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Author : Vidhya Ramachandran
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (144 download)
Download or read book Molecular Beam Epitaxy of Gallium Nitride on Silicon Carbide written by Vidhya Ramachandran and published by . This book was released on 1999 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Richard Gutt
Publisher :
ISBN 13 :
Total Pages : 133 pages
Book Rating : 4.:/5 (254 download)
Download or read book Plasma Assisted Molecular Beam Epitaxy of Gallium Nitride on Silicon Carbide Substrates written by Richard Gutt and published by . This book was released on 2008 with total page 133 pages. Available in PDF, EPUB and Kindle. Book excerpt: Diese Arbeit beinhaltet die Untersuchung verschiedener Siliciumcarbid-Substrate in Hinsicht auf ihre Eignung für die Galliumnitrid-Epitaxie. Es werden zwei kommerziell erhältliche SiC-Substrate unterschiedlicher Rauhigkeiten mit einem ionenstrahlsynthetisiertem SiC/Si-Pseudosubstrat verglichen. - Das erste Kapitel beleuchtet die Eigenschaften und die Bedeutung von GaN sowie entscheidende Aspekte bei der Substratwahl. - Im zweiten Kapitel werden sowohl die Wachstumsmethode, die plasmaunterstützte Molekularstrahlepitaxie (PAMBE), als auch die Analysemethoden, Beugung schneller Elektronen (RHEED), Photoelektronenspektroskopie (XPS/UPS), Rasterkraftmikroskopie (AFM), Röntgenbeugung (XRD) und Photolumineszenz (PL), vorgestellt. - Die Präparation durch verschiedene ex- und in-situ Reinigungsschritte sowie eine umfangreiche Oberflächenanalyse der Substrate sind im dritten Kapitel dargestellt. Dabei wird sowohl auf die Morphologie als auch die chemische Zusammensetzung der Oberflächen eingegangen. - Das vierte Kapitel befasst sich mit dem Wachstum der GaN-Schichten. Neben der Optimierung der Wachstumsparameter werden die Gitterrelaxation während der Nukleation und der Valenzband-Offset an der GaN/SiC-Grenzfläche diskutiert. Die einzelnen Wachstumsphasen werden vorgestellt. - Eine umfassende Charakterisierung der gewachsenen GaN-Schichten ist im fünften Kapitel zu finden. Die Morphologie, die chemische Zusammensetzung und die elektronische Struktur der Oberflächen werden in-situ untersucht. Des Weiteren werden die Kristallstruktur und Lumineszenzeigenschaften der GaN-Filme auf den verschiedenen Substraten verglichen.
Author : Randall M. Feenstra
Publisher : John Wiley & Sons
ISBN 13 : 9780470751824
Total Pages : 332 pages
Book Rating : 4.7/5 (518 download)
Download or read book Porous Silicon Carbide and Gallium Nitride written by Randall M. Feenstra and published by John Wiley & Sons. This book was released on 2008-04-15 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt: Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap. This comprehensive reference begins with an overview of porous wide-band-gap technology, and describes the underlying scientific basis for each application area. Additional chapters cover preparation, characterization, and topography; processing porous SiC; medical applications; magnetic ion behavior, and many more
Author : Jun Chen
Publisher :
ISBN 13 :
Total Pages : 110 pages
Book Rating : 4.:/5 (479 download)
Download or read book Growth of Gallium Nitride Using Molecular Beam Epitaxy written by Jun Chen and published by . This book was released on 2001 with total page 110 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : 張秀霞
Publisher :
ISBN 13 : 9781374783980
Total Pages : pages
Book Rating : 4.7/5 (839 download)
Download or read book Growing of Gan on Vicinal Sic Surface by Molecular Beam Epitaxy written by 張秀霞 and published by . This book was released on 2017-01-27 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Growing of GaN on Vicinal SiC Surface by Molecular Beam Epitaxy" by 張秀霞, Sau-ha, Cheung, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b3124300 Subjects: Molecular beam epitaxy Silicon carbide Gallium nitride
Author : Agnès Tempez
Publisher :
ISBN 13 :
Total Pages : 576 pages
Book Rating : 4.:/5 (499 download)
Download or read book Chemical Beam Epitaxy of Gallium Nitride on Silicon written by Agnès Tempez and published by . This book was released on 2001 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Hong Wu
Publisher :
ISBN 13 :
Total Pages : 262 pages
Book Rating : 4.E/5 ( download)
Download or read book Design and Fabrication of Gallium Nitride/silicon Carbide Heterojunction Bipolar Transistors written by Hong Wu and published by . This book was released on 2003 with total page 262 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Larry Burton Rowland
Publisher :
ISBN 13 :
Total Pages : 219 pages
Book Rating : 4.:/5 (257 download)
Download or read book Growth and Doping of Epitaxial Silicon Carbide Films and Aluminum Nitride-silicon Carbide Multilayers and Solid Solutions by Gas-source Molecular Beam Epitaxy written by Larry Burton Rowland and published by . This book was released on 1992 with total page 219 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Andrew Mark Johnston
Publisher :
ISBN 13 :
Total Pages : 452 pages
Book Rating : 4.:/5 (626 download)
Download or read book The Molecular Beam Epitaxy of Gallium Nitride written by Andrew Mark Johnston and published by . This book was released on 1996 with total page 452 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Mohamed Henini
Publisher : Newnes
ISBN 13 : 0123918596
Total Pages : 745 pages
Book Rating : 4.1/5 (239 download)
Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Newnes. This book was released on 2012-12-31 with total page 745 pages. Available in PDF, EPUB and Kindle. Book excerpt: This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in epitaxial growth with close discussion and a ‘how to’ on processing molecular or atomic beams that occur on a surface of a heated crystalline substrate in a vacuum.MBE has expanded in importance over the past thirty years (in terms of unique authors, papers and conferences) from a pure research domain into commercial applications (prototype device structures and more at the advanced research stage). MBE is important because it enables new device phenomena and facilitates the production of multiple layered structures with extremely fine dimensional and compositional control. The techniques can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. This book covers the advances made by MBE both in research and mass production of electronic and optoelectronic devices. It includes new semiconductor materials, new device structures which are commercially available, and many more which are at the advanced research stage. Condenses fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Coverage of MBE as mass production epitaxial technology enhances processing efficiency and throughput for semiconductor industry and nanostructured semiconductor materials research community
Author : Richard Scott Kern
Publisher :
ISBN 13 :
Total Pages : 648 pages
Book Rating : 4.:/5 (349 download)
Download or read book Microstructural and Electrical Characterization of Silicon Carbide and Aluminum Nitride Thin Films Grown by Gas-source Molecular Beam Epitaxy written by Richard Scott Kern and published by . This book was released on 1996 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : John Orton
Publisher : OUP Oxford
ISBN 13 : 0191061166
Total Pages : 529 pages
Book Rating : 4.1/5 (91 download)
Download or read book Molecular Beam Epitaxy written by John Orton and published by OUP Oxford. This book was released on 2015-06-25 with total page 529 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book is a history of Molecular Beam Epitaxy (MBE) as applied to the growth of semiconductor thin films (note that it does not cover the subject of metal thin films). It begins by examining the origins of MBE, first of all looking at the nature of molecular beams and considering their application to fundamental physics, to the development of nuclear magnetic resonance and to the invention of the microwave MASER. It shows how molecular beams of silane (SiH4) were used to study the nucleation of silicon films on a silicon substrate and how such studies were extended to compound semiconductors such as GaAs. From such surface studies in ultra-high vacuum the technique developed into a method of growing high quality single crystal films of a wide range of semiconductors. Comparing this with earlier evaporation methods of deposition and with other epitaxial deposition methods such as liquid phase and vapour phase epitaxy (LPE and VPE). The text describes the development of MBE machines from the early âhome-madeâ variety to that of commercial equipment and show how MBE was gradually refined to produce high quality films with atomic dimensions. This was much aided by the use of various in-situ surface analysis techniques, such as reflection high energy electron diffraction (RHEED) and mass spectrometry, a feature unique to MBE. It looks at various modified versions of the basic MBE process, then proceed to describe their application to the growth of so-called âlow-dimensional structuresâ (LDS) based on ultra-thin heterostructure films with thickness of order a few molecular monolayers. Further chapters cover the growth of a wide range of different compounds and describe their application to fundamental physics and to the fabrication of electronic and opto-electronic devices. The authors study the historical development of all these aspects and emphasise both the (often unexpected) manner of their discovery and development and the unique features which MBE brings to the growth of extremely complex structures with monolayer accuracy.
Author : Satoru Tanaka
Publisher :
ISBN 13 :
Total Pages : 298 pages
Book Rating : 4.:/5 (331 download)
Download or read book Growth and Defect Formation Mechanisms of Silicon Carbide and Aluminum Nitride Thin Films by Gas-source Molecular Beam Epitaxy written by Satoru Tanaka and published by . This book was released on 1995 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Jun Suda
Publisher :
ISBN 13 :
Total Pages : 6 pages
Book Rating : 4.:/5 (969 download)
Download or read book Wide Bandgap Semiconductor Electronics written by Jun Suda and published by . This book was released on 1998 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are the most promising materials to realize high-power, high-frequency, high-temperature and radiation-resistant electronic devices. In this paper, we present recent progress of our SiC and GaN research activities, high-quality epitaxial growth of SiC by using step-controlled epitaxy in chemical capor deposition, its application to SiC power-electronic devices and polytype control of GaN crystal by using metalorganic molecular beam epitaxy. [Authors' abstract].
Author : K. Shenai
Publisher : The Electrochemical Society
ISBN 13 : 1607682621
Total Pages : 361 pages
Book Rating : 4.6/5 (76 download)
Download or read book Gallium Nitride and Silicon Carbide Power Technologies written by K. Shenai and published by The Electrochemical Society. This book was released on 2011 with total page 361 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : B Jayant Baliga
Publisher : World Scientific Publishing Company
ISBN 13 : 9813109424
Total Pages : 592 pages
Book Rating : 4.8/5 (131 download)
Download or read book Gallium Nitride And Silicon Carbide Power Devices written by B Jayant Baliga and published by World Scientific Publishing Company. This book was released on 2016-12-12 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies.This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities.
Author : K. Shenai
Publisher : The Electrochemical Society
ISBN 13 : 1607685442
Total Pages : 312 pages
Book Rating : 4.6/5 (76 download)
Download or read book Gallium Nitride and Silicon Carbide Power Technologies 4 written by K. Shenai and published by The Electrochemical Society. This book was released on with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt:
