Lateral Epitaxial Overgrowth Of Gan On Si111

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Lateral Epitaxial Overgrowth of GaN on Si(111).

Author :
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (455 download)

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Download or read book Lateral Epitaxial Overgrowth of GaN on Si(111). written by and published by . This book was released on 1998 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The lateral epitaxial overgrowth of GaN on Si(111) substrates was achieved using an extension of our standard LEO process on GaN/Al2O3 substrates, and the reduction of the dislocation density was demonstrated by transmission electron microscopy (TEM) and atomic force microscopy (AFM). The growth on the Si(111) substrate was initiated with the deposition of a thin AlN buffer layer to avoid the formation of potentially detrimental silicon nitride at the interface. The wafers were then patterned with a SiO2 layer in which 5 micron wide opening separated by 35 microns were etched using buffered HF. After reloading the samples in the MOCVD chamber, the LEO growth was performed using our standard parameters. There are a few unresolved issues concerning the effect of the AlN buffer thickness and its chemical compatibility with the SiO2 mask layer, but after a basic optimization we were able to obtain 5 microns of lateral overgrowth with smooth sidewalls in a reproducible manner. We are currently investigating the use of mask materials other than SiO2 to achieve LEO on Si(111) over a wider range of process parameters.

Molecular Beam Epitaxy

Author : Mohamed Henini
Publisher : Newnes
ISBN 13 : 0123918596
Total Pages : 745 pages
Book Rating : 4.1/5 (239 download)

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Book Synopsis Molecular Beam Epitaxy by : Mohamed Henini

Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Newnes. This book was released on 2012-12-31 with total page 745 pages. Available in PDF, EPUB and Kindle. Book excerpt: This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in epitaxial growth with close discussion and a ‘how to’ on processing molecular or atomic beams that occur on a surface of a heated crystalline substrate in a vacuum.MBE has expanded in importance over the past thirty years (in terms of unique authors, papers and conferences) from a pure research domain into commercial applications (prototype device structures and more at the advanced research stage). MBE is important because it enables new device phenomena and facilitates the production of multiple layered structures with extremely fine dimensional and compositional control. The techniques can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. This book covers the advances made by MBE both in research and mass production of electronic and optoelectronic devices. It includes new semiconductor materials, new device structures which are commercially available, and many more which are at the advanced research stage. Condenses fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Coverage of MBE as mass production epitaxial technology enhances processing efficiency and throughput for semiconductor industry and nanostructured semiconductor materials research community

Compound Semiconductors 1998

Author : H Sakaki
Publisher : CRC Press
ISBN 13 : 1000157148
Total Pages : 931 pages
Book Rating : 4.0/5 (1 download)

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Book Synopsis Compound Semiconductors 1998 by : H Sakaki

Download or read book Compound Semiconductors 1998 written by H Sakaki and published by CRC Press. This book was released on 2021-02-01 with total page 931 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compound Semiconductors 1998 explores research and development in key semiconductor materials and III-V compounds such as gallium arsenide, indium phosphide, gallium nitride, silicon germanium, and silicon carbide. It critically assesses progress in key technologies such as reliability assessment and reports on advances in the use of semiconductors in modern electronic and optoelectronic devices. Coverage in this volume reflects the increased interest and research funding in nitride-based materials; wide band-gap devices; mobile communications, including III-V-based transistors and photonic devices; crystal growth and characterization; and nanoscale phenomena, such as quantum wires, dots, and other low dimensional structures.

III-V Compound Semiconductors

Author : Tingkai Li
Publisher : CRC Press
ISBN 13 : 1439815232
Total Pages : 588 pages
Book Rating : 4.4/5 (398 download)

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Book Synopsis III-V Compound Semiconductors by : Tingkai Li

Download or read book III-V Compound Semiconductors written by Tingkai Li and published by CRC Press. This book was released on 2016-04-19 with total page 588 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more

Characterization of (Al, Ga, In)N Grown Using Lateral Epitaxial Overgrowth

Author : Umesh Mishra
Publisher :
ISBN 13 :
Total Pages : 12 pages
Book Rating : 4.:/5 (455 download)

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Book Synopsis Characterization of (Al, Ga, In)N Grown Using Lateral Epitaxial Overgrowth by : Umesh Mishra

Download or read book Characterization of (Al, Ga, In)N Grown Using Lateral Epitaxial Overgrowth written by Umesh Mishra and published by . This book was released on 1998 with total page 12 pages. Available in PDF, EPUB and Kindle. Book excerpt: We describe the effect of various growth parameters such as V/III ratio and temperature on the lateral epitaxial overgrowth of GaN by MOCVD. We also discuss the effect of the mask pattern geometry used as the "seed" template. Structural characterization (AFM, TEM) show that for suitable growth conditions the LEO GaN contains almost no threading dislocations (approx. 10 (exp 5)/sq cm). Based on these results we developed a 40 micrometers period LEO GaN template (containing essentially dislocation-free regions approx. 15 micrometers wide) that is suitable for the subsequent growth of device layer structures and device fabrication. Preliminary results showing the improved properties of AlGaN/GaN and InGaN/GaN heterostructures grown on these templates are then discussed.

Molecular Beam Epitaxial Growth of Gan on Si(111) Substrate

Author : Zhongjie Xu
Publisher :
ISBN 13 : 9781361245903
Total Pages : pages
Book Rating : 4.2/5 (459 download)

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Book Synopsis Molecular Beam Epitaxial Growth of Gan on Si(111) Substrate by : Zhongjie Xu

Download or read book Molecular Beam Epitaxial Growth of Gan on Si(111) Substrate written by Zhongjie Xu and published by . This book was released on 2017-01-26 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Springer Handbook of Crystal Growth

Author : Govindhan Dhanaraj
Publisher : Springer Science & Business Media
ISBN 13 : 3540747613
Total Pages : 1823 pages
Book Rating : 4.5/5 (47 download)

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Book Synopsis Springer Handbook of Crystal Growth by : Govindhan Dhanaraj

Download or read book Springer Handbook of Crystal Growth written by Govindhan Dhanaraj and published by Springer Science & Business Media. This book was released on 2010-10-20 with total page 1823 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the years, many successful attempts have been chapters in this part describe the well-known processes made to describe the art and science of crystal growth, such as Czochralski, Kyropoulos, Bridgman, and o- and many review articles, monographs, symposium v- ing zone, and focus speci cally on recent advances in umes, and handbooks have been published to present improving these methodologies such as application of comprehensive reviews of the advances made in this magnetic elds, orientation of the growth axis, intro- eld. These publications are testament to the grow- duction of a pedestal, and shaped growth. They also ing interest in both bulk and thin- lm crystals because cover a wide range of materials from silicon and III–V of their electronic, optical, mechanical, microstructural, compounds to oxides and uorides. and other properties, and their diverse scienti c and The third part, Part C of the book, focuses on - technological applications. Indeed, most modern ad- lution growth. The various aspects of hydrothermal vances in semiconductor and optical devices would growth are discussed in two chapters, while three other not have been possible without the development of chapters present an overview of the nonlinear and laser many elemental, binary, ternary, and other compound crystals, KTP and KDP. The knowledge on the effect of crystals of varying properties and large sizes. The gravity on solution growth is presented through a c- literature devoted to basic understanding of growth parison of growth on Earth versus in a microgravity mechanisms, defect formation, and growth processes environment.

Handbook of Luminescent Semiconductor Materials

Author : Leah Bergman
Publisher : CRC Press
ISBN 13 : 1439834806
Total Pages : 460 pages
Book Rating : 4.4/5 (398 download)

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Book Synopsis Handbook of Luminescent Semiconductor Materials by : Leah Bergman

Download or read book Handbook of Luminescent Semiconductor Materials written by Leah Bergman and published by CRC Press. This book was released on 2016-04-19 with total page 460 pages. Available in PDF, EPUB and Kindle. Book excerpt: Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to stud

III-Nitride Based Light Emitting Diodes and Applications

Author : Tae-Yeon Seong
Publisher : Springer
ISBN 13 : 9811037558
Total Pages : 498 pages
Book Rating : 4.8/5 (11 download)

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Book Synopsis III-Nitride Based Light Emitting Diodes and Applications by : Tae-Yeon Seong

Download or read book III-Nitride Based Light Emitting Diodes and Applications written by Tae-Yeon Seong and published by Springer. This book was released on 2017-05-18 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt: The revised edition of this important book presents updated and expanded coverage of light emitting diodes (LEDs) based on heteroepitaxial GaN on Si substrates, and includes new chapters on tunnel junction LEDs, green/yellow LEDs, and ultraviolet LEDs. Over the last two decades, significant progress has been made in the growth, doping and processing technologies of III-nitride based semiconductors, leading to considerable expectations for nitride semiconductors across a wide range of applications. LEDs are already used in traffic signals, signage lighting, and automotive applications, with the ultimate goal of the global replacement of traditional incandescent and fluorescent lamps, thus reducing energy consumption and cutting down on carbon-dioxide emission. However, some critical issues must be addressed to allow the further improvements required for the large-scale realization of solid-state lighting, and this book aims to provide the readers with details of some contemporary issues on which the performance of LEDs is seriously dependent. Most importantly, it describes why there must be a breakthrough in the growth of high-quality nitride semiconductor epitaxial layers with a low density of dislocations, in particular, in the growth of Al-rich and In-rich GaN-based semiconductors. The quality of materials is directly dependent on the substrates used, such as sapphire and Si, and the book discusses these as well as topics such as efficiency droop, growth in different orientations, polarization, and chip processing and packaging technologies. Offering an overview of the state of the art in III-Nitride LED science and technology, the book will be a core reference for researchers and engineers involved with the developments of solid state lighting, and required reading for students entering the field.

Gan-based Materials And Devices: Growth, Fabrication, Characterization And Performance

Author : Robert F Davis
Publisher : World Scientific
ISBN 13 : 9814482692
Total Pages : 295 pages
Book Rating : 4.8/5 (144 download)

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Book Synopsis Gan-based Materials And Devices: Growth, Fabrication, Characterization And Performance by : Robert F Davis

Download or read book Gan-based Materials And Devices: Growth, Fabrication, Characterization And Performance written by Robert F Davis and published by World Scientific. This book was released on 2004-05-07 with total page 295 pages. Available in PDF, EPUB and Kindle. Book excerpt: The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.

Comprehensive Semiconductor Science and Technology

Author :
Publisher : Newnes
ISBN 13 : 0080932282
Total Pages : 3572 pages
Book Rating : 4.0/5 (89 download)

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Book Synopsis Comprehensive Semiconductor Science and Technology by :

Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts

Gallium Nitride and Silicon Carbide Power Technologies 4

Author : K. Shenai
Publisher : The Electrochemical Society
ISBN 13 : 1607685442
Total Pages : 312 pages
Book Rating : 4.6/5 (76 download)

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Book Synopsis Gallium Nitride and Silicon Carbide Power Technologies 4 by : K. Shenai

Download or read book Gallium Nitride and Silicon Carbide Power Technologies 4 written by K. Shenai and published by The Electrochemical Society. This book was released on with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Nitride Semiconductor Light-Emitting Diodes (LEDs)

Author : Jian-Jang Huang
Publisher : Woodhead Publishing
ISBN 13 : 0081019432
Total Pages : 826 pages
Book Rating : 4.0/5 (81 download)

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Book Synopsis Nitride Semiconductor Light-Emitting Diodes (LEDs) by : Jian-Jang Huang

Download or read book Nitride Semiconductor Light-Emitting Diodes (LEDs) written by Jian-Jang Huang and published by Woodhead Publishing. This book was released on 2017-10-24 with total page 826 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies, and Applications, Second Edition reviews the fabrication, performance and applications of the technology, encompassing the state-of-the-art material and device development, along with considerations regarding nitride-based LED design. This updated edition is based on the latest research and advances, including two new chapters on LEDs for large displays and laser lighting. Chapters cover molecular beam epitaxy (MBE) growth of nitride semiconductors, modern metalorganic chemical vapor deposition (MOCVD) techniques, the growth of nitride-based materials, and gallium nitride (GaN)-on-sapphire and GaN-on-silicon technologies for LEDs. Nanostructured, non-polar and semi-polar nitride-based LEDs, as well as phosphor-coated nitride LEDs, are also discussed. The book also addresses the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots. Further chapters discuss the development of LED encapsulation technology and fundamental efficiency droop issues in gallium indium nitride (GaInN) LEDs. It is a technical resource for academics, physicists, materials scientists, electrical engineers, and those working in the lighting, consumer electronics, automotive, aviation, and communications sectors. Features new chapters on laser lighting, addressing the latest advances on this topic Reviews fabrication, performance, and applications of this technology that encompass the state-of-the-art material and device development Covers the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots Highlights applications of nitride LEDs, including liquid crystal display (LCD) backlighting, infra-red emitters, and automotive lighting Provides a comprehensive discussion of gallium nitride on both silicon and sapphire substrates

Light-Emitting Diodes

Author : Jinmin Li
Publisher : Springer
ISBN 13 : 3319992112
Total Pages : 601 pages
Book Rating : 4.3/5 (199 download)

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Book Synopsis Light-Emitting Diodes by : Jinmin Li

Download or read book Light-Emitting Diodes written by Jinmin Li and published by Springer. This book was released on 2019-01-07 with total page 601 pages. Available in PDF, EPUB and Kindle. Book excerpt: Comprehensive in scope, this book covers the latest progresses of theories, technologies and applications of LEDs based on III-V semiconductor materials, such as basic material physics, key device issues (homoepitaxy and heteroepitaxy of the materials on different substrates, quantum efficiency and novel structures, and more), packaging, and system integration. The authors describe the latest developments of LEDs with spectra coverage from ultra-violet (UV) to the entire visible light wavelength. The major aspects of LEDs, such as material growth, chip structure, packaging, and reliability are covered, as well as emerging and novel applications beyond the general and conventional lightings. This book, written by leading authorities in the field, is indispensable reading for researchers and students working with semiconductors, optoelectronics, and optics. Addresses novel LED applications such as LEDs for healthcare and wellbeing, horticulture, and animal breeding; Editor and chapter authors are global leading experts from the scientific and industry communities, and their latest research findings and achievements are included; Foreword by Hiroshi Amano, one of the 2014 winners of the Nobel Prize in Physics for his work on light-emitting diodes.

Heteroepitaxy of Semiconductors

Author : John E. Ayers
Publisher : CRC Press
ISBN 13 : 135183780X
Total Pages : 388 pages
Book Rating : 4.3/5 (518 download)

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Book Synopsis Heteroepitaxy of Semiconductors by : John E. Ayers

Download or read book Heteroepitaxy of Semiconductors written by John E. Ayers and published by CRC Press. This book was released on 2018-10-08 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt: Heteroepitaxy has evolved rapidly in recent years. With each new wave of material/substrate combinations, our understanding of how to control crystal growth becomes more refined. Most books on the subject focus on a specific material or material family, narrowly explaining the processes and techniques appropriate for each. Surveying the principles common to all types of semiconductor materials, Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization is the first comprehensive, fundamental introduction to the field. This book reflects our current understanding of nucleation, growth modes, relaxation of strained layers, and dislocation dynamics without emphasizing any particular material. Following an overview of the properties of semiconductors, the author introduces the important heteroepitaxial growth methods and provides a survey of semiconductor crystal surfaces, their structures, and nucleation. With this foundation, the book provides in-depth descriptions of mismatched heteroepitaxy and lattice strain relaxation, various characterization tools used to monitor and evaluate the growth process, and finally, defect engineering approaches. Numerous examples highlight the concepts while extensive micrographs, schematics of experimental setups, and graphs illustrate the discussion. Serving as a solid starting point for this rapidly evolving area, Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization makes the principles of heteroepitaxy easily accessible to anyone preparing to enter the field.

III-Nitrides Light Emitting Diodes: Technology and Applications

Author : Jinmin Li
Publisher : Springer Nature
ISBN 13 : 9811579490
Total Pages : 295 pages
Book Rating : 4.8/5 (115 download)

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Book Synopsis III-Nitrides Light Emitting Diodes: Technology and Applications by : Jinmin Li

Download or read book III-Nitrides Light Emitting Diodes: Technology and Applications written by Jinmin Li and published by Springer Nature. This book was released on 2020-08-31 with total page 295 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book provides an overview of III-nitride-material-based light-emitting diode (LED) technology, from the basic material physics to the latest advances in the field, such as homoepitaxy and heteroepitaxy of the materials on different substrates. It also includes the latest advances in the field, such as approaches to improve quantum efficiency and reliability as well as novel structured LEDs. It explores the concept of material growth, chip structure, packaging, reliability and application of LEDs. With spectra coverage from ultraviolet (UV) to entire visible light wavelength, the III-nitride-material-based LEDs have a broad application potential, and are not just limited to illumination. These novel applications, such as health & medical, visible light communications, fishery and horticulture, are also discussed in the book.

Handbook of GaN Semiconductor Materials and Devices

Author : Wengang (Wayne) Bi
Publisher : CRC Press
ISBN 13 : 1351648055
Total Pages : 775 pages
Book Rating : 4.3/5 (516 download)

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Book Synopsis Handbook of GaN Semiconductor Materials and Devices by : Wengang (Wayne) Bi

Download or read book Handbook of GaN Semiconductor Materials and Devices written by Wengang (Wayne) Bi and published by CRC Press. This book was released on 2017-10-20 with total page 775 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.