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Author : Sujit Pillai
Publisher :
ISBN 13 :
Total Pages : 226 pages
Book Rating : 4.:/5 (34 download)
Download or read book Metal Contacts to P-type Gallium Nitride written by Sujit Pillai and published by . This book was released on 1999 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Bo Liu
Publisher :
ISBN 13 :
Total Pages : 350 pages
Book Rating : 4.:/5 (474 download)
Download or read book Ohmic Contacts to P-type Gallium Nitride written by Bo Liu and published by . This book was released on 2001 with total page 350 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Kristen Joy Duxstad
Publisher :
ISBN 13 :
Total Pages : 380 pages
Book Rating : 4.:/5 (34 download)
Download or read book Metal Contacts on ZnSe and GaN written by Kristen Joy Duxstad and published by . This book was released on 1997 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Rüdiger Quay
Publisher : Springer Science & Business Media
ISBN 13 : 3540718923
Total Pages : 492 pages
Book Rating : 4.5/5 (47 download)
Download or read book Gallium Nitride Electronics written by Rüdiger Quay and published by Springer Science & Business Media. This book was released on 2008-04-05 with total page 492 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is based on nearly a decade of materials and electronics research at the leading research institution on the nitride topic in Europe. It is a comprehensive monograph and tutorial that will be of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; to all scientists with a general interest in advanced electronics.
Author : Michael Shur
Publisher : World Scientific
ISBN 13 : 9789812562364
Total Pages : 310 pages
Book Rating : 4.5/5 (623 download)
Download or read book GaN-based Materials and Devices written by Michael Shur and published by World Scientific. This book was released on 2004 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt: The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.
Author : Stephen J. Pearton
Publisher : Springer Science & Business Media
ISBN 13 : 9781852339357
Total Pages : 402 pages
Book Rating : 4.3/5 (393 download)
Download or read book Gallium Nitride Processing for Electronics, Sensors and Spintronics written by Stephen J. Pearton and published by Springer Science & Business Media. This book was released on 2006-02-24 with total page 402 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics. Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.
Author : Stephen J. Pearton
Publisher : Springer Science & Business Media
ISBN 13 : 1846283590
Total Pages : 383 pages
Book Rating : 4.8/5 (462 download)
Download or read book Gallium Nitride Processing for Electronics, Sensors and Spintronics written by Stephen J. Pearton and published by Springer Science & Business Media. This book was released on 2006-07-06 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics. Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.
Author : Lars Fredrik Voss
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (664 download)
Download or read book Thermally Stable Ohmic and Schottky Contacts to GaN written by Lars Fredrik Voss and published by . This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT: This dissertation is focused on the development of Ohmic and Schottky contacts to both nand p-type Gallium Nitride for use in microelectronic and optical devices. The goal is to develop low resistance contacts with greater thermal budgets and superior thermal aging characteristics to those commonly in use today as well as to understand the mechanisms by which these contacts may fail. In addition, p-type Ohmic contacts have been used to fabricate light emitting diodes (LEDs) which display far superior aging properties than those made with conventional Ni/Au contacts. Ohmic contacts to p-GaN were fabricated using a variety of refractory materials. The materials examined were of three basic types: boride, nitride, and the refractory metal Ir. The boride family includes W2B, W2B5, CrB2, ZrB2, and TiB2. The nitrides examined were TaN, TiN, and ZrN. Contacts based on these materials were fabricated using either a GaN//Ni/Au/X/Ti/Au, GaN//X/Ti/Au, or GaN//Ni/X/Au scheme, where X is the refractory material. Contact resistances as low as ~1 x 10-4 ohm/cm2 were consistently achieved after annealing at temperatures from 500-1000°C for 60 s in N2 using these materials for p-GaN with a carrier concentration of ~1 x 1017 cm-3.
Author : Hiromasa Omiya
Publisher :
ISBN 13 :
Total Pages : 150 pages
Book Rating : 4.:/5 (589 download)
Download or read book Microstructural and Electrical Characterization of Metallic Contacts on P-type Gallium Nitride written by Hiromasa Omiya and published by . This book was released on 2004 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Rico Hentschel
Publisher : BoD – Books on Demand
ISBN 13 : 3752641762
Total Pages : 156 pages
Book Rating : 4.7/5 (526 download)
Download or read book Vertical Gallium Nitride PowerDevices: Fabrication and Characterisation written by Rico Hentschel and published by BoD – Books on Demand. This book was released on 2021-01-03 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt: Efficient power conversion is essential to face the continuously increasing energy consumption of our society. GaN based vertical power field effect transistors provide excellent performance figures for power-conversion switches, due to their capability of handling high voltages and current densities with very low area consumption. This work focuses on a vertical trench gate metal oxide semiconductor field effect transistor (MOSFET) with conceptional advantages in a device fabrication preceded GaN epitaxy and enhancement mode characteristics. The functional layer stack comprises from the bottom an n+/n--drift/p-body/n+-source GaN layer sequence. Special attention is paid to the Mg doping of the p-GaN body layer, which is a complex topic by itself. Hydrogen passivation of magnesium plays an essential role, since only the active (hydrogen-free) Mg concentration determines the threshold voltage of the MOSFET and the blocking capability of the body diode. Fabrication specific challenges of the concept are related to the complex integration, formation of ohmic contacts to the functional layers, the specific implementation and processing scheme of the gate trench module and the lateral edge termination. The maximum electric field, which was achieved in the pn- junction of the body diode of the MOSFET is estimated to be around 2.1 MV/cm. From double-sweep transfer measurements with relatively small hysteresis, steep subthreshold slope and a threshold voltage of 3 - 4 V a reasonably good Al2O3/GaN interface quality is indicated. In the conductive state a channel mobility of around 80 - 100 cm2/Vs is estimated. This value is comparable to device with additional overgrowth of the channel. Further enhancement of the OFF-state and ON-state characteristics is expected for optimization of the device termination and the high-k/GaN interface of the vertical trench gate, respectively. From the obtained results and dependencies key figures of an area efficient and competitive device design with thick drift layer is extrapolated. Finally, an outlook is given and advancement possibilities as well as technological limits are discussed.
Author : Alex Lidow
Publisher : John Wiley & Sons
ISBN 13 : 1119594421
Total Pages : 470 pages
Book Rating : 4.1/5 (195 download)
Download or read book GaN Transistors for Efficient Power Conversion written by Alex Lidow and published by John Wiley & Sons. This book was released on 2019-08-12 with total page 470 pages. Available in PDF, EPUB and Kindle. Book excerpt: An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.
Download or read book Development and Characterization of Ohmic and Schottky Contacts for Gallium Nitride and Aluminum Gallium Nitride Devices written by and published by . This book was released on 2002 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher : Academic Press
ISBN 13 : 0080864554
Total Pages : 509 pages
Book Rating : 4.0/5 (88 download)
Download or read book Gallium-Nitride (GaN) II written by and published by Academic Press. This book was released on 1998-10-22 with total page 509 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
Author : Farid Medjdoub
Publisher : CRC Press
ISBN 13 : 1482220040
Total Pages : 372 pages
Book Rating : 4.4/5 (822 download)
Download or read book Gallium Nitride (GaN) written by Farid Medjdoub and published by CRC Press. This book was released on 2017-12-19 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.
Author : T. D. Moustakas
Publisher : The Electrochemical Society
ISBN 13 : 9781566772129
Total Pages : 246 pages
Book Rating : 4.7/5 (721 download)
Download or read book Proceedings of the Third Symposium on III-V Nitride Materials and Processes written by T. D. Moustakas and published by The Electrochemical Society. This book was released on 1999 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 538 pages
Book Rating : 4.3/5 (91 download)
Download or read book Gallium Nitride and Related Materials written by and published by . This book was released on 1997 with total page 538 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : R. Szweda
Publisher : Elsevier
ISBN 13 : 0080532306
Total Pages : 459 pages
Book Rating : 4.0/5 (85 download)
Download or read book Gallium Nitride and Related Wide Bandgap Materials and Devices written by R. Szweda and published by Elsevier. This book was released on 2000-07-07 with total page 459 pages. Available in PDF, EPUB and Kindle. Book excerpt: The second edition of Gallium Nitride & Related Wide Bandgap Materials and Devices provides a detailed insight into the global developments in GaN, SiC and other optoelectronic materials. This report also examines the implication for both suppliers and users of GaN technology. For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.
