Read Books Online and Download eBooks, EPub, PDF, Mobi, Kindle, Text Full Free.
Download Modern Mos Technology full books in PDF, epub, and Kindle. Read online Modern Mos Technology ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Author : DeWitt G. Ong
Publisher : McGraw-Hill Companies
ISBN 13 :
Total Pages : 394 pages
Book Rating : 4.3/5 (91 download)
Download or read book Modern MOS Technology written by DeWitt G. Ong and published by McGraw-Hill Companies. This book was released on 1984 with total page 394 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : DeWitt G. Ong
Publisher :
ISBN 13 :
Total Pages : 366 pages
Book Rating : 4.:/5 (959 download)
Download or read book Modern MOS Technology written by DeWitt G. Ong and published by . This book was released on 2000 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Ross Knox Bassett
Publisher : JHU Press
ISBN 13 : 9780801868092
Total Pages : 452 pages
Book Rating : 4.8/5 (68 download)
Download or read book To the Digital Age written by Ross Knox Bassett and published by JHU Press. This book was released on 2002-05 with total page 452 pages. Available in PDF, EPUB and Kindle. Book excerpt: Bassett (history, North Carolina State U.) combines corporate and technological history in his examination of the development and propagation of the metal- oxide-semiconductor (MOS) transistor, the backbone of digital electronics. One of the primary questions the study addresses is how organizational leadership contributes to the ability to successfully adapt to technological change. The focus is on the operations of Fairchild Semiconductor, Intel, and IBM. Annotation (c)2003 Book News, Inc., Portland, OR (booknews.com).
Author : Christian C. Enz
Publisher : John Wiley & Sons
ISBN 13 : 0470855452
Total Pages : 328 pages
Book Rating : 4.4/5 (78 download)
Download or read book Charge-Based MOS Transistor Modeling written by Christian C. Enz and published by John Wiley & Sons. This book was released on 2006-08-14 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt: Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear understanding of the device properties, without the use of complicated equations. All the static, dynamic, noise, non-quasi-static models are completely described in terms of the inversion charge at the source and at the drain taking advantage of the symmetry of the device. Thanks to its hierarchical structure, the model offers several coherent description levels, from basic hand calculation equations to complete computer simulation model. It is also compact, with a minimum number of process-dependant device parameters. Written by its developers, this book provides a comprehensive treatment of the EKV charge-based model of the MOS transistor for the design and simulation of low-power analog and RF ICs. Clearly split into three parts, the authors systematically examine: the basic long-channel intrinsic charge-based model, including all the fundamental aspects of the EKV MOST model such as the basic large-signal static model, the noise model, and a discussion of temperature effects and matching properties; the extended charge-based model, presenting important information for understanding the operation of deep-submicron devices; the high-frequency model, setting out a complete MOS transistor model required for designing RF CMOS integrated circuits. Practising engineers and circuit designers in the semiconductor device and electronics systems industry will find this book a valuable guide to the modelling of MOS transistors for integrated circuits. It is also a useful reference for advanced students in electrical and computer engineering.
Author : Chenming Hu
Publisher : Prentice Hall
ISBN 13 : 0136085253
Total Pages : 387 pages
Book Rating : 4.1/5 (36 download)
Download or read book Modern Semiconductor Devices for Integrated Circuits written by Chenming Hu and published by Prentice Hall. This book was released on 2010 with total page 387 pages. Available in PDF, EPUB and Kindle. Book excerpt: Modern Semiconductor Devices for Integrated Circuits, First Edition introduces readers to the world of modern semiconductor devices with an emphasis on integrated circuit applications. KEY TOPICS Electrons and Holes in Semiconductors; Motion and Recombination of Electrons and Holes; Device Fabrication Technology; PN and Metal Semiconductor Junctions; MOS Capacitor; MOS Transistor; MOSFETs in ICs Scaling, Leakage, and Other Topics; Bipolar Transistor. MARKET Written by an experienced teacher, researcher, and expert in industry practices, this succinct and forward-looking text is appropriate for anyone interested in semiconductor devices for integrated curcuits, and serves as a suitable reference text for practicing engineers. "
Author : Martin Haartman
Publisher : Springer Science & Business Media
ISBN 13 : 1402059108
Total Pages : 224 pages
Book Rating : 4.4/5 (2 download)
Download or read book Low-Frequency Noise in Advanced MOS Devices written by Martin Haartman and published by Springer Science & Business Media. This book was released on 2007-08-23 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is an introduction to noise, describing fundamental noise sources and basic circuit analysis, discussing characterization of low-frequency noise and offering practical advice that bridges concepts of noise theory and modelling, characterization, CMOS technology and circuits. The text offers the latest research, reviewing the most recent publications and conference presentations. The book concludes with an introduction to noise in analog/RF circuits and describes how low-frequency noise can affect these circuits.
Author : E. H. Nicollian
Publisher : John Wiley & Sons
ISBN 13 : 047143079X
Total Pages : 928 pages
Book Rating : 4.4/5 (714 download)
Download or read book MOS (Metal Oxide Semiconductor) Physics and Technology written by E. H. Nicollian and published by John Wiley & Sons. This book was released on 2002-11-21 with total page 928 pages. Available in PDF, EPUB and Kindle. Book excerpt: Explains the theoretical and experimental foundations of the measurement of the electrical properties of the MOS system and the technology for controlling its properties. Emphasizes the silica and the silica-silicon interface. Provides a critical assessment of the literature, corrects incomplete or incorrect theoretical formulations, and gives critical comparisons of measurement methods. Contains information needed to grow an oxide, make an MOS capacitor array, and fabricate an integrated circuit with optimal performance and stability.
Author : Mitiko Miura-Mattausch
Publisher : World Scientific
ISBN 13 : 9812812059
Total Pages : 381 pages
Book Rating : 4.8/5 (128 download)
Download or read book The Physics and Modeling of Mosfets written by Mitiko Miura-Mattausch and published by World Scientific. This book was released on 2008 with total page 381 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.
Author : Yuan Taur
Publisher : Cambridge University Press
ISBN 13 : 9781107635715
Total Pages : 0 pages
Book Rating : 4.6/5 (357 download)
Download or read book Fundamentals of Modern VLSI Devices written by Yuan Taur and published by Cambridge University Press. This book was released on 2013-05-02 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.
Author : Olof Engström
Publisher : Cambridge University Press
ISBN 13 : 1316060624
Total Pages : 369 pages
Book Rating : 4.3/5 (16 download)
Download or read book The MOS System written by Olof Engström and published by Cambridge University Press. This book was released on 2014-09-25 with total page 369 pages. Available in PDF, EPUB and Kindle. Book excerpt: This detailed and up-to-date guide to modern MOS structures describes important tools, cutting-edge models, novel phenomena and current challenges in measuring and improving the control of future MOS systems for transistor channels. Building up from basic electrostatics, it introduces the ideal MOS system, physical and electrical properties of high-k oxides, their dielectric constants, and energy offsets to semiconductors and metals, before moving on to electrical and physical characterization methods for high-k dielectric materials. Finally, real MOS systems are introduced: high-k dielectrics and interlayers, the influence of phonon dynamics, interface states and bulk traps, effective metal work functions, gate leakage phenomena and high mobility channel materials. Abstract concepts are supported by practical examples and critical comparison, encouraging an intuitive understanding of the principles at work, and presented alongside recent theoretical and experimental results, making this the ideal companion for researchers, graduate students and industrial development engineers working in nanoelectronics.
Author : Chandan Kumar Sarkar
Publisher : CRC Press
ISBN 13 : 1466512660
Total Pages : 462 pages
Book Rating : 4.4/5 (665 download)
Download or read book Technology Computer Aided Design written by Chandan Kumar Sarkar and published by CRC Press. This book was released on 2018-09-03 with total page 462 pages. Available in PDF, EPUB and Kindle. Book excerpt: Responding to recent developments and a growing VLSI circuit manufacturing market, Technology Computer Aided Design: Simulation for VLSI MOSFET examines advanced MOSFET processes and devices through TCAD numerical simulations. The book provides a balanced summary of TCAD and MOSFET basic concepts, equations, physics, and new technologies related to TCAD and MOSFET. A firm grasp of these concepts allows for the design of better models, thus streamlining the design process, saving time and money. This book places emphasis on the importance of modeling and simulations of VLSI MOS transistors and TCAD software. Providing background concepts involved in the TCAD simulation of MOSFET devices, it presents concepts in a simplified manner, frequently using comparisons to everyday-life experiences. The book then explains concepts in depth, with required mathematics and program code. This book also details the classical semiconductor physics for understanding the principle of operations for VLSI MOS transistors, illustrates recent developments in the area of MOSFET and other electronic devices, and analyzes the evolution of the role of modeling and simulation of MOSFET. It also provides exposure to the two most commercially popular TCAD simulation tools Silvaco and Sentaurus. • Emphasizes the need for TCAD simulation to be included within VLSI design flow for nano-scale integrated circuits • Introduces the advantages of TCAD simulations for device and process technology characterization • Presents the fundamental physics and mathematics incorporated in the TCAD tools • Includes popular commercial TCAD simulation tools (Silvaco and Sentaurus) • Provides characterization of performances of VLSI MOSFETs through TCAD tools • Offers familiarization to compact modeling for VLSI circuit simulation R&D cost and time for electronic product development is drastically reduced by taking advantage of TCAD tools, making it indispensable for modern VLSI device technologies. They provide a means to characterize the MOS transistors and improve the VLSI circuit simulation procedure. The comprehensive information and systematic approach to design, characterization, fabrication, and computation of VLSI MOS transistor through TCAD tools presented in this book provides a thorough foundation for the development of models that simplify the design verification process and make it cost effective.
Author : NANDITA DASGUPTA
Publisher : PHI Learning Pvt. Ltd.
ISBN 13 : 812032398X
Total Pages : 342 pages
Book Rating : 4.1/5 (23 download)
Download or read book SEMICONDUCTOR DEVICES written by NANDITA DASGUPTA and published by PHI Learning Pvt. Ltd.. This book was released on 2004-01-01 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: Aimed primarily at the undergraduate students pursuing courses in semiconductor physics and semiconductor devices, this text emphasizes the physical understanding of the underlying principles of the subject. Since engineers use semiconductor devices as circuit elements, device models commonly used in the circuit simulators, e.g. SPICE, have been discussed in detail. Advanced topics such as lasers, heterojunction bipolar transistors, second order effects in BJTs, and MOSFETs are also covered. With such in-depth coverage and a practical approach, practising engineers and PG students can also use this book as a ready reference.
Author : Antonio Rogalski
Publisher : CRC Press
ISBN 13 : 1420076728
Total Pages : 900 pages
Book Rating : 4.4/5 (2 download)
Download or read book Infrared Detectors written by Antonio Rogalski and published by CRC Press. This book was released on 2010-11-15 with total page 900 pages. Available in PDF, EPUB and Kindle. Book excerpt: Completely revised and reorganized while retaining the approachable style of the first edition, Infrared Detectors, Second Edition addresses the latest developments in the science and technology of infrared (IR) detection. Antoni Rogalski, an internationally recognized pioneer in the field, covers the comprehensive range of subjects necessary to un
Author : Olof Engström
Publisher : Cambridge University Press
ISBN 13 : 1107005930
Total Pages : 369 pages
Book Rating : 4.1/5 (7 download)
Download or read book The MOS System written by Olof Engström and published by Cambridge University Press. This book was released on 2014-09-25 with total page 369 pages. Available in PDF, EPUB and Kindle. Book excerpt: A detailed, up-to-date guide to modern MOS structures, describing key tools, cutting-edge models, novel phenomena and challenges for future development. Abstract concepts are supported by practical examples and presented alongside recent theoretical and experimental results. An ideal companion for researchers, graduate students and industrial development engineers.
Author : Dino Esposito
Publisher : Microsoft Press
ISBN 13 : 1509300546
Total Pages : 1061 pages
Book Rating : 4.5/5 (93 download)
Download or read book Modern Web Development written by Dino Esposito and published by Microsoft Press. This book was released on 2016-02-22 with total page 1061 pages. Available in PDF, EPUB and Kindle. Book excerpt: Master powerful new approaches to web architecture, design, and user experience This book presents a pragmatic, problem-driven, user-focused approach to planning, designing, and building dynamic web solutions. You’ll learn how to gain maximum value from Domain-Driven Design (DDD), define optimal supporting architecture, and succeed with modern UX-first design approaches. The author guides you through choosing and implementing specific technologies and addresses key user-experience topics, including mobile-friendly and responsive design. You’ll learn how to gain more value from existing Microsoft technologies such as ASP.NET MVC and SignalR by using them alongside other technologies such as Bootstrap, AJAX, JSON, and JQuery. By using these techniques and understanding the new ASP.NET Core 1.0, you can quickly build advanced web solutions that solve today’s problems and deliver an outstanding user experience. Microsoft MVP Dino Esposito shows you how to: Plan websites and web apps to mirror real-world social and business processes Use DDD to dissect and master the complexity of business domains Use UX-Driven Design to reduce costs and give customers what they want Realistically compare server-side and client-side web paradigms Get started with the new ASP.NET Core 1.0 Simplify modern visual webpage construction with Bootstrap Master practical, efficient techniques for running ASP.NET MVC projects Consider new options for implementing persistence and working with data models Understand Responsive Web Design’s pros, cons, and tradeoffs Build truly mobile-friendly, mobile-optimized websites About This Book For experienced developers and solution architects who want to plan and develop web solutions more effectively Assumes basic familiarity with the Microsoft web development stack
Author : Howard Huff
Publisher : Springer Science & Business Media
ISBN 13 : 9783540210818
Total Pages : 740 pages
Book Rating : 4.2/5 (18 download)
Download or read book High Dielectric Constant Materials written by Howard Huff and published by Springer Science & Business Media. This book was released on 2005 with total page 740 pages. Available in PDF, EPUB and Kindle. Book excerpt: Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.
Author :
Publisher :
ISBN 13 :
Total Pages : 526 pages
Book Rating : 4.0/5 ( download)
Download or read book VLSI Science and Technology written by and published by . This book was released on 1984 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt:
