Modeling And Characterization Of Amorphous Oxide Semiconductor Thin Film Transistors

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Modeling and Characterization of Amorphous Oxide Semiconductor Thin-film Transistors

Author : Bao-Sung Yeh
Publisher :
ISBN 13 :
Total Pages : 161 pages
Book Rating : 4.:/5 (95 download)

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Book Synopsis Modeling and Characterization of Amorphous Oxide Semiconductor Thin-film Transistors by : Bao-Sung Yeh

Download or read book Modeling and Characterization of Amorphous Oxide Semiconductor Thin-film Transistors written by Bao-Sung Yeh and published by . This book was released on 2015 with total page 161 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of the research presented herein is to elucidate the effect of traps in determining amorphous oxide semiconductor thin-film transistor (AOS TFT) performance using modeling and characterization. A novel method is proposed to extract the interface state distribution from a TFT transfer curve. Analysis of zinc-indium oxide (ZIO), zinc-tin oxide (ZTO), and indium-gallium-zinc oxide (IGZO) TFTs reveals an interface state distribution of ~1011- 1012 cm−2 eV−1 and that the interface state density is negligible compared to the density of free electrons in the accumulation layer beyond a surface potential of ~0.3 V. Technology computer-aided design (TCAD) simulation is employed in order to assess IGZO TFT non-ideal electrical characteristics involving different types of charge and/or traps. TCAD simulation reveals that negative charge placed at the backside (ungated) surface or frontside (gated) interface shifts a transfer curve to the right (left) because of depletion (accumulation) of the channel. A two-layer model attempts to address ultrathin channel layer trends. A new methodology for accomplishing capacitance-voltage (C-V) assessment of AOS channel layers is proposed. It is asserted that meaningful C-V analysis can only be accomplished using a quasi-static method and an insulating substrate. Properly conducted C-V measurements can be used to estimate the flat-band voltage, the effective donor density in an AOS channel layer, the channel layer surface potential, and the conduction band-tail state density and Urbach energy.

Amorphous Oxide Semiconductors

Author : Hideo Hosono
Publisher : John Wiley & Sons
ISBN 13 : 1119715652
Total Pages : 644 pages
Book Rating : 4.1/5 (197 download)

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Book Synopsis Amorphous Oxide Semiconductors by : Hideo Hosono

Download or read book Amorphous Oxide Semiconductors written by Hideo Hosono and published by John Wiley & Sons. This book was released on 2022-05-17 with total page 644 pages. Available in PDF, EPUB and Kindle. Book excerpt: AMORPHOUS OXIDE SEMICONDUCTORS A singular resource on amorphous oxide semiconductors edited by a world-recognized pioneer in the field In Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory, the Editors deliver a comprehensive account of the current status of—and latest developments in—transparent oxide semiconductor technology. With contributions from leading international researchers and exponents in the field, this edited volume covers physical fundamentals, thin-film transistor applications, processing, circuits and device simulation, display and memory applications, and new materials relevant to amorphous oxide semiconductors. The book makes extensive use of structural diagrams of materials, energy level and energy band diagrams, device structure illustrations, and graphs of device transfer characteristics, photographs and micrographs to help illustrate the concepts discussed within. It also includes: A thorough introduction to amorphous oxide semiconductors, including discussions of commercial demand, common challenges faced during their manufacture, and materials design Comprehensive explorations of the electronic structure of amorphous oxide semiconductors, structural randomness, doping limits, and defects Practical discussions of amorphous oxide semiconductor processing, including oxide materials and interfaces for application and solution-process metal oxide semiconductors for flexible electronics In-depth examinations of thin film transistors (TFTs), including the trade-off relationship between mobility and reliability in oxide TFTs Perfect for practicing scientists, engineers, and device technologists working with transparent semiconductor systems, Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory will also earn a place in the libraries of students studying oxides and other non-classical and innovative semiconductor devices. WILEY SID Series in Display Technology Series Editor: Ian Sage, Abelian Services, Malvern, UK The Society for Information Display (SID) is an international society which has the aim of encouraging the development of all aspects of the field of information display. Complementary to the aims of the society, the Wiley-SID series is intended to explain the latest developments in information display technology at a professional level. The broad scope of the series addresses all facets of information displays from technical aspects through systems and prototypes to standards and ergonomics.

Modeling and Characterization of Amorphous Silicon Thin Film Transistors

Author : Shantanu A. Bhalerao
Publisher :
ISBN 13 :
Total Pages : 120 pages
Book Rating : 4.:/5 (115 download)

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Book Synopsis Modeling and Characterization of Amorphous Silicon Thin Film Transistors by : Shantanu A. Bhalerao

Download or read book Modeling and Characterization of Amorphous Silicon Thin Film Transistors written by Shantanu A. Bhalerao and published by . This book was released on 2008 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Device and Material Characterization and Analytic Modeling of Amorphous Silicon Thin Film Transistors

Author : Holly C. Slade
Publisher :
ISBN 13 :
Total Pages : 466 pages
Book Rating : 4.:/5 (468 download)

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Book Synopsis Device and Material Characterization and Analytic Modeling of Amorphous Silicon Thin Film Transistors by : Holly C. Slade

Download or read book Device and Material Characterization and Analytic Modeling of Amorphous Silicon Thin Film Transistors written by Holly C. Slade and published by . This book was released on 1997 with total page 466 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Fabrication, Characterization, and Modeling of Organic Thin Film Transistors

Author : John Charles McKeen
Publisher :
ISBN 13 :
Total Pages : 142 pages
Book Rating : 4.:/5 (626 download)

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Book Synopsis Fabrication, Characterization, and Modeling of Organic Thin Film Transistors by : John Charles McKeen

Download or read book Fabrication, Characterization, and Modeling of Organic Thin Film Transistors written by John Charles McKeen and published by . This book was released on 2004 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Characterization and Modeling of Short Channel Polysilicon Thin Film Transistors

Author : Mark D. Jacunski
Publisher :
ISBN 13 :
Total Pages : 366 pages
Book Rating : 4.:/5 (441 download)

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Book Synopsis Characterization and Modeling of Short Channel Polysilicon Thin Film Transistors by : Mark D. Jacunski

Download or read book Characterization and Modeling of Short Channel Polysilicon Thin Film Transistors written by Mark D. Jacunski and published by . This book was released on 1997 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt:

A Second-Order ΣΔ ADC Using Sputtered IGZO TFTs

Author : Ana Paula Pinto Correia
Publisher : Springer
ISBN 13 : 331927192X
Total Pages : 86 pages
Book Rating : 4.3/5 (192 download)

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Book Synopsis A Second-Order ΣΔ ADC Using Sputtered IGZO TFTs by : Ana Paula Pinto Correia

Download or read book A Second-Order ΣΔ ADC Using Sputtered IGZO TFTs written by Ana Paula Pinto Correia and published by Springer. This book was released on 2015-12-29 with total page 86 pages. Available in PDF, EPUB and Kindle. Book excerpt: This books discusses the design, electrical simulation and layout of a 2nd-order ∑∆ analog-to-digital converter (ADC), using oxide thin-film transistors (TFTs) technology. The authors provide a unified view of materials science and electronics engineering, in order to guide readers from both fields through key topics. To accomplish this goal, background regarding materials, device physics, characterization techniques, circuit design and layout is given together with a detailed discussion of experimental data. The final simulation results clearly demonstrate the potential of the proposed circuit-level techniques, which enables the implementation of robust and energy efficient ADCs based on oxide TFTs, for moderate resolutions and conversion-rates.

Short-Channel Organic Thin-Film Transistors

Author : Tarek Zaki
Publisher : Springer
ISBN 13 : 3319188968
Total Pages : 232 pages
Book Rating : 4.3/5 (191 download)

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Book Synopsis Short-Channel Organic Thin-Film Transistors by : Tarek Zaki

Download or read book Short-Channel Organic Thin-Film Transistors written by Tarek Zaki and published by Springer. This book was released on 2015-05-27 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work takes advantage of high-resolution silicon stencil masks to build air-stable complementary OTFTs using a low-temperature fabrication process. Plastic electronics based on organic thin-film transistors (OTFTs) pave the way for cheap, flexible and large-area products. Over the past few years, OTFTs have undergone remarkable advances in terms of reliability, performance and scale of integration. Many factors contribute to the allure of this technology; the masks exhibit excellent stiffness and stability, thus allowing OTFTs with submicrometer channel lengths and superb device uniformity to be patterned. Furthermore, the OTFTs employ an ultra-thin gate dielectric that provides a sufficiently high capacitance to enable the transistors to operate at voltages as low as 3 V. The critical challenges in this development are the subtle mechanisms that govern the properties of aggressively scaled OTFTs. These mechanisms, dictated by device physics, are well described and implemented into circuit-design tools to ensure adequate simulation accuracy.

Physics and Modeling of Oxide Semiconductor Thin Film Transistors

Author : S. Lee
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (894 download)

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Book Synopsis Physics and Modeling of Oxide Semiconductor Thin Film Transistors by : S. Lee

Download or read book Physics and Modeling of Oxide Semiconductor Thin Film Transistors written by S. Lee and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Amorphous Silicon Thin-Film Transistors

Author : Zoubeida Hafdi
Publisher : Springer Nature
ISBN 13 : 3031247930
Total Pages : 141 pages
Book Rating : 4.0/5 (312 download)

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Book Synopsis Amorphous Silicon Thin-Film Transistors by : Zoubeida Hafdi

Download or read book Amorphous Silicon Thin-Film Transistors written by Zoubeida Hafdi and published by Springer Nature. This book was released on 2023-03-03 with total page 141 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explains the basic elements that readers need to know about amorphous silicon material and a-Si:H TFTs. It includes the main principles of the transistors operation, modeling and applications. Fundamentals about transport mechanisms in a-Si:H TFTs and the associated electronic properties are introduced and extended to design examples and strategies to build reliable, large-area, performance optimized circuits. The book also reviews the effect of the amorphous silicon nature and how it impacts the transistors properties and their relevant applications. Fundamentals are made as simple as possible to be easily grasped as they cover everything expected to be important for an easy understanding of the introduced concepts. The author’s approach is geared toward undergraduate and graduate students, but the content is also appropriate for circuit simulator developers, integrated circuit designers and manufacturers, as well as everyone engaged in work on large area integrated circuit technologies and photovoltaics.

Introduction to Thin Film Transistors

Author : S.D. Brotherton
Publisher : Springer Science & Business Media
ISBN 13 : 3319000020
Total Pages : 467 pages
Book Rating : 4.3/5 (19 download)

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Book Synopsis Introduction to Thin Film Transistors by : S.D. Brotherton

Download or read book Introduction to Thin Film Transistors written by S.D. Brotherton and published by Springer Science & Business Media. This book was released on 2013-04-16 with total page 467 pages. Available in PDF, EPUB and Kindle. Book excerpt: Introduction to Thin Film Transistors reviews the operation, application and technology of the main classes of thin film transistor (TFT) of current interest for large area electronics. The TFT materials covered include hydrogenated amorphous silicon (a-Si:H), poly-crystalline silicon (poly-Si), transparent amorphous oxide semiconductors (AOS), and organic semiconductors. The large scale manufacturing of a-Si:H TFTs forms the basis of the active matrix flat panel display industry. Poly-Si TFTs facilitate the integration of electronic circuits into portable active matrix liquid crystal displays, and are increasingly used in active matrix organic light emitting diode (AMOLED) displays for smart phones. The recently developed AOS TFTs are seen as an alternative option to poly-Si and a-Si:H for AMOLED TV and large AMLCD TV applications, respectively. The organic TFTs are regarded as a cost effective route into flexible electronics. As well as treating the highly divergent preparation and properties of these materials, the physics of the devices fabricated from them is also covered, with emphasis on performance features such as carrier mobility limitations, leakage currents and instability mechanisms. The thin film transistors implemented with these materials are the conventional, insulated gate field effect transistors, and a further chapter describes a new thin film transistor structure: the source gated transistor, SGT. The driving force behind much of the development of TFTs has been their application to AMLCDs, and there is a chapter dealing with the operation of these displays, as well as of AMOLED and electrophoretic displays. A discussion of TFT and pixel layout issues is also included. For students and new-comers to the field, introductory chapters deal with basic semiconductor surface physics, and with classical MOSFET operation. These topics are handled analytically, so that the underlying device physics is clearly revealed. These treatments are then used as a reference point, from which the impact of additional band-gap states on TFT behaviour can be readily appreciated. This reference book, covering all the major TFT technologies, will be of interest to a wide range of scientists and engineers in the large area electronics industry. It will also be a broad introduction for research students and other scientists entering the field, as well as providing an accessible and comprehensive overview for undergraduate and postgraduate teaching programmes.

Evaluation of Amorphous Oxide Semiconductors for Thin Film Transistors (TFTs) and Resistive Random Access Memory (RRAM) Applications

Author : Jaana Saranya Rajachidambaram
Publisher :
ISBN 13 :
Total Pages : 128 pages
Book Rating : 4.:/5 (772 download)

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Book Synopsis Evaluation of Amorphous Oxide Semiconductors for Thin Film Transistors (TFTs) and Resistive Random Access Memory (RRAM) Applications by : Jaana Saranya Rajachidambaram

Download or read book Evaluation of Amorphous Oxide Semiconductors for Thin Film Transistors (TFTs) and Resistive Random Access Memory (RRAM) Applications written by Jaana Saranya Rajachidambaram and published by . This book was released on 2012 with total page 128 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin-film transistors (TFTs) are primarily used as a switching element in liquid crystal displays. Currently, amorphous silicon is the dominant TFT technology for displays, but higher performance TFTs will become necessary to enable ultra-definition resolution high-frequency large-area displays. Amorphous zinc tin oxide (ZTO) TFTs were fabricated by RF magnetron sputter deposition. In this study, the effect of both deposition and post annealing conditions have been evaluated in regards to film structure, composition, surface contamination, and device performance. Both the variation of oxygen partial pressure during deposition and the temperature of the post-deposition annealing were found to have a significant impact on TFT properties. X-ray diffraction data indicated that the ZTO films remain amorphous even after annealing to 600° C. Rutherford backscattering spectrometry indicated that the Zn:Sn ratio of the films was ~1.7:1 which is slightly tin rich compared to the sputter target composition. X-ray photoelectron spectroscopy data indicated that the films had significant surface contamination and that the Zn:Sn ratios changed depending on sample annealing conditions. Electrical characterization of ZTO films using TFT test structures indicated that mobilities as high as 17 cm2 V−1 s−1 could be obtained for depletion mode devices. It was determined that the electrical properties of ZTO films can be precisely controlled by varying the deposition conditions and annealing temperature. It was found that the ZTO electrical properties could be controlled where insulating, semiconducting and conducting films could be prepared. This precise control of electrical properties allowed us to incorporate sputter deposited ZTO films into resistive random access memory (RRAM) devices. RRAM are two terminal nonvolatile data memory devices that are very promising for the replacement of silicon-based Flash. These devices exhibited resistive switching between high-resistance states to low-resistance states and low-resistance states to high-resistance states depending on polarity of applied voltages and current compliance settings. The device switching was fundamentally related to the defect states and material properties of metal and insulator layers, and their interfaces in the metalinsulator-metal (MIM) structure.

Amorphous Oxide Semiconductors

Author : Hideo Hosono
Publisher : John Wiley & Sons
ISBN 13 : 1119715571
Total Pages : 644 pages
Book Rating : 4.1/5 (197 download)

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Book Synopsis Amorphous Oxide Semiconductors by : Hideo Hosono

Download or read book Amorphous Oxide Semiconductors written by Hideo Hosono and published by John Wiley & Sons. This book was released on 2022-05-31 with total page 644 pages. Available in PDF, EPUB and Kindle. Book excerpt: AMORPHOUS OXIDE SEMICONDUCTORS A singular resource on amorphous oxide semiconductors edited by a world-recognized pioneer in the field In Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory, the Editors deliver a comprehensive account of the current status of—and latest developments in—transparent oxide semiconductor technology. With contributions from leading international researchers and exponents in the field, this edited volume covers physical fundamentals, thin-film transistor applications, processing, circuits and device simulation, display and memory applications, and new materials relevant to amorphous oxide semiconductors. The book makes extensive use of structural diagrams of materials, energy level and energy band diagrams, device structure illustrations, and graphs of device transfer characteristics, photographs and micrographs to help illustrate the concepts discussed within. It also includes: A thorough introduction to amorphous oxide semiconductors, including discussions of commercial demand, common challenges faced during their manufacture, and materials design Comprehensive explorations of the electronic structure of amorphous oxide semiconductors, structural randomness, doping limits, and defects Practical discussions of amorphous oxide semiconductor processing, including oxide materials and interfaces for application and solution-process metal oxide semiconductors for flexible electronics In-depth examinations of thin film transistors (TFTs), including the trade-off relationship between mobility and reliability in oxide TFTs Perfect for practicing scientists, engineers, and device technologists working with transparent semiconductor systems, Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory will also earn a place in the libraries of students studying oxides and other non-classical and innovative semiconductor devices. WILEY SID Series in Display Technology Series Editor: Ian Sage, Abelian Services, Malvern, UK The Society for Information Display (SID) is an international society which has the aim of encouraging the development of all aspects of the field of information display. Complementary to the aims of the society, the Wiley-SID series is intended to explain the latest developments in information display technology at a professional level. The broad scope of the series addresses all facets of information displays from technical aspects through systems and prototypes to standards and ergonomics.

Advanced Processes and Characterization of Amorphous Silicon Thin Film Transistors

Author : Tong Li
Publisher :
ISBN 13 :
Total Pages : 320 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Advanced Processes and Characterization of Amorphous Silicon Thin Film Transistors by : Tong Li

Download or read book Advanced Processes and Characterization of Amorphous Silicon Thin Film Transistors written by Tong Li and published by . This book was released on 2000 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Importance of Simulation Studies in Analysis of Thin Film Transistors Based on Organic and Metal Oxide Semiconductors

Author : Dipti Gupta
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (115 download)

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Book Synopsis Importance of Simulation Studies in Analysis of Thin Film Transistors Based on Organic and Metal Oxide Semiconductors by : Dipti Gupta

Download or read book Importance of Simulation Studies in Analysis of Thin Film Transistors Based on Organic and Metal Oxide Semiconductors written by Dipti Gupta and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Importance of Simulation Studies in Analysis of Thin Film Transistors Based on Organic and Metal Oxide Semiconductors.

Characterization and Compact Modeling of Complementary Metal-oxide-semiconductor Transistors for Flexible Electronics

Author : Nicoleta Wacker
Publisher :
ISBN 13 : 9783862474196
Total Pages : 186 pages
Book Rating : 4.4/5 (741 download)

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Book Synopsis Characterization and Compact Modeling of Complementary Metal-oxide-semiconductor Transistors for Flexible Electronics by : Nicoleta Wacker

Download or read book Characterization and Compact Modeling of Complementary Metal-oxide-semiconductor Transistors for Flexible Electronics written by Nicoleta Wacker and published by . This book was released on 2013 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Outlook and Challenges of Nano Devices, Sensors, and MEMS

Author : Ting Li
Publisher : Springer
ISBN 13 : 3319508245
Total Pages : 522 pages
Book Rating : 4.3/5 (195 download)

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Book Synopsis Outlook and Challenges of Nano Devices, Sensors, and MEMS by : Ting Li

Download or read book Outlook and Challenges of Nano Devices, Sensors, and MEMS written by Ting Li and published by Springer. This book was released on 2017-02-22 with total page 522 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides readers with an overview of the design, fabrication, simulation, and reliability of nanoscale semiconductor devices, MEMS, and sensors, as they serve for realizing the next-generation internet of things. The authors focus on how the nanoscale structures interact with the electrical and/or optical performance, how to find optimal solutions to achieve the best outcome, how these apparatus can be designed via models and simulations, how to improve reliability, and what are the possible challenges and roadblocks moving forward.