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Author : Chung-Chyung Han
Publisher :
ISBN 13 :
Total Pages : 390 pages
Book Rating : 4.:/5 (318 download)
Download or read book Modification of Electronic Properties of Metal/semiconductor Contacts written by Chung-Chyung Han and published by . This book was released on 1991 with total page 390 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Winfried Mönch
Publisher : Springer Science & Business Media
ISBN 13 : 9400906579
Total Pages : 302 pages
Book Rating : 4.4/5 (9 download)
Download or read book Electronic Structure of Metal-Semiconductor Contacts written by Winfried Mönch and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt: Interface and surface science have been important in the development of semicon ductor physics right from the beginning on. Modern device concepts are not only based on p-n junctions, which are interfaces between regions containing different types of dopants, but take advantage of the electronic properties of semiconductor insulator interfaces, heterojunctions between distinct semiconductors, and metal semiconductor contacts. The latter ones stood almost at the very beginning of semi conductor physics at the end of the last century. The rectifying properties of metal-semiconductor contacts were first described by Braun in 1874. A physically correct explanation of unilateral conduction, as this deviation from Ohm's law was called, could not be given at that time. A prerequisite was Wilson's quantum theory of electronic semi-conductors which he published in 1931. A few years later, in 1938, Schottky finally explained the rectification at metal-semiconductor contacts by a space-
Author : Winfried Mönch
Publisher : Springer Science & Business Media
ISBN 13 : 3662069458
Total Pages : 269 pages
Book Rating : 4.6/5 (62 download)
Download or read book Electronic Properties of Semiconductor Interfaces written by Winfried Mönch and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 269 pages. Available in PDF, EPUB and Kindle. Book excerpt: Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.
Author : Richard Timothy Popoff
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (925 download)
Download or read book Modification of Metal written by Richard Timothy Popoff and published by . This book was released on 2013 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal/semiconductor (MS) junctions are fundamental in classical microelectronic devices. With device fabrication size approaching atomic scales, electronic performance will become unpredictable as a result of quantum effects becoming relevant in charge transport. The objective of this thesis is to investigate the potential application of thin organic films to modify MS junctions and to modulate their electrical properties. Knowing how the electronic parameters in a device change over time is necessary for commercial viability. I therefore studied the long-term structural and electronic stability of metal-monolayer-silicon junctions, with respect to silicon oxide formation (monitored by x-ray photoelectron spectroscopy (XPS)). Simple straight-chain n-alkyl (CH3-(CH2)11-Si[equivalence]) and phenyl-terminated (C6H5-(CH2)3-Si[equivalence]) monolayers were compared. Both samples had a significant change in surface, optical and electronic properties upon oxide formation. Although phenyl-terminated samples oxidized quicker than n-alkyl ones, their electrical properties were more similar to its original measurement before oxidation. There is a wide variety of deposition techniques available for placing metal contacts onto organically modified semiconductors, which are complex and costly. The investigation on monolayers that could withstand simple and inexpensive physical vapour deposition provides an alternative, molecular approach to overcome this technical challenge I discovered that phenyl-terminated monolayers have a significantly greater density than n-alkyl monolayers, based on XPS. This correlated with reducing metal penetration into the monolayer and improvements in electronic properties preservation of the molecular junctions, as observed with ballistic electron emission spectroscopy. In fact, molecular dipole moment (perpendicular vector to the surface) can also alter the charge transport in an MS junction. I have prepared a diverse series of monolayers on silicon (n-alkyl, thioether, phenyl and ether) and discovered a linear relationship between dipole moment, and both the barrier height and ideality factor. The calculated dipole moment has been normalized to account for the monolayer density on silicon which greatly improved the aforementioned linear correlation. A simple mathematical model to predict experimental current versus voltage behavior was then proposed. It was determined that relatively negative dipole moment (parallel to the direction of R-S[equivalence]) affect the charge transport pathways to a greater extent than neutral ones.
Author : Sheng S. Li
Publisher : Springer Science & Business Media
ISBN 13 : 146130489X
Total Pages : 514 pages
Book Rating : 4.4/5 (613 download)
Download or read book Semiconductor Physical Electronics written by Sheng S. Li and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 514 pages. Available in PDF, EPUB and Kindle. Book excerpt: The purpose of this book is to provide the reader with a self-contained treatment of fundamen tal solid state and semiconductor device physics. The material presented in the text is based upon the lecture notes of a one-year graduate course sequence taught by this author for many years in the ·Department of Electrical Engineering of the University of Florida. It is intended as an introductory textbook for graduate students in electrical engineering. However, many students from other disciplines and backgrounds such as chemical engineering, materials science, and physics have also taken this course sequence, and will be interested in the material presented herein. This book may also serve as a general reference for device engineers in the semiconductor industry. The present volume covers a wide variety of topics on basic solid state physics and physical principles of various semiconductor devices. The main subjects covered include crystal structures, lattice dynamics, semiconductor statistics, energy band theory, excess carrier phenomena and recombination mechanisms, carrier transport and scattering mechanisms, optical properties, photoelectric effects, metal-semiconductor devices, the p--n junction diode, bipolar junction transistor, MOS devices, photonic devices, quantum effect devices, and high speed III-V semiconductor devices. The text presents a unified and balanced treatment of the physics of semiconductor materials and devices. It is intended to provide physicists and mat erials scientists with more device backgrounds, and device engineers with a broader knowledge of fundamental solid state physics.
Author : Winfried Monch
Publisher :
ISBN 13 : 9789400906587
Total Pages : 312 pages
Book Rating : 4.9/5 (65 download)
Download or read book Electronic Structure of Metal-Semiconductor Contacts written by Winfried Monch and published by . This book was released on 1990-11-30 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Heinz K. Henisch
Publisher : Oxford University Press, USA
ISBN 13 :
Total Pages : 408 pages
Book Rating : 4.:/5 (319 download)
Download or read book Semiconductor Contacts written by Heinz K. Henisch and published by Oxford University Press, USA. This book was released on 1984 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents what is currently known about the electrical properties of contacts in terms of concepts and models. It bridges the gap between the high-level abstractions of the modern theory of solids and the phenomenological treatments widely employed in device physics.
Author : Christopher R. Gardner
Publisher :
ISBN 13 :
Total Pages : 316 pages
Book Rating : 4.:/5 (29 download)
Download or read book Ion Beam Modification of Metal-silicon Contacts written by Christopher R. Gardner and published by . This book was released on 1984 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Korhan Demirkan
Publisher : ProQuest
ISBN 13 : 9780549752196
Total Pages : pages
Book Rating : 4.7/5 (521 download)
Download or read book Interfaces of Electrical Contacts in Organic Semiconductor Devices written by Korhan Demirkan and published by ProQuest. This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Progress in organic semiconductor devices relies on better understanding of interfaces as well as material development. The engineering of interfaces that exhibit low resistance, low operating voltage and long-term stability to minimize device degradation is one of the crucial requirements. Photoelectron spectroscopy is a powerful technique to study the metal-semiconductor interfaces, allowing: (i) elucidation of the energy levels of the semiconductor and the contacts that determine Schottky barrier height, (ii) inspection of electrical interactions (such as charge transfer, dipole formation, formation of induced density of states or formation of polaron/bi-polaron states) that effect the energy level alignment, (iii) determination of interfacial chemistry, and (iv) estimation of interface morphology. In this thesis, we have used photoelectron spectroscopy extensively for detailed analysis of the metal organic semiconductor interfaces. In this study, we demonstrate the use of photoelectron spectroscopy for construction of energy level diagrams and display some results related to chemical tailoring of materials for engineering interfaces with lowered Schottky barriers. Following our work on the energy level alignment of poly(p-phenyene vinylene) based organic semiconductors on various substrates [Au, indium tin oxide, Si (with native oxide) and Al (with native oxide)], we tested controlling the energy level alignment by using polar self assembled molecules (SAMs). Photoelectron spectroscopy showed that, by introducing SAMs on the Au surface, we successfully changed the effective work function of Au surface. We found that in this case, the change in the effective work function of the metal surface was not reflected as a shift in the energy levels of the organic semiconductor, as opposed to the results achieved with different substrate materials. To investigate the chemical interactions at the metal/organic interface, we studied the metallization of poly(2-methoxy-5,2'-ethyl-hexyloxy-phenylene vinylene) (MEH-PPV), polystyrene (PS) and ozone treated polystyrene (PS-O3) surfaces by thermal deposition of aluminum. Photoelectron spectroscopy showed the degree of chemical interaction between Al and each polymer, for MEH-PPV, the chemical interactions were mainly through the C-O present in the side chain of the polymer structure. The chemical interaction of Al with polystyrene was less significant, but it showed a dramatic increase after ozone treatment of the polystyrene surface (due to the formation of exposed oxygen sites). Formation of metal oxide and metal-organic compound is detected during the Al metallization of MEH-PPV and ozone-treated PS surfaces. Our results showed that the condensation of Al on polymer surfaces is highly dependent on surface reactivity. Enormous differences were observed for the condensation coefficient of Al on PS and PS-O3 surfaces. For the inert PS surface, results showed that Al atoms poorly wet the polymer surface and form distributed clusters at the surface. Results on reactive polymer surfaces suggest morphology reminiscent of a Stranski- Krastanov-type growth and high contact area. Many studies have shown that the insertion of a thin interlayer of the oxide or fluoride of alkali or alkaline metals between the low work function electrode and the organic semiconductor layers dramatically lowers the onset voltage and increases the efficiency compared to identical devices without the insulating layer. Various modes have been suggested for the mechanism of device performance enhancement. We have investigated the chemical and electrical interaction of (i) LiF with MEH-PPV, (ii) Al with MEH-PPV in the presence of a thin LiF layer at the interface, and finally (iii) the interaction of Al with LiF. AFM and XPS data showed that LiF forms island on the surface. Our data in agreement with various existing models suggested the (i) alteration in the electronic properties under applied bias, (ii) doping of the organic semiconductor, (iii) formation of metal alloy (Au-Li). In addition to the possible electrical modifications at the interface suggested previously, our data also suggest a change in the film growth on LiF modified surfaces.
Author : Xiao Chang
Publisher :
ISBN 13 :
Total Pages : 66 pages
Book Rating : 4.:/5 (124 download)
Download or read book Electrical Properties of Metal Semiconductor Contacts - Metals on MoS2: a Case Study written by Xiao Chang and published by . This book was released on 2017 with total page 66 pages. Available in PDF, EPUB and Kindle. Book excerpt: Properties of monolayer semiconductor, MoS2, are presented in the research. Schottky barrier height and Schottky-Mott rules are discussed. The current-voltage measurement and capacitance-voltage measurement are analyzed considering the role of the work function. We mainly focus on metal semiconductor contacts on molybdenum disulfide (MoS2). The properties of bulk and monolayer molybdenum disulfide are discussed. The differences between the bulk and monolayer, based on band gap structure theory, are presented. Utilizing the data obtained in the literature, the influence of temperature on the electrical properties of monolayer molybdenum disulfide are analyzed. In particular, the electrical properties of metals on MoS2 such as current-voltage (I-V) characteristics and capacitance-voltage (C-V) characteristics are addressed. Applications of metals on MoS2 are presented.
Author : P. Avouris
Publisher : Springer Science & Business Media
ISBN 13 : 9401120242
Total Pages : 344 pages
Book Rating : 4.4/5 (11 download)
Download or read book Atomic and Nanometer-Scale Modification of Materials written by P. Avouris and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the proceedings of the conference on "Atomic and Nanometer Scale Modification of Materials: Fundamentals and Applications" which was co-sponsored by NATO and the Engineering Foundation, and took place in Ventura, California in August 1992. The goal of the organizers was to bring together and facilitate the exchange of information and ideas between researchers involved in the development of techniques for nanometer-scale modification and manipulation. theorists investigating the fundamental mech anisms of the processes involved in modification, and scientists studying the properties and applications of nanostructures. About seventy scientists from all over the world participated in the conference. It has been more than 30 years since Richard Feynman wrote his prophetic article: ''There is Plenty of Room at the Bottom" (Science and Engineering, 23, 22, 1960). In it he predicted that some day we should be able to store bits of information in structures composed of only 100 atoms or so, and thus be able to write all the information accumulated in all the books in the world in a cube of material one two-hundredths of an inch high. He went on to say, "the prin ciples of physics, as far as I can see, do not speak against the possibility of maneuvering things atom by atom. " Since that time there has been significant progress towards the realization of Feynman's dreams.
Author : Simon S. Cohen
Publisher : Academic Press
ISBN 13 : 1483217795
Total Pages : 435 pages
Book Rating : 4.4/5 (832 download)
Download or read book Metal – Semiconductor Contacts and Devices written by Simon S. Cohen and published by Academic Press. This book was released on 2014-12-01 with total page 435 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices. This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularly, ohmic contacts. Contacts that involve polycrystalline silicon; applications of the metal-semiconductor barriers in MOS, bipolar, and MESFET digital integrated circuits; and methods for measuring the barrier height are covered as well. Process engineers, device physicists, circuit designers, and students of this discipline will find the book very useful.
Author : Zhiyan Liu
Publisher :
ISBN 13 :
Total Pages : 220 pages
Book Rating : 4.:/5 (89 download)
Download or read book Modifications of Electronic and Chemical Properties of GaSb Surface for Device Applications written by Zhiyan Liu and published by . This book was released on 2004 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : J.D. Chadi
Publisher : Springer Science & Business Media
ISBN 13 : 1461576822
Total Pages : 1580 pages
Book Rating : 4.4/5 (615 download)
Download or read book Proceedings of the 17th International Conference on the Physics of Semiconductors written by J.D. Chadi and published by Springer Science & Business Media. This book was released on 2013-12-01 with total page 1580 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Proceedings of the 17th International Conference on the Physics of Semiconductors are contained in this volume. A record 1050 scientists from 40 countries participated in the Conference which was held in San Francisco August 6·1 0, 1984. The Conference was organized by the ICPS Committee and sponsored by the International Union of Pure and Applied Physics and other professional, government, and industrial organizations listed on the following pages. Papers representing progress in all aspects of semiconductor physics were presented. Far more abstracts (765) than could be presented in a five-day meeting were considered by the International Program Committee. A total of 350 papers, consisting of 5 plenary, 35 invited, and 310 contributed, were presented at the Conference in either oral or poster sessions. All but a few of the papers were submitted and have been included in these Proceedings. An interesting shift in subject matter, in comparison with earlier Conferences, is manifested by the large number of papers on surfaces, interfaces, and quantum wells. To facilitate the use of the Proceedings in finding closely related papers among the sometimes relatively large number of contributions within a main subject area, we chose not to arrange the papers strictly according to the Conference schedule. We have organized the book, as can be seen from the Contents, into specific subcategories and subdivisions within each major category. Plenary and invited papers have been placed together with the appropriate contributed papers.
Author : Lawrence S. Pan
Publisher : Springer Science & Business Media
ISBN 13 : 1461522579
Total Pages : 482 pages
Book Rating : 4.4/5 (615 download)
Download or read book Diamond: Electronic Properties and Applications written by Lawrence S. Pan and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 482 pages. Available in PDF, EPUB and Kindle. Book excerpt: The use of diamond for electronic applications is not a new idea. As early as the 1920's diamonds were considered for their use as photoconductive detectors. However limitations in size and control of properties naturally limited the use of diamond to a few specialty applications. With the development of diamond synthesis from the vapor phase has come a more serious interest in developing diamond-based electronic devices. A unique combination of extreme properties makes diamond partiCularly well suited for high speed, high power, and high temperature applications. Vapor phase deposition of diamond allows large area films to be deposited, whose properties can potentially be controlled. Since the process of diamond synthesis was first realized, great progress have been made in understanding the issues important for growing diamond and fabricating electronic devices. The quality of both intrinsic and doped diamond has improved greatly to the point that viable applications are being developed. Our understanding of the properties and limitations has also improved greatly. While a number of excellent references review the general properties of diamond, this volume summarizes the great deal of literature related only to electronic properties and applications of diamond. We concentrate only on diamond; related materials such as diamond-like carbon (DLC) and other wide bandgap semiconductors are not treated here. In the first chapter Profs. C. Y. Fong and B. M. Klein discuss the band structure of single-crystal diamond and its relation to electronic properties.
Author : N. Miura
Publisher : Springer
ISBN 13 :
Total Pages : 960 pages
Book Rating : 4.:/5 (318 download)
Download or read book Proceedings of the 25th International Conference on the Physics of Semiconductors Part I written by N. Miura and published by Springer. This book was released on 2001-05-17 with total page 960 pages. Available in PDF, EPUB and Kindle. Book excerpt: As the proceedings of the most important and prestigious conference in the field of semiconductor physics, this book contains the latest information on the progress of semiconductor physics. Almost 1000 contributed papers address the full range of current topics. The special symposium deals with the interface between the fundamentals and device applications and tries to predict the developments in semiconductor physics, semiconductor materials and device applications in the 21st century. A wide range of contributions represent the forefront of academic and industrial research.
Author : Karthik Sarpatwari
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (55 download)
Download or read book Toward Understanding the Electrical Properties of Metal/semiconductor Schottky Contacts written by Karthik Sarpatwari and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The work presented in this thesis comprises of two parts. Part I deals with Schottky contacts to the wide bandgap (WBG) semiconductors SiC, GaN and ZnO. These semiconductors offer great promise for a wide variety of electronic and optoelectronic applications. Schottky barriers to WBG semiconductors are attractive in particular for high temperature/high power diodes, photodetectors, and gas sensors. However, the Schottky barriers exhibit non-ideal behavior, due in part to inhomogeneities originating from immature crystal growth and device processing technologies. Apart from being a versatile electronic component, the Schottky diode is a valuable test structure. The Schottky contact is routinely used to probe substrate and epilayer quality by different electrical characterization techniques. It is well established that the current-voltage-temperature (I-V-T) characteristics of Schottky contacts are routinely affected by the presence of barrier height inhomogeneities (BHI). Consequently, Schottky diode parameters such as the Schottky barrier height and the Richardson constant extracted using the I-V-T measurements can deviate from their actual values. The effects of BHI on the extracted Schottky barrier height have been studied in the literature. However, the effects of BHI on the Richardson constant have not been thoroughly explored and are the focus of the first part of this thesis. Based on the inhomogeneous Schottky barrier model provided by Tung, a new method for the extraction of the Richardson constant is developed. The new method is applied to the Richardson constant determination of n-type ZnO and GaN. Excellent agreement with the theoretical value is obtained in both cases. The advent of the nanoelectronics era has resulted in the Schottky contact evolving from the relatively simple, planar structure into a more complex structure. Compared to bulk Schottky contacts, the Schottky barrier properties are expected to be widely different at the nanoscale. For example, the I-V characteristics of nanoscale Schottky contacts are affected by the contact size and geometry. Due to the increased surface-to-volume ratio, the conduction properties of nanoscale Schottky contacts are also influenced by surface conditions such as surface charge and traps. Depending on contact size, geometry and surface conditions, an enhanced tunneling current contribution can be expected, further distorting the I-V characteristics from the simple thermionic emission model. Determination of the true Schottky barrier height in nanoscale contacts to semiconductor nanowires is important from both technological and fundamental scientific perspectives. In the second part of this thesis, we employ a simulation-based approach to study the conduction properties of an axial Schottky nanocontact to a surround-gate nanowire. A systematic study of the effects of surface charge on the I-V characteristics of the axial nano Schottky/nanowire system is undertaken. Based on the study, a method is proposed to extract the true Schottky barrier height from the I-V characteristics. The proposed method can serve as a valuable aid for interpreting experimental I-V data and can facilitate exploration of size effects on the Schottky barrier formation at the nanoscale.
