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Author : Tracy Blake
Publisher :
ISBN 13 :
Total Pages : 188 pages
Book Rating : 4.:/5 (622 download)
Download or read book Modeling and Simulation of Silicon Carbide Power Semiconductor Devices written by Tracy Blake and published by . This book was released on 2005 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Pushpakaran Bejoy N
Publisher : World Scientific
ISBN 13 : 9813237848
Total Pages : 464 pages
Book Rating : 4.8/5 (132 download)
Download or read book Modeling And Electrothermal Simulation Of Sic Power Devices: Using Silvaco© Atlas written by Pushpakaran Bejoy N and published by World Scientific. This book was released on 2019-03-25 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt: The primary goal of this book is to provide a sound understanding of wide bandgap Silicon Carbide (SiC) power semiconductor device simulation using Silvaco© ATLAS Technology Computer Aided Design (TCAD) software. Physics-based TCAD modeling of SiC power devices can be extremely challenging due to the wide bandgap of the semiconductor material. The material presented in this book aims to shorten the learning curve required to start successful SiC device simulation by providing a detailed explanation of simulation code and the impact of various modeling and simulation parameters on the simulation results. Non-isothermal simulation to predict heat dissipation and lattice temperature rise in a SiC device structure under switching condition has been explained in detail. Key pointers including runtime error messages, code debugging, implications of using certain models and parameter values, and other factors beneficial to device simulation are provided based on the authors' experience while simulating SiC device structures. This book is useful for students, researchers, and semiconductor professionals working in the area of SiC semiconductor technology. Readers will be provided with the source code of several fully functional simulation programs that illustrate the use of Silvaco© ATLAS to simulate SiC power device structure, as well as supplementary material for download.
Author : B. Jayant Baliga
Publisher : World Scientific
ISBN 13 : 9812774521
Total Pages : 526 pages
Book Rating : 4.8/5 (127 download)
Download or read book Silicon Carbide Power Devices written by B. Jayant Baliga and published by World Scientific. This book was released on 2006-01-05 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices. Sample Chapter(s). Chapter 1: Introduction (72 KB). Contents: Material Properties and Technology; Breakdown Voltage; PiN Rectifiers; Schottky Rectifiers; Shielded Schottky Rectifiers; Metal-Semiconductor Field Effect Transistors; The Baliga-Pair Configuration; Planar Power MOSFETs; Shielded Planar MOSFETs; Trench-Gate Power MOSFETs; Shielded Trendch-Gate MOSFETs; Charge Coupled Structures; Integral Diodes; Lateral High Voltage FETs; Synopsis. Readership: For practising engineers working on power devices, and as a supplementary textbook for a graduate level course on power devices.
Author : Martin Lades
Publisher :
ISBN 13 : 9783826597992
Total Pages : 161 pages
Book Rating : 4.5/5 (979 download)
Download or read book Modeling and Simulation of Wide Bandgap Semiconductor Devices written by Martin Lades and published by . This book was released on 2002 with total page 161 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Heiner Ryssel
Publisher : Springer Science & Business Media
ISBN 13 : 3709166195
Total Pages : 515 pages
Book Rating : 4.7/5 (91 download)
Download or read book Simulation of Semiconductor Devices and Processes written by Heiner Ryssel and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 515 pages. Available in PDF, EPUB and Kindle. Book excerpt: SISDEP ’95 provides an international forum for the presentation of state-of-the-art research and development results in the area of numerical process and device simulation. Continuously shrinking device dimensions, the use of new materials, and advanced processing steps in the manufacturing of semiconductor devices require new and improved software. The trend towards increasing complexity in structures and process technology demands advanced models describing all basic effects and sophisticated two and three dimensional tools for almost arbitrarily designed geometries. The book contains the latest results obtained by scientists from more than 20 countries on process simulation and modeling, simulation of process equipment, device modeling and simulation of novel devices, power semiconductors, and sensors, on device simulation and parameter extraction for circuit models, practical application of simulation, numerical methods, and software.
Author : Blake Whitmore Nelson
Publisher :
ISBN 13 :
Total Pages : 103 pages
Book Rating : 4.:/5 (12 download)
Download or read book Spice Modeling and Simulation of Silicon-carbide Power Modules written by Blake Whitmore Nelson and published by . This book was released on 2017 with total page 103 pages. Available in PDF, EPUB and Kindle. Book excerpt: The design of power converters relies on computer modeling to accurately predict system electrical and thermal behavior prior to implementation. In the field of wide bandgap semiconductors, the extraordinarily high switching speed of silicon-carbide devices dictates that traditionally inconsequential parasitic elements can impact system level behavior. This is especially true for systems implementing multi-chip power modules. To ensure accurate simulations, a new and precise methodology for modeling these systems is needed. This thesis formulates a measurement based and empirically-validated methodology for modeling wide bandgap power modules. First, impedance analysis is used to create a parasitic model of the power module's frequency domain behavior. Second, double pulse testing is implemented to characterize the dynamic behavior of the power module. Next, a SPICE model is developed from the frequency and time domain measurements. Finally, the model is validated through its accurate prediction of time domain waveforms and switching losses.
Author : B Jayant Baliga
Publisher : Springer
ISBN 13 : 9781489977656
Total Pages : 1096 pages
Book Rating : 4.9/5 (776 download)
Download or read book Fundamentals of Power Semiconductor Devices written by B Jayant Baliga and published by Springer. This book was released on 2016-04-01 with total page 1096 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown.
Author : B Jayant Baliga
Publisher : World Scientific
ISBN 13 : 9811284296
Total Pages : 671 pages
Book Rating : 4.8/5 (112 download)
Download or read book Modern Silicon Carbide Power Devices written by B Jayant Baliga and published by World Scientific. This book was released on 2023-09-18 with total page 671 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide power devices are being increasingly adopted for many applications such as electric vehicles and charging stations. There is a large demand for a resource to learn and understand the basic physics of operation of these devices to create engineers with in depth knowledge about them.This unique compendium provides a comprehensive design guide for Silicon Carbide power devices. It systematically describes the device structures and analytical models for computing their characteristics. The device structures included are the Schottky diode, JBS rectifier, power MOSFET, JBSFET, IGBT and BiDFET. Unique structures that address achieving excellent voltage blocking and on-resistance are emphasized.This useful textbook and reference innovations for achieving superior high frequency operation and highlights manufacturing technology for the devices. The book will benefit professionals, academics, researchers and graduate students in the fields of electrical and electronic engineering, circuits and systems, semiconductors, and energy studies.
Author : Marco Zorzi (omonimi non identificati)
Publisher :
ISBN 13 :
Total Pages : 219 pages
Book Rating : 4.:/5 (18 download)
Download or read book Modeling and Simulation of Smart-power Semiconductor Devices written by Marco Zorzi (omonimi non identificati) and published by . This book was released on 2003 with total page 219 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : B. Jayant Baliga
Publisher : Springer
ISBN 13 : 9780387564401
Total Pages : 1072 pages
Book Rating : 4.5/5 (644 download)
Download or read book Fundamentals of Power Semiconductor Devices written by B. Jayant Baliga and published by Springer. This book was released on 2010-11-16 with total page 1072 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.
Author : Haonan Jia
Publisher :
ISBN 13 :
Total Pages : 88 pages
Book Rating : 4.:/5 (124 download)
Download or read book Design and Simulation of Power Electronics Modules written by Haonan Jia and published by . This book was released on 2020 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide (SiC), a wide-bandgap semiconductor material, greatly improves the performance of power semiconductor devices. Its electrical characteristics have a positive impact on the size, efficiency, and weight of the power electronics systems. Parasitic circuit elements and thermal properties are critical to the power electronics module design. This thesis investigates the various aspects of layout design, electrical simulation, thermal simulation, and peripheral design of SiC power electronic modules. ANSYS simulator was used to design and simulate the power electronic modules. The parasitic circuit elements of the power module were obtained from the device parameters given in the datasheet of these SiC bare devices together with the model established in the Q3D simulator. A temperature simulation model is established using SolidWorks to investigate the thermal performance of the power module. The designs of soldering and sintering fixtures are presented. A 1.7kV silicon carbide (SiC) junction field-effect transistor (JFET) cascode power electronic module was designed as an example. By comparing the different module designs, some conclusions are elucidated.
Author : Liangchun Yu
Publisher :
ISBN 13 :
Total Pages : 111 pages
Book Rating : 4.:/5 (667 download)
Download or read book Simulation, Modeling and Characterization of SiC Devices written by Liangchun Yu and published by . This book was released on 2010 with total page 111 pages. Available in PDF, EPUB and Kindle. Book excerpt: With superior material properties, Silicon carbide (SiC) power devices show great potential for high-power density, high temperature switching applications. Among all the power device structures, SiC MOSFET attracts the most attention because of its high gate input impedance, simple gate control and fast switching speed. However, low inversion channel mobility, high near-interface state density close to the conduction band edge, questionable oxide reliability as well as theoretical limit on the device figure-of-merit still remain to be significant challenges to the development of SiC power MOSFETs. In this dissertation, all of the above challenges are addressed from various approaches. First, simulations on the super-junction structure show that the unipolar theoretical limit of SiC can be broken even with the state-of-the-art processing technologies. An easy-to-implement analytical model is developed for calculations of the blocking voltage, specific on-resistance and charge imbalance effects of 4H-SiC super-junction devices. This model is validated by extensive numerical simulations with a large variety of device parameters. Device design and optimization using this model are also presented. Second, a wafer-level Hall mobility measurement technique is developed to measure channel mobility more accurately, more efficiently and more cost-effectively. Device characterization and development are much more convenient by using this technique. With this method, further explorations of interactions between interface traps and channel carriers as well as device degradation mechanisms become possible. Third, reliability of SiO2 on 4H-SiC is characterized with time dependent dielectric breakdown (TDDB) measurements at various temperatures and electric fields. Lifetime prediction to normal operation conditions suggests that the oxide on SiC has a characteristic lifetime of 10 years at 375° C if the oxide electric field is kept below 4.6 MV/cm. The observed excellent reliability data contradict the widespread belief that the oxide on SiC is intrinsically limited by its physical properties. Detailed discussions are provided to re-examine the arguments leading to the misconception.
Author : Yanming Xu
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (135 download)
Download or read book Research on Modern Power Semiconductor Modelling Methodology for Efficiency Evaluation of Power Electronic Systems in Electromagnetic Transient Simulation written by Yanming Xu and published by . This book was released on 2021 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power electronics technology has rapidly developed during the past decades. Power electronics systems aim to achieve high efficiency as power conversion interfaces while fulfilling the performance and reliability requirements. The key to achieving these objectives is power semiconductors, which dictate the power electronics system's efficiency, power density, and reliability. In recent years, traditional Silicon (Si) devices are reaching their material limits. Meanwhile, new Wide-Bandgap (WBG) devices such as Silicon Carbide (SiC) and Gallium Nitride (GaN) devices have been commercialized, featuring high breakdown voltage, fast switching speed, and high thermal capability. On the other hand, semiconductor devices are typically exposed to repetitive heat pulses and are often the most critical components affecting system reliability. Consequently, a comprehensive modelling method for modern power semiconductors that can describe various devices' switching behaviors is highly desirable by power electronics engineers and manufacturers. This research focuses on developing a simulation-based modelling methodology for modern power semiconductors to evaluate the power electronics system's efficiency. A multi-level simulation strategy has been proposed and implemented in PSCAD/EMTDC. A generalized transient semiconductor model has been developed, which can reproduce the device's switching behaviors. Subsequently, the power losses are obtained to form a multi-dimensional power loss look-up table under a wide range of operating conditions. A dynamic thermal model for temperature estimation, and a typical electrical network using simple switch models for semiconductor devices have been implemented. The junction temperature is updated every switching cycle by the power loss with a thermal model and influence back to the electrical simulation. In this way, a closed-loop electro-thermal simulation is formed to evaluate both electrical and thermal performances in a single simulator with a range of acceptable accuracy. A double pulse test platform has been designed and built for device characterizations and power loss verifications. Moreover, a single-phase grid-tied buck-boost type inverter application has been selected as a case study and built to study the proposed method. The measured results indicate that the proposed approach is highly promising for power electronics engineers to evaluate and optimize a system during the early design stage.
Author : Ali Rahimi (Auteur de Modeling and simulation of high speed semiconductors used in GaN and SiC power converters)
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (133 download)
Download or read book Modeling and Simulation of High Speed Semiconductors Used in GaN and SiC Power Converters written by Ali Rahimi (Auteur de Modeling and simulation of high speed semiconductors used in GaN and SiC power converters) and published by . This book was released on 2021 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Christopher M. Snowden
Publisher : World Scientific
ISBN 13 : 9789810236939
Total Pages : 242 pages
Book Rating : 4.2/5 (369 download)
Download or read book Introduction to Semiconductor Device Modelling written by Christopher M. Snowden and published by World Scientific. This book was released on 1998 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
Author : Viktoryia Uhnevionak
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (92 download)
Download or read book Simulation and Modeling of Silicon Carbide Devices written by Viktoryia Uhnevionak and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Siegfried Selberherr
Publisher : Springer Science & Business Media
ISBN 13 : 3709166578
Total Pages : 525 pages
Book Rating : 4.7/5 (91 download)
Download or read book Simulation of Semiconductor Devices and Processes written by Siegfried Selberherr and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 525 pages. Available in PDF, EPUB and Kindle. Book excerpt: The "Fifth International Conference on Simulation of Semiconductor Devices and Processes" (SISDEP 93) continues a series of conferences which was initiated in 1984 by K. Board and D. R. J. Owen at the University College of Wales, Swansea, where it took place a second time in 1986. Its organization was succeeded by G. Baccarani and M. Rudan at the University of Bologna in 1988, and W. Fichtner and D. Aemmer at the Federal Institute of Technology in Zurich in 1991. This year the conference is held at the Technical University of Vienna, Austria, September 7 - 9, 1993. This conference shall provide an international forum for the presentation of out standing research and development results in the area of numerical process and de vice simulation. The miniaturization of today's semiconductor devices, the usage of new materials and advanced process steps in the development of new semiconduc tor technologies suggests the design of new computer programs. This trend towards more complex structures and increasingly sophisticated processes demands advanced simulators, such as fully three-dimensional tools for almost arbitrarily complicated geometries. With the increasing need for better models and improved understand ing of physical effects, the Conference on Simulation of Semiconductor Devices and Processes brings together the simulation community and the process- and device en gineers who need reliable numerical simulation tools for characterization, prediction, and development.
