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Low Temperature Synthesis And Characterization Of Low Pressure Chemical Vapor Depostion Silicon Dioxide Films Using Diethylsilane
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Book Synopsis Synthesis and Characterization of Silicon Dioxide Thin Films by Low Pressure Chemical Vapor Deposition Using Ditertiarybutylsilane and Oxygen by : Sung-Jun Lee
Download or read book Synthesis and Characterization of Silicon Dioxide Thin Films by Low Pressure Chemical Vapor Deposition Using Ditertiarybutylsilane and Oxygen written by Sung-Jun Lee and published by . This book was released on 1996 with total page 104 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Synthesis and Characterization of Silicon Dioxide Thin Films by Low Pressure Chemical Vapor Deposition by : Sutham Niyomwas
Download or read book Synthesis and Characterization of Silicon Dioxide Thin Films by Low Pressure Chemical Vapor Deposition written by Sutham Niyomwas and published by . This book was released on 1997 with total page 86 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Low Temperature Synthesis and Characterization of Low Pressure Chemical Vapor Depostion Silicon Dioxide Films Using Diethylsilane by : Chakravarthy Srinivasa Gorthy
Download or read book Low Temperature Synthesis and Characterization of Low Pressure Chemical Vapor Depostion Silicon Dioxide Films Using Diethylsilane written by Chakravarthy Srinivasa Gorthy and published by . This book was released on 1992 with total page 114 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Formation of Low Temperature Silicon Dioxide Films Using Chemical Vapor Deposition by : Hsiao-Hui Chen
Download or read book Formation of Low Temperature Silicon Dioxide Films Using Chemical Vapor Deposition written by Hsiao-Hui Chen and published by . This book was released on 1991 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Low Temperature Oxide (LTO) thin films were prepared using a Low Pressure Chemical Vapor Deposition process. The process was characterized by applying traditional statistical studies and response surface technique. The uniformities within wafer and from wafer to wafer were examined by determining the mean and the standard deviation of films thicknesses. Response surface methodology was employed to determine the optimum process conditions. Time, temperature and gas flow ratio were used as the experimental factors. Index of refraction and deposition rate were used as the experimental responses. Additionally, etch rate, density, dielectric constant and infrared (IR) spectra were found for the silicon dioxide films prepared at the determined optimum condition. The IR spectra were obtained by employing Fourier Transform Infrared Spectroscopy (FTIR). The average deposition rate was found to be 46 A per minute and the average index of refraction was 1.44. The calculated density, activation energy, etch rate, dielectric constant and dielectric strength agreed with reported values. A double metal test run was performed using LTO oxide. The results indicated that the recommended baseline LTO process is suitable for multilayer metallization processes."--Abstract.
Book Synopsis Low Temperature Atmospheric Pressure Chemical Vapor Deposition of Group 14 Oxide Films by :
Download or read book Low Temperature Atmospheric Pressure Chemical Vapor Deposition of Group 14 Oxide Films written by and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Depositions of high quality SiO[sub 2] and SnO[sub 2] films from the reaction of homoleptic amido precursors M(NMe[sub 2])4 (M = Si, Sn) and oxygen were carried out in an atmospheric pressure chemical vapor deposition r. The films were deposited on silicon, glass and quartz substrates at temperatures of 250 to 450C. The silicon dioxide films are stoichiometric (O/Si = 2.0) with less than 0.2 atom % C and 0.3 atom % N and have hydrogen contents of 9 [plus-minus] 5 atom %. They are deposited with growth rates from 380 to 900 [angstrom]/min. The refractive indexes of the SiO[sub 2] films are 1.46, and infrared spectra show a possible Si-OH peak at 950 cm[sup [minus]1]. X-Ray diffraction studies reveal that the SiO[sub 2] film deposited at 350C is amorphous. The tin oxide films are stoichiometric (O/Sn = 2.0) and contain less than 0.8 atom % carbon, and 0.3 atom % N. No hydrogen was detected by elastic recoil spectroscopy. The band gap for the SnO[sub 2] films, as estimated from transmission spectra, is 3.9 eV. The resistivities of the tin oxide films are in the range 10[sup [minus]2] to 10[sup [minus]3] [Omega]cm and do not vary significantly with deposition temperature. The tin oxide film deposited at 350C is cassitterite with some (101) orientation.
Book Synopsis Low Pressure Chemical Vapor Deposition (LPCVD) of Silicon Dioxide at High Temperatures by : Ara Philipossian
Download or read book Low Pressure Chemical Vapor Deposition (LPCVD) of Silicon Dioxide at High Temperatures written by Ara Philipossian and published by . This book was released on 1985 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Chemical Vapor Deposition for Microelectronics by : Arthur Sherman
Download or read book Chemical Vapor Deposition for Microelectronics written by Arthur Sherman and published by William Andrew Inc.. This book was released on 1987 with total page 215 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents an extensive, comprehensive study of chemical vapor deposition (CVD). Understanding CVD requires knowledge of fluid mechanics, plasma physics, chemical thermodynamics and kinetics, as well as homogenous and heterogeneous chemical reactions. This text presents these aspects of CVD in an integrated fashion, and also reviews films for use in integrated circuit technology.
Book Synopsis Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Other Emerging Diele[c]trics VIII by : Ram Ekwal Sah
Download or read book Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Other Emerging Diele[c]trics VIII written by Ram Ekwal Sah and published by The Electrochemical Society. This book was released on 2005 with total page 606 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Low Pressure Chemical Vapor Deposition of Silicon Dioxide and Phosphosilicate Glass Thin Films by : Vijayalakshmi Venkatesan
Download or read book Low Pressure Chemical Vapor Deposition of Silicon Dioxide and Phosphosilicate Glass Thin Films written by Vijayalakshmi Venkatesan and published by . This book was released on 1996 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :Electrochemical Society. Meeting Publisher :The Electrochemical Society ISBN 13 :9781566773478 Total Pages :652 pages Book Rating :4.7/5 (734 download)
Book Synopsis Silicon Nitride and Silicon Dioxide Thin Insulating Films VII by : Electrochemical Society. Meeting
Download or read book Silicon Nitride and Silicon Dioxide Thin Insulating Films VII written by Electrochemical Society. Meeting and published by The Electrochemical Society. This book was released on 2003 with total page 652 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Silicon Nitride and Silicon Dioxide Thin Insulating Films by :
Download or read book Silicon Nitride and Silicon Dioxide Thin Insulating Films written by and published by . This book was released on 1999 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Synthesis and Characterization of Silicon Dioxide Thin Films by Plasma Enhances Chemical Vapor Deposition from Diethylsilane and Nitrous Oxide by : Lan Chen
Download or read book Synthesis and Characterization of Silicon Dioxide Thin Films by Plasma Enhances Chemical Vapor Deposition from Diethylsilane and Nitrous Oxide written by Lan Chen and published by . This book was released on 1995 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Silicon Dioxide Deposition at 100 C Using Vacuum Ultraviolet Light by : J. Marks
Download or read book Silicon Dioxide Deposition at 100 C Using Vacuum Ultraviolet Light written by J. Marks and published by . This book was released on 1988 with total page 12 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin films of silicon dioxide are used extensively as insulators in the fabrication of many semiconductor devices. Silicon dioxide films deposited by chemical vapor deposition typically require temperatures near 800 C. However, some processes, such as the fabrication of devices with multilevel aluminum interconnects, require deposition temperatures below 350 C. Several techniques that have been developed for low-temperature deposition of silicon dioxide include plasma-assisted deposition, low-pressure chemical vapor deposition, and photo-assisted chemical vapor deposition. Some photochemical deposition reaction use Hg vapor as a photochemical catalyst to decompose nitrous oxide in the pressure of silane. Films deposited with these reactions have been found to have adhesion problems, and tend to be in completely oxidized. Several other deposition reactions using photodissociation of molecular oxygen or disilane have been reported. (jes).
Book Synopsis Silicon Carbide Thin Films Via Low Pressure Chemical Vapor Deposition for Micro- and Nano-electromechanical Systems by : Christopher Stephen Roper
Download or read book Silicon Carbide Thin Films Via Low Pressure Chemical Vapor Deposition for Micro- and Nano-electromechanical Systems written by Christopher Stephen Roper and published by . This book was released on 2007 with total page 390 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electrical evaluation of the process dependence of polysilicon and silicon dioxide films deposited in the low pressure chemical vapor deposition process by : Bikas Maiti
Download or read book Electrical evaluation of the process dependence of polysilicon and silicon dioxide films deposited in the low pressure chemical vapor deposition process written by Bikas Maiti and published by . This book was released on 1990 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Low Pressure Chemical Vapor Deposition of Silicon Dioxide from Tetraethylorthosilicate by : Frank Allen Shemansky
Download or read book Low Pressure Chemical Vapor Deposition of Silicon Dioxide from Tetraethylorthosilicate written by Frank Allen Shemansky and published by . This book was released on 1991 with total page 254 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Low Temperature Alkoxide Hydrolysis for the Chemical Vapor Deposition of Porous Silicon Dioxide Films by : Srivijayaramachandran Sankararaman
Download or read book Low Temperature Alkoxide Hydrolysis for the Chemical Vapor Deposition of Porous Silicon Dioxide Films written by Srivijayaramachandran Sankararaman and published by . This book was released on 1998 with total page 200 pages. Available in PDF, EPUB and Kindle. Book excerpt: