Read Books Online and Download eBooks, EPub, PDF, Mobi, Kindle, Text Full Free.
Layered Two Dimensional Heterostructures And Their Tunneling Characteristics
Download Layered Two Dimensional Heterostructures And Their Tunneling Characteristics full books in PDF, epub, and Kindle. Read online Layered Two Dimensional Heterostructures And Their Tunneling Characteristics ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Book Synopsis Layered Two-Dimensional Heterostructures and Their Tunneling Characteristics by : Sergio C. de la Barrera
Download or read book Layered Two-Dimensional Heterostructures and Their Tunneling Characteristics written by Sergio C. de la Barrera and published by Springer. This book was released on 2017-11-21 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis demonstrates that layered heterostructures of two-dimensional crystals graphene, hexagonal boron nitride, and transition metal dichalcogenides provide new and interesting interlayer transport phenomena. Low-energy electron microscopy is employed to study the surface of atomically thin WSe2 prepared by metal-organic chemical vapor deposition on epitaxial graphene substrates, and a method for unambiguously measuring the number of atomic layers is presented. Using very low-energy electrons to probe the surface of similar heterostructures, a relationship between extracted work function differences from the layers and the nature of the electrical contact between them is revealed. An extension of this analysis is applied to surface studies of MoSe2 prepared by molecular beam epitaxy on epitaxial graphene. A large work function difference is measured between the MoSe2 and graphene, and a model is provided which suggests that this observation results from an exceptional defect density in the MoSe2 film. The thesis expounds a theory for computing tunneling currents between two-dimensional crystals separated by a thin insulating barrier; a few situations resulting in resonant tunneling and negative differential resistance are illustrated by computed examples, as well as observed characteristics, for monolayer and bilayer graphene tunneling junctions and transistors.
Book Synopsis Properties of Synthetic Two-Dimensional Materials and Heterostructures by : Yu-Chuan Lin
Download or read book Properties of Synthetic Two-Dimensional Materials and Heterostructures written by Yu-Chuan Lin and published by Springer. This book was released on 2018-10-23 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book represents a significant advance in our understanding of the synthesis and properties of two-dimensional (2D) materials. The author’s work breaks new ground in the understanding of a number of 2D crystals, including atomically thin transition metal dichalcogenides, graphene, and their heterostructures, that are technologically important to next-generation electronics. In addition to critical new results on the direct growth of 2D heterostructures, it also details growth mechanisms, surface science, and device applications of “epi-grade” 2D semiconductors, which are essential to low-power electronics, as well as for extending Moore’s law. Most importantly, it provides an effective alternative to mechanically exfoliate 2D layers for practical applications.
Book Synopsis Van der Waals Heterostructures by : Zhuo Kang
Download or read book Van der Waals Heterostructures written by Zhuo Kang and published by John Wiley & Sons. This book was released on 2022-12-02 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt: Van der Waals Heterostructures A comprehensive resource systematically detailing the developments and applications of van der Waals heterostructures and devices Van der Waals Heterostructures is essential reading to understand the developments made in van der Waals heterostructures and devices in all aspects, from basic synthesis to physical analysis and heterostructures assembling to devices applications, including demonstrated applications of van der Waals heterostructure on electronics, optoelectronics, and energy conversion, such as solar energy, hydrogen energy, batteries, catalysts, biotechnology, and more. This book starts from an in-depth introduction of van der Waals interactions in layered materials and the forming of mixed-dimensional heterostructures via van der Waals force. It then comprehensively summarizes the synthetic methods, devices building processes and physical mechanism of 2D van der Waals heterostructures, and devices including 2D-2D electronics, 2D-2D optoelectronics, and mixed dimensional van der Waals heterostructures. In Van der Waals Heterostructures, readers can expect to find specific information on: The current library of 2D semiconductors and the current synthesis and performances of 2D semiconductors Controllable synthesis and assemble van der Waals heterostructures, physics of the van der Waals interface, and multi-field coupling effects 2D-2D electronics, 2D-2D optoelectronics, mixed dimensional van der Waals heterostructures, and van der Waals heterostructure applications on energy conversion Insight into future perspectives of the van der Waals heterostructures and devices with the detailed effective role of 2D materials for integrated electrical and electronic equipment
Book Synopsis Preparation and Properties of 2D Materials by : Byungjin Cho
Download or read book Preparation and Properties of 2D Materials written by Byungjin Cho and published by MDPI. This book was released on 2020-12-10 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the great success of graphene, atomically thin-layered nanomaterials, called two dimensional (2D) materials, have attracted tremendous attention due to their extraordinary physical properties. Specifically, van der Waals heterostructured architectures based on a few 2D materials, named atomic-scale Lego, have been proposed as unprecedented platforms for the implementation of versatile devices with a completely novel function or extremely high-performance, shifting the research paradigm in materials science and engineering. Thus, diverse 2D materials beyond existing bulk materials have been widely studied for promising electronic, optoelectronic, mechanical, and thermoelectric applications. Especially, this Special Issue included the recent advances in the unique preparation methods such as exfoliation-based synthesis and vacuum-based deposition of diverse 2D materials and also their device applications based on interesting physical properties. Specifically, this Editorial consists of the following two parts: Preparation methods of 2D materials and Properties of 2D materials
Book Synopsis Engineering Interfacial Effects and Layered Behavior in 2D Materials by : Nathan P. Wilson
Download or read book Engineering Interfacial Effects and Layered Behavior in 2D Materials written by Nathan P. Wilson and published by . This book was released on 2020 with total page 139 pages. Available in PDF, EPUB and Kindle. Book excerpt: The rise of two-dimensional (2D) materials over the last one-and-a-half decades can be attributed to two separate reasons. The first is the discovery of new materials with unique properties that derive partially, if not entirely from their low dimensionality, as is the case for 2D Chern insulators. The second is the ability to combine 2D materials together arbitrarily through van der Waals stacking to form custom layered structures with engineered properties. But more than just offering a new knob for controlling materials, van der Waals heterostructures have produced to breakthrough discoveries in basic science, helping us create new electronic phases and explore topology in new ways. Central to producing these effects are the different types of interactions between layers, from the most trivial effects like dielectric screening to more complex interactions like interlayer charge transfer and exchange interactions. Consequently, learning how to control interlayer interactions and predict the physical outcomes they produce has become a key scientific challenge in the 2D materials community. In this dissertation, several approaches to engineering, controlling, and harnessing the power of interlayer and interfacial effects in various 2D material systems are explored. First, we introduce a new, powerful spectroscopic tool for understanding the effects of quantum confinement on excitons, optically excited and bound electron-hole pairs, in 2D semiconductors, and use it to explore the intricacies of the Hamiltonian of these 2D excitons. We then discuss the novel properties of heterobilayers of 2D semiconductors which host interlayer excitons in which the electron and hole reside in opposite layers, and present a simple approach to enhancing the beneficial properties of these interlayer excitons for studying their many-body physics by modifying the interlayer interaction with a tunneling barrier. Finally, we use various optical and spectroscopic probes to investigate a new type of behavior found in layered magnetic van der Waals materials, layered magnetism, which results from the fundamental anisotropy of the materials. We analyze a simple approach to engineering the interlayer magnetic coupling in such materials, and uncover a deep, underlying connection between the layered magnetic order and the optical excitations in a newly discovered 2D magnetic semiconductor.
Book Synopsis 2D Nanoscale Heterostructured Materials by : Satyabrata Jit
Download or read book 2D Nanoscale Heterostructured Materials written by Satyabrata Jit and published by Elsevier. This book was released on 2020-05-09 with total page 285 pages. Available in PDF, EPUB and Kindle. Book excerpt: 2D Nanoscale Heterostructured Materials: Synthesis, Properties, and Applications assesses the current status and future prospects for 2D materials other than graphene (e.g., BN nanosheets, MoS2, NbSe2, WS2, etc.) that have already been contemplated for both low-end and high-end technological applications. The book offers an overview of the different synthesis techniques for 2D materials and their heterostructures, with a detailed explanation of the many potential future applications. It provides an informed overview and fundamentals properties related to the 2D Transition metal dichalcogenide materials and their heterostructures. The book helps researchers to understand the progress of this field and points the way to future research in this area. Explores synthesis techniques of newly evolved 2D materials and their heterostructures with controlled properties Offers detailed analysis of the fundamental properties (via various experimental process and simulations techniques) of 2D heterostructures materials Discusses the applications of 2D heterostructured materials in various high-performance devices
Book Synopsis Building Fabrication-structure-application Datacubes of 2D Heterostructures by : Jimi Wang
Download or read book Building Fabrication-structure-application Datacubes of 2D Heterostructures written by Jimi Wang and published by . This book was released on 2020 with total page 52 pages. Available in PDF, EPUB and Kindle. Book excerpt: Researches on graphene and other two-dimensional (2D) layered materials remain exponential growth, driven by the fundamental interests and potential applications. Isolated atomic layers are intrinsically the building blocks that can be reassembled into vertically stacked heterostructures. Those so-called van der Waals heterostructures exhibit intriguing, unique properties that cannot be found in their single-layer counterparts. Recent deterministic placement methods have further opened up new possibilities to fabricate even more complex heterostructures with high performance. Here, this report provides insights into the recent progress of 2D heterostructures with an emphasis on their fabrication-structure-performance datacubes. First, we introduce a detailed description of state-of-the-art deterministic assembly and fabrication methods. We then compare different approaches, summarize their advantages and limitations, alongside the recommendations on choosing suitable techniques. Next, we will discuss the supreme electrical properties of heterostructures and the electron transfer mechanisms that make them outstanding. Then, we present some typical examples of state-of-the-art high-performance electronic applications. Finally, the perspectives and challenges will be addressed for future developments of 2D heterostructures
Book Synopsis Formation and Optical Properties of Mixed Multi-layered Heterostructures Based on All Two-dimensional Materials by : Yuewen Sheng
Download or read book Formation and Optical Properties of Mixed Multi-layered Heterostructures Based on All Two-dimensional Materials written by Yuewen Sheng and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Two-dimensional Semiconductor and Heterostructure for Novel Electronics and Optoelectronics by : JIAN GUO
Download or read book Two-dimensional Semiconductor and Heterostructure for Novel Electronics and Optoelectronics written by JIAN GUO and published by . This book was released on 2019 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt: The success of carbon nanotubes and graphene drives people to continuously search for novel low dimensional materials. Among the various discovered two-dimensional (2D) materials, 2D semiconductors (2DSCs) has been most extensively studied due to their unique electronic, optoelectronic, and mechanical properties. In terms of fundamental semiconducting performance, the ultra-thin body of 2DSCs enable strong electrostatic gate control, which is favored for high output current and ultra-low leakage current for field effect transistors. Meanwhile, the atomic thin film of 2DSCs is free of dangling bonds due to its layered structure, which contributes to low interfacial density of state and sharp turn on of density of states at the band edges. Those electronic properties are specially desired for short channel field effect transistor and tunneling transistor. Besides, the layer dependent band structure offers tremendous options for opto-excitation detection and heterostructures. However, the research of 2DSCs is limited on transition metal dichalcogenides (TMDCs) such as MoS2 and WSe2. Experimental studies of 2DSCs on other group compounds has little been reported. Besides, detailed studies of charge transport in 2DSCs transistor in both lateral and vertical direction requires further understanding; studies on metal/semiconductor contact and interface engineering in 2DSCs heterostructure potentially enable fascinating electronic functions. In this thesis, I will present my effort on uncovering a new group of 2DSCs, charge transport in 2DSCs transistor and their heterostructure with either other 2DSCs or metals. I will include the work from two of my first author publication. I will first present my research studies on characterizing a new group of 2DSCs from IV-V group compound, 2D GeAs for the first time. By examining the semiconducting properties of few-layer GeAs transistors, we achieve high ON-OFF ratio of 105 and maximum hole field-effect mobility of 99 cm2 V-1s-1at room temperature. Due to highly anisotropic crystal structure, highly angle dependent optical and electronic transport is also observed. To reveal the intrinsic carrier transport, we carried out systematic studies on Schottky barrier and contact resistance. The intrinsic mobility proves charge impurity scattering limited transport of GeAs transistor. At last, we demonstrate mid-infrared photodetector by utilizing the band gap of GeAs crystal. Then I will show our investigation of charge transport in multilayer MoS2 transistor with optimized van der Waals contact. For the first time we demonstrate a vertical built-in potential in 2DSCs that induces negative transconductance (NTC) behavior. By varying measurement temperature, body thickness and terminal numbers, we reveal that the NTC originates from the vertical barrier due to distinct doping type and carrier distribution. We further demonstrate a frequency doublers and phase shift keying circuits based on single transistor by utilizing the NTC phenomena. Furthermore, I will present a study on tunneling transistor based on 2DSC SnSe/GeAs heterostructure. By stacking two flexible n-type and p-type semiconductor, we acquire a hetero-pn junction. The cryo-temperature study of the heterostructure proves a type III band alignment and Esaki type diode, which indicates intrinsic tunneling current at low bias. The subthreshold swing and gate coupling efficiency has also been discussed. For the final part, we will discuss about a novel approach to enable memristive switching behavior on metal and 2DSCs interface. With alignment transfer technique, we can integrate active metal with fragile 2DSC without introducing any destruction on 2DSC. Due to gentle interdiffusion of active metal and native oxide on 2DSC surface, a resistive switching layer forms and enable switching with ON/OFF ratio up to three orders. Resistive random-access memory and synaptic modulation has been realized with our metal/oxide/2DSC memristor. Moreover, we examine the working principle of our memristor and propose the formation and dissolution of metal oxide as the working mechanism. These findings and engineer could provide exciting opportunities for 2DSCs for novel electronics and optoelectronics.
Book Synopsis Research and Engineering Towards the ITFET by : Christopher Michael Corbet
Download or read book Research and Engineering Towards the ITFET written by Christopher Michael Corbet and published by . This book was released on 2016 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt: As semiconductor device sizes continue to scale downwards, performance degradation associated with quantum mechanical effects become a greater problem. With this, continuing the path along Moore’s Law has become more difficult and paradigm shifting technologies have begun to gain traction in device research communities. One such device is the interlayer tunneling field effect transistor (ITFET) which harnesses quantum mechanical tunneling between two channel materials separated by a thin dielectric. These devices are created from two dimensional Van der Waals crystals stacked into layered heterostructures using advanced semiconductor manufacturing techniques. The pages hereafter represent the research and engineering towards an ITFET focusing on graphene, graphene dielectrics, and Rhenium based transition metal dichalcogenides (TMDs). We begin with a zeroth order investigation of the system by creating backgated devices of two partially overlapped graphene crystals and extracting the interlayer contact resistance. We show that the interlayer contact resistance is small, localized to tunneling ‘hot-spots,’ and that overall device performance is dependent on the characteristics of both graphene layers. To continue we investigate a similar device but with a dielectric deposited between the two via atomic layer deposition (ALD) and physical vapor deposition (PVD). Innovative fabrication techniques were created and allowed for the fabrication of dozens of devices simultaneously. Moving forward, we show that the seed layer in the ALD / PVD process is incompatible with ITFET device physics. The TiO2 seed layer in this process shows Fowler-Nordheim tunneling, Poole-Frenkel tunneling, and thermionic emission through the tunnel barrier at all thicknesses, electric fields, and temperatures. To conclude we investigate the Rhenium based TMDs, ReS2 and ReSe2, as a channel material for an ITFET by analyzing their performance metrics as field effect transistors (FETs). Topgated ReS2 devices were created and showed current saturation, voltage gain, and performance metrics on par with many of the more widely researched TMDs. Backgated ReSe2 devices showed current saturation, low contact resistances, ambipolar conduction, and similar performance capabilities to the ReS2 devices. Both materials may prove an interesting channel material for optoelectronic and novel logic devices.
Book Synopsis Atomistic Simulations of 2D Materials and Van Der Waal’s Heterostructures for Beyond-Si-CMOS Devices by : Amithraj Valsaraj
Download or read book Atomistic Simulations of 2D Materials and Van Der Waal’s Heterostructures for Beyond-Si-CMOS Devices written by Amithraj Valsaraj and published by . This book was released on 2017 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt: The unique electrical and optical properties of two-dimensional (2D) materials has spurred intense research interest towards development of nanoelectronic devices utilizing these novel materials. The atomically thin form of 2D materials translates to excellent electrostatic gate control even at nanoscale channel length dimensions, near-ideal two-dimensional carrier behavior, and perhaps conventional and novel devices applications. Monolayer transition metal dichalcogenides (TMDs) are novel, gapped 2D materials. Toward device applications, I consider MoS2 layers on dielectrics, in particular in this work, the effect of vacancies on the electronic structure. In density-functional-theory (DFT) simulations, the effects of near-interface oxygen vacancies in the oxide slab, and Mo or S vacancies in the MoS2 layer are considered. Band structures and atom-projected densities of states for each system and with differing oxide terminations were calculated, as well as those for the defect-free MoS2-dielectrics system and for isolated dielectric layers for reference. Among the results, I find that with O-vacancies, both the HfO2-MoS2 and the Al2O3-MoS2 systems appear metallic due to doping of the oxide slab followed by electron transfer into the MoS2, in manner analogous to modulation doping. The n-type doping of monolayer MoS2 by high-k oxides with O-vacancies is confirmed through collaborative experimental work in which back-gated monolayer MoS2 FETs encapsulated by oxygen deficient high-k oxides have been characterized. Van der Waal’s heterostructures allow for novel devices such as two-dimensional-to-two-dimensional tunnel devices, exemplified by interlayer tunnel FETs. These devices employ channel/tunnel-barrier/channel geometries. However, during layer-by-layer exfoliation of these multi-layer materials, rotational misalignment is the norm and may substantially affect device characteristics. In this work, by using density functional theory methods, I consider a reduction in tunneling due to weakened coupling across the rotationally misaligned interface between the channel layers and the tunnel barrier. As a prototypical system, I simulate the effects of rotational misalignment of the tunnel barrier layer between aligned channel layers in a graphene/hBN/graphene system. Rotational misalignment between the channel layers and the tunnel barrier in this van der Waal’s heterostructure can significantly reduce coupling between the channels by reducing, specifically, coupling across the interface between the channels and the tunnel barrier. This weakened coupling in graphene/hBN/graphene with hBN misalignment may be relevant to all such van der Waal’s heterostructures. TMDs are viable alternatives to graphene and hBN as channel and tunnel barrier layers, respectively, for improved performance in interlayer tunnel FET device structures. In particular, I used DFT simulations to study the bilayer-graphene/WSe2/bilayer-graphene heterostructure as well as single and multilayer ReS2-layer systems. Significant roadblocks to the widespread use of TMDs for nanoelectronic devices are the large contact resistance and absence of reliable doping techniques. Hence, I studied substitutional doping of, and evaluated various metal contacts to MoS2 by computing the density of states for the systems. Metal contacts that pin the Fermi level within the desired band are optimal for device applications. My simulation results suggest that monolayer (ML) MoS2 can be doped n-type or p-type by substituting for an S atom in the supercell with a group-17 Cl atom or a group-15 P atom, respectively. My simulations also suggest that Sc and Ti would serve as excellent contacts to n-type ML MoS2 due to the strong bonding and large number of states near the Fermi level. But the theoretical expectations are tempered by the material characteristics, i.e., the extremely reactive nature of Sc and the oxidation prone nature of Ti atoms. I also studied commonly used Ag and Au metal contacts to ML MoS2, which exhibited medium strength bonding to MoS2 and an apparent pinning of the Fermi level nearer to the nominal MoS2 conduction band edge
Book Synopsis Collective Quantum States in Twist Controlled Graphene Heterostructures by : Gregory William Burg
Download or read book Collective Quantum States in Twist Controlled Graphene Heterostructures written by Gregory William Burg and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, the twist angle between vertically stacked, two-dimensional van der Waals materials has come to the forefront as a key parameter for modifying the characteristics of van der Waals heterostructures and tuning the strength of electron-electron interactions. This dissertation discusses three heterostructures in which the twist angles between layers are controlled to enable interactions and probe collective states. The first heterostructure is rotationally aligned double bilayer graphene separated by WSe2, which exhibits energy and momentum conserving tunneling that is characterized by large peaks in the interlayer current when the bands of the graphene bilayers energetically align as a function of interlayer voltage, followed by negative differential resistance. Simulations of the tunneling current, which closely match the experimental data, and in-plane magnetotunneling measurements confirm that tunneling electrons conserve energy and momentum at all interlayer and gate biases. At the condition of equal and opposite densities in the graphene bilayers, however, the data show a large tunneling conductance that is not captured by calculations. The tunneling conductance exhibits a strong temperature dependence, much greater than expected for single particle tunneling. In addition, the conductance is suppressed at high and low layer densities, and with the application of an in-plane magnetic field, which suggests the tunneling enhancement originates from the condensation of spatially separated electron-hole pairs. The second heterostructure consists of two bilayer graphene stacked and twisted to a small angle near 1°. At this angle, non-dispersive bands appear in the low energy band structure, which support strong electron-electron interactions. Correlated insulators are observed at 1/2 filling of the flat conduction band at finite transverse electric fields, when the band is maximally isolated in energy from neighboring bands. Furthermore, in an in-plane magnetic field, additional correlated insulators appear at 1/4 and 3/4 filling, suggesting an interaction induced lifting of spin and valley degeneracy. Finally, alternating twist quadrilayer graphene is discussed, which consists of four graphene monolayers stacked and twisted with equal but alternating twist angles between layers. Two twist angles are considered that are slightly removed from the optimal flat band angle. At the larger angle, correlated insulators appear at half filling of the flat bands with no signatures of superconductivity. At the smaller angle, the correlated insulators weaken, and signs of superconductivity appear near half filling of the bands. The results suggest an asymmetry in the angle dependence of the two different correlated states
Book Synopsis Electronic and Optoelectronic Properties of Two-dimensional Heterostructures for Next-generation Device Technologies by : Thompson Jesse Eric
Download or read book Electronic and Optoelectronic Properties of Two-dimensional Heterostructures for Next-generation Device Technologies written by Thompson Jesse Eric and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since monolayer graphene was isolated in 2004, there has been significant interest in integrating layered materials into innovative device designs and hybrid materials to help solve pressing technological challenges. This is partially because they can typically be thinned to a two-dimensional (2D) form without suffering from roughness-induced scattering and can exhibit thickness-dependent variations in properties such as their energy band gap. This dissertation reports on investigations of electronic and optoelectronic device physics in 2D material heterostructures. The investigation of electronic device physics focuses on the interface between 2D molybdenum disulfide (MoS2) and gold (Au), which behaves as a resistive switching element (RSE). RSEs are microelectronic switches whose resistances depend on the history of electrical stimuli they have experienced. Prototype computer memory cells utilizing RSEs have demonstrated non-volatile switching behavior and high data retention times, likely enabling more environmentally-conscious computing. The ultimate degree of lateral scaling that MoS2-based RSEs can attain is currently unknown, but of great importance for determining their role in beyond-silicon computing applications. This work demonstrates, using the metallic tip of a scanning tunneling microscope as an electrode in a model MoS2-based RSE, that switching events can be recorded even in device areas on the order of tens of nanometers across without the use of lithographic techniques. The investigation of optoelectronic device physics focuses on utilizing hexagonal boron nitride (hBN), an electrical insulator with an ~6.0 eV band gap, to fabricate ultraviolet photodetectors. The main advantage that hBNbased detectors have over Si-based detectors is that they are inherently insensitive to visible and infrared light without needing bulky or expensive optical band pass filters, thus eliminating signal contamination from ambient sources. This work describes the fabrication and characterization of several detectors featuring vertical designs, allowing for greater degrees of both vertical and lateral scaling.
Book Synopsis A Planar Quantum Transistor Based on 2D-2D Tunneling in Double Quantum Well Heterostructures by :
Download or read book A Planar Quantum Transistor Based on 2D-2D Tunneling in Double Quantum Well Heterostructures written by and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: We report on our work on the double electron layer tunneling transistor (DELTT), based on the gate-control of two-dimensional -- two-dimensional (2D-2D) tunneling in a double quantum well heterostructure. While previous quantum transistors have typically required tiny laterally-defined features, by contrast the DELTT is entirely planar and can be reliably fabricated in large numbers. We use a novel epoxy-bond-and-stop-etch (EBASE) flip-chip process, whereby submicron gating on opposite sides of semiconductor epitaxial layers as thin as 0.24 microns can be achieved. Because both electron layers in the DELTT are 2D, the resonant tunneling features are unusually sharp, and can be easily modulated with one or more surface gates. We demonstrate DELTTs with peak-to-valley ratios in the source-drain I-V curve of order 20:1 below 1 K. Both the height and position of the resonant current peak can be controlled by gate voltage over a wide range. DELTTs with larger subband energy offsets ((approximately) 21 meV) exhibit characteristics that are nearly as good at 77 K, in good agreement with our theoretical calculations. Using these devices, we also demonstrate bistable memories operating at 77 K. Finally, we briefly discuss the prospects for room temperature operation, increases in gain, and high-speed.
Book Synopsis Physics, Chemistry and Application of Nanostructures by : Viktor Evgen?evich Borisenko
Download or read book Physics, Chemistry and Application of Nanostructures written by Viktor Evgen?evich Borisenko and published by World Scientific. This book was released on 2013 with total page 667 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents invited reviews and original short notes of recent results obtained in studies concerning the fabrication and application of nanostructures, which hold great promise for the next generation of electronic, optoelectronic and energy conversion devices. Covering exciting and relatively new topics such as fast-progressing nanoelectronics and optoelectronics, molecular electronics and spintronics, nanophotonics, nanosensorics and nanoenergetics as well as nanotechnology and quantum processing of information, this book gives readers a more complete understanding of the practical uses of nanotechnology and nanostructures.
Book Synopsis Physics, Chemistry And Applications Of Nanostructures - Proceedings Of The International Conference Nanomeeting – 2013 by : Victor E Borisenko
Download or read book Physics, Chemistry And Applications Of Nanostructures - Proceedings Of The International Conference Nanomeeting – 2013 written by Victor E Borisenko and published by World Scientific. This book was released on 2013-05-06 with total page 667 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents invited reviews and original short notes of recent results obtained in studies concerning the fabrication and application of nanostructures, which hold great promise for the next generation of electronic, optoelectronic and energy conversion devices.Covering exciting and relatively new topics such as fast-progressing nanoelectronics and optoelectronics, molecular electronics and spintronics, nanophotonics, nanosensorics and nanoenergetics as well as nanotechnology and quantum processing of information, this book gives readers a more complete understanding of the practical uses of nanotechnology and nanostructures.
Book Synopsis Smart Nanosystems for Biomedicine, Optoelectronics and Catalysis by : Tatyana Shabatina
Download or read book Smart Nanosystems for Biomedicine, Optoelectronics and Catalysis written by Tatyana Shabatina and published by BoD – Books on Demand. This book was released on 2020-11-26 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nowadays nanoscience and nanotechnologies provide us with many excellent examples of the unique solutions for the different technical problems and demands of human society. Smart stimuli-responsive nanosystems and nanomaterials are used in many fields such as medicine, biomedical, biotechnology, agriculture, environmental pollution control, cosmetics, optics, health, food, energy, textiles, automotive, communication technologies, agriculture, and electronics. The book “Smart Nanosystems for Biomedicine, Optoelectronics and Catalysis” describes the modern trends in nanoscience and nanotechnology for creation of smart hybrid nanosystems combining the inorganic nano-objects with organic, biological, and biocompatible materials, which create multifunctional and remotely controlled platforms for diverse technical and biomedical uses. The material includes several review and original research articles devoted to the problems of directed chemical and biological synthesis of such nanosystems, thorough analysis of their physical and chemical properties and prospects of their possible applications. We hope that the presented book will be useful for different nanoscience research groups and PhD and graduate students, to introduce them to the world of hybrid metal-organic and metal-biological nano-objects, and smart self-organizing nanosystems and open new ways of their possible use in different scientific and practical areas.
