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Liquid Phase Epitaxial Growth And Characterization Of Germanium Far Infrared Blocked Impurity Band Detectors
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Book Synopsis Liquid Phase Epitaxial Growth and Characterization of Germanium Far Infrared Blocked Impurity Band Detectors by : Jordana Bandaru
Download or read book Liquid Phase Epitaxial Growth and Characterization of Germanium Far Infrared Blocked Impurity Band Detectors written by Jordana Bandaru and published by . This book was released on 2001 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Liquid Phase Epitaxial Growth and Characterization of Germanium Far Infrared Blocked Impurity Band Detectors by :
Download or read book Liquid Phase Epitaxial Growth and Characterization of Germanium Far Infrared Blocked Impurity Band Detectors written by and published by . This book was released on 2002 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Germanium Blocked Impurity Band (BIB) detectors require a high purity blocking layer (
Book Synopsis Advanced Far Infrared Blocked Impurity Band Detectors Based on Germanium Liquid Phase Epitaxy by : Christopher Sean Olsen
Download or read book Advanced Far Infrared Blocked Impurity Band Detectors Based on Germanium Liquid Phase Epitaxy written by Christopher Sean Olsen and published by . This book was released on 1998 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials by : Peter Capper
Download or read book Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials written by Peter Capper and published by John Wiley & Sons. This book was released on 2007-08-20 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt: Liquid-Phase Epitaxy (LPE) is a technique used in the bulk growth of crystals, typically in semiconductor manufacturing, whereby the crystal is grown from a rich solution of the semiconductor onto a substrate in layers, each of which is formed by supersaturation or cooling. At least 50% of growth in the optoelectronics area is currently focussed on LPE. This book covers the bulk growth of semiconductors, i.e. silicon, gallium arsenide, cadmium mercury telluride, indium phosphide, indium antimonide, gallium nitride, cadmium zinc telluride, a range of wide-bandgap II-VI compounds, diamond and silicon carbide, and a wide range of oxides/fluorides (including sapphire and quartz) that are used in many industrial applications. A separate chapter is devoted to the fascinating field of growth in various forms of microgravity, an activity that is approximately 30-years old and which has revealed many interesting features, some of which have been very surprising to experimenters and theoreticians alike. Covers the most important materials within the field The contributors come from a wide variety of countries and include both academics and industrialists, to give a balanced treatment Builds-on an established series known in the community Highly pertinent to current and future developments in telecommunications and computer-processing industries.
Book Synopsis Germanium Blocked Impurity Band Far Infrared Detectors by : Carolyn Sally Rossington
Download or read book Germanium Blocked Impurity Band Far Infrared Detectors written by Carolyn Sally Rossington and published by . This book was released on 1988 with total page 268 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Development of Ultra Pure Germanium Epi Layers for Blocked Impurity Band Far Infrared Detectors by : Melanie Paula Lutz
Download or read book Development of Ultra Pure Germanium Epi Layers for Blocked Impurity Band Far Infrared Detectors written by Melanie Paula Lutz and published by . This book was released on 1991 with total page 206 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Germanium Far Infrared Blocked Impurity Band Detectors by : Supriya Goyal
Download or read book Germanium Far Infrared Blocked Impurity Band Detectors written by Supriya Goyal and published by . This book was released on 2006 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt: Several important issues in the fabrication and performance of Ge Blocked Impurity Band (BIB) devices based on Liquid Phase Epitaxy (LPE) grown Ge films and on ion implantation have been studied and are presented in this thesis.
Book Synopsis Handbook of Crystal Growth by : Tom Kuech
Download or read book Handbook of Crystal Growth written by Tom Kuech and published by Elsevier. This book was released on 2014-11-02 with total page 1384 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume IIIA Basic Techniques Handbook of Crystal Growth, Second Edition Volume IIIA (Basic Techniques), edited by chemical and biological engineering expert Thomas F. Kuech, presents the underpinning science and technology associated with epitaxial growth as well as highlighting many of the chief and burgeoning areas for epitaxial growth. Volume IIIA focuses on major growth techniques which are used both in the scientific investigation of crystal growth processes and commercial development of advanced epitaxial structures. Techniques based on vacuum deposition, vapor phase epitaxy, and liquid and solid phase epitaxy are presented along with new techniques for the development of three-dimensional nano-and micro-structures. Volume IIIB Materials, Processes, and Technology Handbook of Crystal Growth, Second Edition Volume IIIB (Materials, Processes, and Technology), edited by chemical and biological engineering expert Thomas F. Kuech, describes both specific techniques for epitaxial growth as well as an array of materials-specific growth processes. The volume begins by presenting variations on epitaxial growth process where the kinetic processes are used to develop new types of materials at low temperatures. Optical and physical characterizations of epitaxial films are discussed for both in situ and exit to characterization of epitaxial materials. The remainder of the volume presents both the epitaxial growth processes associated with key technology materials as well as unique structures such as monolayer and two dimensional materials. Volume IIIA Basic Techniques Provides an introduction to the chief epitaxial growth processes and the underpinning scientific concepts used to understand and develop new processes. Presents new techniques and technologies for the development of three-dimensional structures such as quantum dots, nano-wires, rods and patterned growth Introduces and utilizes basic concepts of thermodynamics, transport, and a wide cross-section of kinetic processes which form the atomic level text of growth process Volume IIIB Materials, Processes, and Technology Describes atomic level epitaxial deposition and other low temperature growth techniques Presents both the development of thermal and lattice mismatched streams as the techniques used to characterize the structural properties of these materials Presents in-depth discussion of the epitaxial growth techniques associated with silicone silicone-based materials, compound semiconductors, semiconducting nitrides, and refractory materials
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1992 with total page 1572 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Infrared Spaceborne Remote Sensing by :
Download or read book Infrared Spaceborne Remote Sensing written by and published by . This book was released on 2005 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis International Aerospace Abstracts by :
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1999 with total page 974 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis American Doctoral Dissertations by :
Download or read book American Doctoral Dissertations written by and published by . This book was released on 2001 with total page 776 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Epitaxial Growth of Nitrides on Germanium by : Ruben Lieten
Download or read book Epitaxial Growth of Nitrides on Germanium written by Ruben Lieten and published by ASP / VUBPRESS / UPA. This book was released on 2009-09 with total page 175 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive guide to the formation of epitaxial III-Nitrides and epitaxial Ge3N4 on germanium substrates--and solid phase epitaxy of germanium on silicon substrates--this work presents a simple but effective method for growing epitaxial III-Nitride layers on crystalline germanium surfaces. Beside epitaxial III-Nitride growth, a method is introduced to obtain epitaxial Ge3N4 on germanium. Finally a novel method to produce high-quality germanium layers on silicon is introduced, allowing interactions between germanium devices and silicon technology. This study provides researchers with a detailed look at the formation of crystalline nitrides on germanium, germanium on silicon, Schottky contacts on germanium, and electrochemical measurements.
Book Synopsis Growth and Characterization of Liquid Phase Epitaxial GaP Layers by : Yung-Chung Kao
Download or read book Growth and Characterization of Liquid Phase Epitaxial GaP Layers written by Yung-Chung Kao and published by . This book was released on 1982 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Modeling Low Temperature C-V Profiling in Blocked Impurity Band Detectors by :
Download or read book Modeling Low Temperature C-V Profiling in Blocked Impurity Band Detectors written by and published by . This book was released on 2005 with total page 51 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Blocked Impurity Band (BIB) detectors are state-of-the-art devices to detect light in the near to mid infrared range (5-40 m). Numerical modeling of BIB detectors is performed using a four-region finite difference approach to study the role of space charge in C-V (capacitance-voltage) profiling of minority carrier doping and the role of blocking layer thickness and minority doping concentration in alternate bias operation. Compensation in the blocking layer is found to play a critical role in determining the net voltage drop in this part of the device under alternate polarity bias. The effect of space charge at the blocking layer/active layer interface on the measured low temperature C-V distribution is modeled as a function of the doping interface between the two layers. The magnitude of the space charge can cause large deviations in the measurement of minority doping concentration from the idealized case which assumes a space-charge free blocking layer and interface. Accurately determining these minority doping concentrations is a crucial step toward solving material growth challenges in proposed far infrared Ge and GaAs devices.
Book Synopsis Government Reports Annual Index by :
Download or read book Government Reports Annual Index written by and published by . This book was released on 1989 with total page 1672 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics Briefs written by and published by . This book was released on 1992 with total page 820 pages. Available in PDF, EPUB and Kindle. Book excerpt:
