 4.5/5 (48 download)

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Book Synopsis Materials Science with Ion Beams by : Harry Bernas

Download or read book Materials Science with Ion Beams written by Harry Bernas and published by Springer Science & Business Media. This book was released on 2009-10-03 with total page 386 pages. Available in PDF, EPUB and Kindle. Book excerpt: Materials science is the prime example of an interdisciplinary science. It - compasses the ?elds of physics, chemistry, material science, electrical en- neering, chemical engineering and other disciplines. Success has been o- standing. World-class accomplishments in materials have been recognized by NobelprizesinPhysicsandChemistryandgivenrisetoentirelynewtechno- gies. Materials science advances have underpinned the technology revolution that has driven societal changes for the last ?fty years. Obviouslytheendisnotinsight!Futuretechnology-basedproblemsd- inatethecurrentscene.Highonthelistarecontrolandconservationofenergy and environment, water purity and availability, and propagating the inf- mation revolution. All fall in the technology domain. In every case proposed solutions begin with new forms of materials, materials processing or new arti?cial material structures. Scientists seek new forms of photovoltaics with greater e?ciency and lower cost. Water purity may be solved through surface control, which promises new desalination processes at lower energy and lower cost. Revolutionary concepts to extend the information revolution reside in controlling the “spin” of electrons or enabling quantum states as in quantum computing. Ion-beam experts make substantial contributions to all of these burgeoning sciences.

Ion Beam Induced Crystallization in Silicon

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Publisher :
ISBN 13 : 9789170322259
Total Pages : 65 pages
Book Rating : 4.3/5 (222 download)

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Book Synopsis Ion Beam Induced Crystallization in Silicon by : Jan Linnros

Download or read book Ion Beam Induced Crystallization in Silicon written by Jan Linnros and published by . This book was released on 1985 with total page 65 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Ion Beam Modification of Materials

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Publisher : Newnes
ISBN 13 : 0444599746
Total Pages : 1157 pages
Book Rating : 4.4/5 (445 download)

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Book Synopsis Ion Beam Modification of Materials by : J.S. Williams

Download or read book Ion Beam Modification of Materials written by J.S. Williams and published by Newnes. This book was released on 2012-12-02 with total page 1157 pages. Available in PDF, EPUB and Kindle. Book excerpt: This conference consisted of 15 oral sessions, including three plenary papers covering areas of general interest, 22 specialist invited papers and 51 contributed presentations as well as three poster sessions. There were several scientific highlights covering a diverse spectrum of materials and ion beam processing methods. These included a wide range of conventional and novel applications such as: optical displays and opto-electronics, motor vehicle and tooling parts, coatings tailored for desired properties, studies of fundamental defect properties, the production of novel (often buried) compounds, and treating biomedical materials. The study of nanocrystals produced by ion implantation in a range of host matrices, particularly for opto-electronics applications, was one especially new and exciting development. Despite several decades of study, major progress was reported at the conference in understanding defect evolution in semiconductors and the role of defects in transient impurity diffusion. The use of implantation to tune or isolate optical devices and in forming optically active centres and waveguides in semiconductors, polymers and oxide ceramics was a major focus of several presentations at the conference. The formation of hard coatings by ion assisted deposition or direct implantation was also an area which showed much recent progress. Ion beam techniques had also developed apace, particularly those based on plasma immersion ion implantation or alternative techniques for large area surface treatment. Finally, the use of ion beams for the direct treatment of cancerous tissue was a particularly novel and interesting application of ion beams.

Report of Research Center of Ion Beam Technology, Hosei University

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ISBN 13 :
Total Pages : 128 pages
Book Rating : 4.3/5 ( download)

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Book Synopsis Report of Research Center of Ion Beam Technology, Hosei University by :

Download or read book Report of Research Center of Ion Beam Technology, Hosei University written by and published by . This book was released on 2007 with total page 128 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Materials Science Applications of Ion Beam Techniques

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Publisher : Trans Tech Publications Ltd
ISBN 13 : 3035705208
Total Pages : 512 pages
Book Rating : 4.0/5 (357 download)

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Book Synopsis Materials Science Applications of Ion Beam Techniques by : A.G. Balogh

Download or read book Materials Science Applications of Ion Beam Techniques written by A.G. Balogh and published by Trans Tech Publications Ltd. This book was released on 1997-05-29 with total page 512 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first particle accelerators were built in the early 1930’s. For a long time, these devices were used exclusively by nuclear physicists. In the 1960’s, extensive developments in measuring techniques occurred, mainly as a result of newly developed semiconductor devices. Further strong interest arose from the semiconductor industry, and ion implantation became widely accepted as being the ultimate tool for Si-based device fabrication.

Silicon Molecular Beam Epitaxy

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Publisher : CRC Press
ISBN 13 : 1351085077
Total Pages : 306 pages
Book Rating : 4.3/5 (51 download)

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Book Synopsis Silicon Molecular Beam Epitaxy by : E. Kasper

Download or read book Silicon Molecular Beam Epitaxy written by E. Kasper and published by CRC Press. This book was released on 2018-05-04 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.

Molecular Dynamics Simulations of Disordered Materials

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Publisher : Springer
ISBN 13 : 3319156756
Total Pages : 540 pages
Book Rating : 4.3/5 (191 download)

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Book Synopsis Molecular Dynamics Simulations of Disordered Materials by : Carlo Massobrio

Download or read book Molecular Dynamics Simulations of Disordered Materials written by Carlo Massobrio and published by Springer. This book was released on 2015-04-22 with total page 540 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a unique reference work in the area of atomic-scale simulation of glasses. For the first time, a highly selected panel of about 20 researchers provides, in a single book, their views, methodologies and applications on the use of molecular dynamics as a tool to describe glassy materials. The book covers a wide range of systems covering "traditional" network glasses, such as chalcogenides and oxides, as well as glasses for applications in the area of phase change materials. The novelty of this work is the interplay between molecular dynamics methods (both at the classical and first-principles level) and the structure of materials for which, quite often, direct experimental structural information is rather scarce or absent. The book features specific examples of how quite subtle features of the structure of glasses can be unraveled by relying on the predictive power of molecular dynamics, used in connection with a realistic description of forces.

Nuclear Power Plant Design and Analysis Codes

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Publisher : Woodhead Publishing
ISBN 13 : 0128181915
Total Pages : 612 pages
Book Rating : 4.1/5 (281 download)

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Book Synopsis Nuclear Power Plant Design and Analysis Codes by : Jun Wang

Download or read book Nuclear Power Plant Design and Analysis Codes written by Jun Wang and published by Woodhead Publishing. This book was released on 2020-11-10 with total page 612 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nuclear Power Plant Design and Analysis Codes: Development, Validation, and Application presents the latest research on the most widely used nuclear codes and the wealth of successful accomplishments which have been achieved over the past decades by experts in the field. Editors Wang, Li,Allison, and Hohorst and their team of authors provide readers with a comprehensive understanding of nuclear code development and how to apply it to their work and research to make their energy production more flexible, economical, reliable and safe.Written in an accessible and practical way, each chapter considers strengths and limitations, data availability needs, verification and validation methodologies and quality assurance guidelines to develop thorough and robust models and simulation tools both inside and outside a nuclear setting. This book benefits those working in nuclear reactor physics and thermal-hydraulics, as well as those involved in nuclear reactor licensing. It also provides early career researchers with a solid understanding of fundamental knowledge of mainstream nuclear modelling codes, as well as the more experienced engineers seeking advanced information on the best solutions to suit their needs. Captures important research conducted over last few decades by experts and allows new researchers and professionals to learn from the work of their predecessors Presents the most recent updates and developments, including the capabilities, limitations, and future development needs of all codes Incudes applications for each code to ensure readers have complete knowledge to apply to their own setting

Scientific and Technical Aerospace Reports

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ISBN 13 :
Total Pages : 1102 pages
Book Rating : 4.X/5 (2 download)

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Book Synopsis Scientific and Technical Aerospace Reports by :

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1991 with total page 1102 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Structure, Stress and Surface Evolution in Silicon Due to Ion Bombardment

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Publisher : ProQuest
ISBN 13 : 9780549342045
Total Pages : 106 pages
Book Rating : 4.3/5 (42 download)

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Book Synopsis Structure, Stress and Surface Evolution in Silicon Due to Ion Bombardment by : Nagarajan Kalyanasundaram

Download or read book Structure, Stress and Surface Evolution in Silicon Due to Ion Bombardment written by Nagarajan Kalyanasundaram and published by ProQuest. This book was released on 2007 with total page 106 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the first part of the work, a molecular dynamics simulation methodology using empirical interatomic potentials is developed to study argon ion bombardment of silicon. Sputtering, structure and stress evolution are studied at 500eV and 700eV beam energies. The ion beam energies considered in this work are similar to those used in both nanometer-scale surface patterning experiments and a particular microelectromechanical systems (MEMS) fabrication technique.

Ion Implantation in Silicon

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ISBN 13 :
Total Pages : 160 pages
Book Rating : 4.:/5 (391 download)

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Book Synopsis Ion Implantation in Silicon by : Jeffrey Michael Finder

Download or read book Ion Implantation in Silicon written by Jeffrey Michael Finder and published by . This book was released on 1997 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Growth and Segregation Kinetics During Thermal and Ion Beam Induced Epitaxial Crystallization of Amorphous Silicon

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ISBN 13 :
Total Pages : 504 pages
Book Rating : 4.E/5 ( download)

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Book Synopsis Growth and Segregation Kinetics During Thermal and Ion Beam Induced Epitaxial Crystallization of Amorphous Silicon by : Jonathan S. Custer

Download or read book Growth and Segregation Kinetics During Thermal and Ion Beam Induced Epitaxial Crystallization of Amorphous Silicon written by Jonathan S. Custer and published by . This book was released on 1990 with total page 504 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Molecular Dynamics Studies of Silicon

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ISBN 13 :
Total Pages : 146 pages
Book Rating : 4.:/5 (23 download)

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Book Synopsis Molecular Dynamics Studies of Silicon by : Mark David Kluge

Download or read book Molecular Dynamics Studies of Silicon written by Mark David Kluge and published by . This book was released on 1987 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt: