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Molecular Beam Epitaxial Growth And Characterization Of Gaas Algaas Thin Films And Multilayer Structures
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Book Synopsis Molecular Beam Epitaxial Growth and Characterization of GaAs/AlGaAs Thin Films and Multilayer Structures by : Yuh-Haw Wu
Download or read book Molecular Beam Epitaxial Growth and Characterization of GaAs/AlGaAs Thin Films and Multilayer Structures written by Yuh-Haw Wu and published by . This book was released on 1984 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Molecular Beam Epitaxy by : John Orton
Download or read book Molecular Beam Epitaxy written by John Orton and published by OUP Oxford. This book was released on 2015-06-25 with total page 529 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book is a history of Molecular Beam Epitaxy (MBE) as applied to the growth of semiconductor thin films (note that it does not cover the subject of metal thin films). It begins by examining the origins of MBE, first of all looking at the nature of molecular beams and considering their application to fundamental physics, to the development of nuclear magnetic resonance and to the invention of the microwave MASER. It shows how molecular beams of silane (SiH4) were used to study the nucleation of silicon films on a silicon substrate and how such studies were extended to compound semiconductors such as GaAs. From such surface studies in ultra-high vacuum the technique developed into a method of growing high quality single crystal films of a wide range of semiconductors. Comparing this with earlier evaporation methods of deposition and with other epitaxial deposition methods such as liquid phase and vapour phase epitaxy (LPE and VPE). The text describes the development of MBE machines from the early âhome-madeâ variety to that of commercial equipment and show how MBE was gradually refined to produce high quality films with atomic dimensions. This was much aided by the use of various in-situ surface analysis techniques, such as reflection high energy electron diffraction (RHEED) and mass spectrometry, a feature unique to MBE. It looks at various modified versions of the basic MBE process, then proceed to describe their application to the growth of so-called âlow-dimensional structuresâ (LDS) based on ultra-thin heterostructure films with thickness of order a few molecular monolayers. Further chapters cover the growth of a wide range of different compounds and describe their application to fundamental physics and to the fabrication of electronic and opto-electronic devices. The authors study the historical development of all these aspects and emphasise both the (often unexpected) manner of their discovery and development and the unique features which MBE brings to the growth of extremely complex structures with monolayer accuracy.
Book Synopsis Molecular Beam Epitaxy Growth and Characterization of ZnO-based Layers and Heterostructures by : Abdelhamid Abdelrehim Mahmoud Elshaer
Download or read book Molecular Beam Epitaxy Growth and Characterization of ZnO-based Layers and Heterostructures written by Abdelhamid Abdelrehim Mahmoud Elshaer and published by Cuvillier Verlag. This book was released on 2008 with total page 143 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Molecular Beam Epitaxy by : Mohamed Henini
Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. Condenses the fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Book Synopsis Molecular Beam Epitaxy by : Robin F.C. Farrow
Download or read book Molecular Beam Epitaxy written by Robin F.C. Farrow and published by Elsevier. This book was released on 1995-12-31 with total page 795 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this volume, the editor and contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices.
Book Synopsis Molecular Beam Epitaxial Growth and Characterization of GaAs and GaAsBi Based Semiconductor Devices by : Mahsa Mahtab
Download or read book Molecular Beam Epitaxial Growth and Characterization of GaAs and GaAsBi Based Semiconductor Devices written by Mahsa Mahtab and published by . This book was released on 2020 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: GaAs(1-x)Bi(x) (x = 0 to 17%) optical properties were investigated by spectroscopic ellipsometry (in energy ranges of 0.37-9.0 eV). Optical features in the dielectric function, known as the critical points, were distinguished and modeled using standard analytic line shapes. The energy dependence of the critical points energies was thoroughly investigated as a function of Bi content and thin film strain. Critical points analysis in the Brillion zone showed that the top of the valence band is most strongly dependent on Bi content compared to other parts of the band structure. In addition, an interesting new critical point was observed that is attributed to alternative allowed optical transitions made possible by changes to the top of the valence band caused by resonant interactions with Bi orbitals. Several of the critical points were extrapolated to 100% Bi and showed reasonable agreement with the calculated band structure of GaBi. GaAs(1-x)Bi(x) (x= 03, 0.7 and 1.1%) based p+/n and n+/p heterostructure photovoltaic performance was characterized through IV and CV measurement. By introduction of Bi into GaAs, a non-zero EQE below the GaAs band edge energy was observed while the highest efficiency was obtained by ~ 0.7% Bi incorporation. EQE spectrum was modeled to find the minority carrier diffusion lengths of ~ Ln = 1600 and Lp = 140 nm for p-doped and n-doped GaAs92Bi08 in the doping profile of 10^15 - 10^16 cm^-3. Analysis of the CV measurement confirmed the background n-doping effect of Bi atom and the essential role of the cap layer to reduce multi-level recombination mechanisms at the cell edge to improve ideality factor. Low temperature grown GaAs was optimized to be used as photoconductive antenna in THz time-domain spectroscopy setup. The As content was investigated to optimize photo-carrier generation using 1550 nm laser excitation while maintaining high mobility and resistivity required for optical switching. A barrier layer of AlAs was added below the LT-GaAs to limit carrier diffusion into the GaAs substrate. Moreover, LT-GaAs layer thickness and post-growth annealing condition was optimized. The optimized structure (2-μm LT-GaAs on 60-nm AlAs, under As2:Ga BEP of ~7, annealed at 550°C for 1 minute) outperformed a commercial InGaAs antenna by a factor of 15 with 4.5 THz bandwidth and 75 dB signal-to-noise ratio at 1550 nm wavelength.
Book Synopsis Successful Molecular Beam Epitaxy Growth and Characterization of (110) GaAs/GaAs and (110) AlGaAs/GaAs by : Lisa Parechanian Allen
Download or read book Successful Molecular Beam Epitaxy Growth and Characterization of (110) GaAs/GaAs and (110) AlGaAs/GaAs written by Lisa Parechanian Allen and published by . This book was released on 1987 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Molecular Beam Epitaxy by : Brian R. Pamplin
Download or read book Molecular Beam Epitaxy written by Brian R. Pamplin and published by Elsevier. This book was released on 2017-08-31 with total page 181 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy introduces the reader to the use of molecular beam epitaxy (MBE) in the generation of III-V and IV-VI compounds and alloys and describes the semiconductor and integrated optics reasons for using the technique. Topics covered include semiconductor superlattices by MBE; design considerations for MBE systems; periodic doping structure in gallium arsenide (GaAs); nonstoichiometry and carrier concentration control in MBE of compound semiconductors; and MBE techniques for IV-VI optoelectronic devices. The use of MBE to fabricate integrated optical devices and to study semiconductor surface and crystal physics is also considered. This book is comprised of eight chapters and opens with an overview of MBE as a crystal growth technique. The discussion then turns to the deposition of semiconductor superlattices of GaAs by MBE; important factors that must be considered in the design of a MBE system such as flux uniformity, crucible volume, heat shielding, source baffling, and shutters; and control of stoichiometry deviation in MBE growth of compound semiconductors, along with the effects of such deviation on the electronic properties of the grown films. The following chapters focus on the use of MBE techniques for growth of IV-VI optoelectronic devices; for fabrication of integrated optical devices; and for the study of semiconductor surface and crystal physics. The final chapter examines a superlattice consisting of a periodic sequence of ultrathin p- and n-doped semiconductor layers, possibly with intrinsic layers in between. This monograph will be of interest to chemists, physicists, and crystallographers.
Book Synopsis Gas Source Molecular Beam Epitaxy by : Morton B. Panish
Download or read book Gas Source Molecular Beam Epitaxy written by Morton B. Panish and published by Springer Science & Business Media. This book was released on 2013-03-07 with total page 441 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first book to present a unified treatment of hybrid source MBE and metalorganic MBE. Since metalorganic MBE permits selective area growth, the latest information on its application to the INP/GaInAs(P) system is presented. This system has been highlighted because it is one of rising importance, vital to optical communications systems, and has great potential for future ultra-highspeed electronics. The use of such analytical methods as high resolution x-ray diffraction, secondary ion mass spectroscopy, several photoluminescence methods, and the use of active devices for materials evaluation is shown in detail.
Book Synopsis Molecular Beam Epitaxial Growth and Characterization of Single Crystal Ferromagnetic Shape Memory Nickel-manganese-gallium Films by : Jianwei Dong
Download or read book Molecular Beam Epitaxial Growth and Characterization of Single Crystal Ferromagnetic Shape Memory Nickel-manganese-gallium Films written by Jianwei Dong and published by . This book was released on 2004 with total page 418 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth and Characterization of GaAs, (Al, Ga) As and GaAs-(Al, Ga) as Multiple Quantum Well Structures Grown by Molecular Beam Epitaxy on the (211) Orientation of GaAs by : Seshadri Subbanna
Download or read book Growth and Characterization of GaAs, (Al, Ga) As and GaAs-(Al, Ga) as Multiple Quantum Well Structures Grown by Molecular Beam Epitaxy on the (211) Orientation of GaAs written by Seshadri Subbanna and published by . This book was released on 1985 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth and Doping of GaAs and AlGaAs Thin Films on GaAs (111)A Surfaces by Molecular Beam Epitaxy by : Kenji Sato
Download or read book Growth and Doping of GaAs and AlGaAs Thin Films on GaAs (111)A Surfaces by Molecular Beam Epitaxy written by Kenji Sato and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Growth and Characterization of GaAs, AlGaAs and Their Heterostructures by Organometallic Vapor Phase Epitaxy by : James Richard Shealy
Download or read book The Growth and Characterization of GaAs, AlGaAs and Their Heterostructures by Organometallic Vapor Phase Epitaxy written by James Richard Shealy and published by . This book was released on 1983 with total page 548 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Molecular Beam Epitaxial Growth and Characterization of Strained Quantum Wires by : Yu-Pei Chen
Download or read book Molecular Beam Epitaxial Growth and Characterization of Strained Quantum Wires written by Yu-Pei Chen and published by . This book was released on 1995 with total page 346 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Silicon Molecular Beam Epitaxy by : E. Kasper
Download or read book Silicon Molecular Beam Epitaxy written by E. Kasper and published by CRC Press. This book was released on 2018-05-04 with total page 411 pages. Available in PDF, EPUB and Kindle. Book excerpt: This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Book Synopsis Molecular Beam Epitaxy by : Mohamed Henini
Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Newnes. This book was released on 2012-12-31 with total page 745 pages. Available in PDF, EPUB and Kindle. Book excerpt: This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in epitaxial growth with close discussion and a ‘how to’ on processing molecular or atomic beams that occur on a surface of a heated crystalline substrate in a vacuum.MBE has expanded in importance over the past thirty years (in terms of unique authors, papers and conferences) from a pure research domain into commercial applications (prototype device structures and more at the advanced research stage). MBE is important because it enables new device phenomena and facilitates the production of multiple layered structures with extremely fine dimensional and compositional control. The techniques can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. This book covers the advances made by MBE both in research and mass production of electronic and optoelectronic devices. It includes new semiconductor materials, new device structures which are commercially available, and many more which are at the advanced research stage. Condenses fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Coverage of MBE as mass production epitaxial technology enhances processing efficiency and throughput for semiconductor industry and nanostructured semiconductor materials research community
Book Synopsis Molecular Beam Epitaxial Growth and Characterization of the Modulated Structures for Detector Applications by : Jie Piao
Download or read book Molecular Beam Epitaxial Growth and Characterization of the Modulated Structures for Detector Applications written by Jie Piao and published by . This book was released on 1991 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt:
