Modeling And Simulation Of Gan Based High Electron Mobility Transistors

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Handbook for III-V High Electron Mobility Transistor Technologies

Author : D. Nirmal
Publisher : CRC Press
ISBN 13 : 0429862520
Total Pages : 434 pages
Book Rating : 4.4/5 (298 download)

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Book Synopsis Handbook for III-V High Electron Mobility Transistor Technologies by : D. Nirmal

Download or read book Handbook for III-V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

Nitride Semiconductor Devices

Author : Joachim Piprek
Publisher : John Wiley & Sons
ISBN 13 : 3527406670
Total Pages : 521 pages
Book Rating : 4.5/5 (274 download)

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Book Synopsis Nitride Semiconductor Devices by : Joachim Piprek

Download or read book Nitride Semiconductor Devices written by Joachim Piprek and published by John Wiley & Sons. This book was released on 2007-04-09 with total page 521 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book to be published on physical principles, mathematical models, and practical simulation of GaN-based devices. Gallium nitride and its related compounds enable the fabrication of highly efficient light-emitting diodes and lasers for a broad spectrum of wavelengths, ranging from red through yellow and green to blue and ultraviolet. Since the breakthrough demonstration of blue laser diodes by Shuji Nakamura in 1995, this field has experienced tremendous growth worldwide. Various applications can be seen in our everyday life, from green traffic lights to full-color outdoor displays to high-definition DVD players. In recent years, nitride device modeling and simulation has gained importance and advanced software tools are emerging. Similar developments occurred in the past with other semiconductors such as silicon, where computer simulation is now an integral part of device development and fabrication. This book presents a review of modern device concepts and models, written by leading researchers in the field. It is intended for scientists and device engineers who are interested in employing computer simulation for nitride device design and analysis.

Gallium Nitride Power Devices

Author : Hongyu Yu
Publisher : CRC Press
ISBN 13 : 1351767607
Total Pages : 301 pages
Book Rating : 4.3/5 (517 download)

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Book Synopsis Gallium Nitride Power Devices by : Hongyu Yu

Download or read book Gallium Nitride Power Devices written by Hongyu Yu and published by CRC Press. This book was released on 2017-07-06 with total page 301 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.

Advanced SPICE Model for GaN HEMTs (ASM-HEMT)

Author : Sourabh Khandelwal
Publisher :
ISBN 13 : 9783030777319
Total Pages : 0 pages
Book Rating : 4.7/5 (773 download)

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Book Synopsis Advanced SPICE Model for GaN HEMTs (ASM-HEMT) by : Sourabh Khandelwal

Download or read book Advanced SPICE Model for GaN HEMTs (ASM-HEMT) written by Sourabh Khandelwal and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a new industry standard model for GaN-based power and RF circuit design. The author describes this new, standard model in detail, covering the different components of the ASM GaN model from fundamental derivations to the implementation in circuit simulation tools. The book also includes a detailed description of parameter extraction steps and model quality tests, which are critically important for effective use of this standard model in circuit simulation and product design. Coverage includes both radio-frequency (RF), and power electronics applications of this model. Practical issues related to measurement data and parameter extraction flow are also discussed, enabling readers easily to adopt this new model for design flow and simulation tools. Describes in detail a new industry standard for GaN-based power and RF circuit design; Includes discussion of practical problems and their solutions in GaN device modeling; Covers both radio-frequency (RF) and power electronics application of GaN technology; Describes modeling of both GaN RF and power devices.

Nanoelectronic Materials, Devices and Modeling

Author : Qiliang Li
Publisher : MDPI
ISBN 13 : 3039212257
Total Pages : 242 pages
Book Rating : 4.0/5 (392 download)

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Book Synopsis Nanoelectronic Materials, Devices and Modeling by : Qiliang Li

Download or read book Nanoelectronic Materials, Devices and Modeling written by Qiliang Li and published by MDPI. This book was released on 2019-07-15 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: As CMOS scaling is approaching the fundamental physical limits, a wide range of new nanoelectronic materials and devices have been proposed and explored to extend and/or replace the current electronic devices and circuits so as to maintain progress with respect to speed and integration density. The major limitations, including low carrier mobility, degraded subthreshold slope, and heat dissipation, have become more challenging to address as the size of silicon-based metal oxide semiconductor field effect transistors (MOSFETs) has decreased to nanometers, while device integration density has increased. This book aims to present technical approaches that address the need for new nanoelectronic materials and devices. The focus is on new concepts and knowledge in nanoscience and nanotechnology for applications in logic, memory, sensors, photonics, and renewable energy. This research on nanoelectronic materials and devices will be instructive in finding solutions to address the challenges of current electronics in switching speed, power consumption, and heat dissipation and will be of great interest to academic society and the industry.

GaAs Devices and Circuits

Author : Michael S. Shur
Publisher : Springer Science & Business Media
ISBN 13 : 1489919899
Total Pages : 677 pages
Book Rating : 4.4/5 (899 download)

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Book Synopsis GaAs Devices and Circuits by : Michael S. Shur

Download or read book GaAs Devices and Circuits written by Michael S. Shur and published by Springer Science & Business Media. This book was released on 2013-11-21 with total page 677 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.

High-Frequency GaN Electronic Devices

Author : Patrick Fay
Publisher : Springer
ISBN 13 : 3030202089
Total Pages : 308 pages
Book Rating : 4.0/5 (32 download)

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Book Synopsis High-Frequency GaN Electronic Devices by : Patrick Fay

Download or read book High-Frequency GaN Electronic Devices written by Patrick Fay and published by Springer. This book was released on 2019-08-01 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book brings together recent research by scientists and device engineers working on both aggressively-scaled conventional transistors as well as unconventional high-frequency device concepts in the III-N material system. Device concepts for mm-wave to THz operation based on deeply-scaled HEMTs, as well as distributed device designs based on plasma-wave propagation in polarization-induced 2DEG channels, tunneling, and hot-carrier injection are discussed in detail. In addition, advances in the underlying materials science that enable these demonstrations, and advancements in metrology that permit the accurate characterization and evaluation of these emerging device concepts are also included. Targeting readers looking to push the envelope in GaN-based electronics device research, this book provides a current, comprehensive treatment of device concepts and physical phenomenology suitable for applying GaN and related materials to emerging ultra-high-frequency applications. Offers readers an integrated treatment of the state of the art in both conventional (i.e., HEMT) scaling as well as unconventional device architectures suitable for amplification and signal generation in the mm-wave and THz regime using GaN-based devices, written by authors that are active and widely-known experts in the field; Discusses both conventional scaled HEMTs (into the deep mm-wave) as well as unconventional approaches to address the mm-wave and THz regimes; Provides “vertically integrated” coverage, including materials science that enables these recent advances, as well as device physics & design, and metrology techniques; Includes fundamental physics, as well as numerical simulations and experimental realizations.

Handbook for III-V High Electron Mobility Transistor Technologies

Author : D. Nirmal
Publisher : CRC Press
ISBN 13 : 0429862539
Total Pages : 443 pages
Book Rating : 4.4/5 (298 download)

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Book Synopsis Handbook for III-V High Electron Mobility Transistor Technologies by : D. Nirmal

Download or read book Handbook for III-V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 443 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

Handbook of Nitride Semiconductors and Devices, GaN-based Optical and Electronic Devices

Author : Hadis Morkoç
Publisher : John Wiley & Sons
ISBN 13 : 3527628452
Total Pages : 902 pages
Book Rating : 4.5/5 (276 download)

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Book Synopsis Handbook of Nitride Semiconductors and Devices, GaN-based Optical and Electronic Devices by : Hadis Morkoç

Download or read book Handbook of Nitride Semiconductors and Devices, GaN-based Optical and Electronic Devices written by Hadis Morkoç and published by John Wiley & Sons. This book was released on 2009-07-30 with total page 902 pages. Available in PDF, EPUB and Kindle. Book excerpt: The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 3 deals with nitride semiconductor devices and device technology. Among the application areas that feature prominently here are LEDs, lasers, FETs and HBTs, detectors and unique issues surrounding solar blind detection.

Power GaN Devices

Author : Matteo Meneghini
Publisher : Springer
ISBN 13 : 3319431994
Total Pages : 383 pages
Book Rating : 4.3/5 (194 download)

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Book Synopsis Power GaN Devices by : Matteo Meneghini

Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

Springer Handbook of Semiconductor Devices

Author : Massimo Rudan
Publisher : Springer Nature
ISBN 13 : 3030798275
Total Pages : 1680 pages
Book Rating : 4.0/5 (37 download)

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Book Synopsis Springer Handbook of Semiconductor Devices by : Massimo Rudan

Download or read book Springer Handbook of Semiconductor Devices written by Massimo Rudan and published by Springer Nature. This book was released on 2022-11-10 with total page 1680 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.

Information System Design: Communication Networks and IoT

Author : Vikrant Bhateja
Publisher : Springer Nature
ISBN 13 : 981974895X
Total Pages : 564 pages
Book Rating : 4.8/5 (197 download)

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Book Synopsis Information System Design: Communication Networks and IoT by : Vikrant Bhateja

Download or read book Information System Design: Communication Networks and IoT written by Vikrant Bhateja and published by Springer Nature. This book was released on with total page 564 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Analysis and Simulation of Heterostructure Devices

Author : Vassil Palankovski
Publisher : Springer Science & Business Media
ISBN 13 : 3709105609
Total Pages : 309 pages
Book Rating : 4.7/5 (91 download)

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Book Synopsis Analysis and Simulation of Heterostructure Devices by : Vassil Palankovski

Download or read book Analysis and Simulation of Heterostructure Devices written by Vassil Palankovski and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 309 pages. Available in PDF, EPUB and Kindle. Book excerpt: The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.

Design and Modeling of Mechanical Systems - V

Author : Lassaad Walha
Publisher : Springer Nature
ISBN 13 : 3031146158
Total Pages : 929 pages
Book Rating : 4.0/5 (311 download)

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Book Synopsis Design and Modeling of Mechanical Systems - V by : Lassaad Walha

Download or read book Design and Modeling of Mechanical Systems - V written by Lassaad Walha and published by Springer Nature. This book was released on 2022-08-19 with total page 929 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book offers a collection of original peer-reviewed contributions presented at the 9th International Congress on Design and Modeling of Mechanical Systems (CMSM’2021), held on December 20-22, 2021, in Hammamet, Tunisia. It reports on research findings, advanced methods and industrial applications relating to mechanical systems, materials and structures, and machining. It covers vibration analysis, CFD modeling and simulation, intelligent monitoring and control, including applications related to industry 4.0 and additive manufacturing. Continuing on the tradition of the previous editions, and with a good balance of theory and practice, the book offers a timely snapshot, and a useful resource for both researchers and professionals in the field of design and modeling of mechanical systems.

Advanced SPICE Model for GaN HEMTs (ASM-HEMT)

Author : Sourabh Khandelwal
Publisher : Springer Nature
ISBN 13 : 3030777308
Total Pages : 194 pages
Book Rating : 4.0/5 (37 download)

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Book Synopsis Advanced SPICE Model for GaN HEMTs (ASM-HEMT) by : Sourabh Khandelwal

Download or read book Advanced SPICE Model for GaN HEMTs (ASM-HEMT) written by Sourabh Khandelwal and published by Springer Nature. This book was released on 2022-01-01 with total page 194 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a new industry standard model for GaN-based power and RF circuit design. The author describes this new, standard model in detail, covering the different components of the ASM GaN model from fundamental derivations to the implementation in circuit simulation tools. The book also includes a detailed description of parameter extraction steps and model quality tests, which are critically important for effective use of this standard model in circuit simulation and product design. Coverage includes both radio-frequency (RF), and power electronics applications of this model. Practical issues related to measurement data and parameter extraction flow are also discussed, enabling readers easily to adopt this new model for design flow and simulation tools. Describes in detail a new industry standard for GaN-based power and RF circuit design; Includes discussion of practical problems and their solutions in GaN device modeling; Covers both radio-frequency (RF) and power electronics application of GaN technology; Describes modeling of both GaN RF and power devices.

Proceedings of the Scientific-Practical Conference "Research and Development - 2016"

Download Proceedings of the Scientific-Practical Conference

Author : K. V. Anisimov
Publisher : Springer
ISBN 13 : 3319628704
Total Pages : 715 pages
Book Rating : 4.3/5 (196 download)

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Book Synopsis Proceedings of the Scientific-Practical Conference "Research and Development - 2016" by : K. V. Anisimov

Download or read book Proceedings of the Scientific-Practical Conference "Research and Development - 2016" written by K. V. Anisimov and published by Springer. This book was released on 2017-12-04 with total page 715 pages. Available in PDF, EPUB and Kindle. Book excerpt: This open access book relates to the III Annual Conference hosted by The Ministry of Education and Science of the Russian Federation in December 2016. This event has summarized, analyzed and discussed the interim results, academic outputs and scientific achievements of the Russian Federal Targeted Programme “Research and Development in Priority Areas of Development of the Russian Scientific and Technological Complex for 2014–2020.” It contains 75 selected papers from 6 areas considered priority by the Federal Targeted Programme: computer science, ecology & environment sciences; energy and energy efficiency; lifesciences; nanoscience & nanotechnology and transport & communications. The chapters report the results of the 3-years research projects supported by the Programme and finalized in 2016.

HEMT Technology and Applications

Author : Trupti Ranjan Lenka
Publisher : Springer Nature
ISBN 13 : 9811921652
Total Pages : 246 pages
Book Rating : 4.8/5 (119 download)

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Book Synopsis HEMT Technology and Applications by : Trupti Ranjan Lenka

Download or read book HEMT Technology and Applications written by Trupti Ranjan Lenka and published by Springer Nature. This book was released on 2022-06-23 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers two broad domains: state-of-the-art research in GaN HEMT and Ga2O3 HEMT. Each technology covers materials system, band engineering, modeling and simulations, fabrication techniques, and emerging applications. The book presents basic operation principles of HEMT, types of HEMT structures, and semiconductor device physics to understand the device behavior. The book presents numerical modeling of the device and TCAD simulations for high-frequency and high-power applications. The chapters include device characteristics of HEMT including 2DEG density, Id-Vgs, Id-Vds, transconductance, linearity, and C-V. The book emphasizes the state-of-the-art fabrication techniques of HEMT and circuit design for various applications in low noise amplifier, oscillator, power electronics, and biosensor applications. The book focuses on HEMT applications to meet the ever-increasing demands of the industry, innovation in terms of materials, design, modeling, simulation, processes, and circuits. The book will be primarily helpful to undergraduate/postgraduate, researchers, and practitioners in their research.