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Metal Insulator Semiconductor Structures And Algan Gan Hetero Junctions Based On Cubic Group Iii Nitrides
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Book Synopsis Metal-insulator-semiconductor Structures and AlGaN/GaN Hetero-junctions Based on Cubic Group-III Nitrides by : Alexander Zado
Download or read book Metal-insulator-semiconductor Structures and AlGaN/GaN Hetero-junctions Based on Cubic Group-III Nitrides written by Alexander Zado and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Metal-insulator-semiconductor Structures and AlGaN/GaN Hetero-junctions Based on Cubic Group-III Nitrides by : Alexander Zado
Download or read book Metal-insulator-semiconductor Structures and AlGaN/GaN Hetero-junctions Based on Cubic Group-III Nitrides written by Alexander Zado and published by . This book was released on 2015 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Cubic AlGaN/GaN hetero-junction field effect transistor structures were fabricated by plasma assisted molecular beam epitaxy on 3C-SiC (001) substrates. The structural quality of the layers was controlled in-situ by reflection high energy electron diffraction and ex-situ by high resolution x-ray diffraction, atomic force microscopy and time of flight secondary ion mass spectroscopy. Metal-Insulator-Semiconductor structures were realized using plasma assisted molecular beam epitaxy and plasma enhanced chemical vapour deposition. The characterization of the structures was performed using electrical techniques like capacitance-voltage-, current-voltage-, Hall effect-measurements and admittance spectroscopy.To improve the gate characteristics an insulating layer is required. Insulating SiO2 and Si3N4 layers were produced using plasma enhanced chemical vapour deposition. An in-situ method of deposition of Si3N4 directly inside the molecular beam epitaxy chamber is discussed. The metal-insulator-hetero-junction-semiconductor-structures were characterized by capacitance-voltage- and admittance-spectroscopy-measurements.Several techniques were analysed to electrically isolate the conductive substrate from the active transistor device. For the free standing high conductive 3C-SiC substrate to drop the conductivity of the cubic GaN buffer layer carbon doping was used. Due to a large conduction band offset between cubic GaN and cubic AlN asymmetric multi quantum well structures were grown to prohibit current flow towards the substrate. Using several assembly techniques transistor devices were fabricated. A cubic GaN field effect transistor operation is presented. Metal-insulator-semiconductor-hetero-junction field effect transistors with normally-on and normally-off characteristic were realized. ; eng
Book Synopsis Nitride Wide Bandgap Semiconductor Material and Electronic Devices by : Yue Hao
Download or read book Nitride Wide Bandgap Semiconductor Material and Electronic Devices written by Yue Hao and published by CRC Press. This book was released on 2016-11-03 with total page 325 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.
Book Synopsis Heterojunctions and Metal Semiconductor Junctions by : A.G. Milnes
Download or read book Heterojunctions and Metal Semiconductor Junctions written by A.G. Milnes and published by Elsevier. This book was released on 2012-12-02 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt: Heterojunctions and Metal-Semiconductor Junctions discusses semiconductor-semiconductor heterojunctions and metal-semiconductor heterojunctions, which are of significant practical importance today and also of considerable scientific interest, with worthwhile problems still to be explored and understood. Many classes of heterojunctions are believed to have new and valuable applications. Although some aspects of heterojunction behavior remain areas for continued scientific and technological study, the main outlines of the subject are clear. This book comprises nine chapters, and begins with an introduction to semiconductor heterojunctions. Succeeding chapters then discuss semiconductor p-n heterojunction models and diode behavior; heterojunction transistors; isotype (n-n, p-p) heterojunctions; optical properties of heterojunctions and heterojunction lasers; metal-semiconductor barriers; metal-semiconductor junction behavior; high yield photoemissive cathodes; and fabrication of heterojunctions. This book will be of interest to practitioners in the fields of applied physics.
Book Synopsis Nitride Based Metal Insulator Semiconductor Heterostructure Material and Device Design and Characterization by : Jiechen Wu
Download or read book Nitride Based Metal Insulator Semiconductor Heterostructure Material and Device Design and Characterization written by Jiechen Wu and published by . This book was released on 2014 with total page 87 pages. Available in PDF, EPUB and Kindle. Book excerpt: Al2O3/AlGaN/GaN metal-insulator-semiconductor-heterostructures (MISH) were designed, fabricated and characterized. The effects of different dielectric deposition techniques, surface treatments and post deposition treatments were investigated by comprehensive material and electrical characterization to understand the Al2O3 dielectric and Al2O3/AlGaN interfacial properties. Thermal ALD and PEALD Al2O3 thin films were successfully deposited on MBE grown AlGaN/GaN layers. An XPS study reveals the band offset of Al2O3/AlGaN interface. In addition, pre-deposition treatments show a reduction of Ga-O bonds at the interface after ALD growth. The fabrication of Al2O3/AlGaN/GaN MISH diodes were achieved with deposition of Ti/Al/Ni/Au ohmic contacts and Ni/Au gate contacts. C-V characterization of MISH diodes was applied to evaluate Al2O3/AlGaN interface states. Traps with different energy levels were differentiated by C-V hysteresis curves and multi-frequency C-V. C-V analysis suggests that PEALD provides better film quality with lower defect densities than thermal ALD. The implementation of NH3 and N2 pre-deposition surface plasma treatment and N2 post-deposition annealing can also improve interfacial properties. Al2O3 dielectric thin film leakage current and conduction mechanisms were also studied by I-V characterization. PEALD Al2O3 thin films exhibit better leakage current suppression compared to thermal ALD films. Temperature dependent I-V characterization shows that Poole-Frenkel emission dominates in dielectric current transport at medium electric fields, while at high electric fields, Fowler-Nordheim tunneling and trap-assisted tunneling dominate at low and high temperatures, respectively. Various dielectric reliability tests were employed on Al2O3 thin films. The results of time dependent dielectric breakdown (TDDB) test can be fit into 1/E field dependent model and a Weibull slope of 2.87 is extracted for PEALD Al2O3 thin films. The dielectric breakdown field distribution statistics show that PEALD Al2O3 films have a larger average dielectric breakdown field than thermal ALD films, and the plasma N2O post deposition annealing improves the average breakdown field. The improvements from integration of pre-deposition and post deposition treatments may offer a better device performance and reliability in MIS-HEMTs, and enable further progress and development of nitride based power electronics.
Book Synopsis Proceedings of the Topical Workshop on III-V Nitrides by : Isamu Akasaki
Download or read book Proceedings of the Topical Workshop on III-V Nitrides written by Isamu Akasaki and published by . This book was released on 1997 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2692 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis GaN and Related Materials by : Stephen J. Pearton
Download or read book GaN and Related Materials written by Stephen J. Pearton and published by CRC Press. This book was released on 2021-10-08 with total page 556 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents views on current developments in heat and mass transfer research related to the modern development of heat exchangers. Devotes special attention to the different modes of heat and mass transfer mechanisms in relation to the new development of heat exchangers design. Dedicates particular attention to the future needs and demands for further development in heat and mass transfer. GaN and related materials are attracting tremendous interest for their applications to high-density optical data storage, blue/green diode lasers and LEDs, high-temperature electronics for high-power microwave applications, electronics for aerospace and automobiles, and stable passivation films for semiconductors. In addition, there is great scientific interest in the nitrides, because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. This series provides a forum for the latest research in this rapidly-changing field, offering readers a basic understanding of new developments in recent research. Series volumes feature a balance between original theoretical and experimental research in basic physics, device physics, novel materials and quantum structures, processing, and systems.
Book Synopsis Power GaN Devices by : Matteo Meneghini
Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Book Synopsis Polarization Effects in Semiconductors by : Debdeep Jena
Download or read book Polarization Effects in Semiconductors written by Debdeep Jena and published by Springer Science & Business Media. This book was released on 2008 with total page 523 pages. Available in PDF, EPUB and Kindle. Book excerpt: Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications presents the latest understanding of the solid state physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of wurtzite compound semiconductors, and associated piezo-electric effects in strained thin film heterostructures. These heterostructures are used in wide band gap semiconductor based sensors, in addition to various electronic and opto-electronic semiconductor devices. The book covers the ab initio theory of polarization in cubic and hexagonal semiconductors, growth of thin film GaN, GaN/AlGaN GaAlN/ AlGaInN, and other nitrides, and SiC heterostructures. It discusses the effects of spontaneous and piezoelectric polarization on band diagrams and electronic properties of abrupt and compositionally graded heterostructures, electronic characterization of polarization-induced charge distributions by scanning-probe spectroscopies, and gauge factors and strain effects. In addition, polarization in extended defects, piezo-electric strain/charge engineering, and application to device design and processing are covered. The effects of polarization on the fundamental electron transport properties, and on the basic optical transitions are described. The crucial role of polarization in devices such as high electron mobility transistors (HEMTs) and light-emitting diodes (LEDs) is covered. The chapters are authored by professors and researchers in the fields of physics, applied physics and electrical engineering, who worked for 5 years under the "Polarization Effects in Semiconductors" DOD funded Multi Disciplinary University Research Initiative. This book will be of interest to graduate students and researchers working in the field of wide-bandgap semiconductor physics and their device applications. It will also be useful for practicing engineers in the field of wide-bandgap semiconductor device research and development.
Book Synopsis Optoelectronic Devices by : M Razeghi
Download or read book Optoelectronic Devices written by M Razeghi and published by Elsevier. This book was released on 2004 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
Download or read book Ceramic Abstracts written by and published by . This book was released on 1998 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis III-Nitride Semiconductors by : M.O. Manasreh
Download or read book III-Nitride Semiconductors written by M.O. Manasreh and published by Elsevier. This book was released on 2000-12-06 with total page 463 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.
Book Synopsis Solid State Properties by : Mildred Dresselhaus
Download or read book Solid State Properties written by Mildred Dresselhaus and published by Springer. This book was released on 2018-01-17 with total page 521 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book fills a gap between many of the basic solid state physics and materials sciencebooks that are currently available. It is written for a mixed audience of electricalengineering and applied physics students who have some knowledge of elementaryundergraduate quantum mechanics and statistical mechanics. This book, based on asuccessful course taught at MIT, is divided pedagogically into three parts: (I) ElectronicStructure, (II) Transport Properties, and (III) Optical Properties. Each topic is explainedin the context of bulk materials and then extended to low-dimensional materials whereapplicable. Problem sets review the content of each chapter to help students to understandthe material described in each of the chapters more deeply and to prepare them to masterthe next chapters.
Book Synopsis Semiconductor Optoelectronic Devices by : Joachim Piprek
Download or read book Semiconductor Optoelectronic Devices written by Joachim Piprek and published by Elsevier. This book was released on 2013-10-22 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt: Optoelectronics has become an important part of our lives. Wherever light is used to transmit information, tiny semiconductor devices are needed to transfer electrical current into optical signals and vice versa. Examples include light emitting diodes in radios and other appliances, photodetectors in elevator doors and digital cameras, and laser diodes that transmit phone calls through glass fibers. Such optoelectronic devices take advantage of sophisticated interactions between electrons and light. Nanometer scale semiconductor structures are often at the heart of modern optoelectronic devices. Their shrinking size and increasing complexity make computer simulation an important tool to design better devices that meet ever rising perfomance requirements. The current need to apply advanced design software in optoelectronics follows the trend observed in the 1980's with simulation software for silicon devices. Today, software for technology computer-aided design (TCAD) and electronic design automation (EDA) represents a fundamental part of the silicon industry. In optoelectronics, advanced commercial device software has emerged recently and it is expected to play an increasingly important role in the near future. This book will enable students, device engineers, and researchers to more effectively use advanced design software in optoelectronics. Provides fundamental knowledge in semiconductor physics and in electromagnetics, while helping to understand and use advanced device simulation software Demonstrates the combination of measurements and simulations in order to obtain realistic results and provides data on all required material parameters Gives deep insight into the physics of state-of-the-art devices and helps to design and analyze of modern optoelectronic devices
Book Synopsis Wide Bandgap Based Devices by : Farid Medjdoub
Download or read book Wide Bandgap Based Devices written by Farid Medjdoub and published by MDPI. This book was released on 2021-05-26 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices
Book Synopsis Diode Lasers and Photonic Integrated Circuits by : Larry A. Coldren
Download or read book Diode Lasers and Photonic Integrated Circuits written by Larry A. Coldren and published by John Wiley & Sons. This book was released on 2012-03-02 with total page 752 pages. Available in PDF, EPUB and Kindle. Book excerpt: Diode Lasers and Photonic Integrated Circuits, Second Edition provides a comprehensive treatment of optical communication technology, its principles and theory, treating students as well as experienced engineers to an in-depth exploration of this field. Diode lasers are still of significant importance in the areas of optical communication, storage, and sensing. Using the the same well received theoretical foundations of the first edition, the Second Edition now introduces timely updates in the technology and in focus of the book. After 15 years of development in the field, this book will offer brand new and updated material on GaN-based and quantum-dot lasers, photonic IC technology, detectors, modulators and SOAs, DVDs and storage, eye diagrams and BER concepts, and DFB lasers. Appendices will also be expanded to include quantum-dot issues and more on the relation between spontaneous emission and gain.
