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Author : Prashant Balvant Phatak
Publisher :
ISBN 13 :
Total Pages : 246 pages
Book Rating : 4.:/5 (33 download)
Download or read book Mechanism of the Schottky Contact Formation in Metal/GaAs System written by Prashant Balvant Phatak and published by . This book was released on 1995 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Winfried Mönch
Publisher : Springer Science & Business Media
ISBN 13 : 9400906579
Total Pages : 302 pages
Book Rating : 4.4/5 (9 download)
Download or read book Electronic Structure of Metal-Semiconductor Contacts written by Winfried Mönch and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt: Interface and surface science have been important in the development of semicon ductor physics right from the beginning on. Modern device concepts are not only based on p-n junctions, which are interfaces between regions containing different types of dopants, but take advantage of the electronic properties of semiconductor insulator interfaces, heterojunctions between distinct semiconductors, and metal semiconductor contacts. The latter ones stood almost at the very beginning of semi conductor physics at the end of the last century. The rectifying properties of metal-semiconductor contacts were first described by Braun in 1874. A physically correct explanation of unilateral conduction, as this deviation from Ohm's law was called, could not be given at that time. A prerequisite was Wilson's quantum theory of electronic semi-conductors which he published in 1931. A few years later, in 1938, Schottky finally explained the rectification at metal-semiconductor contacts by a space-
Author : Kevin R. Stiles
Publisher :
ISBN 13 :
Total Pages : 322 pages
Book Rating : 4.:/5 (81 download)
Download or read book Kinetics of Schottky Barrier Formation at Metal/GaAs(110) Interfaces written by Kevin R. Stiles and published by . This book was released on 1988 with total page 322 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Chia-Ping Chen
Publisher :
ISBN 13 :
Total Pages : 344 pages
Book Rating : 4.:/5 (89 download)
Download or read book An Investigation of the Schottky Barrier Enhancement to N-GaAs written by Chia-Ping Chen and published by . This book was released on 1995 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Simon S. Cohen
Publisher : Academic Press
ISBN 13 : 1483217795
Total Pages : 435 pages
Book Rating : 4.4/5 (832 download)
Download or read book Metal – Semiconductor Contacts and Devices written by Simon S. Cohen and published by Academic Press. This book was released on 2014-12-01 with total page 435 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices. This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularly, ohmic contacts. Contacts that involve polycrystalline silicon; applications of the metal-semiconductor barriers in MOS, bipolar, and MESFET digital integrated circuits; and methods for measuring the barrier height are covered as well. Process engineers, device physicists, circuit designers, and students of this discipline will find the book very useful.
Author : Christopher Scott Gworek
Publisher :
ISBN 13 :
Total Pages : 110 pages
Book Rating : 4.:/5 (34 download)
Download or read book The Schottky Barrier Height of Noble Metal Schottky Contacts to N-GaAs Under Hydrostatic Pressure written by Christopher Scott Gworek and published by . This book was released on 1999 with total page 110 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Rena Fourkas
Publisher :
ISBN 13 :
Total Pages : 156 pages
Book Rating : 4.:/5 (7 download)
Download or read book Formation of Shannon Contacts to N-type GaAs for GaAs MESFET Gate Contact written by Rena Fourkas and published by . This book was released on 1988 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Simon M. Sze
Publisher : John Wiley & Sons
ISBN 13 : 1119429110
Total Pages : 944 pages
Book Rating : 4.1/5 (194 download)
Download or read book Physics of Semiconductor Devices written by Simon M. Sze and published by John Wiley & Sons. This book was released on 2021-03-03 with total page 944 pages. Available in PDF, EPUB and Kindle. Book excerpt: The new edition of the most detailed and comprehensive single-volume reference on major semiconductor devices The Fourth Edition of Physics of Semiconductor Devices remains the standard reference work on the fundamental physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. This fully updated and expanded edition includes approximately 1,000 references to original research papers and review articles, more than 650 high-quality technical illustrations, and over two dozen tables of material parameters. Divided into five parts, the text first provides a summary of semiconductor properties, covering energy band, carrier concentration, and transport properties. The second part surveys the basic building blocks of semiconductor devices, including p-n junctions, metal-semiconductor contacts, and metal-insulator-semiconductor (MIS) capacitors. Part III examines bipolar transistors, MOSFETs (MOS field-effect transistors), and other field-effect transistors such as JFETs (junction field-effect-transistors) and MESFETs (metal-semiconductor field-effect transistors). Part IV focuses on negative-resistance and power devices. The book concludes with coverage of photonic devices and sensors, including light-emitting diodes (LEDs), solar cells, and various photodetectors and semiconductor sensors. This classic volume, the standard textbook and reference in the field of semiconductor devices: Provides the practical foundation necessary for understanding the devices currently in use and evaluating the performance and limitations of future devices Offers completely updated and revised information that reflects advances in device concepts, performance, and application Features discussions of topics of contemporary interest, such as applications of photonic devices that convert optical energy to electric energy Includes numerous problem sets, real-world examples, tables, figures, and illustrations; several useful appendices; and a detailed solutions manual for Instructor's only Explores new work on leading-edge technologies such as MODFETs, resonant-tunneling diodes, quantum-cascade lasers, single-electron transistors, real-space-transfer devices, and MOS-controlled thyristors Physics of Semiconductor Devices, Fourth Edition is an indispensable resource for design engineers, research scientists, industrial and electronics engineering managers, and graduate students in the field.
Author : Jian Ding
Publisher :
ISBN 13 :
Total Pages : 292 pages
Book Rating : 4.:/5 (7 download)
Download or read book Thermally Stable Metal/GaAs Contacts written by Jian Ding and published by . This book was released on 1989 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Albert G. Baca
Publisher : IET
ISBN 13 : 9780863413537
Total Pages : 372 pages
Book Rating : 4.4/5 (135 download)
Download or read book Fabrication of GaAs Devices written by Albert G. Baca and published by IET. This book was released on 2005-09 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides fundamental and practical information on all aspects of GaAs processing and gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors) and FETs (Field Effect Transistors), how these relate to processing choices, and special processing issues such as wet oxidation, which are especially important in optoelectronic devices. This book is suitable for both new and practising engineers.
Author : Electrochemical Society
Publisher :
ISBN 13 :
Total Pages : 372 pages
Book Rating : 4.F/5 ( download)
Download or read book Ohmic Contacts to Semiconductors written by Electrochemical Society and published by . This book was released on 1969 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher : Cuvillier Verlag
ISBN 13 : 3736912161
Total Pages : 294 pages
Book Rating : 4.7/5 (369 download)
Download or read book Cross-sectional Scanning Tunneling Microscopy of Au contacts on GaAs(110) written by and published by Cuvillier Verlag. This book was released on 2004-09-20 with total page 294 pages. Available in PDF, EPUB and Kindle. Book excerpt: In dieser Arbeit wurden mithilfe von Rastertunnelmikroskopie und –spektroskopie die strukturellen und elektronischen Eigenschaften von Metall-Halbleiter-Kontakten (Schottky-Kontakten) auf der atomaren Skala untersucht. Für diese Untersuchungen wurde der neuartige Zugang in der Querschnitts-Geometrie gewählt. Dieser hat gegen über den bisherigen Arbeiten in planarer Meßgeometrie den Vorteil, daß das Substrat, die Verarmungszone des Schottky-Kontaktes und die eigentliche Grenzfläche für die Messungen zugänglich sind. Die Auswahl des Systems Au auf GaAs(110) wurde einerseits motiviert durch die vorteilhaften Spalteigenschaften der III-V-Halbleiter, andererseits durch das Fehlen von Bandverbiegung an den freien, ungepinnten (110)-Oberflächen, die bereits in vielen Arbeiten zur Physik des Schottky-Kontaktes als Modellsystem untersucht wurden. Wir haben gezeigt, daß durch Präparation mit cleaved edge overgrowth auf atomarer Skala wohldefinierte Proben hergestellt werden können, die —obgleich technologisch weniger bedeutend— gut für die Untersuchung grundlegender Mechanismen an Metall-Halbleiter-Kontakten geeignet sind. Mithilfe von spannungsabhängigen Topographie-Messungen konnten wir die Grenzfläche mikroskopisch charakterisieren. Im Bereich der Grenzfläche finden wir eine Defektdichte von weniger als 3 × 1013cm−2. Das Resultat dieser konservativen Abschätzung ist zu klein, um das Fermi level pinning am Schottky- Kontakt erklären zu können. Diese Ergebnisse scheinen im Widerspruch zu einigen früheren Arbeiten zu stehen, in denen eine deutlich gestörte Grenzfläche mit hoher Defektdichte für ähnlich präparierte Systeme beobachtet wurde.
Author : Robert F. Pierret
Publisher : Pearson Educacion
ISBN 13 : 9780131784598
Total Pages : 792 pages
Book Rating : 4.7/5 (845 download)
Download or read book Semiconductor Device Fundamentals written by Robert F. Pierret and published by Pearson Educacion. This book was released on 1996 with total page 792 pages. Available in PDF, EPUB and Kindle. Book excerpt: Although roughly a half-century old, the field of study associated with semiconductor devices continues to be dynamic and exciting. New and improved devices are being developed at an almost frantic pace. While the number of devices in complex integrated circuits increases and the size of chips decreases, semiconductor properties are now being engineered to fit design specifications. Semiconductor Device Fundamentals serves as an excellent introduction to this fascinating field. Based in part on the Modular Series on Solid State Devices, this textbook explains the basic terminology, models, properties, and concepts associated with semiconductors and semiconductor devices. The book provides detailed insight into the internal workings of building block device structures and systematically develops the analytical tools needed to solve practical device problems.
Author : Inder P. Batra
Publisher : Springer Science & Business Media
ISBN 13 : 1461307953
Total Pages : 501 pages
Book Rating : 4.4/5 (613 download)
Download or read book Metallization and Metal-Semiconductor Interfaces written by Inder P. Batra and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 501 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book represents the work presented at a NATO Advanced Research Workshop on "Metallization and Metal-Semiconductor Interfaces", held at the Technical University of Munich, Garching, W. Germany from 22-26 August 1988. The major focus of the workshop was to evaluate critically the progress made in the area of metal-semiconductor interfaces. The underlying theme was the mechanism of Schottky barrier formation and a serious as sessment of the various models. A significant fraction of the workshop time was also spent in discussing the interaction of alkali metals with semiconductors. Alkali metals on semi conductors form ordered overlayers and the resulting system often exhibits one-dimensional metallic properties. The nature of their interaction has introduced new and exciting com plexities and this was pursued at length during the lively discussions at the workshop. A half a day was devoted to Scanning Tunneling Microscopy, the emphasis being on its utility in providing structural and electronic character of low-coverage regime. The book should pro vide readers with the most current status of the research activity in the general area of metal-semiconductor interfaces at an international level. It should also serve as an excellent introduction to the field, since sufficient review type of material has also been included The workshop organizers, Dr. I. P. Batra (Director), mM Almaden Research Center, San Jose, Prof. S. Ciraci, Bilkent University, Ankara, Prof. C. Y. Pong, University of California, Davis, Prof. Dr. F. Koch (Local Chairman), Technical University Munich, Garching, Dr. H.
Author : Sorab K. Ghandhi
Publisher : John Wiley & Sons
ISBN 13 : 0471580058
Total Pages : 870 pages
Book Rating : 4.4/5 (715 download)
Download or read book VLSI Fabrication Principles written by Sorab K. Ghandhi and published by John Wiley & Sons. This book was released on 1994-03-31 with total page 870 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fully updated with the latest technologies, this edition covers thefundamental principles underlying fabrication processes forsemiconductor devices along with integrated circuits made fromsilicon and gallium arsenide. Stresses fabrication criteria forsuch circuits as CMOS, bipolar, MOS, FET, etc. These diversetechnologies are introduced separately and then consolidated intocomplete circuits. An Instructor's Manual presenting detailed solutions to all theproblems in the book is available from the Wiley editorialdepartment.
Author :
Publisher :
ISBN 13 :
Total Pages : 800 pages
Book Rating : 4.F/5 ( download)
Download or read book Dissertation Abstracts International written by and published by . This book was released on 1996 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Long-Ching Wang
Publisher :
ISBN 13 :
Total Pages : 340 pages
Book Rating : 4.:/5 (318 download)
Download or read book The Development and Application of Nonspiking Ohmic Contacts Formed by Solid-phase Reactions to N-type Gallium Arsenide written by Long-Ching Wang and published by . This book was released on 1991 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt:
