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Author : Yun-Li Li
Publisher :
ISBN 13 :
Total Pages : 114 pages
Book Rating : 4.:/5 (477 download)
Download or read book Low-resistance Ohmic Contacts to P-type GaN and P-type AlGaN/GaN Superlattices written by Yun-Li Li and published by . This book was released on 2000 with total page 114 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 14 pages
Book Rating : 4.:/5 (55 download)
Download or read book Processing for Highly Efficient AlGaN/GaN Emitters written by and published by . This book was released on 2009 with total page 14 pages. Available in PDF, EPUB and Kindle. Book excerpt: The fabrication of high-quality ohmic contacts on n- and p-type (Al, In)GaN is essential for improving the performance of optoelectronic devices, such as blue light emitting diodes, metal-semiconductor field effect transistors, HEMTs, and laser diodes. In particular, to realize solid-state UV emitters for chembioagent detection and general lighting, the formation of reliable ohmic contact systems for both n- and p-AlGaN with relatively high Al contents are indispensable. In conjunction with efforts to achieve low-resistance ohmic contacts to GaN using low work-function metal contacts, surface treatment techniques have also been proposed as an additional route to improve ohmic contacts, as the nature of the GaN surface is crucial to the formation of high quality ohmic contacts. gallium oxide is formed on GaN and AlGaN surfaces when epilayers are exposed to ambient atmosphere. This native oxide acts as a thin insulating layer over the conducting epilayer. Metal contacts deposited on such semiconductors with surface oxides form a metal-insulator semiconductor structure instead of a metal-semiconductor junction. Thus, it is imperative to remove the native oxide prior to metal deposition on the semiconductor to form low resistance ohmic contacts. Apart from the removal of native oxides prior to metallization, plasma treatment techniques have been described for improving ohmic performance of contacts on GaN-based semiconductors. We investigated the effects of SiCl4 plasma treatment and subsequent cleaning in BOE, HCl, and NH4OH solutions on n-GaN and n- AlGaN surfaces using XPS and AES. The efficacy of the different surface treatment schemes were compared by monitoring the oxygen concentrations on the surface of the GaN and AlxGa1-xN materials.
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Author : Hsun Chih Kuo
Publisher :
ISBN 13 :
Total Pages : 168 pages
Book Rating : 4.:/5 (472 download)
Download or read book Low Resistance Ohmic Contacts to P-type GaN on Semipolar [11 - 22] and Nonpolar [10 - 10] written by Hsun Chih Kuo and published by . This book was released on 2009 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : E. Fred Schubert
Publisher : Cambridge University Press
ISBN 13 : 1139455222
Total Pages : 433 pages
Book Rating : 4.1/5 (394 download)
Download or read book Light-Emitting Diodes written by E. Fred Schubert and published by Cambridge University Press. This book was released on 2006-06-08 with total page 433 pages. Available in PDF, EPUB and Kindle. Book excerpt: Revised and fully updated, the second edition of this graduate textbook offers a comprehensive explanation of the technology and physics of LEDs such as infrared, visible-spectrum, ultraviolet, and white LEDs made from III-V semiconductors. Elementary properties such as electrical and optical characteristics are reviewed, followed by the analysis of advanced device structures. With nine additional chapters, the treatment of LEDs has been vastly expanded, including new material on device packaging, reflectors, UV LEDs, III-V nitride materials, solid-state sources for illumination applications, and junction temperature. Radiative and non-radiative recombination dynamics, methods for improving light extraction, high-efficiency and high-power device designs, white-light emitters with wavelength-converting phosphor materials, optical reflectors, and spontaneous recombination in resonant-cavity structures are discussed in detail. With exercises, solutions, and illustrative examples, this textbook will be of interest to scientists and engineers working on LEDs and graduate students in electrical engineering, applied physics, and materials science.
Author : E. Fred Schubert
Publisher : E. Fred Schubert
ISBN 13 : 0986382612
Total Pages : 431 pages
Book Rating : 4.9/5 (863 download)
Download or read book Light-Emitting Diodes (2nd Edition, 2006) written by E. Fred Schubert and published by E. Fred Schubert. This book was released on 2006-01-01 with total page 431 pages. Available in PDF, EPUB and Kindle. Book excerpt: Revised and fully updated, the Second Edition of this textbook offers a comprehensive explanation of the technology and physics of light-emitting diodes (LEDs) such as infrared, visible-spectrum, ultraviolet, and white LEDs made from III–V semiconductors. The elementary properties of LEDs such as electrical and optical characteristics are reviewed, followed by the analysis of advanced device structures. With nine additional chapters, the treatment of LEDs has been vastly expanded, including new material on device packaging, reflectors, UV LEDs, III–V nitride materials, solid-state sources for illumination applications, and junction temperature. Radiative and non-radiative recombination dynamics, methods for improving light extraction, high-efficiency and high-power device designs, white-light emitters with wavelength-converting phosphor materials, optical reflectors, and spontaneous recombination in resonant-cavity structures, are discussed in detail. Fields related to solid-state lighting such as human vision, photometry, colorimetry, and color rendering are covered beyond the introductory level provided in the first edition. The applications of infrared and visible spectrum LEDs in silica fiber, plastic fiber, and free-space communication are also discussed. Semiconductor material data, device design data, and analytic formulae governing LED operation are provided. With exercises, solutions and illustrative examples, this textbook will be of interest to scientists and engineers working on LEDs, and to graduate students in electrical engineering, applied physics, and materials science.
Author : Douglas B. Ingerly
Publisher :
ISBN 13 :
Total Pages : 294 pages
Book Rating : 4.:/5 (89 download)
Download or read book Ohmic Contacts to GaN written by Douglas B. Ingerly and published by . This book was released on 2000 with total page 294 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Wengang (Wayne) Bi
Publisher : CRC Press
ISBN 13 : 1351648055
Total Pages : 775 pages
Book Rating : 4.3/5 (516 download)
Download or read book Handbook of GaN Semiconductor Materials and Devices written by Wengang (Wayne) Bi and published by CRC Press. This book was released on 2017-10-20 with total page 775 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.
Author : William Paul Risk
Publisher : Cambridge University Press
ISBN 13 : 9780521521031
Total Pages : 540 pages
Book Rating : 4.5/5 (21 download)
Download or read book Compact Blue-Green Lasers written by William Paul Risk and published by Cambridge University Press. This book was released on 2003-01-09 with total page 540 pages. Available in PDF, EPUB and Kindle. Book excerpt: William Risk, Timothy Gosnell and Arto Nurmikko have brought together their diverse expertise from industry and academia to write the first fully comprehensive book on the generation and application of blue-green lasers. This volume describes the theory and practical implementation of three techniques for the generation of blue-green light: nonlinear frequency conversion of infrared lasers, upconversion lasers, and wide bandgap semiconductor diode lasers. In addition, it looks at the various applications that have driven the development of compact sources of blue-green light, and reflects on the recent application of these lasers in high-density data storage, color displays, reprographics, and biomedical technology. Compact Blue-Green Lasers is suitable for graduate-level courses or as a reference for academics and professionals in optics, applied physics, and electrical engineering.
Author :
Publisher :
ISBN 13 :
Total Pages : 2540 pages
Book Rating : 4.3/5 (91 download)
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Hock Min Ng
Publisher :
ISBN 13 :
Total Pages : 872 pages
Book Rating : 4.:/5 (318 download)
Download or read book GaN and Related Alloys - 2003: Volume 798 written by Hock Min Ng and published by . This book was released on 2004-04-09 with total page 872 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author : E. Fred Schubert
Publisher : E. Fred Schubert
ISBN 13 : 0986382663
Total Pages : 660 pages
Book Rating : 4.9/5 (863 download)
Download or read book Light-Emitting Diodes (3rd Edition, 2018) written by E. Fred Schubert and published by E. Fred Schubert. This book was released on 2018-02-03 with total page 660 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 1st edition of the book “Light-Emitting Diodes” was published in 2003. The 2nd edition was published in 2006. The current 3rd edition of the book, a substantial expansion of the second edition, has 37 Chapters and includes a thorough discussion of white light-emitting diodes (LEDs), phosphor materials used in white LEDs, an expanded discussion of the various efficiencies encountered in the context of LEDs, and packaging materials and device technology. The background of light, color science, and human vision is provided as well. In the current edition, the fully colored illustrations are highly beneficial given the prominent role of light and color in the field of LEDs. The book is intended to be a comprehensive discussion of LEDs, particularly the physics, chemistry, and engineering associated with LEDs. It is published in electronic format in order to make the book affordable and easily accessible to a wide readership.
Author :
Publisher :
ISBN 13 :
Total Pages : 872 pages
Book Rating : 4.3/5 (91 download)
Download or read book GaN and Related Alloys written by and published by . This book was released on 2004 with total page 872 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Li He
Publisher : Springer
ISBN 13 : 3662527189
Total Pages : 698 pages
Book Rating : 4.6/5 (625 download)
Download or read book Technology for Advanced Focal Plane Arrays of HgCdTe and AlGaN written by Li He and published by Springer. This book was released on 2016-07-15 with total page 698 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book introduces the basic framework of advanced focal plane technology based on the third-generation infrared focal plane concept. The essential concept, research advances, and future trends in advanced sensor arrays are comprehensively reviewed. Moreover, the book summarizes recent research advances in HgCdTe/AlGaN detectors for the infrared/ultraviolet waveband, with a particular focus on the numerical method of detector design, material epitaxial growth and processing, as well as Complementary Metal-Oxide-Semiconductor Transistor readout circuits. The book offers a unique resource for all graduate students and researchers interested in the technologies of focal plane arrays or electro-optical imaging sensors.
Author : Choudhury J. Praharaj
Publisher : John Wiley & Sons
ISBN 13 : 111970863X
Total Pages : 196 pages
Book Rating : 4.1/5 (197 download)
Download or read book Group III-Nitride Semiconductor Optoelectronics written by Choudhury J. Praharaj and published by John Wiley & Sons. This book was released on 2023-11-07 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt: Discover a comprehensive exploration of the foundations and frontiers of the optoelectronics technology of group-III nitrides and their ternary alloys In Group III-Nitride Semiconductor Optoelectronics, expert engineer Dr. Choudhury J. Praharaj delivers an insightful overview of the optoelectronic applications of group III-nitride semiconductors. The book covers all relevant aspects of optical emission and detection, including the challenges of optoelectronic integration and a detailed comparison with other material systems. The author discusses band structure and optical properties of III-nitride semiconductors, as well as the properties of their low-dimensional structures. He also describes different optoelectronic systems such as LEDs, lasers, photodetectors, and optoelectronic integrated circuits. Group III-Nitride Semiconductor Optoelectronics covers both the fundamentals of the field and the most cutting-edge discoveries. Detailed appendices contain Maxwell's equations in dielectric media and descriptions of time-dependent perturbation theory and light-matter interaction. Readers will also benefit from: A thorough introduction to the band structure and optical properties of group III-nitride semiconductors Comprehensive explorations of growth and doping of group III-nitride devices and heterostructures Practical discussions of the optical properties of low dimensional structures in group III-nitrides In-depth examinations of lasers and light-emitting diodes, other light-emitting devices, photodetectors, photovoltaics, and optoelectronic integrated circuits Concise treatments of the quantum optical properties of nitride semiconductor devices Perfect for researchers in electrical engineering, applied physics, and materials science, Group III-Nitride Semiconductor Optoelectronics is also a must-read resource for graduate students and industry practitioners in those fields seeking a state-of-the-art reference on the optoelectronics technology of group III-nitrides.
Author : Lars Fredrik Voss
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (664 download)
Download or read book Thermally Stable Ohmic and Schottky Contacts to GaN written by Lars Fredrik Voss and published by . This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT: This dissertation is focused on the development of Ohmic and Schottky contacts to both nand p-type Gallium Nitride for use in microelectronic and optical devices. The goal is to develop low resistance contacts with greater thermal budgets and superior thermal aging characteristics to those commonly in use today as well as to understand the mechanisms by which these contacts may fail. In addition, p-type Ohmic contacts have been used to fabricate light emitting diodes (LEDs) which display far superior aging properties than those made with conventional Ni/Au contacts. Ohmic contacts to p-GaN were fabricated using a variety of refractory materials. The materials examined were of three basic types: boride, nitride, and the refractory metal Ir. The boride family includes W2B, W2B5, CrB2, ZrB2, and TiB2. The nitrides examined were TaN, TiN, and ZrN. Contacts based on these materials were fabricated using either a GaN//Ni/Au/X/Ti/Au, GaN//X/Ti/Au, or GaN//Ni/X/Au scheme, where X is the refractory material. Contact resistances as low as ~1 x 10-4 ohm/cm2 were consistently achieved after annealing at temperatures from 500-1000°C for 60 s in N2 using these materials for p-GaN with a carrier concentration of ~1 x 1017 cm-3.
Author :
Publisher :
ISBN 13 :
Total Pages : 1538 pages
Book Rating : 4.:/5 (318 download)
Download or read book Japanese Journal of Applied Physics written by and published by . This book was released on 2003 with total page 1538 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Thomas H. Myers
Publisher :
ISBN 13 :
Total Pages : 1070 pages
Book Rating : 4.:/5 (318 download)
Download or read book GaN and Related Alloys - 1999: Volume 595 written by Thomas H. Myers and published by . This book was released on 2000-05-05 with total page 1070 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book on gallium nitride (GaN) and associated materials focuses on advances in basic science, as well as the rapidly maturing technologies involving blue/green light emitters, detectors and high-power electronics. A highlight is a report on wide-bandgap semiconductor research done in Europe. Also reported is the commercialization of a laser operating at 405nm wavelength with a 4000-hour device lifetime. At 450nm emission wavelength, significant reductions in lifetime were found, and are believed to arise from nonideal properties of the InGaN alloy used in the active layer of the device. Additional topics include: the significant success of transistors for microwave applications; improvements in the epitaxy of GaN, using both selective area growth techniques (lateral epitaxy overgrowth) and introducing low-temperature intralayers in the films; advances in both molecular beam epitaxy and metal-organic vapor phase epitaxy, including several studies of quantum dot formation in strained alloys and improvements in hydride vapor phase epitaxy, particularly for providing very thick films.
