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Materials Growth And Optimization Of Inp Ingaas And Inalas Ingaas Heterojunction Bipolar Transistor Structures By Mocvd Utilizing Carbon And Zinc Base Layer Dopants
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Book Synopsis Materials Growth and Optimization of InP/InGaAs and InAlAs/InGaAs Heterojunction Bipolar Transistor Structures by MOCVD Utilizing Carbon and Zinc Base Layer Dopants by :
Download or read book Materials Growth and Optimization of InP/InGaAs and InAlAs/InGaAs Heterojunction Bipolar Transistor Structures by MOCVD Utilizing Carbon and Zinc Base Layer Dopants written by and published by . This book was released on 1996 with total page 3 pages. Available in PDF, EPUB and Kindle. Book excerpt: The work in this Phase I program will examine the effect of base dopant species and various structural modifications on the material properties, device performance, and thermal stability of InP based HBTs. Pertinent variations to be implemented in the epitaxial structure include: (1) Zn or C doping in the InGaAs base layers, (2) InP or InAlAs as the emitter material, (3) single or double heterostructure configurations, and (4) the presence or absence of undoped InGaAs setback layer(s). The effect of the various modifications on pertinent material properties, overall device performance, and resistance to thermal degradation will be characterized and the approach(es) suitable for future optimization and accelerated life testing will be identified.
Book Synopsis Carbon-doped InP/InGaAs Heterojunction Bipolar Transistors for High Speed Applications by : Russell C. Gee
Download or read book Carbon-doped InP/InGaAs Heterojunction Bipolar Transistors for High Speed Applications written by Russell C. Gee and published by . This book was released on 1993 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2616 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Carbon Doped InP/InGaAs Heterojunction Bipolar Transistors Grown By MOCVD. by :
Download or read book Carbon Doped InP/InGaAs Heterojunction Bipolar Transistors Grown By MOCVD. written by and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: InGaAs/InP heterojunction bipolar transistors grown in a multi-wafer metal-organic chemicalvapor deposition system will be demonstrated. Excellent large and small area DC and RF results are obtained for single and double heterojunction structures. The large area DC current gain was increased by a factor of 3 at a given base sheet resistance via growth optimization. DHBT devices exhibit a current gain cut-off frequency of ft ~ 125 GHz and a unilateral gain cut-off frequency of fmax ~ 125 GHz.
Book Synopsis Influence of Carbon Sources on Thermal Stability of C-doped Base InP/InGaAs Heterojunction Bipolar Transistors by :
Download or read book Influence of Carbon Sources on Thermal Stability of C-doped Base InP/InGaAs Heterojunction Bipolar Transistors written by and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: We report effects of annealing on InP/InGaAs heterojunction bipolar transistors (HBTs) having an InGaAs base layer C-doped using CBr 4 or CBrCl 3 as the C source. It was found that ramp thermal annealing (RTA) after growth removes H atoms, which are located in C-dopedd InGaAs base layer and deactivate C acceptors, resulting in a decrease of base sheet resistance. An RTA simultaneously can deteriorate the C-doped base layer. An evaluation of base sheet resistance and dc current gain indicates that InP/InGaAs HBTs with C-doped InGaAs grown using CBrCl 3 are more stable in terms of thermal stress than those grown using CBr 4.
Book Synopsis Growth and Characterization of High-speed C-doped Base InP/InGaAs Heterojunction Bipolar Transistors Using Metalorganic Molecular Beam Epitaxy by : Sunil Thomas
Download or read book Growth and Characterization of High-speed C-doped Base InP/InGaAs Heterojunction Bipolar Transistors Using Metalorganic Molecular Beam Epitaxy written by Sunil Thomas and published by . This book was released on 1998 with total page 174 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis InP/InGaAs Heterojunction Bipolar Transistors Grown on Ge/P Co-implanted InP Substrates by Metal-Organic Molecular Bean Epitaxy by : W. J. Sung
Download or read book InP/InGaAs Heterojunction Bipolar Transistors Grown on Ge/P Co-implanted InP Substrates by Metal-Organic Molecular Bean Epitaxy written by W. J. Sung and published by . This book was released on 2002 with total page 3 pages. Available in PDF, EPUB and Kindle. Book excerpt: InP/InGaAs Heterojunction Bipolar Transistors (HBTs) have demonstrated excellent high- frequency performance 1-4 and are widely used for optical fiber transmission 5-7. However; the current mesa HBT structure utilizes a very thick, highly doped n+InGaAs layer for the subcollector contact. This added mesa height makes multilevel interconnection processes more difficult, which impedes the capability of fabricating compact integrated circuits. In addition, rip has a much higher thermal conductivity than InGaAs, so heat dissipation may be a problem for densely packed circuits with the above structure. This paper reports on InP/InGaAs HBTs grown on Ge/P co-implanted substrates by Metal-Organic Molecular Beam Epitaxy (MOMBE). This embedded subcollector HBT structure offers several advantages for the fabrication of large-scale integrated circuits on InP substrates.
Book Synopsis Development of a Fabrication Process for InP/InGaAs Based Heterojunction Bipolar Transistors by : Matthew Jon Soucek
Download or read book Development of a Fabrication Process for InP/InGaAs Based Heterojunction Bipolar Transistors written by Matthew Jon Soucek and published by . This book was released on 1994 with total page 364 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Fabrication of InGaAs/InAlAs/InP Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy by : Wai Lee
Download or read book The Fabrication of InGaAs/InAlAs/InP Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy written by Wai Lee and published by . This book was released on 1986 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fabrication and Characterisation of InP/InGaAs Heterojunction Bipolar Transistors by : Daniel Timothy Pillow
Download or read book Fabrication and Characterisation of InP/InGaAs Heterojunction Bipolar Transistors written by Daniel Timothy Pillow and published by . This book was released on 2013 with total page 65 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Chemical Beam Epitaxial Regrowth, Etching, and Doping of III-V Compounds Using Novel Gas Sources for Applications of Heterojunction Bipolar Transistors by : Nein-Yi Li
Download or read book Chemical Beam Epitaxial Regrowth, Etching, and Doping of III-V Compounds Using Novel Gas Sources for Applications of Heterojunction Bipolar Transistors written by Nein-Yi Li and published by . This book was released on 1997 with total page 446 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Carbon Doping and Hydrogen Passivation in InGaAs and InP/InGaAs Heterojunction Bipolar Transistors Grown by Metalorganic Chemical Vapor Deposition by : Stephen Andrew Stockman
Download or read book Carbon Doping and Hydrogen Passivation in InGaAs and InP/InGaAs Heterojunction Bipolar Transistors Grown by Metalorganic Chemical Vapor Deposition written by Stephen Andrew Stockman and published by . This book was released on 1993 with total page 194 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis International aerospace abstracts by :
Download or read book International aerospace abstracts written by and published by . This book was released on 1993 with total page 1060 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis InP/InGaAs Heterojunction Bipolar Transistors with a Zinc Diffused Base Contact by : Peter Schuitemaker
Download or read book InP/InGaAs Heterojunction Bipolar Transistors with a Zinc Diffused Base Contact written by Peter Schuitemaker and published by . This book was released on 1992 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electrical & Electronics Abstracts by :
Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 2304 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Design Considerations for 400 GHz InP/InGaAs Heterojunction Bipolar Transistors by : James Chingwei Li
Download or read book Design Considerations for 400 GHz InP/InGaAs Heterojunction Bipolar Transistors written by James Chingwei Li and published by . This book was released on 2006 with total page 231 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis InP/InGaAs Heterojunction Bipolar Transistors and Field Effect Transistors Grown by Gas-source Molecular Beam Epitaxy by : Hao-Chung Kuo
Download or read book InP/InGaAs Heterojunction Bipolar Transistors and Field Effect Transistors Grown by Gas-source Molecular Beam Epitaxy written by Hao-Chung Kuo and published by . This book was released on 1999 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt:
