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Low Frequency Noise In Gaas Devices
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Book Synopsis Low Frequency Noise in GaAs Devices by : Andrzej Peczalski
Download or read book Low Frequency Noise in GaAs Devices written by Andrzej Peczalski and published by . This book was released on 1982 with total page 268 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Low Frequency Noise in GaAs MESFETs by : Danny Lo-tien Yeh
Download or read book Low Frequency Noise in GaAs MESFETs written by Danny Lo-tien Yeh and published by . This book was released on 1992 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Low-frequency Noise-reliability Correlation and Noise, Power Characteristics of GaAs HBTs and High-speed Integrated Circuits by : Saeed Mohammadi
Download or read book Low-frequency Noise-reliability Correlation and Noise, Power Characteristics of GaAs HBTs and High-speed Integrated Circuits written by Saeed Mohammadi and published by . This book was released on 2000 with total page 410 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Low-Frequency Noise in Advanced MOS Devices by : Martin Haartman
Download or read book Low-Frequency Noise in Advanced MOS Devices written by Martin Haartman and published by Springer Science & Business Media. This book was released on 2007-08-23 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is an introduction to noise, describing fundamental noise sources and basic circuit analysis, discussing characterization of low-frequency noise and offering practical advice that bridges concepts of noise theory and modelling, characterization, CMOS technology and circuits. The text offers the latest research, reviewing the most recent publications and conference presentations. The book concludes with an introduction to noise in analog/RF circuits and describes how low-frequency noise can affect these circuits.
Book Synopsis Fluctuation Phenomena and Noise Characterization of Si and GaAs Electron Devices by : Alexios Nikolaos Birbas
Download or read book Fluctuation Phenomena and Noise Characterization of Si and GaAs Electron Devices written by Alexios Nikolaos Birbas and published by . This book was released on 1988 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Transport And Noise In GaAs-Based Devices by :
Download or read book Transport And Noise In GaAs-Based Devices written by and published by . This book was released on 2004 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of this work was to study the noise in semiconductors and relate the transport mechanisms in the devices with the noise from the devices. The main part of the work was to set up a system for the measurement of noise in semiconductor devices. To establish the sensitivity of the system, it was calibrated at different temperatures. Some of the results from GaAs pn-junction showed some anomaly from that available in the literature. But certain points are yet to be clarified. This requires certain developments in the measurement system. In the case of QWIPS structures, studies on some samples with varying number of wells are required and in order to study the GR noise spectra and other activated processes, we need to study the temperature dependence of the noise and a larger bias variation for studying the low frequency current noise.
Book Synopsis GaAs High-Speed Devices by : C. Y. Chang
Download or read book GaAs High-Speed Devices written by C. Y. Chang and published by John Wiley & Sons. This book was released on 1994-10-28 with total page 632 pages. Available in PDF, EPUB and Kindle. Book excerpt: The performance of high-speed semiconductor devices—the genius driving digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics—is inextricably linked to the unique physical and electrical properties of gallium arsenide. Once viewed as a novel alternative to silicon, gallium arsenide has swiftly moved into the forefront of the leading high-tech industries as an irreplaceable material in component fabrication. GaAs High-Speed Devices provides a comprehensive, state-of-the-science look at the phenomenally expansive range of engineering devices gallium arsenide has made possible—as well as the fabrication methods, operating principles, device models, novel device designs, and the material properties and physics of GaAs that are so keenly integral to their success. In a clear five-part format, the book systematically examines each of these aspects of GaAs device technology, forming the first authoritative study to consider so many important aspects at once and in such detail. Beginning with chapter 2 of part one, the book discusses such basic subjects as gallium arsenide materials and crystal properties, electron energy band structures, hole and electron transport, crystal growth of GaAs from the melt and defect density analysis. Part two describes the fabrication process of gallium arsenide devices and integrated circuits, shedding light, in chapter 3, on epitaxial growth processes, molecular beam epitaxy, and metal organic chemical vapor deposition techniques. Chapter 4 provides an introduction to wafer cleaning techniques and environment control, wet etching methods and chemicals, and dry etching systems, including reactive ion etching, focused ion beam, and laser assisted methods. Chapter 5 provides a clear overview of photolithography and nonoptical lithography techniques that include electron beam, x-ray, and ion beam lithography systems. The advances in fabrication techniques described in previous chapters necessitate an examination of low-dimension device physics, which is carried on in detail in chapter 6 of part three. Part four includes a discussion of innovative device design and operating principles which deepens and elaborates the ideas introduced in chapter 1. Key areas such as metal-semiconductor contact systems, Schottky Barrier and ohmic contact formation and reliability studies are examined in chapter 7. A detailed discussion of metal semiconductor field-effect transistors, the fabrication technology, and models and parameter extraction for device analyses occurs in chapter 8. The fifth part of the book progresses to an up-to-date discussion of heterostructure field-effect (HEMT in chapter 9), potential-effect (HBT in chapter 10), and quantum-effect devices (chapters 11 and 12), all of which are certain to have a major impact on high-speed integrated circuits and optoelectronic integrated circuit (OEIC) applications. Every facet of GaAs device technology is placed firmly in a historical context, allowing readers to see instantly the significant developmental changes that have shaped it. Featuring a look at devices still under development and device structures not yet found in the literature, GaAs High-Speed Devices also provides a valuable glimpse into the newest innovations at the center of the latest GaAs technology. An essential text for electrical engineers, materials scientists, physicists, and students, GaAs High-Speed Devices offers the first comprehensive and up-to-date look at these formidable 21st century tools. The unique physical and electrical properties of gallium arsenide has revolutionized the hardware essential to digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics. GaAs High-Speed Devices provides the first fully comprehensive look at the enormous range of engineering devices gallium arsenide has made possible as well as the backbone of the technology—ication methods, operating principles, and the materials properties and physics of GaAs—device models and novel device designs. Featuring a clear, six-part format, the book covers: GaAs materials and crystal properties Fabrication processes of GaAs devices and integrated circuits Electron beam, x-ray, and ion beam lithography systems Metal-semiconductor contact systems Heterostructure field-effect, potential-effect, and quantum-effect devices GaAs Microwave Monolithic Integrated Circuits and Digital Integrated Circuits In addition, this comprehensive volume places every facet of the technology in an historical context and gives readers an unusual glimpse at devices still under development and device structures not yet found in the literature.
Book Synopsis Noise In Physical Systems And 1/f Fluctuations - Proceedings Of The 14th International Conference by : C Claeys
Download or read book Noise In Physical Systems And 1/f Fluctuations - Proceedings Of The 14th International Conference written by C Claeys and published by World Scientific. This book was released on 1997-06-01 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt: The recent conferences in this series were organised in Montreal (1987), Budapest (1989), Kyoto (1991), St Louis (1993) and Palanga (1995). The aim of the conference was to bring together specialists in fluctuation phenomena from different fields and to make a bridge between theoretical scientists and more applied or engineering oriented researchers. Therefore a broad variety of topics covering the fundamental aspects of noise and fluctuations as well as applications in various fields are addressed. Noise in materials, components, circuits and electronic, biological and other physical systems are discussed.
Book Synopsis GaAs Devices and Circuits by : Michael S. Shur
Download or read book GaAs Devices and Circuits written by Michael S. Shur and published by Springer Science & Business Media. This book was released on 2013-11-21 with total page 677 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.
Book Synopsis Noise in Semiconductor Devices by : Kuang-Hann George Duh
Download or read book Noise in Semiconductor Devices written by Kuang-Hann George Duh and published by . This book was released on 1984 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Noise in Physical Systems and 1/f Fluctuations by : T. Musha
Download or read book Noise in Physical Systems and 1/f Fluctuations written by T. Musha and published by IOS Press. This book was released on 1992 with total page 784 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents and discusses fundamental aspects and key implications of noise and fluctuations in various fields of science, technology and sociology, with special emphasis in 1/f fluctuations in biology. There are contributions from leading international experts.
Book Synopsis Low-Frequency Noise in Semiconductors by : Purushothaman Srinivasan
Download or read book Low-Frequency Noise in Semiconductors written by Purushothaman Srinivasan and published by Springer. This book was released on 2014-03-28 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explains in a straightforward manner the complex phenomenon of low-frequency noise, its physical origin and mechanism in Metal Oxide Semiconductor devices. Coverage includes the physics and math of noise, how to characterize, simulate and model noise at a device and circuit level, as well as its relationship to other device parameters. Readers will learn how either to optimize or minimize this parameter at different levels of semiconductor processes and design, its impact on device and circuit reliability, what forms would it take and how would it behave under various circumstances. Detailed explanations are included of what would be the impact of low-frequency noise on different types of devices and circuits in various electrical/physical environments, how and when to identify its criticality during circuit design, how to suppress its behavior by effective engineering and the trade-offs for a successful product design.
Book Synopsis Low Frequency Noise in GaAs Schottky Diodes and MESFETs by : Abdallah Eskandarian
Download or read book Low Frequency Noise in GaAs Schottky Diodes and MESFETs written by Abdallah Eskandarian and published by . This book was released on 1985 with total page 125 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Quantum Low Frequency Noise in Solid State and Collision Free Devices by : Peng Fang
Download or read book Quantum Low Frequency Noise in Solid State and Collision Free Devices written by Peng Fang and published by . This book was released on 1988 with total page 294 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Low Frequency Noise in Sub-100nm Silicon Structures by : Theresa Anne Kramer
Download or read book Low Frequency Noise in Sub-100nm Silicon Structures written by Theresa Anne Kramer and published by . This book was released on 2003 with total page 206 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gallium Nitride Electronics by : Rüdiger Quay
Download or read book Gallium Nitride Electronics written by Rüdiger Quay and published by Springer Science & Business Media. This book was released on 2008-04-05 with total page 492 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is based on nearly a decade of materials and electronics research at the leading research institution on the nitride topic in Europe. It is a comprehensive monograph and tutorial that will be of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; to all scientists with a general interest in advanced electronics.
Book Synopsis DC, RF and Low Frequency Noise Characterization of C and In/C Doped GalnP/GaAs HBT's by :
Download or read book DC, RF and Low Frequency Noise Characterization of C and In/C Doped GalnP/GaAs HBT's written by and published by . This book was released on 1909 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This paper presents a comparative study, based on DC, RF and low frequency noise (LFN) measurements, between Carbon-doped, and Indium/Carbon doped GalnP/GaAs HBT's featuring different emitter widths. Both technologies exhibit an evident emitter size effect, while C-doped devices have larger DC and RF gains and a lower input voltage noise level. The better performance has been justified in terms of a higher quality of the extrinsic base surface. This explanation was supported by the LFN measurements carried out on self-aligned devices, which revealed an electron diffusion current from the emitter toward the base, probably due to the pinning of the Fermi level at the surface. The HBT's have been compared also in terms of reliability by means of electrical stress performed at room temperature. The effect, of the stress Was a DC current gain increase associated with a reduction of the base current and of the input voltage noise lorentzian component. The In/C doped devices exhibited the largest variations, and were more sensitive to the current stress.