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Layout Techniques For Mosfets
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Book Synopsis Layout Techniques for MOSFETs by : Salvador Pinillos Gimenez
Download or read book Layout Techniques for MOSFETs written by Salvador Pinillos Gimenez and published by Morgan & Claypool Publishers. This book was released on 2016-03-24 with total page 83 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book aims at describing in detail the different layout techniques for remarkably boosting the electrical performance and the ionizing radiation tolerance of planar Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (MOSFETs) without adding any costs to the current planar Complementary MOS (CMOS) integrated circuits (ICs) manufacturing processes. These innovative layout styles are based on pn junctions engineering between the drain/source and channel regions or simply MOSFET gate layout change. These interesting layout structures are capable of incorporating new effects in the MOSFET structures, such as the Longitudinal Corner Effect (LCE), the Parallel connection of MOSFETs with Different Channel Lengths Effect (PAMDLE), the Deactivation of the Parallel MOSFETs in the Bird's Beak Regions (DEPAMBBRE), and the Drain Leakage Current Reduction Effect (DLECRE), which are still seldom explored by the semiconductor and CMOS ICs industries. Several three-dimensional (3D) numerical simulations and experimental works are referenced in this book to show how these layout techniques can help the designers to reach the analog and digital CMOS ICs specifications with no additional cost. Furthermore, the electrical performance and ionizing radiation robustness of the analog and digital CMOS ICs can significantly be increased by using this gate layout approach.
Book Synopsis Layout Techniques in MOSFETs by : Salvador Pinillos Gimenez
Download or read book Layout Techniques in MOSFETs written by Salvador Pinillos Gimenez and published by Springer Nature. This book was released on 2022-06-01 with total page 69 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book aims at describing in detail the different layout techniques for remarkably boosting the electrical performance and the ionizing radiation tolerance of planar Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (MOSFETs) without adding any costs to the current planar Complementary MOS (CMOS) integrated circuits (ICs) manufacturing processes. These innovative layout styles are based on pn junctions engineering between the drain/source and channel regions or simply MOSFET gate layout change. These interesting layout structures are capable of incorporating new effects in the MOSFET structures, such as the Longitudinal Corner Effect (LCE), the Parallel connection of MOSFETs with Different Channel Lengths Effect (PAMDLE), the Deactivation of the Parallel MOSFETs in the Bird's Beak Regions (DEPAMBBRE), and the Drain Leakage Current Reduction Effect (DLECRE), which are still seldom explored by the semiconductor and CMOS ICs industries. Several three-dimensional (3D) numerical simulations and experimental works are referenced in this book to show how these layout techniques can help the designers to reach the analog and digital CMOS ICs specifications with no additional cost. Furthermore, the electrical performance and ionizing radiation robustness of the analog and digital CMOS ICs can significantly be increased by using this gate layout approach.
Book Synopsis CMOS Analog Design Using All-Region MOSFET Modeling by : Márcio Cherem Schneider
Download or read book CMOS Analog Design Using All-Region MOSFET Modeling written by Márcio Cherem Schneider and published by Cambridge University Press. This book was released on 2010-01-28 with total page 505 pages. Available in PDF, EPUB and Kindle. Book excerpt: The essentials of analog circuit design with a unique all-region MOSFET modeling approach.
Book Synopsis MOSFET Modeling for Circuit Analysis and Design by : Carlos Galup-Montoro
Download or read book MOSFET Modeling for Circuit Analysis and Design written by Carlos Galup-Montoro and published by World Scientific. This book was released on 2007 with total page 445 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.
Book Synopsis Analysis and Design of MOSFETs by : Juin Jei Liou
Download or read book Analysis and Design of MOSFETs written by Juin Jei Liou and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 356 pages. Available in PDF, EPUB and Kindle. Book excerpt: Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.
Book Synopsis Differentiated Layout Styles for MOSFETs by : Salvador Pinillos Gimenez
Download or read book Differentiated Layout Styles for MOSFETs written by Salvador Pinillos Gimenez and published by Springer Nature. This book was released on 2023-05-05 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes in detail the semiconductor physics and the effects of the high temperatures and ionizing radiations in the electrical behavior of the Metal-OxideSemiconductor Field Effect Transistors (MOSFETs), implemented with the first and second generations of the differentiated layout styles. The authors demonstrate a variety of innovative layout styles for MOSFETs, enabling readers to design analog and RF MOSFETs that operate in a high-temperature wide range and an ionizing radiation environment with high electrical performance and reduced die area.
Download or read book CMOS written by R. Jacob Baker and published by John Wiley & Sons. This book was released on 2008 with total page 1074 pages. Available in PDF, EPUB and Kindle. Book excerpt: This edition provides an important contemporary view of a wide range of analog/digital circuit blocks, the BSIM model, data converter architectures, and more. The authors develop design techniques for both long- and short-channel CMOS technologies and then compare the two.
Book Synopsis Design and Development of Efficient Energy Systems by : Suman Lata Tripathi
Download or read book Design and Development of Efficient Energy Systems written by Suman Lata Tripathi and published by John Wiley & Sons. This book was released on 2021-04-13 with total page 386 pages. Available in PDF, EPUB and Kindle. Book excerpt: There is not a single industry which will not be transformed by machine learning and Internet of Things (IoT). IoT and machine learning have altogether changed the technological scenario by letting the user monitor and control things based on the prediction made by machine learning algorithms. There has been substantial progress in the usage of platforms, technologies and applications that are based on these technologies. These breakthrough technologies affect not just the software perspective of the industry, but they cut across areas like smart cities, smart healthcare, smart retail, smart monitoring, control, and others. Because of these “game changers,” governments, along with top companies around the world, are investing heavily in its research and development. Keeping pace with the latest trends, endless research, and new developments is paramount to innovate systems that are not only user-friendly but also speak to the growing needs and demands of society. This volume is focused on saving energy at different levels of design and automation including the concept of machine learning automation and prediction modeling. It also deals with the design and analysis for IoT-enabled systems including energy saving aspects at different level of operation. The editors and contributors also cover the fundamental concepts of IoT and machine learning, including the latest research, technological developments, and practical applications. Valuable as a learning tool for beginners in this area as well as a daily reference for engineers and scientists working in the area of IoT and machine technology, this is a must-have for any library.
Book Synopsis Analog IC Design Techniques for Nanopower Biomedical Signal Processing by : Chutham Sawigun
Download or read book Analog IC Design Techniques for Nanopower Biomedical Signal Processing written by Chutham Sawigun and published by River Publishers. This book was released on 2016-05-31 with total page 200 pages. Available in PDF, EPUB and Kindle. Book excerpt: As the requirements for low power consumption and very small physical dimensions in portable, wearable and implantable medical devices are calling for integrated circuit design techniques using MOSFETs operating in the subthreshold regime, this book first revisits some well-known circuit techniques that use CMOS devices biased in subthreshold in order to establish nanopower integrated circuit designs. Based on the these findings, this book shows the development of a class-AB current-mode sample-and-hold circuit with an order of magnitude improvement in its figure of merit compared to other state-of-the-art designs. Also, the concepts and design procedures of 1) single-branch filters 2) follower-integrator-based lowpass filters and 3) modular transconductance reduction techniques for very low frequency filters are presented. Finally, to serve the requirement of a very large signal swing in an energy-based action potential detector, a nanopower class-AB current-mode analog multiplier is designed to handle input current amplitudes of more than 10 times the bias current of the multiplier circuit. The invented filter circuits have been fabricated in a standard 0.18 µ CMOS process in order to verify our circuit concepts and design procedures. Their experimental results are reported.
Book Synopsis Mosfet in Circuit Design: Metal-oxide-semiconductor Field-effect Transistors for Discrete and Integrated-circuit Technology by : Robert H. Crawford
Download or read book Mosfet in Circuit Design: Metal-oxide-semiconductor Field-effect Transistors for Discrete and Integrated-circuit Technology written by Robert H. Crawford and published by . This book was released on 1967 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Art of Analog Layout by : Alan Hastings
Download or read book The Art of Analog Layout written by Alan Hastings and published by . This book was released on 2006 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt: For Electrical Engineering courses in analog layout or professional layout designers. This text covers the issues involved in successfully laying out analog integrated circuits. Hastings provides clear guidance and does not stress theoretical physics or mathematical analysis of layouts. He emphasizes cross- sections of devices and carrier-based models of device operation as compared to the more common geometric and schematic representation of devices.
Book Synopsis Fundamentals of Layout Design for Electronic Circuits by : Jens Lienig
Download or read book Fundamentals of Layout Design for Electronic Circuits written by Jens Lienig and published by Springer Nature. This book was released on 2020-03-19 with total page 319 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers the fundamental knowledge of layout design from the ground up, addressing both physical design, as generally applied to digital circuits, and analog layout. Such knowledge provides the critical awareness and insights a layout designer must possess to convert a structural description produced during circuit design into the physical layout used for IC/PCB fabrication. The book introduces the technological know-how to transform silicon into functional devices, to understand the technology for which a layout is targeted (Chap. 2). Using this core technology knowledge as the foundation, subsequent chapters delve deeper into specific constraints and aspects of physical design, such as interfaces, design rules and libraries (Chap. 3), design flows and models (Chap. 4), design steps (Chap. 5), analog design specifics (Chap. 6), and finally reliability measures (Chap. 7). Besides serving as a textbook for engineering students, this book is a foundational reference for today’s circuit designers. For Slides and Other Information: https://www.ifte.de/books/pd/index.html
Book Synopsis Transistor Level Modeling for Analog/RF IC Design by : Wladyslaw Grabinski
Download or read book Transistor Level Modeling for Analog/RF IC Design written by Wladyslaw Grabinski and published by Springer Science & Business Media. This book was released on 2006-07-01 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt: The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The variety of subjects and the high quality of content of this volume make it a reference document for researchers and users of MOSFET devices and models. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization. The book will appeal equally to PhD students who want to understand the ins and outs of MOSFETs as well as to modeling designers working in the analog and high-frequency areas.
Book Synopsis The Power MOSFET Application Handbook by :
Download or read book The Power MOSFET Application Handbook written by and published by . This book was released on 2016 with total page 315 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Mosfet in Circuit Design written by and published by . This book was released on 1967 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Designing with Field-effect Transistors by : Edwin S. Oxner
Download or read book Designing with Field-effect Transistors written by Edwin S. Oxner and published by McGraw-Hill Companies. This book was released on 1990 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: projetos eletronicos utilizando transistor de efeito de campo (fet).
Book Synopsis Mosfet Modeling For Circuit Analysis And Design by : Carlos Galup-montoro
Download or read book Mosfet Modeling For Circuit Analysis And Design written by Carlos Galup-montoro and published by World Scientific. This book was released on 2007-02-27 with total page 445 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.
