Material and Device Studies of Heteroepitaxial GaAs Films on Si Substrates by Molecular Beam Epitaxy

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ISBN 13 :
Total Pages : 526 pages
Book Rating : 4.:/5 (7 download)

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Book Synopsis Material and Device Studies of Heteroepitaxial GaAs Films on Si Substrates by Molecular Beam Epitaxy by : Henry Po-Heng Lee

Download or read book Material and Device Studies of Heteroepitaxial GaAs Films on Si Substrates by Molecular Beam Epitaxy written by Henry Po-Heng Lee and published by . This book was released on 1989 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Journal of Research of the National Institute of Standards and Technology

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ISBN 13 :
Total Pages : 904 pages
Book Rating : 4.E/5 ( download)

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Book Synopsis Journal of Research of the National Institute of Standards and Technology by :

Download or read book Journal of Research of the National Institute of Standards and Technology written by and published by . This book was released on 1994 with total page 904 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reports NIST research and development in the physical and engineering sciences in which the Institute is active. These include physics, chemistry, engineering, mathematics, and computer sciences. Emphasis on measurement methodology and the basic technology underlying standardization.

Energy Research Abstracts

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Publisher :
ISBN 13 :
Total Pages : 946 pages
Book Rating : 4.:/5 (319 download)

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Book Synopsis Energy Research Abstracts by :

Download or read book Energy Research Abstracts written by and published by . This book was released on 1990 with total page 946 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Materials for Optoelectronic Devices, OEICs and Photonics

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Publisher : Elsevier
ISBN 13 : 0444596755
Total Pages : 542 pages
Book Rating : 4.4/5 (445 download)

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Book Synopsis Materials for Optoelectronic Devices, OEICs and Photonics by : H. Schlötterer

Download or read book Materials for Optoelectronic Devices, OEICs and Photonics written by H. Schlötterer and published by Elsevier. This book was released on 1991-10-08 with total page 542 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aim of the contributions in this volume is to give a current overview on the basic properties and applications of semiconductor and nonlinear optical materials for optoelectronics and integrated optics. They provide a cross-linkage between different materials (III-V, II-VI, Si-Ge, glasses, etc.), various sample dimensions (from bulk crystals to quantum dots), and a range of techniques for growth (LPE to MOMBE) and for processing (from surface passivation to ion beams). Major growth techniques and materials are discussed, including the sophisticated technologies required to exploit the exciting properties of low dimensional semiconductors. These proceedings will prove an invaluable guide to the current state of optoelectronic and nonlinear optical materials development, as well as indicating trends and also future markets for optoelectronic devices.

Silicon Molecular Beam Epitaxy

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Publisher : CRC Press
ISBN 13 : 1351085077
Total Pages : 306 pages
Book Rating : 4.3/5 (51 download)

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Book Synopsis Silicon Molecular Beam Epitaxy by : E. Kasper

Download or read book Silicon Molecular Beam Epitaxy written by E. Kasper and published by CRC Press. This book was released on 2018-05-04 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.

Heteroepitaxy on Silicon: Volume 67

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ISBN 13 :
Total Pages : 304 pages
Book Rating : 4.:/5 (45 download)

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Book Synopsis Heteroepitaxy on Silicon: Volume 67 by : J. C. C. Fan

Download or read book Heteroepitaxy on Silicon: Volume 67 written by J. C. C. Fan and published by . This book was released on 1986-10-20 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Scientific and Technical Aerospace Reports

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ISBN 13 :
Total Pages : 702 pages
Book Rating : 4.:/5 (31 download)

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Book Synopsis Scientific and Technical Aerospace Reports by :

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:

High-Speed Electronics

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Publisher : Springer Science & Business Media
ISBN 13 : 3642829791
Total Pages : 239 pages
Book Rating : 4.6/5 (428 download)

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Book Synopsis High-Speed Electronics by : Bengt Källbäck

Download or read book High-Speed Electronics written by Bengt Källbäck and published by Springer Science & Business Media. This book was released on 2013-03-08 with total page 239 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the past, a number of Satellite Conferences have been held in con nection with the International Conference on Physics of Semiconductors, covering selected fields of interest. In 1986, when the main conference was held in Stockholm, Sweden, new. phenomena had to be discussed: super lattices, hot 'electron phenomena and new device structures for high-speed applications. The aim was to select topics which would be of interest to physicists as well as to electronics engineers. Therefore a Satellite Con ference on H!gh-Speed Electronics, Basic Physical Phenomena and Device Principles, was arranged at Saltjobaden, a coastal resort near Stockholm. An organizing committee was established after the first suggestion made by Professor Grimmeiss from the University of Lund, Sweden, and some preliminary discussions on the Conference format. A Program Committee was established to be responsible for the further selection of the invited talks, the regular papers and poster presentation. The aim was to have a broad spectrum of contributions to attract physicists as well as device oriented engineers and to stimulate discussions among the participants. These Proceedings contain all oral and poster presentations, with em phasis on the invited talks, which give a competent overview of the field. The fast publication by Springer-Verlag has permitted the presentation of an up-to-date survey of the principles of high-speed electronics. Incorpo ration in the Springer Series in Electronics and Photonics will enable the book to be distributed worldwide and to reach all interested scientists.

Molecular Beam Epitaxy

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Publisher : Elsevier
ISBN 13 : 0128121378
Total Pages : 790 pages
Book Rating : 4.1/5 (281 download)

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Book Synopsis Molecular Beam Epitaxy by : Mohamed Henini

Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community

Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices : (December 14 - 18, 1999) [New Delhi]. 2(2000)

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Publisher : Allied Publishers
ISBN 13 : 9788170239987
Total Pages : 800 pages
Book Rating : 4.2/5 (399 download)

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Book Synopsis Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices : (December 14 - 18, 1999) [New Delhi]. 2(2000) by :

Download or read book Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices : (December 14 - 18, 1999) [New Delhi]. 2(2000) written by and published by Allied Publishers. This book was released on 2000 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Materials Science of Thin Films

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Publisher : Elsevier
ISBN 13 : 0080491782
Total Pages : 817 pages
Book Rating : 4.0/5 (84 download)

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Book Synopsis Materials Science of Thin Films by : Milton Ohring

Download or read book Materials Science of Thin Films written by Milton Ohring and published by Elsevier. This book was released on 2001-10-20 with total page 817 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book that can be considered a textbook on thin film science, complete with exercises at the end of each chapter. Ohring has contributed many highly regarded reference books to the AP list, including Reliability and Failure of Electronic Materials and the Engineering Science of Thin Films. The knowledge base is intended for science and engineering students in advanced undergraduate or first-year graduate level courses on thin films and scientists and engineers who are entering or require an overview of the field. Since 1992, when the book was first published, the field of thin films has expanded tremendously, especially with regard to technological applications. The second edition will bring the book up-to-date with regard to these advances. Most chapters have been greatly updated, and several new chapters have been added.

Heteroepitaxy of Semiconductors

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Publisher : CRC Press
ISBN 13 : 135183780X
Total Pages : 388 pages
Book Rating : 4.3/5 (518 download)

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Book Synopsis Heteroepitaxy of Semiconductors by : John E. Ayers

Download or read book Heteroepitaxy of Semiconductors written by John E. Ayers and published by CRC Press. This book was released on 2018-10-08 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt: Heteroepitaxy has evolved rapidly in recent years. With each new wave of material/substrate combinations, our understanding of how to control crystal growth becomes more refined. Most books on the subject focus on a specific material or material family, narrowly explaining the processes and techniques appropriate for each. Surveying the principles common to all types of semiconductor materials, Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization is the first comprehensive, fundamental introduction to the field. This book reflects our current understanding of nucleation, growth modes, relaxation of strained layers, and dislocation dynamics without emphasizing any particular material. Following an overview of the properties of semiconductors, the author introduces the important heteroepitaxial growth methods and provides a survey of semiconductor crystal surfaces, their structures, and nucleation. With this foundation, the book provides in-depth descriptions of mismatched heteroepitaxy and lattice strain relaxation, various characterization tools used to monitor and evaluate the growth process, and finally, defect engineering approaches. Numerous examples highlight the concepts while extensive micrographs, schematics of experimental setups, and graphs illustrate the discussion. Serving as a solid starting point for this rapidly evolving area, Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization makes the principles of heteroepitaxy easily accessible to anyone preparing to enter the field.

Heteroepitaxy on Silicon: Volume 116

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ISBN 13 :
Total Pages : 578 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Heteroepitaxy on Silicon: Volume 116 by : H. K. Choi

Download or read book Heteroepitaxy on Silicon: Volume 116 written by H. K. Choi and published by . This book was released on 1988 with total page 578 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Heterostructures on Silicon: One Step Further with Silicon

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Publisher : Springer Science & Business Media
ISBN 13 : 9400909136
Total Pages : 361 pages
Book Rating : 4.4/5 (9 download)

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Book Synopsis Heterostructures on Silicon: One Step Further with Silicon by : Y. Nissim

Download or read book Heterostructures on Silicon: One Step Further with Silicon written by Y. Nissim and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 361 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the field of logic circuits in microelectronics, the leadership of silicon is now strongly established due to the achievement of its technology. Near unity yield of one million transistor chips on very large wafers (6 inches today, 8 inches tomorrow) are currently accomplished in industry. The superiority of silicon over other material can be summarized as follow: - The Si/Si0 interface is the most perfect passivating interface ever 2 obtained (less than 10" e y-I cm2 interface state density) - Silicon has a large thermal conductivity so that large crystals can be pulled. - Silicon is a hard material so that large wafers can be handled safely. - Silicon is thermally stable up to 1100°C so that numerous metallurgical operations (oxydation, diffusion, annealing ... ) can be achieved safely. - There is profusion of silicon on earth so that the base silicon wafer is cheap. Unfortunatly, there are fundamental limits that cannot be overcome in silicon due to material properties: laser action, infra-red detection, high mobility for instance. The development of new technologies of deposition and growth has opened new possibilities for silicon based structures. The well known properties of silicon can now be extended and properly used in mixed structures for areas such as opto-electronics, high-speed devices. This has been pioneered by the integration of a GaAs light emitting diode on a silicon based structure by an MIT group in 1985.

Epitaxial Heterostructures: Volume 198

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Publisher : Mrs Proceedings
ISBN 13 :
Total Pages : 678 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Epitaxial Heterostructures: Volume 198 by : Don W. Shaw

Download or read book Epitaxial Heterostructures: Volume 198 written by Don W. Shaw and published by Mrs Proceedings. This book was released on 1990-11-20 with total page 678 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Metalorganic Vapor Phase Epitaxy (MOVPE)

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Publisher : John Wiley & Sons
ISBN 13 : 111931304X
Total Pages : 586 pages
Book Rating : 4.1/5 (193 download)

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Book Synopsis Metalorganic Vapor Phase Epitaxy (MOVPE) by : Stuart Irvine

Download or read book Metalorganic Vapor Phase Epitaxy (MOVPE) written by Stuart Irvine and published by John Wiley & Sons. This book was released on 2019-08-27 with total page 586 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).

Chemical Abstracts

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ISBN 13 :
Total Pages : 2668 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Chemical Abstracts by :

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2668 pages. Available in PDF, EPUB and Kindle. Book excerpt: