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Modeling Fabrication And Characterization Of Pnp Heterojunction Bipolar Transistors
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Book Synopsis Modeling, Fabrication and Characterization of Pnp Heterojunction Bipolar Transistors by : David Allen Sunderland
Download or read book Modeling, Fabrication and Characterization of Pnp Heterojunction Bipolar Transistors written by David Allen Sunderland and published by . This book was released on 1987 with total page 536 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fabrication, Characterization and Modeling of NPN InGaP/GaAs Heterojunction Bipolar Transistors by : Ying Wu
Download or read book Fabrication, Characterization and Modeling of NPN InGaP/GaAs Heterojunction Bipolar Transistors written by Ying Wu and published by . This book was released on 1996 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Large-signal Characterization and Modeling of the Heterojunction Bipolar Transistor by : Douglas Andrew Teeter
Download or read book Large-signal Characterization and Modeling of the Heterojunction Bipolar Transistor written by Douglas Andrew Teeter and published by . This book was released on 1992 with total page 546 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Fabrication and Characterization of InP-based Heterojunction Bipolar Transistors by : James C. Vlcek
Download or read book The Fabrication and Characterization of InP-based Heterojunction Bipolar Transistors written by James C. Vlcek and published by . This book was released on 1985 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Heterojunction Bipolar Transistors for Circuit Design by : Jianjun Gao
Download or read book Heterojunction Bipolar Transistors for Circuit Design written by Jianjun Gao and published by John Wiley & Sons. This book was released on 2015-04-27 with total page 394 pages. Available in PDF, EPUB and Kindle. Book excerpt: A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications. The book details the accurate device modeling for HBTs and high level IC design using HBTs Provides a valuable reference to basic modeling issues and specific semiconductor device models encountered in circuit simulators, with a thorough reference list at the end of each chapter for onward learning Offers an overview on modeling techniques and parameter extraction methods for heterojunction bipolar transistors focusing on circuit simulation and design Presents electrical/RF engineering-related theory and tools and include equivalent circuits and their matrix descriptions, noise, small and large signal analysis methods
Book Synopsis Modeling and Characterization of Abrupt Heterojunction Bipolar Transistors by : Kyounghoon Yang
Download or read book Modeling and Characterization of Abrupt Heterojunction Bipolar Transistors written by Kyounghoon Yang and published by . This book was released on 1994 with total page 396 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fabrication and Modeling of InGaP/GaAs Heterojunction Bipolar Transistor by : Sung-Jin Ho
Download or read book Fabrication and Modeling of InGaP/GaAs Heterojunction Bipolar Transistor written by Sung-Jin Ho and published by . This book was released on 2007 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Simulation, Design, and Fabrication of InP-based Pnp Heterojunction Bipolar Transistors by : Suman Datta
Download or read book Simulation, Design, and Fabrication of InP-based Pnp Heterojunction Bipolar Transistors written by Suman Datta and published by . This book was released on 1999 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Design and Realization of Bipolar Transistors by : Peter Ashburn
Download or read book Design and Realization of Bipolar Transistors written by Peter Ashburn and published by . This book was released on 1988-08-18 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addresses new developments in the design and fabrication of bipolar transistors for high-speed digital circuits. Covers advances in silicon technology (such as polysilicon emitters and self-aligned fabrication techniques), gallium arsenide technology (such as extremely high-performance MSI circuits resulting from the development of GaAs/GaAlAs heterojunctions), and new applications of bipolar transistors (such as optoelectronic circuits). Also deals with optimization of bipolar devices and processes for high-speed, digital circuits by means of a quasi-analytical expression for the gate delay of an ECL logic gate. Includes case studies.
Book Synopsis Large Signal Characterization and Modeling of Heterojunction Bipolar Transistors by :
Download or read book Large Signal Characterization and Modeling of Heterojunction Bipolar Transistors written by and published by . This book was released on 1993 with total page 29 pages. Available in PDF, EPUB and Kindle. Book excerpt: The high power operation of the heterojunction bipolar transistor (HBT) has been analyzed by experimentally determining the junction temperature and separating temperature effects from other high power effects. In addition, an HBT large signal model has been developed that is valid for the linear, saturation, and cutoff regions, with low frequency temperature effects included. This model has been implemented in a commercial harmonic balance simulator, LIBRA from EEsof, making it particularly suitable for the design and simulation of HBT microwave power integrated circuits. In addition, an analysis of the most temperature-sensitive microwave elements for the HBT has been performed using measured s-parameter data at five elevated temperatures from 23 deg. C to 226 deg. C. The element values were compared to a physical model showing excellent agreement in magnitude and direction of change with temperature and bias. The transistor cutoff frequencies were also measured and calculated, showing a monotonic decrease with temperature of approximately 50% over the 200 deg. C range. Heterojunction Bipolar Transistor, Large Signal Modeling, Thermal Effects.
Book Synopsis Characterization and Modeling of Inp/Gainas Heterojunction Bipolar Transistors by : Solon Jose Spiegel
Download or read book Characterization and Modeling of Inp/Gainas Heterojunction Bipolar Transistors written by Solon Jose Spiegel and published by . This book was released on 1996 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fabrication and Characterization of Compositionally-graded Indium Phosphide Based Type-II Double Heterojunction Bipolar Transistors by : William K. Snodgrass
Download or read book Fabrication and Characterization of Compositionally-graded Indium Phosphide Based Type-II Double Heterojunction Bipolar Transistors written by William K. Snodgrass and published by . This book was released on 2007 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Thermal Characterization and Modeling of Heterojunction Bipolar Transistors by : David S. Whitefield
Download or read book Thermal Characterization and Modeling of Heterojunction Bipolar Transistors written by David S. Whitefield and published by . This book was released on 1993 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis A Heterojunction Bipolar Transistor with Stepwise Allog-graded Base by : Konstantinos Konistis
Download or read book A Heterojunction Bipolar Transistor with Stepwise Allog-graded Base written by Konstantinos Konistis and published by . This book was released on 2004 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt: (Cont.) features but the device self-heating turned out to be crucial for the longevity of the base micro-airbridges. The short lifetime of the base micro-airbridges was prohibitive for the realization of high frequency measurements. This work serves as the foundation for the implementation of robust HBT transit-time oscillators with the incorporation of slight modifications in the fabrication process.
Book Synopsis Fabrication and Characterization of InP/InGaAs Metamorphic Heterojunction Bipolar Transistors (HBTs) by : Hong Yang
Download or read book Fabrication and Characterization of InP/InGaAs Metamorphic Heterojunction Bipolar Transistors (HBTs) written by Hong Yang and published by . This book was released on 2005 with total page 133 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fabrication and Characterization of Indium Phosphide (InP) Heterojunction Bipolar Transistors (HBTs) by : 廖育資
Download or read book Fabrication and Characterization of Indium Phosphide (InP) Heterojunction Bipolar Transistors (HBTs) written by 廖育資 and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Advanced Modeling of Silicon-Germanium Heterojunction Bipolar Transistors by : Andreas Pawlak
Download or read book Advanced Modeling of Silicon-Germanium Heterojunction Bipolar Transistors written by Andreas Pawlak and published by Tudpress Verlag Der Wissenschaften Gmbh. This book was released on 2015-10-14 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) are perfectly suited for high-speed electronics. Since the fabrication costs per design cycle are rapidly increasing with progressing frequency and complexity of the systems, accurate compact models are essential in order to enable robust circuit design. This thesis focuses on selected important physical effects in advanced SiGe HBTs, which have been either insufficiently modeled or completely missing in conventional compact models. New compact model equations for the transfer current were derived and successfully applied to a large set of different technologies. Hereby, the "Generalized Integral Charge Control Relation" was used as a foundation. A physics-based model utilizing small-signal parameters obtained from measurements is derived for modeling the current dependent collector charge. A brief chapter about substrate effects in bipolar transistors comprises the derivation of a compact model for the bias-dependent substrate resistance as well as a proper partitioning of the substrate capacitance. New extraction methods for compact model parameters are introduced and the application of existing methods to advanced processes is discussed. The derived joint extraction method for the emitter and thermal resistance as well as a scalable model for the transfer current have been successfully applied to experimental data of fast HBTs. The derived model equations were applied to a selected very advanced SiGe HBT process developed by IHP. Highly accurate models for DC- and small-signal as well as for large-signal characteristics are presented.
