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Microscopic Identification Of Electronic Defects In Semiconductors
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Book Synopsis Materials Research Society Symposia Proceedings. Volume 46. Microscopic Identification of Electronic Defects in Semiconductors Held at San Francisco, California on 15-18 April 1985 by : Noble M. Johnson
Download or read book Materials Research Society Symposia Proceedings. Volume 46. Microscopic Identification of Electronic Defects in Semiconductors Held at San Francisco, California on 15-18 April 1985 written by Noble M. Johnson and published by . This book was released on 1985 with total page 621 pages. Available in PDF, EPUB and Kindle. Book excerpt: Partial Contents: Defect Structure and Properties by Junction Spectroscopy; Microscopic Identification of Defects in Semiconductors by Electron-Spin-Resonance and Related Techniques; Identification of Impurities and Defects in Semiconductors by Optical Spectroscopy; Electronic Defect Characterization; The Role of Theory in Defect Physics; Physics of Deep Levels; Thermodynamics of Deep Levels in Semiconductors; El2 and Related Defects in GaAs--Challenges and Pitfalls ; the IDentification of Lattice Defects in GaAs and AlGaAs Microscopic Identification of Anion Antisite Defects in GaAs by Optically Detected Magnetic Resonance; Defect Identification in Silicon Using Electron Nuclear Double Resonance; Defect Aggregates in Silicon; Electron Paramagnetic Resonance of Intrinsic Defects in III-V Semiconductors; Characterization of Semiconductors and Semiconducting Superlattices using High-Resolution Photolumienscence Spectroscopy; Role of Electron Microscopy in Semiconductor Electronic Defect Analysis; Local Vibrational Mode Spectroscopy of Impurities in Semiconductors; Defect Indentification in High-Purity Semiconductors; and Microscopic Identification of Optical Defects in Silicon by Photoluminescence.
Book Synopsis Microscopic Identification of Electronic Defects in Semiconductors by : Noble M. Johnson
Download or read book Microscopic Identification of Electronic Defects in Semiconductors written by Noble M. Johnson and published by . This book was released on 1985 with total page 630 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Defects in Semiconductors written by and published by Academic Press. This book was released on 2015-06-08 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. Expert contributors Reviews of the most important recent literature Clear illustrations A broad view, including examination of defects in different semiconductors
Book Synopsis Point Defects in Semiconductors and Insulators by : Johann-Martin Spaeth
Download or read book Point Defects in Semiconductors and Insulators written by Johann-Martin Spaeth and published by Springer. This book was released on 2012-10-15 with total page 492 pages. Available in PDF, EPUB and Kindle. Book excerpt: The precedent book with the title "Structural Analysis of Point Defects in Solids: An introduction to multiple magnetic resonance spectroscopy" ap peared about 10 years ago. Since then a very active development has oc curred both with respect to the experimental methods and the theoretical interpretation of the experimental results. It would therefore not have been sufficient to simply publish a second edition of the precedent book with cor rections and a few additions. Furthermore the application of the multiple magnetic resonance methods has more and more shifted towards materials science and represents one of the important methods of materials analysis. Multiple magnetic resonances are used less now for "fundamental" studies in solid state physics. Therefore a more "pedestrian" access to the meth ods is called for to help the materials scientist to use them or to appreciate results obtained by using these methods. We have kept the two introduc tory chapters on conventional electron paramagnetic resonance (EPR) of the precedent book which are the base for the multiple resonance methods. The chapter on optical detection of EPR (ODEPR) was supplemented by sections on the structural information one can get from "forbidden" transitions as well as on spatial correlations between defects in the so-called "cross relaxation spectroscopy". High-field ODEPR/ENDOR was also added. The chapter on stationary electron nuclear double resonance (ENDOR) was supplemented by the method of stochastic END OR developed a few years ago in Paderborn which is now also commercially available.
Book Synopsis Point Defects in Semiconductors: Microscopic Identification, Metastable Properties, Defect Migration, and Diffusion by : James A. Van Vechten
Download or read book Point Defects in Semiconductors: Microscopic Identification, Metastable Properties, Defect Migration, and Diffusion written by James A. Van Vechten and published by . This book was released on 1988 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamental progress is made in the identification of point defect complexes in semiconductors (particularly EL2 and ELO in GaAs), the elucidation of the mechanisms by which they migrate (particularly re vacancy nearest neighbor hopping in compound semiconductors and recombination enhanced migration of vacancies in Si), and the development of an efficient means to simulate their detailed, and very complicated, diffusion and inter-reaction on a microcomputer using an innovative (and evidently unique) Monte Carlo method. Some effort has also recently gone into the elucidation of the temperature dependence of band off sets at heterojunctions, particularly GaAs-AlAs and HgTe-CdTe. Keywords: Cadmium telluride; Mercury telluride; Gallium arsenide; Aluminum arsenide. (JHD).
Author :Johann-Martin Spaeth Publisher :Springer Science & Business Media ISBN 13 :9783540426950 Total Pages :508 pages Book Rating :4.4/5 (269 download)
Book Synopsis Point Defects in Semiconductors and Insulators by : Johann-Martin Spaeth
Download or read book Point Defects in Semiconductors and Insulators written by Johann-Martin Spaeth and published by Springer Science & Business Media. This book was released on 2003-01-22 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt: The precedent book with the title "Structural Analysis of Point Defects in Solids: An introduction to multiple magnetic resonance spectroscopy" ap peared about 10 years ago. Since then a very active development has oc curred both with respect to the experimental methods and the theoretical interpretation of the experimental results. It would therefore not have been sufficient to simply publish a second edition of the precedent book with cor rections and a few additions. Furthermore the application of the multiple magnetic resonance methods has more and more shifted towards materials science and represents one of the important methods of materials analysis. Multiple magnetic resonances are used less now for "fundamental" studies in solid state physics. Therefore a more "pedestrian" access to the meth ods is called for to help the materials scientist to use them or to appreciate results obtained by using these methods. We have kept the two introduc tory chapters on conventional electron paramagnetic resonance (EPR) of the precedent book which are the base for the multiple resonance methods. The chapter on optical detection of EPR (ODEPR) was supplemented by sections on the structural information one can get from "forbidden" transitions as well as on spatial correlations between defects in the so-called "cross relaxation spectroscopy". High-field ODEPR/ENDOR was also added. The chapter on stationary electron nuclear double resonance (ENDOR) was supplemented by the method of stochastic END OR developed a few years ago in Paderborn which is now also commercially available.
Download or read book Energy Research Abstracts written by and published by . This book was released on 1988 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Characterisation and Control of Defects in Semiconductors by : Filip Tuomisto
Download or read book Characterisation and Control of Defects in Semiconductors written by Filip Tuomisto and published by Materials, Circuits and Device. This book was released on 2019-10-27 with total page 601 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides an up-to-date review of the experimental and theoretical methods used for studying defects in semiconductors, this book focuses on recent developments driven by the requirements of new materials, including nitrides, oxide semiconductors and 2-D semiconductors.
Book Synopsis Extended Defects in Semiconductors by : D. B. Holt
Download or read book Extended Defects in Semiconductors written by D. B. Holt and published by Cambridge University Press. This book was released on 2007-04-12 with total page 625 pages. Available in PDF, EPUB and Kindle. Book excerpt: A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Book Synopsis Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon by : Peter Pichler
Download or read book Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon written by Peter Pichler and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Book Synopsis Physics Of Semiconductors, The - Proceedings Of The Xxi International Conference (In 2 Volumes) by : Ping Jiang
Download or read book Physics Of Semiconductors, The - Proceedings Of The Xxi International Conference (In 2 Volumes) written by Ping Jiang and published by World Scientific. This book was released on 1993-03-31 with total page 2151 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 21st conference proceedings continue the tradition of the ICPS series. The proceedings cover all aspects of semiconductor physics, including those related to materials, processing and devices. Plenary and invited speakers address areas of major interest.
Download or read book NASA Technical Memorandum written by and published by . This book was released on 1987 with total page 776 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Optical Absorption of Impurities and Defects in Semiconducting Crystals by : Bernard Pajot
Download or read book Optical Absorption of Impurities and Defects in Semiconducting Crystals written by Bernard Pajot and published by Springer Science & Business Media. This book was released on 2010-05-26 with total page 487 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconducting and Insulating Crystals details how absorption spectroscopy provides information on the nature, concentration, charge state and configuration of impurities in crystals and also on their kinetics and transformations under annealing. After an introduction of the bulk optical properties of semiconductors and insulators and of impurities in crystals, this book presents the physical bases necessary for the understanding of impurity spectra. The description of various set-ups and accessories used in absorption spectroscopy is followed by a presentation of experimental results on specific impurities and classes of impurities and their relation with those obtained by various computation and by other experimental techniques.
Book Synopsis Microgravity Science and Applications Program Tasks by :
Download or read book Microgravity Science and Applications Program Tasks written by and published by . This book was released on 1987 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Characterization in Compound Semiconductor Processing by : Yale Strausser
Download or read book Characterization in Compound Semiconductor Processing written by Yale Strausser and published by Momentum Press. This book was released on 2010 with total page 217 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Characterization in Compound Semiconductor Processing is for scientists and engineers working with compound semiconductor materials and devices who are not characterization specialists. Materials and processes typically used in R&D and in the fabrication of GaAs, GaA1As, InP and HgCdTe based devices provide examples of common analytical problems. The book discusses a variety of characterization techniques to provide insight into how each individually, or in combination, might be used in solving problems associated with these materials. The book will help in the selection and application of the appropriate analytical techniques by its coverage of all stages of materials or device processing: substrate preparation, epitaxial growth, dielectric film deposition, contact formation and dopant introduction."--P. [4] of cover.
Book Synopsis Microscopy of Semiconducting Materials 2003 by : A.G. Cullis
Download or read book Microscopy of Semiconducting Materials 2003 written by A.G. Cullis and published by CRC Press. This book was released on 2018-01-10 with total page 1135 pages. Available in PDF, EPUB and Kindle. Book excerpt: Modern electronic devices rely on ever-greater miniaturization of components, and semiconductor processing is approaching the domain of nanotechnology. Studies of devices in this regime can only be carried out with the most advanced forms of microscopy. Accordingly, Microscopy of Semiconducting Materials focuses on international developments in semiconductor studies carried out by all forms of microscopy. It provides an overview of the latest instrumentation, analysis techniques, and state-of-the-art advances in semiconducting materials science for solid state physicists, chemists, and material scientists.
Author :Materials Research Society Publisher :Pittsburgh, Pa. : Materials Research Society ISBN 13 : Total Pages :424 pages Book Rating :4.3/5 (91 download)
Book Synopsis High Resolution Electron Microscopy of Defects in Materials: Volume 183 by : Materials Research Society
Download or read book High Resolution Electron Microscopy of Defects in Materials: Volume 183 written by Materials Research Society and published by Pittsburgh, Pa. : Materials Research Society. This book was released on 1990-08-10 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
