Author : Ronald Waldo Grundbacher
Publisher :
ISBN 13 :
Total Pages : 256 pages
Book Rating : 4.:/5 (31 download)
Book Synopsis Modulation-doped Field Effect Transistors for High-power Microwave Applications by : Ronald Waldo Grundbacher
Download or read book Modulation-doped Field Effect Transistors for High-power Microwave Applications written by Ronald Waldo Grundbacher and published by . This book was released on 1997 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt: The need for high-power, low-noise transistors operating at frequencies of 1GHz and above has accelerated over the past several years, because applications in consumer markets, including telecommunications products, have increased dramatically. Transistors in the silicon system are having difficulty providing the high-power, low-noise characteristics at operation above 1 GHz. Transistors based on InP and GaAs, which include HBTs, MESFETs, and HEMTs, have proven to be excellent devices and can provide high-power, low-noise capabilities at frequencies of 100 GHz and beyond. Issues of importance for high-power microwave transistors include breakdown mechanisms, linearity, and material selection.