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Mocvd Growth Of Gan Aln And Algan For Uv Photodetector Applications
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Book Synopsis MOCVD Growth of GAN, AlN and AlGaN for UV Photodetector Applications by :
Download or read book MOCVD Growth of GAN, AlN and AlGaN for UV Photodetector Applications written by and published by . This book was released on 1993 with total page 108 pages. Available in PDF, EPUB and Kindle. Book excerpt: For the growth of III-V nitrides, three main problems hinder the production of device quality materials. They are large lattice mismatch between nitride films and substrates, high n-type background concentration and difficulty in p-type doping. In the past year, we focused on the first problem, the lattice mismatch. Different substrates and different orientations of the substrates have been used in order to find a suitable substrate for the nitride growth. An atmospheric horizontal-type metalorganic chemical vapor deposition (MOCVD) reactor was used for the growth of aluminum nitride gallium nitride and ternary AlGa(1-x)N.
Book Synopsis הבעה בעל-פה לרמה ג' בקבוצות ההקבצה by :
Download or read book הבעה בעל-פה לרמה ג' בקבוצות ההקבצה written by and published by . This book was released on 1968 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Metalorganic Chemical Vapor Deposition of GaN, AlN and GaAlN for UV Photodetector Applications by :
Download or read book Metalorganic Chemical Vapor Deposition of GaN, AlN and GaAlN for UV Photodetector Applications written by and published by . This book was released on 1995 with total page 59 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN, AlN and GaAlN epilayers were grown by low-pressure metalorganic chemical vapor deposition, on sapphire, silicon, and 6H-SiC. The X-ray diffraction linewidths were as low as 30 and 100 arcsecs for GaN and AlN respectively on sapphire. Sharp optical absorption edges were obtained for these films. Transmission electron microscopy characterized the films microstructurally. Photoluminescence (PL) at 300 and 77 K yielded linewidths of about 80 and 40 meV respectively for GaN on all substrates. However, no deep-level-associated yellow emission was detected from the GaN on SiC. Unintentionally n-type doped GaN had an electron mobility as high as 200 sq cm/Vs at 300 K. As-grown semi-insulating CaN was also achieved. Ge doped GaN n-type (n up to 10(exp 20)/cu cm). P-type doping was conducted with Mg, resulting in semi-insulating layers. No yellow emission was detected from doped films. Ternary Ga(1-x)Al(x)N was grown for 0
Book Synopsis Optoelectronic Devices by : M Razeghi
Download or read book Optoelectronic Devices written by M Razeghi and published by Elsevier. This book was released on 2004 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
Download or read book Photodiodes written by Jeong Woo Park and published by BoD – Books on Demand. This book was released on 2011-07-29 with total page 460 pages. Available in PDF, EPUB and Kindle. Book excerpt: Photodiodes or photodetectors are in one boat with our human race. Efforts of people in related fields are contained in this book. This book would be valuable to those who want to obtain knowledge and inspiration in the related area.
Book Synopsis III-Nitride Ultraviolet Emitters by : Michael Kneissl
Download or read book III-Nitride Ultraviolet Emitters written by Michael Kneissl and published by Springer. This book was released on 2015-11-12 with total page 454 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive overview of the state-of-the-art in group III-nitride based ultraviolet LED and laser technologies, covering different substrate approaches, a review of optical, electronic and structural properties of InAlGaN materials as well as various optoelectronic components. In addition, the book gives an overview of a number of key application areas for UV emitters and detectors, including water purification, phototherapy, sensing, and UV curing. The book is written for researchers and graduate level students in the area of semiconductor materials, optoelectronics and devices as well as developers and engineers in the various application fields of UV emitters and detectors.
Book Synopsis GaN and Related Materials by : Stephen J. Pearton
Download or read book GaN and Related Materials written by Stephen J. Pearton and published by CRC Press. This book was released on 2021-10-08 with total page 556 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents views on current developments in heat and mass transfer research related to the modern development of heat exchangers. Devotes special attention to the different modes of heat and mass transfer mechanisms in relation to the new development of heat exchangers design. Dedicates particular attention to the future needs and demands for further development in heat and mass transfer. GaN and related materials are attracting tremendous interest for their applications to high-density optical data storage, blue/green diode lasers and LEDs, high-temperature electronics for high-power microwave applications, electronics for aerospace and automobiles, and stable passivation films for semiconductors. In addition, there is great scientific interest in the nitrides, because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. This series provides a forum for the latest research in this rapidly-changing field, offering readers a basic understanding of new developments in recent research. Series volumes feature a balance between original theoretical and experimental research in basic physics, device physics, novel materials and quantum structures, processing, and systems.
Book Synopsis III-Nitride Semiconductor Optoelectronics by :
Download or read book III-Nitride Semiconductor Optoelectronics written by and published by Academic Press. This book was released on 2017-01-05 with total page 490 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-Nitride Semiconductor Optoelectronics covers the latest breakthrough research and exciting developments in the field of III-nitride compound semiconductors. It includes important topics on the fundamentals of materials growth, characterization, and optoelectronic device applications of III-nitrides. Bulk, quantum well, quantum dot, and nanowire heterostructures are all thoroughly explored. Contains the latest breakthrough research in III-nitride optoelectronics Provides a comprehensive presentation that covers the fundamentals of materials growth and characterization and the design and performance characterization of state-of-the-art optoelectronic devices Presents an in-depth discussion on III-nitride bulk, quantum well, quantum dot, and nanowire technologies
Book Synopsis The Handbook of Photonics by : Mool C. Gupta
Download or read book The Handbook of Photonics written by Mool C. Gupta and published by CRC Press. This book was released on 2018-10-03 with total page 1040 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reflecting changes in the field in the ten years since the publication of the first edition, The Handbook of Photonics, Second Edition explores recent advances that have affected this technology. In this new, updated second edition editor Mool Gupta is joined by John Ballato, strengthening the handbook with their combined knowledge and the continued contributions of world-class researchers. New in the Second Edition: Information on optical fiber technology and the economic impact of photonics Coverage of emerging technologies in nanotechnology Sections on optical amplifiers, and polymeric optical materials The book covers photonics materials, devices, and systems, respectively. An introductory chapter, new to this edition, provides an overview of photonics technology, innovation, and economic development. Resting firmly on the foundation set by the first edition, this new edition continues to serve as a source for introductory material and a collection of published data for research and training in this field, making it the reference of first resort.
Book Synopsis III-Nitride Semiconductors by : M.O. Manasreh
Download or read book III-Nitride Semiconductors written by M.O. Manasreh and published by Elsevier. This book was released on 2000-12-06 with total page 463 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.
Book Synopsis Molecular Beam Epitaxy Growth and Characterization of GaN, AlN, and AlGaN/GaN Heterostructures by : Stefan Davidsson
Download or read book Molecular Beam Epitaxy Growth and Characterization of GaN, AlN, and AlGaN/GaN Heterostructures written by Stefan Davidsson and published by . This book was released on 2005 with total page 97 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Wide Energy Bandgap Electronic Devices by : Fan Ren
Download or read book Wide Energy Bandgap Electronic Devices written by Fan Ren and published by World Scientific. This book was released on 2003 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents state-of-the-art GaN and SiC electronic devices, as well as detailed applications of these devices to power conditioning, r. f. base station infrastructure and high temperature electronics.
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2002 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Light-Emitting Diodes by : Jinmin Li
Download or read book Light-Emitting Diodes written by Jinmin Li and published by Springer. This book was released on 2019-01-07 with total page 601 pages. Available in PDF, EPUB and Kindle. Book excerpt: Comprehensive in scope, this book covers the latest progresses of theories, technologies and applications of LEDs based on III-V semiconductor materials, such as basic material physics, key device issues (homoepitaxy and heteroepitaxy of the materials on different substrates, quantum efficiency and novel structures, and more), packaging, and system integration. The authors describe the latest developments of LEDs with spectra coverage from ultra-violet (UV) to the entire visible light wavelength. The major aspects of LEDs, such as material growth, chip structure, packaging, and reliability are covered, as well as emerging and novel applications beyond the general and conventional lightings. This book, written by leading authorities in the field, is indispensable reading for researchers and students working with semiconductors, optoelectronics, and optics. Addresses novel LED applications such as LEDs for healthcare and wellbeing, horticulture, and animal breeding; Editor and chapter authors are global leading experts from the scientific and industry communities, and their latest research findings and achievements are included; Foreword by Hiroshi Amano, one of the 2014 winners of the Nobel Prize in Physics for his work on light-emitting diodes.
Book Synopsis The Physics of Semiconductor Devices by : R. K. Sharma
Download or read book The Physics of Semiconductor Devices written by R. K. Sharma and published by Springer. This book was released on 2019-01-31 with total page 1299 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same scientific community. The book discusses the latest developments in the field of III-nitrides; materials & devices, compound semiconductors, VLSI technology, optoelectronics, sensors, photovoltaics, crystal growth, epitaxy and characterization, graphene and other 2D materials and organic semiconductors.
Book Synopsis III-Nitride Based Light Emitting Diodes and Applications by : Tae-Yeon Seong
Download or read book III-Nitride Based Light Emitting Diodes and Applications written by Tae-Yeon Seong and published by Springer Science & Business Media. This book was released on 2014-07-08 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: Light emitting diodes (LEDs) are already used in traffic signals, signage lighting, and automotive applications. However, its ultimate goal is to replace traditional illumination through LED lamps since LED lighting significantly reduces energy consumption and cuts down on carbon-dioxide emission. Despite dramatic advances in LED technologies (e.g., growth, doping and processing technologies), however, there remain critical issues for further improvements yet to be achieved for the realization of solid-state lighting. This book aims to provide the readers with some contemporary LED issues, which have not been comprehensively discussed in the published books and, on which the performance of LEDs is seriously dependent. For example, most importantly, there must be a breakthrough in the growth of high-quality nitride semiconductor epitaxial layers with a low density of dislocations, in particular, in the growth of Al-rich and and In-rich GaN-based semiconductors. The materials quality is directly dependent on the substrates used, such as sapphire, Si, etc. In addition, efficiency droop, growth on different orientations and polarization are also important. Chip processing and packaging technologies are key issues. This book presents a comprehensive review of contemporary LED issues. Given the interest and importance of future research in nitride semiconducting materials and solid state lighting applications, the contents are very timely. The book is composed of chapters written by leading researchers in III-nitride semiconducting materials and device technology. This book will be of interest to scientists and engineers working on LEDs for lighting applications. Postgraduate researchers working on LEDs will also benefit from the issues this book provides.
Book Synopsis III-nitride Devices and Nanoengineering by : Zhe Chuan Feng
Download or read book III-nitride Devices and Nanoengineering written by Zhe Chuan Feng and published by World Scientific. This book was released on 2008 with total page 477 pages. Available in PDF, EPUB and Kindle. Book excerpt: Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field.
