Microelectronic Test Structures for CMOS Technology

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Publisher : Springer Science & Business Media
ISBN 13 : 1441993770
Total Pages : 401 pages
Book Rating : 4.4/5 (419 download)

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Book Synopsis Microelectronic Test Structures for CMOS Technology by : Manjul Bhushan

Download or read book Microelectronic Test Structures for CMOS Technology written by Manjul Bhushan and published by Springer Science & Business Media. This book was released on 2011-08-26 with total page 401 pages. Available in PDF, EPUB and Kindle. Book excerpt: Microelectronic Test Structures for CMOS Technology and Products addresses the basic concepts of the design of test structures for incorporation within test-vehicles, scribe-lines, and CMOS products. The role of test structures in the development and monitoring of CMOS technologies and products has become ever more important with the increased cost and complexity of development and manufacturing. In this timely volume, IBM scientists Manjul Bhushan and Mark Ketchen emphasize high speed characterization techniques for digital CMOS circuit applications and bridging between circuit performance and characteristics of MOSFETs and other circuit elements. Detailed examples are presented throughout, many of which are equally applicable to other microelectronic technologies as well. The authors’ overarching goal is to provide students and technology practitioners alike a practical guide to the disciplined design and use of test structures that give unambiguous information on the parametrics and performance of digital CMOS technology.

CMOS Test and Evaluation

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Publisher : Springer
ISBN 13 : 1493913492
Total Pages : 424 pages
Book Rating : 4.4/5 (939 download)

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Book Synopsis CMOS Test and Evaluation by : Manjul Bhushan

Download or read book CMOS Test and Evaluation written by Manjul Bhushan and published by Springer. This book was released on 2014-12-03 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: CMOS Test and Evaluation: A Physical Perspective is a single source for an integrated view of test and data analysis methodology for CMOS products, covering circuit sensitivities to MOSFET characteristics, impact of silicon technology process variability, applications of embedded test structures and sensors, product yield, and reliability over the lifetime of the product. This book also covers statistical data analysis and visualization techniques, test equipment and CMOS product specifications, and examines product behavior over its full voltage, temperature and frequency range.

Proceedings of the ... IEEE International Conference on Microelectronic Test Structures, ICMTS.

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Author :
Publisher :
ISBN 13 :
Total Pages : 230 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Proceedings of the ... IEEE International Conference on Microelectronic Test Structures, ICMTS. by :

Download or read book Proceedings of the ... IEEE International Conference on Microelectronic Test Structures, ICMTS. written by and published by . This book was released on 1988 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Tradeoffs and Optimization in Analog CMOS Design

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Publisher : John Wiley & Sons
ISBN 13 : 047003369X
Total Pages : 632 pages
Book Rating : 4.4/5 (7 download)

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Book Synopsis Tradeoffs and Optimization in Analog CMOS Design by : David Binkley

Download or read book Tradeoffs and Optimization in Analog CMOS Design written by David Binkley and published by John Wiley & Sons. This book was released on 2008-09-15 with total page 632 pages. Available in PDF, EPUB and Kindle. Book excerpt: Analog CMOS integrated circuits are in widespread use for communications, entertainment, multimedia, biomedical, and many other applications that interface with the physical world. Although analog CMOS design is greatly complicated by the design choices of drain current, channel width, and channel length present for every MOS device in a circuit, these design choices afford significant opportunities for optimizing circuit performance. This book addresses tradeoffs and optimization of device and circuit performance for selections of the drain current, inversion coefficient, and channel length, where channel width is implicitly considered. The inversion coefficient is used as a technology independent measure of MOS inversion that permits design freely in weak, moderate, and strong inversion. This book details the significant performance tradeoffs available in analog CMOS design and guides the designer towards optimum design by describing: An interpretation of MOS modeling for the analog designer, motivated by the EKV MOS model, using tabulated hand expressions and figures that give performance and tradeoffs for the design choices of drain current, inversion coefficient, and channel length; performance includes effective gate-source bias and drain-source saturation voltages, transconductance efficiency, transconductance distortion, normalized drain-source conductance, capacitances, gain and bandwidth measures, thermal and flicker noise, mismatch, and gate and drain leakage current Measured data that validates the inclusion of important small-geometry effects like velocity saturation, vertical-field mobility reduction, drain-induced barrier lowering, and inversion-level increases in gate-referred, flicker noise voltage In-depth treatment of moderate inversion, which offers low bias compliance voltages, high transconductance efficiency, and good immunity to velocity saturation effects for circuits designed in modern, low-voltage processes Fabricated design examples that include operational transconductance amplifiers optimized for various tradeoffs in DC and AC performance, and micropower, low-noise preamplifiers optimized for minimum thermal and flicker noise A design spreadsheet, available at the book web site, that facilitates rapid, optimum design of MOS devices and circuits Tradeoffs and Optimization in Analog CMOS Design is the first book dedicated to this important topic. It will help practicing analog circuit designers and advanced students of electrical engineering build design intuition, rapidly optimize circuit performance during initial design, and minimize trial-and-error circuit simulations.

Reliability Wearout Mechanisms in Advanced CMOS Technologies

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Author :
Publisher : John Wiley & Sons
ISBN 13 : 047045525X
Total Pages : 642 pages
Book Rating : 4.4/5 (74 download)

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Book Synopsis Reliability Wearout Mechanisms in Advanced CMOS Technologies by : Alvin W. Strong

Download or read book Reliability Wearout Mechanisms in Advanced CMOS Technologies written by Alvin W. Strong and published by John Wiley & Sons. This book was released on 2009-10-13 with total page 642 pages. Available in PDF, EPUB and Kindle. Book excerpt: This invaluable resource tells the complete story of failure mechanisms—from basic concepts to the tools necessary to conduct reliability tests and analyze the results. Both a text and a reference work for this important area of semiconductor technology, it assumes no reliability education or experience. It also offers the first reference book with all relevant physics, equations, and step-by-step procedures for CMOS technology reliability in one place. Practical appendices provide basic experimental procedures that include experiment design, performing stressing in the laboratory, data analysis, reliability projections, and interpreting projections.

The ESD Handbook

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Publisher : John Wiley & Sons
ISBN 13 : 1119233135
Total Pages : 1172 pages
Book Rating : 4.1/5 (192 download)

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Book Synopsis The ESD Handbook by : Steven H. Voldman

Download or read book The ESD Handbook written by Steven H. Voldman and published by John Wiley & Sons. This book was released on 2021-03-25 with total page 1172 pages. Available in PDF, EPUB and Kindle. Book excerpt: A practical and comprehensive reference that explores Electrostatic Discharge (ESD) in semiconductor components and electronic systems The ESD Handbook offers a comprehensive reference that explores topics relevant to ESD design in semiconductor components and explores ESD in various systems. Electrostatic discharge is a common problem in the semiconductor environment and this reference fills a gap in the literature by discussing ESD protection. Written by a noted expert on the topic, the text offers a topic-by-topic reference that includes illustrative figures, discussions, and drawings. The handbook covers a wide-range of topics including ESD in manufacturing (garments, wrist straps, and shoes); ESD Testing; ESD device physics; ESD semiconductor process effects; ESD failure mechanisms; ESD circuits in different technologies (CMOS, Bipolar, etc.); ESD circuit types (Pin, Power, Pin-to-Pin, etc.); and much more. In addition, the text includes a glossary, index, tables, illustrations, and a variety of case studies. Contains a well-organized reference that provides a quick review on a range of ESD topics Fills the gap in the current literature by providing information from purely scientific and physical aspects to practical applications Offers information in clear and accessible terms Written by the accomplished author of the popular ESD book series Written for technicians, operators, engineers, circuit designers, and failure analysis engineers, The ESD Handbook contains an accessible reference to ESD design and ESD systems.

Proceedings of the 1990 IEEE International Conference on Microelectronic Test Structures

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Author :
Publisher :
ISBN 13 :
Total Pages : 244 pages
Book Rating : 4.:/5 (256 download)

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Book Synopsis Proceedings of the 1990 IEEE International Conference on Microelectronic Test Structures by : International Conference on Microelectronic Test Structures

Download or read book Proceedings of the 1990 IEEE International Conference on Microelectronic Test Structures written by International Conference on Microelectronic Test Structures and published by . This book was released on 1990 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt:

ESD

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Author :
Publisher : John Wiley & Sons
ISBN 13 : 1119992656
Total Pages : 260 pages
Book Rating : 4.1/5 (199 download)

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Book Synopsis ESD by : Steven H. Voldman

Download or read book ESD written by Steven H. Voldman and published by John Wiley & Sons. This book was released on 2011-04-04 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electrostatic discharge (ESD) continues to impact semiconductor components and systems as technologies scale from micro- to nano-electronics. This book studies electrical overstress, ESD, and latchup from a whole-chip ESD design synthesis approach. It provides a clear insight into the integration of ESD protection networks from a generalist perspective, followed by examples in specific technologies, circuits, and chips. Uniquely both the semiconductor chip integration issues and floorplanning of ESD networks are covered from a ‘top-down' design approach. Look inside for extensive coverage on: integration of cores, power bussing, and signal pins in DRAM, SRAM, CMOS image processing chips, microprocessors, analog products, RF components and how the integration influences ESD design and integration architecturing of mixed voltage, mixed signal, to RF design for ESD analysis floorplanning for peripheral and core I/O designs, and the implications on ESD and latchup guard ring integration for both a ‘bottom-up' and ‘top-down' methodology addressing I/O guard rings, ESD guard rings, I/O to I/O, and I/O to core classification of ESD power clamps and ESD signal pin circuitry, and how to make the correct choice for a given semiconductor chip examples of ESD design for the state-of-the-art technologies discussed, including CMOS, BiCMOS, silicon on insulator (SOI), bipolar technology, high voltage CMOS (HVCMOS), RF CMOS, and smart power practical methods for the understanding of ESD circuit power distribution, ground rule development, internal bus distribution, current path analysis, quality metrics ESD: Design and Synthesis is a continuation of the author's series of books on ESD protection. It is an essential reference for: ESD, circuit, and semiconductor engineers; design synthesis team leaders; layout design, characterisation, floorplanning, test and reliability engineers; technicians; and groundrule and test site developers in the manufacturing and design of semiconductor chips. It is also useful for graduate and undergraduate students in electrical engineering, semiconductor sciences, and manufacturing sciences, and on courses involving the design of ESD devices, chips and systems. This book offers a useful insight into the issues that confront modern technology as we enter the nano-electronic era.

Nanometer Variation-Tolerant SRAM

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Publisher : Springer Science & Business Media
ISBN 13 : 146141749X
Total Pages : 176 pages
Book Rating : 4.4/5 (614 download)

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Book Synopsis Nanometer Variation-Tolerant SRAM by : Mohamed Abu Rahma

Download or read book Nanometer Variation-Tolerant SRAM written by Mohamed Abu Rahma and published by Springer Science & Business Media. This book was released on 2012-09-26 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt: Variability is one of the most challenging obstacles for IC design in the nanometer regime. In nanometer technologies, SRAM show an increased sensitivity to process variations due to low-voltage operation requirements, which are aggravated by the strong demand for lower power consumption and cost, while achieving higher performance and density. With the drastic increase in memory densities, lower supply voltages, and higher variations, statistical simulation methodologies become imperative to estimate memory yield and optimize performance and power. This book is an invaluable reference on robust SRAM circuits and statistical design methodologies for researchers and practicing engineers in the field of memory design. It combines state of the art circuit techniques and statistical methodologies to optimize SRAM performance and yield in nanometer technologies. Provides comprehensive review of state-of-the-art, variation-tolerant SRAM circuit techniques; Discusses Impact of device related process variations and how they affect circuit and system performance, from a design point of view; Helps designers optimize memory yield, with practical statistical design methodologies and yield estimation techniques.

ESD Protection Device and Circuit Design for Advanced CMOS Technologies

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Publisher : Springer Science & Business Media
ISBN 13 : 1402083017
Total Pages : 228 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis ESD Protection Device and Circuit Design for Advanced CMOS Technologies by : Oleg Semenov

Download or read book ESD Protection Device and Circuit Design for Advanced CMOS Technologies written by Oleg Semenov and published by Springer Science & Business Media. This book was released on 2008-04-26 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt: ESD Protection Device and Circuit Design for Advanced CMOS Technologies is intended for practicing engineers working in the areas of circuit design, VLSI reliability and testing domains. As the problems associated with ESD failures and yield losses become significant in the modern semiconductor industry, the demand for graduates with a basic knowledge of ESD is also increasing. Today, there is a significant demand to educate the circuits design and reliability teams on ESD issues. This book makes an attempt to address the ESD design and implementation in a systematic manner. A design procedure involving device simulators as well as circuit simulator is employed to optimize device and circuit parameters for optimal ESD as well as circuit performance. This methodology, described in ESD Protection Device and Circuit Design for Advanced CMOS Technologies has resulted in several successful ESD circuit design with excellent silicon results and demonstrates its strengths.

Advances in Analog Circuits

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Publisher : BoD – Books on Demand
ISBN 13 : 9533073233
Total Pages : 384 pages
Book Rating : 4.5/5 (33 download)

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Book Synopsis Advances in Analog Circuits by : Esteban Tlelo-Cuautle

Download or read book Advances in Analog Circuits written by Esteban Tlelo-Cuautle and published by BoD – Books on Demand. This book was released on 2011-02-02 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book highlights key design issues and challenges to guarantee the development of successful applications of analog circuits. Researchers around the world share acquired experience and insights to develop advances in analog circuit design, modeling and simulation. The key contributions of the sixteen chapters focus on recent advances in analog circuits to accomplish academic or industrial target specifications.

Latchup

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Publisher : John Wiley & Sons
ISBN 13 : 9780470516164
Total Pages : 472 pages
Book Rating : 4.5/5 (161 download)

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Book Synopsis Latchup by : Steven H. Voldman

Download or read book Latchup written by Steven H. Voldman and published by John Wiley & Sons. This book was released on 2008-04-15 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: Interest in latchup is being renewed with the evolution of complimentary metal-oxide semiconductor (CMOS) technology, metal-oxide-semiconductor field-effect transistor (MOSFET) scaling, and high-level system-on-chip (SOC) integration. Clear methodologies that grant protection from latchup, with insight into the physics, technology and circuit issues involved, are in increasing demand. This book describes CMOS and BiCMOS semiconductor technology and their sensitivity to present day latchup phenomena, from basic over-voltage and over-current conditions, single event latchup (SEL) and cable discharge events (CDE), to latchup domino phenomena. It contains chapters focusing on bipolar physics, latchup theory, latchup and guard ring characterization structures, characterization testing, product level test systems, product level testing and experimental results. Discussions on state-of-the-art semiconductor processes, design layout, and circuit level and system level latchup solutions are also included, as well as: latchup semiconductor process solutions for both CMOS to BiCMOS, such as shallow trench, deep trench, retrograde wells, connecting implants, sub-collectors, heavily-doped buried layers, and buried grids – from single- to triple-well CMOS; practical latchup design methods, automated and bench-level latchup testing methods and techniques, latchup theory of logarithm resistance space, generalized alpha (a) space, beta (b) space, new latchup design methods– connecting the theoretical to the practical analysis, and; examples of latchup computer aided design (CAD) methodologies, from design rule checking (DRC) and logical-to-physical design, to new latchup CAD methodologies that address latchup for internal and external latchup on a local as well as global design level. Latchup acts as a companion text to the author’s series of books on ESD (electrostatic discharge) protection, serving as an invaluable reference for the professional semiconductor chip and system-level ESD engineer. Semiconductor device, process and circuit designers, and quality, reliability and failure analysis engineers will find it informative on the issues that confront modern CMOS technology. Practitioners in the automotive and aerospace industries will also find it useful. In addition, its academic treatment will appeal to both senior and graduate students with interests in semiconductor process, device physics, computer aided design and design integration.

Matching Properties of Deep Sub-Micron MOS Transistors

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Publisher : Springer Science & Business Media
ISBN 13 : 0387243135
Total Pages : 206 pages
Book Rating : 4.3/5 (872 download)

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Book Synopsis Matching Properties of Deep Sub-Micron MOS Transistors by : Jeroen A. Croon

Download or read book Matching Properties of Deep Sub-Micron MOS Transistors written by Jeroen A. Croon and published by Springer Science & Business Media. This book was released on 2006-06-20 with total page 206 pages. Available in PDF, EPUB and Kindle. Book excerpt: Matching Properties of Deep Sub-Micron MOS Transistors examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermore, due to the down-scaling of device dimensions, transistor mismatch has an increasing impact on digital circuits. The matching properties of MOSFETs are studied at several levels of abstraction: A simple and physics-based model is presented that accurately describes the mismatch in the drain current. The model is illustrated by dimensioning the unit current cell of a current-steering D/A converter. The most commonly used methods to extract the matching properties of a technology are bench-marked with respect to model accuracy, measurement accuracy and speed, and physical contents of the extracted parameters. The physical origins of microscopic fluctuations and how they affect MOSFET operation are investigated. This leads to a refinement of the generally applied 1/area law. In addition, the analysis of simple transistor models highlights the physical mechanisms that dominate the fluctuations in the drain current and transconductance. The impact of process parameters on the matching properties is discussed. The impact of gate line-edge roughness is investigated, which is considered to be one of the roadblocks to the further down-scaling of the MOS transistor. Matching Properties of Deep Sub-Micron MOS Transistors is aimed at device physicists, characterization engineers, technology designers, circuit designers, or anybody else interested in the stochastic properties of the MOSFET.

ESD Design and Analysis Handbook

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Publisher : Springer Science & Business Media
ISBN 13 : 1461503213
Total Pages : 214 pages
Book Rating : 4.4/5 (615 download)

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Book Synopsis ESD Design and Analysis Handbook by : James E. Vinson

Download or read book ESD Design and Analysis Handbook written by James E. Vinson and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electrostatic Discharge is a pervasive issue in the semiconductor industry affecting both manufacturers and users of semiconductors. This easy-to-read, practical handbook presents an overview of ESD as it effects electronic circuits and provides a concise introduction for students, engineers, circuit designers and failure analysts.

CMOS Technology for IC Biosensor and Applications

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Publisher : Xlibris Corporation
ISBN 13 : 1483646025
Total Pages : 292 pages
Book Rating : 4.4/5 (836 download)

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Book Synopsis CMOS Technology for IC Biosensor and Applications by : Dr. Abdullah Tashtoush

Download or read book CMOS Technology for IC Biosensor and Applications written by Dr. Abdullah Tashtoush and published by Xlibris Corporation. This book was released on 2013-07-23 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: About the Book The book includes a variety of techniques that are conducting biosensors as transducers. The single die has all of the biosensors implemented within it, which leads to a new generation of multibiosensors named as multi-labs-on-a-single chip (MLoC). Biosensors are analytical devices that combine a biologically sensitive element with a physical or chemical transducer to detect the presence of specific compounds selectively and quantitatively. This book explores the feasibility of microelectronic techniques in a successful attempt to get huge cost savings in mass production, fast reacting, and disposable biosensors. The book is lied in six chapters and four appendices. These sensors were implemented using CMOSP35 technology on a single-chip that covers new techniques for detecting biomedical and biological samples at low concentration level based on CMOS/MEMS technology batch process. The methodology of the proposed multibiosensors that is named by multi-lab-on-a-chip (MLoC); lies on miniaturizing transducers, which is based on optical CMOS technology, charge based capacitance measurements (CBCM), electrochemical impedance spectroscopy (EIS) and CMOS microcoils incorporating with interdigitated microelectrode array (IDMA). The aforementioned approaches technically proved their capability and reliability overwhelmingly among the used conventional techniques for that reason these techniques have been proposed to create compact and portable biosensors for sensitive and rapid detection of biomedical and biological samples. While the four proposed biosensors have common objectives they differ in the method and analysis used, and postulates engaged by a discipline to achieve the objectives; the inquiry of the principles of investigation in a particular field.

Artificial And Natural Perception: Proceedings Of The 2nd Italian Conference On Sensors And Microsystems

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Author :
Publisher : World Scientific
ISBN 13 : 9814545473
Total Pages : 406 pages
Book Rating : 4.8/5 (145 download)

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Book Synopsis Artificial And Natural Perception: Proceedings Of The 2nd Italian Conference On Sensors And Microsystems by : Corrado Di Natale

Download or read book Artificial And Natural Perception: Proceedings Of The 2nd Italian Conference On Sensors And Microsystems written by Corrado Di Natale and published by World Scientific. This book was released on 1998-01-15 with total page 406 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains a number of articles concerning the artificial perception of reality, as can be perceived by a sensor, and its interaction with natural human perception through the senses. For the first time, a link between the sensor's field and the more general perception theory is attempted. Besides, the book offers a unique insight provided by the research on sensors and microsystems currently being carried out in Italy. It covers the typical area of sensors and microsystems: chemical and biological sensors, physical sensors and micromechanics.

Test Structures for CMOS Latch-up Prediction

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Author :
Publisher :
ISBN 13 :
Total Pages : 180 pages
Book Rating : 4.E/5 ( download)

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Book Synopsis Test Structures for CMOS Latch-up Prediction by : Philip Joseph Oldiges

Download or read book Test Structures for CMOS Latch-up Prediction written by Philip Joseph Oldiges and published by . This book was released on 1985 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt: