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Laterally Varying Doping Profile
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Book Synopsis Emerging Technologies for In Situ Processing by : D.J. Ehrlich
Download or read book Emerging Technologies for In Situ Processing written by D.J. Ehrlich and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: Proceedings of the NATO Advanced Research Workshop, Cargèse, France, May 4-8, 1987
Book Synopsis Analysis and Design of MOSFETs by : Juin Jei Liou
Download or read book Analysis and Design of MOSFETs written by Juin Jei Liou and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 356 pages. Available in PDF, EPUB and Kindle. Book excerpt: Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.
Download or read book Semiconductor Silicon written by and published by . This book was released on 1986 with total page 1144 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Physical Concepts and Materials for Novel Optoelectronic Device Applications II by : Fabio Beltram
Download or read book Physical Concepts and Materials for Novel Optoelectronic Device Applications II written by Fabio Beltram and published by . This book was released on 1993 with total page 840 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fundamentals of Power Semiconductor Devices by : B. Jayant Baliga
Download or read book Fundamentals of Power Semiconductor Devices written by B. Jayant Baliga and published by Springer Science & Business Media. This book was released on 2010-04-02 with total page 1085 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.
Book Synopsis Advanced Short-time Thermal Processing for Si-based CMOS Devices by : Fred Roozeboom
Download or read book Advanced Short-time Thermal Processing for Si-based CMOS Devices written by Fred Roozeboom and published by The Electrochemical Society. This book was released on 2003 with total page 488 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Proceedings of The...Symposium on Electron, Ion, and Photon Beam Technology by :
Download or read book Proceedings of The...Symposium on Electron, Ion, and Photon Beam Technology written by and published by . This book was released on 1975 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Advances in Electrical Engineering and Computational Science by : Len Gelman
Download or read book Advances in Electrical Engineering and Computational Science written by Len Gelman and published by Springer Science & Business Media. This book was released on 2009-04-21 with total page 728 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Electrical Engineering and Computational Science contains sixty-one revised and extended research articles written by prominent researchers participating in the conference. Topics covered include Control Engineering, Network Management, Wireless Networks, Biotechnology, Signal Processing, Computational Intelligence, Computational Statistics, Internet Computing, High Performance Computing, and industrial applications. Advances in Electrical Engineering and Computational Science will offer the state of art of tremendous advances in electrical engineering and computational science and also serve as an excellent reference work for researchers and graduate students working with/on electrical engineering and computational science.
Book Synopsis High Voltage Devices and Circuits in Standard CMOS Technologies by : Hussein Ballan
Download or read book High Voltage Devices and Circuits in Standard CMOS Technologies written by Hussein Ballan and published by Springer Science & Business Media. This book was released on 2013-03-14 with total page 294 pages. Available in PDF, EPUB and Kindle. Book excerpt: Standard voltages used in today's ICs may vary from about 1.3V to more than 100V, depending on the technology and the application. High voltage is therefore a relative notion. High Voltage Devices and Circuits in Standard CMOS Technologies is mainly focused on standard CMOS technologies, where high voltage (HV) is defined as any voltage higher than the nominal (low) voltage, i.e. 5V, 3.3V, or even lower. In this standard CMOS environment, IC designers are more and more frequently confronted with HV problems, particularly at the I/O level of the circuit. In the first group of applications, a large range of industrial or consumer circuits either require HV driving capabilities, or are supposed to work in a high-voltage environment. This includes ultrasonic drivers, flat panel displays, robotics, automotive, etc. On the other hand, in the emerging field of integrated microsystems, MEMS actuators mainly make use of electrostatic forces involving voltages in the typical range of 30 to 60V. Last but not least, with the advent of deep sub-micron and/or low-power technologies, the operating voltage tends towards levels ranging from 1V to 2.5V, while the interface needs to be compatible with higher voltages, such as 5V. For all these categories of applications, it is usually preferable to perform most of the signal processing at low voltage, while the resulting output rises to a higher voltage level. Solving this problem requires some special actions at three levels: technology, circuit design and layout. High Voltage Devices and Circuits in Standard CMOS Technologies addresses these topics in a clear and organized way. The theoretical background is supported by practical information and design examples. It is an invaluable reference for researchers and professionals in both the design and device communities.
Book Synopsis Outlook and Challenges of Nano Devices, Sensors, and MEMS by : Ting Li
Download or read book Outlook and Challenges of Nano Devices, Sensors, and MEMS written by Ting Li and published by Springer. This book was released on 2017-02-22 with total page 522 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides readers with an overview of the design, fabrication, simulation, and reliability of nanoscale semiconductor devices, MEMS, and sensors, as they serve for realizing the next-generation internet of things. The authors focus on how the nanoscale structures interact with the electrical and/or optical performance, how to find optimal solutions to achieve the best outcome, how these apparatus can be designed via models and simulations, how to improve reliability, and what are the possible challenges and roadblocks moving forward.
Book Synopsis Compound Semiconductors 1996, Proceedings of the Twenty-Third INT Symposium on Compound Semiconductors held in St Petersburg, Russia, 23-27 September 1996 by : M.S. Shur
Download or read book Compound Semiconductors 1996, Proceedings of the Twenty-Third INT Symposium on Compound Semiconductors held in St Petersburg, Russia, 23-27 September 1996 written by M.S. Shur and published by CRC Press. This book was released on 2020-10-28 with total page 1087 pages. Available in PDF, EPUB and Kindle. Book excerpt: Providing a comprehensive overview of developments to both the academic and industrial communities, Compound Semiconductors 1996 covers all types of compound semiconducting materials and devices. The book includes results on blue and green lasers, heterostructure devices, nanoelectronics, and novel wide band gap semiconductors. With invited review papers and research results in current topics of interest, this volume is part of a well-known series of conferences for the dissemination of research results in the field.
Book Synopsis Advanced Optoelectronic Devices by : Daniela Dragoman
Download or read book Advanced Optoelectronic Devices written by Daniela Dragoman and published by Springer Science & Business Media. This book was released on 2013-03-14 with total page 433 pages. Available in PDF, EPUB and Kindle. Book excerpt: Optoelectronics will undoubtedly playamajor role in the applied sciences of the next century. This is due to the fact that optoelectronics holds the key to future communication developments which require high data transmission rates and of a extremely large bandwidths. For example, an optical fiber having a diameter few micrometers has a bandwidth of 50 THz, where an impressive number of channels having high bit data rates can be simultaneously propagated. At present, optical data streams of 100 Gb/s are being tested for use in the near future. Optoelectronics has advanced considerably in the last few years. This is due to the fact that major developments in the area of semiconductors, such as hetero structures based on III-V compounds or mesoscopic structures at the nanometer scale such as quantum weHs, quantum wires and quantum dots, have found robust applications in the generation, modulation, detection and processing of light. Major developments in glass techniques have also dramaticaHy improved the performance of optoelectronic devices based on optical fibers. The optical fiber doped with rare-earth materials has aHowed the amplification of propagating light, compensating its own los ses and even generating coherent light in fiber lasers. The UV irradiation of fibers has been used to inscribe gratings of hundreds of nanometer size inside the fiber, generating a large class of devices used for modulation, wavelength selection and other applications.
Book Synopsis Nano and Giga Challenges in Microelectronics by : J. Greer
Download or read book Nano and Giga Challenges in Microelectronics written by J. Greer and published by Elsevier. This book was released on 2003-10-24 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book is designed as an introduction for engineers and researchers wishing to obtain a fundamental knowledge and a snapshot in time of the cutting edge in technology research. As a natural consequence, Nano and Giga Challenges is also an essential reference for the "gurus" wishing to keep abreast of the latest directions and challenges in microelectronic technology development and future trends. The combination of viewpoints presented within the book can help to foster further research and cross-disciplinary interaction needed to surmount the barriers facing future generations of technology design.Key Features:• Quickly becoming the hottest topic of the new millennium (2.4 billion dollars funding in US alone• Current status and future trends of micro and nanoelectronics research• Written by leading experts in the corresponding research areas• Excellent tutorial for graduate students and reference for "gurus"
Book Synopsis Thirty-fourth International Symposium for Testing and Failure Analysis by : ASM International
Download or read book Thirty-fourth International Symposium for Testing and Failure Analysis written by ASM International and published by ASM International. This book was released on 2008-01-01 with total page 551 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Properties of III-V Quantum Wells and Superlattices by : P. K. Bhattacharya
Download or read book Properties of III-V Quantum Wells and Superlattices written by P. K. Bhattacharya and published by IET. This book was released on 1996 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt: A finely-structured, state-of-the-art review on controlled building of atomic-scale mutilayers, where nanometric structures based on III-V semiconductors have attracted particular attention.
Book Synopsis Advanced Power MOSFET Concepts by : B. Jayant Baliga
Download or read book Advanced Power MOSFET Concepts written by B. Jayant Baliga and published by Springer Science & Business Media. This book was released on 2010-06-26 with total page 573 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the last decade many new concepts have been proposed for improving the performance of power MOSFETs. The results of this research are dispersed in the technical literature among journal articles and abstracts of conferences. Consequently, the information is not readily available to researchers and practicing engineers in the power device community. There is no cohesive treatment of the ideas to provide an assessment of the relative merits of the ideas. "Advanced Power MOSFET Concepts" provides an in-depth treatment of the physics of operation of advanced power MOSFETs. Analytical models for explaining the operation of all the advanced power MOSFETs will be developed. The results of numerical simulations will be provided to give additional insight into the device physics and validate the analytical models. The results of two-dimensional simulations will be provided to corroborate the analytical models and give greater insight into the device operation.
Book Synopsis Delta-doping of Semiconductors by : E. F. Schubert
Download or read book Delta-doping of Semiconductors written by E. F. Schubert and published by Cambridge University Press. This book was released on 1996-03-14 with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is the first to give a comprehensive review of the theory, fabrication, characterisation, and device applications of abrupt, shallow, and narrow doping profiles in semiconductors. Such doping profiles are a key element in the development of modern semiconductor technology. After an introductory chapter setting out the basic theoretical and experimental concepts involved, the fabrication of abrupt and narrow doping profiles by several different techniques, including epitaxial growth, is discussed. The techniques for characterising doping distributions are then presented, followed by several chapters devoted to the inherent physical properties of narrow doping profiles. The latter part of the book deals with specific devices. The book will be of great interest to graduate students, researchers and engineers in the fields of semiconductor physics and microelectronic engineering.
