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Modeling Nanoscale Quasi Ballistic Mos Transistors
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Book Synopsis Nanoscale MOS Transistors by : David Esseni
Download or read book Nanoscale MOS Transistors written by David Esseni and published by Cambridge University Press. This book was released on 2011-01-20 with total page 489 pages. Available in PDF, EPUB and Kindle. Book excerpt: Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: • Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials • All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework • Predictive capabilities of device models, discussed with systematic comparisons to experimental results
Book Synopsis Carrier Transport in Nanoscale MOS Transistors by : Hideaki Tsuchiya
Download or read book Carrier Transport in Nanoscale MOS Transistors written by Hideaki Tsuchiya and published by John Wiley & Sons. This book was released on 2017-06-13 with total page 265 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive advanced level examination of the transport theory of nanoscale devices Provides advanced level material of electron transport in nanoscale devices from basic principles of quantum mechanics through to advanced theory and various numerical techniques for electron transport Combines several up-to-date theoretical and numerical approaches in a unified manner, such as Wigner-Boltzmann equation, the recent progress of carrier transport research for nanoscale MOS transistors, and quantum correction approximations The authors approach the subject in a logical and systematic way, reflecting their extensive teaching and research backgrounds
Book Synopsis Nanoscale Transistors by : Mark Lundstrom
Download or read book Nanoscale Transistors written by Mark Lundstrom and published by Springer Science & Business Media. This book was released on 2006-06-18 with total page 223 pages. Available in PDF, EPUB and Kindle. Book excerpt: To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. After basic concepts are reviewed, the text summarizes the essentials of traditional semiconductor devices, digital circuits, and systems to supply a baseline against which new devices can be assessed. A nontraditional view of the MOSFET using concepts that are valid at nanoscale is developed and then applied to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. This practical guide then explore the limits of devices by discussing conduction in single molecules
Book Synopsis Compact Modeling by : Gennady Gildenblat
Download or read book Compact Modeling written by Gennady Gildenblat and published by Springer Science & Business Media. This book was released on 2010-06-22 with total page 531 pages. Available in PDF, EPUB and Kindle. Book excerpt: Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.
Book Synopsis Modeling of III-V Nanoscale Field-effect Transistors for Logic Circuits by : Saeroonter Oh
Download or read book Modeling of III-V Nanoscale Field-effect Transistors for Logic Circuits written by Saeroonter Oh and published by Stanford University. This book was released on 2010 with total page 147 pages. Available in PDF, EPUB and Kindle. Book excerpt: As silicon CMOS technology continues to scale down its minimum critical dimension, it becomes increasingly difficult to enhance device switching speed due to fundamental limitations. Innovations in device structure and materials are pursued to accommodate improvement in performance as well as reduction in transistor size. For beyond-22-nm CMOS technology, III-V channel FETs are considered as a compelling candidate for extending the device scaling limit of low-power and high-speed operation, owing to their superb carrier transport properties and recent experimental advancements. In this thesis, device simulation, compact modeling, circuit design, circuit performance assessment and estimation of III-V logic transistors are carried out to study key considerations such as device pitch, parasitics, and the importance of PMOS for circuit-level performance. To effectively connect device characteristics with circuit design, a physics-based compact model for digital logic is constructed. The model encompasses effects such as field-confined and spatially-confined trapezoidal quantum well sub-band energies, gate leakage tunneling current and parasitic capacitance. The developed compact model contains only three fitting parameters and is verified by experiment and circuit simulations. The compact model enables other bodies of work for the purpose of circuit-level design and performance estimation. To demonstrate the capability of the model in a circuit environment we apply the compact model to composite circuits such as FO4 inverter chains and SRAM cache to evaluate and project performance and power trends for beyond-22-nm technology.
Book Synopsis Frontiers In Electronics: Advanced Modeling Of Nanoscale Electron Devices by : Benjamin Iniguez
Download or read book Frontiers In Electronics: Advanced Modeling Of Nanoscale Electron Devices written by Benjamin Iniguez and published by World Scientific. This book was released on 2014-01-10 with total page 204 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book consists of four chapters to address at different modeling levels for different nanoscale MOS structures (Single- and Multi-Gate MOSFETs). The collection of these chapters in the book are attempted to provide a comprehensive coverage on the different levels of electrostatics and transport modeling for these devices, and relationships between them. In particular, the issue of quantum transport approaches, analytical predictive 2D/3D modeling and design-oriented compact modeling. It should be of interests to researchers working on modeling at any level, to provide them with a clear explanation of theapproaches used and the links with modeling techniques for either higher or lower levels.
Book Synopsis Nanoscale Devices by : Brajesh Kumar Kaushik
Download or read book Nanoscale Devices written by Brajesh Kumar Kaushik and published by CRC Press. This book was released on 2018-11-16 with total page 414 pages. Available in PDF, EPUB and Kindle. Book excerpt: The primary aim of this book is to discuss various aspects of nanoscale device design and their applications including transport mechanism, modeling, and circuit applications. . Provides a platform for modeling and analysis of state-of-the-art devices in nanoscale regime, reviews issues related to optimizing the sub-nanometer device performance and addresses simulation aspect and/or fabrication process of devices Also, includes design problems at the end of each chapter
Book Synopsis Nanoscale CMOS by : Francis Balestra
Download or read book Nanoscale CMOS written by Francis Balestra and published by John Wiley & Sons. This book was released on 2013-03-01 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive review of the state-of-the-art in the development of new and innovative materials, and of advanced modeling and characterization methods for nanoscale CMOS devices. Leading global industry bodies including the International Technology Roadmap for Semiconductors (ITRS) have created a forecast of performance improvements that will be delivered in the foreseeable future – in the form of a roadmap that will lead to a substantial enlargement in the number of materials, technologies and device architectures used in CMOS devices. This book addresses the field of materials development, which has been the subject of a major research drive aimed at finding new ways to enhance the performance of semiconductor technologies. It covers three areas that will each have a dramatic impact on the development of future CMOS devices: global and local strained and alternative materials for high speed channels on bulk substrate and insulator; very low access resistance; and various high dielectric constant gate stacks for power scaling. The book also provides information on the most appropriate modeling and simulation methods for electrical properties of advanced MOSFETs, including ballistic transport, gate leakage, atomistic simulation, and compact models for single and multi-gate devices, nanowire and carbon-based FETs. Finally, the book presents an in-depth investigation of the main nanocharacterization techniques that can be used for an accurate determination of transport parameters, interface defects, channel strain as well as RF properties, including capacitance-conductance, improved split C-V, magnetoresistance, charge pumping, low frequency noise, and Raman spectroscopy.
Book Synopsis Future Trends in Microelectronics by : Serge Luryi
Download or read book Future Trends in Microelectronics written by Serge Luryi and published by John Wiley & Sons. This book was released on 2010-08-03 with total page 448 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the summer of 2009, leading professionals from industry, government, and academia gathered for a free-spirited debate on the future trends of microelectronics. This volume represents the summary of their valuable contributions. Providing a cohesive exploration and holistic vision of semiconductor microelectronics, this text answers such questions as: What is the future beyond shrinking silicon devices and the field-effect transistor principle? Are there green pastures beyond the traditional semiconductor technologies? This resource also identifies the direction the field is taking, enabling microelectronics professionals and students to conduct research in an informed, profitable, and forward-looking fashion.
Book Synopsis Computational Science - ICCS 2006 by :
Download or read book Computational Science - ICCS 2006 written by and published by Springer Science & Business Media. This book was released on 2006 with total page 1128 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Computational Science - ICCS 2006 by : Vassil N. Alexandrov
Download or read book Computational Science - ICCS 2006 written by Vassil N. Alexandrov and published by Springer. This book was released on 2006-05-10 with total page 1128 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is Volume IV of the four-volume set LNCS 3991-3994 constituting the refereed proceedings of the 6th International Conference on Computational Science, ICCS 2006. The 98 revised full papers and 29 revised poster papers of the main track presented together with 500 accepted workshop papers were carefully reviewed and selected for inclusion in the four volumes. The coverage spans the whole range of computational science.
Book Synopsis Planar Double-Gate Transistor by : Amara Amara
Download or read book Planar Double-Gate Transistor written by Amara Amara and published by Springer Science & Business Media. This book was released on 2009-01-16 with total page 215 pages. Available in PDF, EPUB and Kindle. Book excerpt: Until the 1990s, the reduction of the minimum feature sizes used to fabricate in- grated circuits, called “scaling”, has highlighted serious advantages as integration density, speed, power consumption, functionality and cost. Direct consequence was the decrease of cost-per-function, so the electronic productivity has largely progressed in this period. Another usually cited trend is the evolution of the in- gration density as expressed by the well-know Moore’s Law in 1975: the number of devices per chip doubles every 2 years. This evolution has allowed improving signi?cantly the circuit complexity, offering a great computing power in the case of microprocessor, for example. However, since few years, signi?cant issues appeared such as the increase of the circuit heating, device complexity, variability and dif?culties to improve the integration density. These new trends generate an important growth in development and production costs. Though is it, since 40 years, the evolution of the microelectronics always f- lowed the Moore’s law and each dif?culty has found a solution.
Book Synopsis Emerging Low-Power Semiconductor Devices by : Shubham Tayal
Download or read book Emerging Low-Power Semiconductor Devices written by Shubham Tayal and published by CRC Press. This book was released on 2022-08-31 with total page 307 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book gives insight into the emerging semiconductor devices from their applications in electronic circuits. It discusses the challenges in the field of engineering and applications of advanced low-power devices. Emerging Low-Power Semiconductor Devices: Applications for Future Technology Nodes offers essential exposure to low-power devices, and applications in wireless, biosensing, and circuit domains. This book provides a detailed discussion on all aspects, including the current and future scenarios related to the low-power device. The book also presents basic knowledge about field-effect transistor (FET) devices and introduces emerging and novel FET devices. The chapters include a review of the usage of FET devices in various domains like biosensing, wireless, and cryogenics applications. The chapters also explore device-circuit co-design issues in the digital and analog domains. The content is presented in an easy-to-follow manner that makes it ideal for individuals new to the subject. This book is intended for scientists, researchers, and postgraduate students looking for an understanding of device physics, circuits, and systems.
Book Synopsis Advanced Nanoelectronics by : Razali Ismail
Download or read book Advanced Nanoelectronics written by Razali Ismail and published by CRC Press. This book was released on 2018-09-03 with total page 459 pages. Available in PDF, EPUB and Kindle. Book excerpt: While theories based on classical physics have been very successful in helping experimentalists design microelectronic devices, new approaches based on quantum mechanics are required to accurately model nanoscale transistors and to predict their characteristics even before they are fabricated. Advanced Nanoelectronics provides research information on advanced nanoelectronics concepts, with a focus on modeling and simulation. Featuring contributions by researchers actively engaged in nanoelectronics research, it develops and applies analytical formulations to investigate nanoscale devices. The book begins by introducing the basic ideas related to quantum theory that are needed to better understand nanoscale structures found in nanoelectronics, including graphenes, carbon nanotubes, and quantum wells, dots, and wires. It goes on to highlight some of the key concepts required to understand nanotransistors. These concepts are then applied to the carbon nanotube field effect transistor (CNTFET). Several chapters cover graphene, an unzipped form of CNT that is the recently discovered allotrope of carbon that has gained a tremendous amount of scientific and technological interest. The book discusses the development of the graphene nanoribbon field effect transistor (GNRFET) and its use as a possible replacement to overcome the CNT chirality challenge. It also examines silicon nanowire (SiNW) as a new candidate for achieving the downscaling of devices. The text describes the modeling and fabrication of SiNW, including a new top-down fabrication technique. Strained technology, which changes the properties of device materials rather than changing the device geometry, is also discussed. The book ends with a look at the technical and economic challenges that face the commercialization of nanoelectronics and what universities, industries, and government can do to lower the barriers. A useful resource for professionals, researchers, and scientists, this work brings together state-of-the-art technical and scientific information on important topics in advanced nanoelectronics.
Book Synopsis Fundamentals of Nanoscaled Field Effect Transistors by : Amit Chaudhry
Download or read book Fundamentals of Nanoscaled Field Effect Transistors written by Amit Chaudhry and published by Springer Science & Business Media. This book was released on 2013-04-23 with total page 211 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.
Book Synopsis Low-Power CMOS Circuits by : Christian Piguet
Download or read book Low-Power CMOS Circuits written by Christian Piguet and published by CRC Press. This book was released on 2018-10-03 with total page 438 pages. Available in PDF, EPUB and Kindle. Book excerpt: The power consumption of microprocessors is one of the most important challenges of high-performance chips and portable devices. In chapters drawn from Piguet's recently published Low-Power Electronics Design, Low-Power CMOS Circuits: Technology, Logic Design, and CAD Tools addresses the design of low-power circuitry in deep submicron technologies. It provides a focused reference for specialists involved in designing low-power circuitry, from transistors to logic gates. The book is organized into three broad sections for convenient access. The first examines the history of low-power electronics along with a look at emerging and possible future technologies. It also considers other technologies, such as nanotechnologies and optical chips, that may be useful in designing integrated circuits. The second part explains the techniques used to reduce power consumption at low levels. These include clock gating, leakage reduction, interconnecting and communication on chips, and adiabatic circuits. The final section discusses various CAD tools for designing low-power circuits. This section includes three chapters that demonstrate the tools and low-power design issues at three major companies that produce logic synthesizers. Providing detailed examinations contributed by leading experts, Low-Power CMOS Circuits: Technology, Logic Design, and CAD Tools supplies authoritative information on how to design and model for high performance with low power consumption in modern integrated circuits. It is a must-read for anyone designing modern computers or embedded systems.
Book Synopsis Low-Power Electronics Design by : Christian Piguet
Download or read book Low-Power Electronics Design written by Christian Piguet and published by CRC Press. This book was released on 2018-10-03 with total page 896 pages. Available in PDF, EPUB and Kindle. Book excerpt: The power consumption of integrated circuits is one of the most problematic considerations affecting the design of high-performance chips and portable devices. The study of power-saving design methodologies now must also include subjects such as systems on chips, embedded software, and the future of microelectronics. Low-Power Electronics Design covers all major aspects of low-power design of ICs in deep submicron technologies and addresses emerging topics related to future design. This volume explores, in individual chapters written by expert authors, the many low-power techniques born during the past decade. It also discusses the many different domains and disciplines that impact power consumption, including processors, complex circuits, software, CAD tools, and energy sources and management. The authors delve into what many specialists predict about the future by presenting techniques that are promising but are not yet reality. They investigate nanotechnologies, optical circuits, ad hoc networks, e-textiles, as well as human powered sources of energy. Low-Power Electronics Design delivers a complete picture of today's methods for reducing power, and also illustrates the advances in chip design that may be commonplace 10 or 15 years from now.
