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Low Frequency Noise Characteristics In The Mosfets Processed In 65 Nm Technologyproject Supported By The National Natural Science Foundation Of China Nos 61574048 61204112 And The Guangdong Natural Science Foundation No 2014a030313656
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Book Synopsis Low-frequency Noise Characteristics in the MOSFETs Processed in 65 Nm Technology*Project Supported by the National Natural Science Foundation of China (Nos. 61574048, 61204112) and the Guangdong Natural Science Foundation (No. 2014A030313656). by :
Download or read book Low-frequency Noise Characteristics in the MOSFETs Processed in 65 Nm Technology*Project Supported by the National Natural Science Foundation of China (Nos. 61574048, 61204112) and the Guangdong Natural Science Foundation (No. 2014A030313656). written by and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: Low-frequency noise behavior in the MOSFETs processed in 65 nm technology is investigated in this paper. Low-frequency noise for NMOS transistors agrees with McWhorter's theory (carrier number fluctuation), low-frequency noise in the sub-threshold regime agrees with McWhorter's theory for PMOS transistors while it agree with Hooge's theory (carrier mobility fluctuation) in the channel strong inversion regime. According to carrier number fluctuation model, the extracted trap densities near the interface between channel and gate oxide for NMOS and PMOS transistor are 3.94 × 10 17 and 3.56 × 10 18 cm −3 /eV respectively. According to carrier mobility fluctuation model, the extracted average Hooge's parameters are 2.42 × 10 −5 and 4 × 10 −4 . By consideration of BSIM compact model, it is shown that two noise parameters (NOIA and NOIB) can model the intrinsic channel noise. The extracted NOIA and NOIB are constants for PMOS and their values are equal to 3.94 × 10 17 cm −3 /eV and 9.31 × 10 −4 V −1 . But for NMOS, NOIA is also a constant while NOIB is inversely proportional to the effective gate voltage. The extracted NOIA and NOIB for NMOS are equal to 3.56 × 10 18 cm −3 /eV and 1.53 × 10 −2 V −1 . Good agreement between simulation and experimental results is achieved.
Book Synopsis Observation of Nonconservation Characteristics of Radio Frequency Noise Mechanism of 40-nm N-MOSFET *Project Supported by the National Natural Science Foundation of China (Grant No. 69901003) and the Scientific Research Fund of Sichuan Provincial Education Department by :
Download or read book Observation of Nonconservation Characteristics of Radio Frequency Noise Mechanism of 40-nm N-MOSFET *Project Supported by the National Natural Science Foundation of China (Grant No. 69901003) and the Scientific Research Fund of Sichuan Provincial Education Department written by and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract : Bias non-conservation characteristics of radio-frequency noise mechanism of 40-nm n-MOSFET are observed by modeling and measuring its drain current noise. A compact model for the drain current noise of 40-nm MOSFET is proposed through the noise analysis. This model fully describes three kinds of main physical sources that determine the noise mechanism of 40-nm MOSFET, i.e., intrinsic drain current noise, thermal noise induced by the gate parasitic resistance, and coupling thermal noise induced by substrate parasitic effect. The accuracy of the proposed model is verified by noise measurements, and the intrinsic drain current noise is proved to be the suppressed shot noise, and with the decrease of the gate voltage, the suppressed degree gradually decreases until it vanishes. The most important findings of the bias non-conservative nature of noise mechanism of 40-nm n-MOSFET are as follows. (i) In the strong inversion region, the suppressed shot noise is weakly affected by the thermal noise of gate parasitic resistance. Therefore, one can empirically model the channel excess noise as being like the suppressed shot noise. (ii) In the middle inversion region, it is almost full of shot noise. (iii) In the weak inversion region, the thermal noise is strongly frequency-dependent, which is almost controlled by the capacitive coupling of substrate parasitic resistance. Measurement results over a wide temperature range demonstrate that the thermal noise of 40-nm n-MOSFET exists in a region from the weak to strong inversion, contrary to the predictions of suppressed shot noise model only suitable for the strong inversion and middle inversion region. These new findings of the noise mechanism of 40-nm n-MOSFET are very beneficial for its applications in ultra low-voltage and low-power RF, such as novel device electronic structure optimization, integrated circuit design and process technology evaluation.
