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Metal Organic Chemical Vapor Deposition Of Aluminum Oxide For Advanced Gate Dielectric Applications
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Book Synopsis Metal-organic Chemical Vapor Deposition of Aluminum Oxide for Advanced Gate Dielectric Applications by : Spyridon Skordas
Download or read book Metal-organic Chemical Vapor Deposition of Aluminum Oxide for Advanced Gate Dielectric Applications written by Spyridon Skordas and published by . This book was released on 2004 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Metal Organic Chemical Vapor Deposition of Oxide Films for Advanced Applications by :
Download or read book Metal Organic Chemical Vapor Deposition of Oxide Films for Advanced Applications written by and published by . This book was released on 2000 with total page 13 pages. Available in PDF, EPUB and Kindle. Book excerpt: Transparent and conductive films, well known for their historical roles in solar cells and displays, are receiving renewed attention due to the need for increased performance requirements and for advanced applications that are being developed. While there are many methods to deposit thin films, Metal Organic Chemical Vapor Deposition (MOCVD) is of particular importance for producing high quality films over large areas in a manufacturing mode. Important features of MOCVD include excellent conformality of deposited films, elimination of pinhole type defects, the absence of radiation process induced damage, and low particle counts. Over the past several years, we have devoted our efforts to developing and advancing the MOCVD process and systems technology, primarily using Rotating Disk Reactors (RDRs), and advancing the breadth of deposited oxide materials for several applications. The deposition technology, which will be reviewed, has been scaled from a 5 deposition diameter through to 12 diameter. We have found that MOCVD has been able to produce a wide range of oxide materials under a variety of processing conditions and that the technology is readily scalable. Systems technology, processing parameters and results for MOCVD of transparent (visible and IR) and conductive oxides will be reviewed. Advanced materials development and applications such as production of luminescent or p-type ZnO and related oxides, development of amorphous, polycrystalline and single crystal films and applicability in photovoltaics, LEDs or lasers, detectors, and others will also be addressed.
Book Synopsis Precursors for Metal Organic Chemical Vapor Deposition (MOCVD) of ZrO_1tn2 and HfO_1tn2 Thin Films as Gate Dielectrics in Complementary Metal Oxide Semiconductor (CMOS) Devices by :
Download or read book Precursors for Metal Organic Chemical Vapor Deposition (MOCVD) of ZrO_1tn2 and HfO_1tn2 Thin Films as Gate Dielectrics in Complementary Metal Oxide Semiconductor (CMOS) Devices written by and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Metal Organic Chemical Vapor Deposition (MOCVD) of Thin Films of Aluminum Oxide and Aluminum Nitride on an Alumina Substrate by : Cristian Antonio Soto Lenz
Download or read book Metal Organic Chemical Vapor Deposition (MOCVD) of Thin Films of Aluminum Oxide and Aluminum Nitride on an Alumina Substrate written by Cristian Antonio Soto Lenz and published by . This book was released on 1994 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Novel Materials and Processes for Advanced CMOS: Volume 745 by : Mark I. Gardner
Download or read book Novel Materials and Processes for Advanced CMOS: Volume 745 written by Mark I. Gardner and published by . This book was released on 2003-03-25 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt: Progress in MOS integrated-circuit technology is largely driven by the ability to dimensionally scale the constituent components of individual devices and their associated interconnections. Given a set of materials with fixed properties, this scaling is finite and its predicted limits are rapidly approaching. The International Technology Roadmap for Semiconductors establishes the pace at which this scaling occurs and identifies many of the technological challenges ahead. This volume assembles representatives from the fields of materials science, physics, electrical and chemical engineering to provide an insightful review of current technology and understanding. Specifically, the intent is to discuss materials issues stemming from device scaling to sub-100nm technology nodes. Topics include: high-k characterization; atomic layer deposition; gate metal materials and integration; contacts and ultrashallow junction formation; theory and modeling and crystalline oxides for gate dielectrics.
Book Synopsis Physical and Electrical Characterization of Zirconium Dioxide as a MOSFET Gate Insulator by : Noel Philip Hoilien
Download or read book Physical and Electrical Characterization of Zirconium Dioxide as a MOSFET Gate Insulator written by Noel Philip Hoilien and published by . This book was released on 2004 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Tailored Functional Oxide Nanomaterials by : Chiara Maccato
Download or read book Tailored Functional Oxide Nanomaterials written by Chiara Maccato and published by John Wiley & Sons. This book was released on 2022-03-02 with total page 516 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tailored Functional Oxide Nanomaterials A comprehensive exploration of the preparation and application of metal oxide nanomaterials Tailored Functional Oxide Nanomaterials: From Design to Multi-Purpose Applications delivers a one-of-a-kind discussion of the fundamentals and key applications of metal oxide nanomaterials. The book explores everything from their preparation to the mastering of their characteristics in an interdisciplinary view. The distinguished authors address theoretical research and advanced technological utilizations, illustrating key issues for the understanding and real-world end-uses of the most important class of inorganic materials. The interplay between the design, preparation, chemico-physical characterization, and functional behaviors of metal oxide nanomaterials in a variety of fields is presented. Up-to-date work and knowledge on these materials is also described, with fulsome summaries of important applications that are relevant to researchers pursuing safety, sustainability, and energy end-uses. Readers will also find: A thorough introduction to vapor phase growth of metal oxide thin films and nanostructures Comprehensive explorations of addressing complex transition metal oxides at the nanoscale, including bottom-up syntheses of nano-objects and properties Practical discussions of nanosized oxides supported on mats of carbon nanotubes, including synthesis strategies and performances of Ti/CNT systems In-depth examinations of computational approaches to the study of oxide nanomaterials and nanoporous oxides Perfect for materials scientists, inorganic chemists, physicists, catalytic chemists, and chemical engineers, Tailored Functional Oxide Nanomaterials will also earn a place in the libraries of solid-state chemists.
Book Synopsis Silicon Materials-Processing, Characterization and Reliability: Volume 716 by : Janice L. Veteran
Download or read book Silicon Materials-Processing, Characterization and Reliability: Volume 716 written by Janice L. Veteran and published by . This book was released on 2002-10-11 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Book Synopsis Metal Organic Chemical Vapor Deposition of Indium Oxide for Ozone Sensing by : Chunyu Wang
Download or read book Metal Organic Chemical Vapor Deposition of Indium Oxide for Ozone Sensing written by Chunyu Wang and published by . This book was released on 2010 with total page 153 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Metal Organic Chemical Vapor Deposition and Atomic Layer Deposition of Strontium Oxide Films on Silicon Surfaces by : Amalia C. Cuadra
Download or read book Metal Organic Chemical Vapor Deposition and Atomic Layer Deposition of Strontium Oxide Films on Silicon Surfaces written by Amalia C. Cuadra and published by . This book was released on 2007 with total page 164 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial oxide films like strontium titanate (SrTiO3) grown on silicon have a wide range of potential applications, including high k-dielectric devices, ferroelectrics, optoelectronics, and buffer layers for the heteroepitaxy of III-V semiconductor as well other pervoskites and high-Tc superconductors. The crystalline structure of SrTiO3 consists of alternating sublayers of SrO and TiO2. The epitaxy of SrTiO3 on Si(100) must be initiated with the nucleation of the SrO sublayer first. This thesis presents the methodology used for growing SrO on Si(100) surfaces via metal organic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD). Sr(2,2,6,6-tetramethyl-3,5-heptanedionate) 2 [Sr(thd)2] is the beta-diketonate precursor used to conduct these film growth studies, but the use of this class of metal organic sources comes with several challenges. First, their thermal properties change with atmospheric exposure. Second, successful control of vapor delivery is challenging because beta-diketonates have low vapor pressures and their decomposition temperature is close to their vaporization temperature. Additionally, film growth results are difficult to reproduce because these compounds degrade with time. To overcome these challenges, we developed a Sr(thd)2 delivery scheme using a novel source vaporizer that successfully controls the vaporization and vapor transport to the growth surface under steady vapor pressure while preventing the decomposition of the solid source. This vaporization scheme has been able to grow SrO films on Si(100) with high uniformity and low carbon contamination, as shown with ex-situ Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), and time-of-flight secondary ion mass spectroscopy (TOF-SIMS). The MOCVD experiments provided enough evidence to encourage ALD investigations which incorporated the integration of the controlled vaporization with a ultra high vacuum (UHV) reaction chamber that provided the ability to conduct growth experiments on functionalized Si(100) surfaces. The ability to tune the chemistry on the Si(100)-2x1 surface can aid in guiding surface reactions of the metal organic precursor with the growth surface. Our goal has been to hydroxyl terminate the Si(100)-2x1 surface in order to nucleate SrO monolayers. Following the desorption of a protective chemical oxide layer, dissociative chemisorption of H2O is carried out in UHV to hydroxyl terminated Si(100)-2x1. Metal oxide growth can be correlated to the concentration of hydroxyl groups on the silicon surface due to the facilitation of ligand exchange from the surface. Furthermore, hydroxyl-terminated surfaces initiate two-dimensional nucleation of the metal oxide while avoiding incubation periods common to the ALD of metal oxide. In-situ AES and low energy electron diffraction LEED were used to investigate the crystalline quality of the nucleated monolayers and the epitaxial orientation of SrO films on Si(100)-2x1 surfaces. The results of the ALD experiments were, unfortunately, inconsistent. Nonetheless, the focus of this thesis is to show the methodology for developing growth protocols that can be used in ALD reactions on functionalized Si(100)-2x1 surfaces for the epitaxy of metal oxides.
Book Synopsis Metal-organic Chemical Vapor Deposition of Indium Oxide Based Transparent Conducting Oxide Thin Films by : Jun Ni
Download or read book Metal-organic Chemical Vapor Deposition of Indium Oxide Based Transparent Conducting Oxide Thin Films written by Jun Ni and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Four novel diamine adducts of bis(hexafluoroacetylacetonato)zinc [Zn(hfa)2·(diamine)] can be synthesized in a single step reaction. Single crystal x-ray diffraction studies reveal monomeric, six-coordinate structures. The thermal stabilities and vapor phase transport properties of these complexes are considerably greater than those of conventional solid/liquid zinc metal-organic chemical vapor deposition (MOCVD) precursors. Of the four complexes, bis(1,1,1,5,5,5-hexafluoro-2,4-pentadionato)(N,N '-diethylethylenediamine)zinc [Zn(hfa)2 ( N,N'-DEA)], is particularly effective in the growth of thin films of the transparent conducting oxide Zn- and Sn-doped In2O3 (ZITO) due to its superior volatility and low melting point of 64°C.
Book Synopsis Chemical Vapor Deposition of Aluminum Oxide from Aluminum Beta-diketonate Precursors by : Bradley P. Jones
Download or read book Chemical Vapor Deposition of Aluminum Oxide from Aluminum Beta-diketonate Precursors written by Bradley P. Jones and published by . This book was released on 1992 with total page 53 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis A Study of Aluminum and Zirconium Metal-organic Chemical Vapor Deposition Precursors by : Nicholas R. Wilk
Download or read book A Study of Aluminum and Zirconium Metal-organic Chemical Vapor Deposition Precursors written by Nicholas R. Wilk and published by . This book was released on 2000 with total page 134 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Atomic Layer Deposition of Thin Films by : David Mark Fryauf
Download or read book Atomic Layer Deposition of Thin Films written by David Mark Fryauf and published by . This book was released on 2016 with total page 129 pages. Available in PDF, EPUB and Kindle. Book excerpt: Atomic layer deposition (ALD) is a self-limiting subset of chemical vapor deposition that has become widely popular in materials science applications such as device packaging, semiconductor passivation, transistor gate dielectrics, optical coatings, and protective barriers. ALD is capable of uniformly coating high-aspect ratio features, such as 1-dimensional nanostructures or pinhole-sized vias, across a macroscopic distance which is expected to only be limited by the size of the deposition chamber. This work reviews several applications of ALD used to deposit thin conformal layers of dielectric material which specifically capitalize on the precise, conformal nature of the deposition process. Semiconductor nanowire networks coated with aluminum oxide (AlOx) by plasma enhanced ALD (PEALD) show blue-shifted photoluminescence with increasing AlOx thickness. Novel memristor 0́edge0́+ devices fabricated with an active switching layer of titanium dioxide deposited by PEALD yield an active device cross-section two orders of magnitude smaller than what is possible with conventional 2-dimensional thin film devices fabricated by similar photolithography methods. Protected silver mirrors coated with AlOx deposited by PEALD have superior durability when compared to mirrors coated with an identical layer of AlOx deposited by conventional physical vapor deposition. All of these applications benefit from the robust uniform coating properties of the ALD growth mechanism. Additional studies of dielectric barrier overlayers deposited by ALD on silver mirrors are discussed, and a figure of merit is proposed for judging overall mirror performance.
Book Synopsis Plasma Enhanced Chemical Vapor Deposition of Thin Aluminum Oxide Films by : Larry M. Miller
Download or read book Plasma Enhanced Chemical Vapor Deposition of Thin Aluminum Oxide Films written by Larry M. Miller and published by . This book was released on 1993 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Metalorganic Chemical Vapor Deposition and Characterization of (Al, Si)O Dielectrics for GaN-based Devices by :
Download or read book Metalorganic Chemical Vapor Deposition and Characterization of (Al, Si)O Dielectrics for GaN-based Devices written by and published by . This book was released on 2016 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this study, we report on the growth and electrical characterization of (Al, Si)O dielectrics grown by metalorganic chemical vapor deposition (MOCVD) using trimethylaluminum, oxygen, and silane as precursors. The growth rates, refractive indices, and composition of (Al, Si)O films grown on Si(001) were determined from ellipsometry and XPS measurements. Crystallinity and electrical properties of (Al, Si)O films grown in situ on c-plane GaN were characterized using grazing incidence X-ray diffraction and capacitance-voltage with current-voltage measurements, respectively. Si concentration in the films was found to be tunable by varying the trimethylaluminum and/or oxygen precursor flows. The Si incorporation suppressed the formation of crystalline domains, leading to amorphous films that resulted in reduced interfacial trap density, low gate leakage and ultra-low hysteresis in (Al, Si)O/n-GaN MOS-capacitors.
Book Synopsis Complex Metal Oxide Thin Film Growth by Metalorganic Chemical Vapor Deposition by :
Download or read book Complex Metal Oxide Thin Film Growth by Metalorganic Chemical Vapor Deposition written by and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
